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    • 23. 发明公开
    • 산화 인듐 주석 타겟, 이의 제조 방법 및 이로부터 제조된산화 인듐 주석 투명 전극
    • 氧化铟锡靶,其制造方法和使用其制造的透明电极
    • KR1020090000890A
    • 2009-01-08
    • KR1020070064775
    • 2007-06-28
    • 코닝정밀소재 주식회사
    • 이상철최준호강신혁정준희박주옥조우석
    • C23C14/34
    • A high density indium tin oxide target which can form a film at a high speed and can be used for a long time by suppressing arcing and nodules during the formation of a transparent conductive thin film by sputtering is provided, a method for preparing the indium tin oxide target is provided, and a transparent indium tin oxide electrode for display devices with excellent electrical properties, which is manufactured from the indium tin oxide target, is provided. A method for preparing an indium tin oxide target comprises: a slurry preparation step of mixing an indium oxide powder, a tin oxide powder, and an oxide powder containing calcium and aluminum to prepare a slurry; a powdering step of milling the slurry and drying the milled slurry to prepare a dried powder; a molding step of molding the dried powder to prepare a green compact; and a sintering step of sintering the green compact. The oxide powder containing calcium and aluminum is i) a calcium aluminate(CaAl2O4) powder or ii) a powder mixture of calcium carbonate(CaCO3) and aluminum oxide(Al2O3). The calcium aluminate powder has an average particle size of 0.1 to 2 mum.
    • 提供了一种可以通过溅射形成透明导电薄膜而通过抑制电弧和结节长期形成薄膜并可长时间使用的高密度铟锡氧化物靶,制备铟锡的方法 提供氧化物靶,并且提供由氧化铟锡靶制造的具有优异电性能的显示器件的透明氧化铟锡电极。 制备氧化铟锡靶的方法包括:将氧化铟粉末,氧化锡粉末和含有钙和铝的氧化物粉末混合以制备浆料的浆料制备步骤; 研磨浆料并干燥研磨的浆料以制备干燥粉末的粉化步骤; 模制干燥粉末以制备生坯的模制步骤; 以及烧结生坯的烧结步骤。 含有钙和铝的氧化物粉末是i)铝酸钙(CaAl 2 O 4)粉末,或ii)碳酸钙(CaCO 3)和氧化铝(Al 2 O 3)的粉末混合物。 铝酸钙粉末的平均粒径为0.1〜2μm。
    • 24. 发明授权
    • 수소 발생 촉매, 수소 발생 장치 및 그 제조방법
    • 用于生成氢,氢生成装置的催化剂和制造催化剂的方法
    • KR101495755B1
    • 2015-03-02
    • KR1020130157890
    • 2013-12-18
    • 코닝정밀소재 주식회사
    • 장재명박주옥
    • B01J37/02B01J23/755B01J23/745
    • C01B3/06B01J27/1856C01B3/02C01B2203/1047C01B2203/1064Y02E60/36
    • 본 발명은, 금속을 용융하는 단계; 용융된 금속을 급속 냉각 하면서 분말화하여 비정질 금속 분말로 만드는 단계; 상기 비정질 금속 분말을 전해액 중에 침전시키는 단계; 및 상기 전해액에 전류를 인가하는 단계를 포함하는 것을 특징으로 하는 수소 발생 촉매 제조방법. 또한, 본 발명은, 비정질 금속의 분말로 이루어지고, 상기 금속은 Ni, Fe, Co 및 Zr 중 어느 하나와, Pd, Pt, P, Be, Si, C, Ag, Mg, Ga, Y 및 Al중 적어도 둘 이상을 포함하는 것을 특징으로 하는 수소 발생 촉매를 제공한다. 또한, 본 발명은, 상기 수소 발생 촉매와 알칼리수 또는 암모니아수를 반응시켜 수소를 발생시키는 것을 특징으로 하는 수소 발생 장치를 제공한다.
    • 本发明提供了一种制氢工艺的方法,包括以下步骤:熔融金属; 粉碎熔融金属,同时快速冷却制成无定形金属粉末; 在电解液中析出无定形金属粉末; 并向电解质施加电流。 此外,本发明提供的是由非晶态金属粉末制成的氢发生催化剂,其特征在于,Ni,Fe,Co,Zr中的至少一种,Pd,Pt, P,Be,Si,C,Ag,Mg,Ga,Y和Al。 此外,本发明中还提供了一种通过氢生成催化剂与碱性水或氨水反应生成氢的氢生成装置。
    • 27. 发明公开
    • ITO 타겟 제조방법 및 이에 의해 제조된 ITO 타겟
    • 使用该方法制备氧化铅的氧化铅靶和其氧化铅靶的方法
    • KR1020130012647A
    • 2013-02-05
    • KR1020110073908
    • 2011-07-26
    • 코닝정밀소재 주식회사
    • 박훈이은경박주옥윤한호
    • C23C14/34B22F3/12C04B35/457
    • PURPOSE: A method for manufacturing an ITO(Indium Tin Oxide) target and a manufactured ITO target by the same are provided to form a ULPA(Ultra Low Particulate Air) filter with PTFE(polytetrafluoroethylene) material, thereby improving the releasability of a molded article, and reducing a defective rate of sintering. CONSTITUTION: A method for manufacturing an ITO target comprises: a first step of preparing In2O3 powder and SnO2 powder; a second step of making the In2O3 powder and the SnO2 powder into a slurry(S); and a third step of making the slurry into a molded article by wet pressing. The average grain size of the In2O3 powder and the SnO2 powder is 0.1-3.0 micrometers. The first step includes a process in which the In2O3 powder and the SnO2 powder are agglomerated by heat-treating at a temperature less than the sintering temperature. The second step includes a process in which the In2O3 powder and the SnO2 powder are put in distilled water so that a liquid mixture can be made, and a process in which the liquid mixture is milled. A dispersant of an ammonium-system is added to the distilled water. A binder and an antifoaming agent are further added to the distilled water.
    • 目的:提供一种用于制造ITO(氧化铟锡)靶和制造的ITO靶的方法,以形成具有PTFE(聚四氟乙烯)材料的ULPA(超低颗粒空气)过滤器,从而提高模制品的脱模性 ,并降低烧结的缺陷率。 构成:制造ITO靶的方法包括:制备In 2 O 3粉末和SnO 2粉末的第一步骤; 将In 2 O 3粉末和SnO 2粉末制成浆料(S)的第2工序。 以及通过湿压将浆料制成模制品的第三步骤。 In2O3粉末和SnO2粉末的平均粒径为0.1-3.0微米。 第一步包括通过在小于烧结温度的温度下进行热处理使In 2 O 3粉末和SnO 2粉末团聚的方法。 第二步骤包括将In 2 O 3粉末和SnO 2粉末放入蒸馏水中以便可以制备液体混合物的方法以及其中混合液体的方法。 向蒸馏水中加入铵系分散剂。 进一步向蒸馏水中加入粘合剂和消泡剂。
    • 28. 发明公开
    • 스퍼터링 타겟 제조방법
    • 方法制造溅射目标和溅射目标的方法
    • KR1020130004715A
    • 2013-01-14
    • KR1020110065937
    • 2011-07-04
    • 코닝정밀소재 주식회사
    • 김철의윤한호박주옥추경문
    • H01L21/203C23C14/02
    • C23C14/3414H01J37/3435
    • PURPOSE: A method for manufacturing a sputtering target and a sputtering target by the method are provided to control the height of a spacer and to prevent the warpage of a target. CONSTITUTION: A bonding material is arranged in the upper surface of a backing plate(S1). A sinter material is loaded in the upper surface of the bonding material(S2). The bonding material is fused(S3). The fused bonding material is cooled to bond the backing plate and the sinter material(S4). [Reference numerals] (AA) Start; (BB) End; (S1) Step of preparing bonding; (S2) Step of loading a sinter material; (S3) Step of melting a bonding material; (S4) Step of bonding
    • 目的:提供一种通过该方法制造溅射靶和溅射靶的方法,以控制间隔物的高度并防止靶的翘曲。 构成:在背板(S1)的上表面上配置接合材料。 烧结材料装入接合材料的上表面(S2)。 接合材料熔融(S3)。 熔融粘合材料被冷却以粘合背板和烧结材料(S4)。 (附图标记)(AA)开始; (BB)结束; (S1)接合步骤; (S2)装载烧结材料的步骤; (S3)熔接接合材料的工序; (S4)接合工序