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    • 81. 发明授权
    • 터널 자기 저항 효과 디바이스 및 포터블 퍼스널 디바이스
    • 터널자기저항효과디바이스및포터블퍼스널디바이스
    • KR100438342B1
    • 2004-07-02
    • KR1020010055757
    • 2001-09-11
    • 가부시끼가이샤 도시바
    • 아마노미노루사이또요시아끼
    • G11B5/39
    • H01L43/08B82Y10/00B82Y25/00G01R33/093G01R33/098G11B5/3906G11B5/3909G11C11/15H01F10/3254H01F10/3268H01F10/3272H01L27/228
    • A TMR device comprising an antiferromagnetic layer made of an antiferromagnetic material containing Mn, a magnetization fixed layer made of a ferromagnetic material, a tunnel barrier layer made of a dielectric material, and a magnetization free layer made of a ferromagnetic material. An insulator material layer is inserted in the magnetization fixed layer at a distance from the antiferromagnetic material layer and the tunnel barrier layer. One material can be expressed by NX, where X is a first element selected from the group consisting of oxygen, nitrogen and carbon; and N is a second element, provided that the bonding energy between the first and the second elements is higher than the bonding energy between manganese and the first element. A second material can be expressed by MX, where M is an element selected from the group consisting of titanium, tantalum, vanadium, aluminum, europium, and scandium; and X is an element selected from the group consisting of oxygen, nitrogen and carbon. The tunnel magnetoresistance effect device suppresses the diffusion of Mn from the Mn based alloy constituting the antiferromagnetic material layer even after heat treatment is performed.
    • 一种TMR器件,包括由含Mn的反铁磁材料制成的反铁磁层,由铁磁材料制成的磁化固定层,由电介质材料制成的隧道势垒层和由铁磁材料制成的磁化自由层。 将绝缘体材料层插入到磁化固定层中与反铁磁材料层和隧道势垒层相距一定距离处。 一种材料可以用NX表示,其中X是选自氧,氮和碳的第一种元素; 并且N是第二元素,条件是第一和第二元素之间的键能高于锰和第一元素之间的键能。 第二材料可以用MX表示,其中M是选自钛,钽,钒,铝,铕和钪的元素; X是选自氧,氮和碳的元素。 即使在执行热处理之后,隧道磁阻效应器件也抑制了Mn从构成反铁磁材料层的Mn基合金的扩散。