专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

KR20100127170A Sulfuric acid-based copper plating solution for semi-additive and method of manufacturing printed wiring board 审中-公开
标题翻译：用于半自动添加剂的基于硫酸的铜溶液和制造印刷线路板的方法
公开(公告)号：KR20100127170A
公开(公告)日：2010-12-03
申请号：KR20100012696
申请日：2010-02-11
申请人： MITSUI MINING & SMELTING CO
发明人： TANIGUCHI KAZUKO , NAKAJIMA DAISUKE , DOBASHI MAKOTO , YAGI TERUAKI , ISHIKAWA KOHEI
IPC分类号： C25D3/38 , C25D7/00 , H05K3/12
CPC分类号： C25D3/38 , H05K3/188
摘要： PURPOSE: A manufacturing method of sulfate system copper plating liquid for semi-additive and a print circuit board is provided to prevent the property change of a print circuit board due to the remaining metals by processing passivation treatment. CONSTITUTION: A sulfate system copper plating liquid for semi-additive is made from one of 3-mercapto-1-prophansulfon acid or bis(3-sulfopropyl) disulfide. A sprocket hole(2) is formed on both side of a insulation member(10) in a width direction. The sulfate system copper plating liquid for semi-additive includes 4 class ammonium salt polymer and chlorine. 4 class ammonium salt polymer has a ring structure. The copper density of the sulfate system copper plating liquid for semi-additive is 23~55g/L. The sulfate acid concentration of the sulfate system copper plating liquid for semi-additive is 50~250g/L. The concentration of 3-mercapto-1-prophansulfon acid or bis(3-sulfopropyl) disulfide is 8~12mg/L.
摘要翻译：目的：提供用于半添加剂和印刷电路板的硫酸盐体系电镀液的制造方法，以通过处理钝化处理来防止由于剩余的金属而导致的印刷电路板的性能变化。构成：用于半添加剂的硫酸盐系镀铜液由3-巯基-1-前磺酸或双（3-磺丙基）二硫化物之一制成。在绝缘构件（10）的宽度方向的两侧形成有链轮孔（2）。用于半添加剂的硫酸盐系镀铜液包括4类铵盐聚合物和氯。 4级铵盐聚合物具有环结构。用于半添加剂的硫酸盐系镀铜液的铜密度为23〜55g / L。用于半添加剂的硫酸盐系镀铜液的硫酸浓度为50〜250g / L。 3-巯基-1-前磺酸或双（3-磺丙基）二硫化物的浓度为8〜12mg / L。

2. 发明公开

KR20100088528A Nickel particle coated with nickel hydroxide and producing the same 审中-公开
标题翻译：含镍氢氧化镍的镍颗粒和生产它们
公开(公告)号：KR20100088528A
公开(公告)日：2010-08-09
申请号：KR20100002983
申请日：2010-01-13
申请人： MITSUI MINING & SMELTING CO
发明人： MUKUNO TAKASHI , KOHIRA TOSHIHIRO
IPC分类号： B22F1/02 , B22F9/18
CPC分类号： B22F9/18 , B22F1/02
摘要： PURPOSE: Hydroxide nickel coated nickel particles and a preparing method thereof are provided to prevent the increase of sintering temperature or electric resistance even when forming an electrode film by reducing and sintering hydroxide nickel coated nickel particles without removing a hydroxide nickel layer. CONSTITUTION: Hydroxide nickel coated nickel particles(10) are coated on the surface with hydroxide nickel. The hydroxide nickel is combined to be removable by an external force, such as a media mill. The average diameter of first particle is 5~500nm. A method for preparing the hydroxide nickel coated nickel particles(20) comprises the steps of interrupting the reduction of hydroxide nickel particles to form a plurality of micro nickel particles within the hydroxide nickel particles and removing the hydroxide nickel particles to obtain a plurality of hydroxide nickel particles having a hydroxide nickel layer on the surface.
摘要翻译：目的：提供氢氧化镍涂覆的镍颗粒及其制备方法，以防止即使在不除去氢氧化镍层的情况下还原和烧结氢氧化镍涂覆的镍颗粒来形成电极膜时也增加烧结温度或电阻。构成：用氢氧化镍将氢氧化镍镀镍的镍颗粒（10）涂覆在表面上。氢氧化镍被组合以通过外力来除去，例如介质磨。第一颗粒的平均直径为5〜500nm。制备氢氧化镍镀镍的镍颗粒（20）的方法包括以下步骤：中断氢氧化镍颗粒的还原以在氢氧化镍颗粒内形成多个微镍颗粒并除去氢氧化镍颗粒以获得多个氢氧化镍在表面具有氢氧化镍层的颗粒。

3. 发明公开

KR20200125634A 부열팽창 재료, 복합 재료 및, 부열팽창 재료의 제조 방법 审中-公开
公开(公告)号：KR20200125634A
公开(公告)日：2020-11-04
申请号：KR20207026723
申请日：2019-02-26
申请人： TOKYO INST TECH , MITSUI MINING & SMELTING CO
发明人： ISOBE TOSHIHIRO , HAYAKAWA YUKO , ADACHI YURI , UEHARA RYOSUKE
IPC分类号： C01B25/26 , C01B25/45
摘要： 본발명에따른부의열팽창률을갖는부열팽창재료는, Zr2-aMaSxP2O12+δ로나타나는것을특징으로한다. 단, M은, Ti, Ce, Sn, Mn, Hf, Ir, Pb, Pd, Cr로부터선택되는적어도 1종이고, a는 0≤a

4. 发明公开

KR20180041167A 프린트 배선판의 제조 방법 审中-公开
公开(公告)号：KR20180041167A
公开(公告)日：2018-04-23
申请号：KR20187007215
申请日：2016-07-15
申请人： MITSUI MINING & SMELTING CO
发明人： TAKANASHI AKITOSHI , IIDA HIROTO
IPC分类号： H05K3/46 , H05K3/00
CPC分类号： H05K3/46
摘要： 빌드업배선층의형성공정에있어서의캐리어와극박구리층의사이의계면으로의약액의침입을유의하게방지할수 있고, 또한코어리스지지체의분리공정에있어서의극박구리층의부분적인파열및 그에의해발생하는문제를유의하게억제하는것이가능한, 프린트배선판의제조방법이제공된다. 본발명의방법은, 캐리어의박리층측의면에있어서, 기복곡선요소의평균높이 Wc와피크카운트 Pc의곱인 Wc×Pc가 20 내지 50㎛인, 캐리어를구비한구리박을준비하는공정과, 캐리어또는극박구리층상에빌드업배선층을형성하여빌드업배선층을구비한적층체를제작하는공정과, 빌드업배선층을구비한적층체를박리층에서분리하여빌드업배선층을포함하는다층배선판을얻는공정과, 다층배선판을가공하여프린트배선판을얻는공정을포함한다.

5. 发明公开

KR20090130321A SPUTTERING TARGETS WITH ADJUSTED PROPORTION OF PINHOLES AND MANUFACTURING METHOD THEREOF 有权
标题翻译：具有调整比例的针刺的喷射目标及其制造方法
公开(公告)号：KR20090130321A
公开(公告)日：2009-12-22
申请号：KR20097024334
申请日：2009-02-20
申请人： MITSUI MINING & SMELTING CO
发明人： MATSUMAE KAZUO
IPC分类号： C23C14/34 , C22C1/04
CPC分类号： C23C14/3414 , C04B35/457 , C04B35/6263 , C04B35/64 , C04B2235/3286 , C04B2235/5409 , C04B2235/656 , C04B2235/6585 , C04B2235/775 , C23C14/086
摘要： Provided are sputtering targets that effectively prevent cracking of the sputtering targets themselves even when high input power is introduced, while reducing the arcing generated during sputtering. The sputtering targets of this invention are plate-shaped sputtering targets that are produced by a powder metallurgy method and are characterized by the fact that the proportion of said sputtering targets that is occupied by pinholes is higher near the lower surface than near the upper surface of said sputtering target.
摘要翻译：提供了即使在引入高输入功率的同时也有效地防止溅射靶自身的破裂的溅射靶，同时减少溅射期间产生的电弧。本发明的溅射靶是通过粉末冶金方法制造的板状溅射靶，其特征在于，在下表面附近由针孔占据的所述溅射靶的比例高于靠近上表面的比例说溅射目标。

6. 发明公开

KR20070080575A ITO SINTERED BODY AND ITO SPUTTERING TARGET 审中-公开
标题翻译： ITO烧结体和ITO溅射靶
公开(公告)号：KR20070080575A
公开(公告)日：2007-08-10
申请号：KR20070012229
申请日：2007-02-06
申请人： MITSUI MINING & SMELTING CO
发明人： TAKAHASHI SEIICHIRO , KIYOTO JUNICHI , HAYASHI HIROMITSU
IPC分类号： C23C14/34
摘要： An ITO sputtering target material and an ITO sputtering target by which a film of a low resistance is obtained although an oxygen partial pressure is changed to some degree during sputtering, and an ITO sintered body suitable for the ITO sputtering target material and the ITO sputtering target are provided. An ITO(Indium-Tin-Oxide) sintered body is characterized in that a mean value of maximum diameters of fine grains existing in a In2O3 parent phase that is a principal grain is less than 0.2 mum. An ITO(Indium-Tin-Oxide) sintered body is characterized in that a mean value of widths of fine grain free zones from grain boundaries of a In2O3 parent phase that is a principal grain is less than 0.3 mum. An ITO(Indium-Tin-Oxide) sintered body(10) is characterized in that a mean value of maximum diameters of fine grains(2) existing in a In2O3 parent phase(1) that is a principal grain is less than 0.2 mum, and a mean value of widths of fine grain free zones(5) from grain boundaries(3) of the In2O3 parent phase is less than 0.3 mum. The ITO sintered body is a sputtering target material. An ITO sputtering target comprises the ITO sintered body, and a backing plate.
摘要翻译： ITO溅射靶材料和ITO溅射靶，尽管在溅射期间氧分压发生一定程度的变化，但是通过该ITO溅射靶可以获得低电阻的膜，以及适用于ITO溅射靶材料和ITO溅射靶的ITO烧结体被提供。 ITO（铟锡氧化物）烧结体的特征在于，作为主晶粒的In2O3母相中存在的细晶粒的最大直径的平均值小于0.2μm。 ITO（Indium-Tin-Oxide）烧结体的特征在于，作为主晶粒的In 2 O 3亲本相的晶界的无细晶粒宽度的平均值小于0.3μm。 ITO（铟锡氧化物）烧结体（10）的特征在于，作为主晶粒的In2O3母相（1）中存在的细晶粒（2）的最大直径的平均值小于0.2μm，并且来自In2O3母相的晶界（3）的无细小颗粒区域（5）的宽度的平均值小于0.3μm。 ITO烧结体是溅射靶材料。 ITO溅射靶包括ITO烧结体和背板。

7. 发明公开

KR20200142121A 캐리어를 구비한 구리박, 그리고 배선층을 구비한 코어리스 지지체 및 프린트 배선판의 제조 방법 审中-公开
公开(公告)号：KR20200142121A
公开(公告)日：2020-12-21
申请号：KR20207035925
申请日：2017-02-21
申请人： MITSUI MINING & SMELTING CO
发明人： MATSUURA YOSHINORI
IPC分类号： C25D1/04 , C23C14/18 , C25D1/20 , C25D5/02 , C25D5/34 , H05K3/06 , H05K3/46
摘要： 포토레지스트현상공정에있어서현상액에대하여우수한내박리성을나타냄과함께, 캐리어의기계적박리강도의우수한안정성을가져오는것이가능한, 캐리어를구비한구리박이제공된다. 이캐리어를구비한구리박은, 캐리어와, 캐리어상에마련되고, 캐리어측의표면이 Ti, Cr, Mo, Mn, W 및 Ni로이루어지는군에서선택되는적어도 1종의금속을 1.0at% 이상함유하며, 또한캐리어와반대측의표면이 Cu를 30at% 이상함유하는중간층과, 중간층상에마련되는박리층과, 박리층상에마련되는극박구리층을구비한다.

8. 发明公开

KR20200136486A 고체 전해질, 전극 합제, 고체 전해질층 및 전고체 전지 审中-公开
公开(公告)号：KR20200136486A
公开(公告)日：2020-12-07
申请号：KR20207032549
申请日：2019-11-18
申请人： MITSUI MINING & SMELTING CO
发明人： MORINAKA TAIZO , NAKAYAMA SHIGEKI
IPC分类号： H01M10/0562 , H01B1/06 , H01M4/13 , H01M4/62 , H01M10/052
摘要： 고체전해질은, 질량기준으로 100ppm 이상 1000ppm 이하의알루미늄을함유하고, 리튬이온전도성을갖는다. 알루미늄은, 알루미늄산화물유래인것이적합하다. 고체전해질은, 리튬원소, 인원소및 황원소를함유하는황화물고체전해질인것도적합하다. 고체전해질은, 아기로다이트형결정구조를갖는것인것도적합하다. 고체전해질은, 리튬이온전도도가 4.0mS/㎝이상인것도적합하다.

9. 发明公开

KR20200135303A 조화 처리 구리박, 캐리어를 구비한 구리박, 동장 적층판 및 프린트 배선판 审中-公开
公开(公告)号：KR20200135303A
公开(公告)日：2020-12-02
申请号：KR20207023015
申请日：2019-03-20
申请人： MITSUI MINING & SMELTING CO
发明人： KATO TSUBASA , MATSUDA MITSUYOSHI , IIDA HIROTO , TAKANASHI AKITOSHI , YOSHIKAWA KAZUHIRO
IPC分类号： C25D5/10 , B32B15/20 , C25D1/04 , C25D5/16 , H05K1/09
摘要： 세선회로형성에적합한저조도의조화처리구리박이면서, SAP법에사용한경우에, 무전해구리도금에대한에칭성및 드라이필름해상성뿐만아니라, 전단강도라고하는관점에서의회로밀착성도우수한표면프로파일을적층체에부여가능한, 조화처리구리박이제공된다. 이조화처리구리박은, 적어도한쪽측에조화처리면을갖는조화처리구리박이며, 조화처리면이복수의조화입자를구비하여이루어지고, 조화처리구리박의길이 10㎛의단면에있어서의조화입자의면적 S(㎛2)에대한조화입자의주위길이 L(㎛)의제곱의비 L2/S의평균값이 16 이상 30 이하이고, 또한조화처리면의십점평균거칠기 Rz가 0.7㎛이상 1.7㎛이하이다.

10. 发明公开

KR20100106934A Carrier film-attached electrolyte copper foil, method for manufacturing the same, and copper foil laminates obtained by using the same 有权
标题翻译：载体膜连接的电解铜箔，其制造方法和使用其获得的铜箔层压板
公开(公告)号：KR20100106934A
公开(公告)日：2010-10-04
申请号：KR20100026149
申请日：2010-03-24
申请人： MITSUI MINING & SMELTING CO
发明人： TSUYOSHI HIROAKI , OBATA SHINICHI , TATEOKA AYUMU
IPC分类号： B32B15/04 , B32B15/20 , C25D7/06 , H05K1/09
CPC分类号： B32B15/20 , B32B7/02 , B32B15/043 , C25D3/38 , H05K1/09
摘要： PURPOSE: A carrier foil attached electrolysis copper foil, a manufacturing method thereof, and a copper foil laminate obtained by the carrier foil attached electrolysis copper foil are provided to have a low and stable peeling degree of a carrier foil. CONSTITUTION: When a depth direction profile of a heat resisting metal component is measured forward the carrier foil side using a GDS analysis device in an electrolysis copper foil layer side of a corresponding normal carrier foil attached electrolysis copper foil(1), a half value width of a peak is W1. When a depth direction profile of a heat resisting metal component is measured forward the electrolysis copper foil layer side after heating the carrier foil attached electrolysis copper foil at 300°C for 120 minutes under the air, a half value width of a peak is W2. The relation of ([W2] - [W1]) / [W1]
摘要翻译：目的：提供一种载体箔附着电解铜箔及其制造方法和通过载体箔附着电解铜箔获得的铜箔层压体，以使载体箔的剥离度低。构成：在相应的正常载体箔附着电解铜箔（1）的电解铜箔层侧使用GDS分析装置向前测量耐热性金属成分的深度方向剖面时，载体箔侧，半值宽度的峰值是W1。当在空气中在300℃下加热载体箔附着电解铜箔120分钟后，向前测量耐热金属成分的深度方向分布，电解铜箔层侧，峰值的半值宽度为W2。满足（[W2] - [W1]）/ [W1] <= 0.3的关系。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式