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21. 发明公开

KR1020080031602A 표시 기판 및 이를 구비한 전기영동 표시장치 有权
标题翻译：显示基板和具有该基板的电子显示装置
公开(公告)号：KR1020080031602A
公开(公告)日：2008-04-10
申请号：KR1020060121945
申请日：2006-12-05
申请人： 삼성디스플레이 주식회사
发明人： 배주한 , 송근규 , 신성식 , 김보성
IPC分类号： G02F1/167
CPC分类号： G02F1/167 , C25D1/12 , G02F2001/1676 , G02F2001/1678 , G02F2201/123
摘要： A display substrate and an electro phoretic display having the same are provided to form a passivation layer for covering a TFT(Thin Film Transistor) layer through an opaque pixel electrode and opaque material, thereby preventing deterioration of luminance caused by leaked light and preventing leakage currents of a TFT caused by the leaked light. A display substrate for an electro phoretic display comprises the followings. A gate line is formed on an insulating substrate(110). A data line(172) is prolonged in a direction of crossing the gate line. A switching device is connected to the gate line and the data line. A pixel electrode is electrically connected with the switching device and includes a reflection electrode layer for reflecting light and an absorption electrode layer for absorbing the light.
摘要翻译：提供显示基板和具有该显示基板的电泳显示器以形成用于通过不透明像素电极和不透明材料覆盖TFT（薄膜晶体管）层的钝化层，从而防止由泄漏光引起的亮度劣化并防止漏电流由漏光引起的TFT。用于电泳显示器的显示基板包括以下部件。在绝缘基板（110）上形成栅极线。数据线（172）在与栅极线交叉的方向上延长。开关器件连接到栅极线和数据线。像素电极与开关器件电连接，并且包括用于反射光的反射电极层和用于吸收光的吸收电极层。

22. 发明公开

KR1020080031090A 표시 기판, 이의 제조 방법 및 이를 구비하는 전기영동표시장치 有权
标题翻译：显示基板，制造方法和具有该显示基板的电泳显示器
公开(公告)号：KR1020080031090A
公开(公告)日：2008-04-08
申请号：KR1020060097465
申请日：2006-10-03
申请人： 삼성디스플레이 주식회사
发明人： 송근규 , 김보성 , 조승환
IPC分类号： G02F1/167 , G02F1/136 , G02F1/13 , H01L29/786
CPC分类号： G02F1/1368 , G02F1/167 , G02F2001/136231
摘要： A display substrate, a method of manufacturing the display substrate and an electrophoretic display device having the display substrate are provided to form a gate electrode and a pixel electrode at the same time by using the same material, thereby reducing the number of manufacturing steps and the number of masks, improving productivity and decreasing the manufacturing cost. A display substrate(100) includes a base substrate(110), a TFT(Thin Film Transistor)(120) and a pixel electrode(130). The base substrate includes a pixel region which displays an image. The TFT is formed in the pixel region and switches a pixel voltage corresponding to the image. The TFT includes a source electrode(121), a drain electrode(122), an active layer(123) and a gate electrode(125). The source electrode and the drain electrode are formed on the base substrate and the drain electrode is electrically connected to the pixel electrode. The active layer covers the source electrode and the drain electrode. The gate electrode is formed of the same material as the pixel electrode and disposed on the active layer. The gate electrode and the pixel electrode are formed at the same time. The pixel electrode is formed in the pixel region, electrically connected to the TFT, and outputs the pixel voltage.
摘要翻译：提供显示基板，制造显示基板的方法和具有显示基板的电泳显示装置，以通过使用相同的材料同时形成栅电极和像素电极，从而减少制造步骤的数量和口罩数量，提高生产率和降低制造成本。显示基板（100）包括基底（110），TFT（薄膜晶体管）（120）和像素电极（130）。基底基板包括显示图像的像素区域。在像素区域中形成TFT并切换与图像对应的像素电压。 TFT包括源电极（121），漏电极（122），有源层（123）和栅电极（125）。源电极和漏极形成在基底基板上，漏电极与像素电极电连接。有源层覆盖源电极和漏电极。栅电极由与像素电极相同的材料形成并设置在有源层上。栅电极和像素电极同时形成。像素电极形成在与TFT电连接的像素区域中，并输出像素电压。

23. 发明公开

KR1020080029769A 박막 트랜지스터 표시판 및 그 제조 방법 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：KR1020080029769A
公开(公告)日：2008-04-03
申请号：KR1020070071639
申请日：2007-07-18
申请人： 삼성디스플레이 주식회사
发明人： 조승환 , 노정훈 , 김보성 , 송근규 , 최태영 , 윤민호
IPC分类号： H01L29/786
CPC分类号： H01L51/105 , H01L27/283 , H01L51/0003 , H01L51/0545
摘要： A thin film transistor array panel and a method for manufacturing the same are provided to reduce a thickness of an organic semiconductor by reducing a thickness of a lower data line. An insulating layer is formed on a gate electrode(124). An organic semiconductor(154) is formed on the insulating layer. A source electrode(173) and a drain electrode(175) are formed on the organic semiconductor. The source electrode and the drain electrode are positioned opposite to each other. A pixel electrode(191) is connected to the drain electrode. The source electrode and the drain electrode include first source and drain electrodes and second source and drain electrodes. The first source and drain electrodes are opposite to each other in a first interval. The second source and drain electrodes are opposite to each other in a second interval.
摘要翻译：提供了一种薄膜晶体管阵列面板及其制造方法，通过减小较低数据线的厚度来减小有机半导体的厚度。在栅电极（124）上形成绝缘层。在绝缘层上形成有机半导体（154）。在有机半导体上形成源电极（173）和漏电极（175）。源电极和漏极彼此相对定位。像素电极（191）连接到漏电极。源极和漏极包括第一源极和漏极以及第二源极和漏极。第一源极和漏极在第一间隔中彼此相对。第二源极和漏极在第二间隔中彼此相对。

24. 发明公开

KR1020080010761A 유기 박막 트랜지스터 기판 및 그 제조 방법 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：KR1020080010761A
公开(公告)日：2008-01-31
申请号：KR1020060071235
申请日：2006-07-28
申请人： 삼성디스플레이 주식회사
发明人： 조승환 , 김보성 , 송근규 , 최태영
IPC分类号： G02F1/136 , G02F1/361
CPC分类号： H01L51/0545 , H01L27/3246 , H01L51/052
摘要： An organic thin film transistor substrate is provided to form a second bank insulator film on a second conductive layer formed between source and drain electrodes to prevent an organic semiconductor layer from infiltrating into pixel electrodes. Gate lines are formed on a substrate(101). Data lines(104) cross the gate lines, having an organic gate insulator film(112) between the gate lines and the data lines, to define pixel areas. Thin film transistors are connected with the gate lines and the data lines, including an organic semiconductor layer(114). Pixel electrodes(122) are connected with the thin film transistors. An organic passivation layer(120) protects the thin film transistors. A first bank insulator film(116) forms filling areas of the organic gate insulator film and the organic semiconductor layer. A second bank insulator film(118) forms a filling area of the organic semiconductor layer with the first bank insulator film and is formed on source electrodes(108) and drain electrodes(110) of the thin film transistors.
摘要翻译：提供有机薄膜晶体管基板，以在形成于源极和漏极之间的第二导电层上形成第二绝缘体膜，以防止有机半导体层渗入像素电极。栅极线形成在基板（101）上。数据线（104）跨越栅极线，在栅极线和数据线之间具有有机栅极绝缘膜（112），以限定像素区域。薄膜晶体管与栅极线和数据线连接，包括有机半导体层（114）。像素电极（122）与薄膜晶体管连接。有机钝化层（120）保护薄膜晶体管。第一堤绝缘膜（116）形成有机栅绝缘膜和有机半导体层的填充区域。第二堤绝缘膜（118）用第一堤绝缘膜形成有机半导体层的填充区域，并形成在薄膜晶体管的源电极（108）和漏电极（110）上。

25. 发明公开

KR1020070078228A 표시장치와 이의 제조방법 有权
标题翻译：其显示装置及其制造方法
公开(公告)号：KR1020070078228A
公开(公告)日：2007-07-31
申请号：KR1020060008295
申请日：2006-01-26
申请人： 삼성디스플레이 주식회사
发明人： 최태영 , 송근규 , 조승환
IPC分类号： H01L29/786
CPC分类号： G02F1/136227 , G02F1/136209 , G02F2202/02 , H01L27/3248 , H01L27/3262 , G02F1/136286
摘要： A display device and its manufacturing method are provided to enhance remarkably characteristics of a TFT. A display device includes an insulating substrate, a data line, a TFT, and a pixel electrode. The data line(121) includes a conductive layer(123). The data line is formed on the insulating substrate. The TFT includes at least one source electrode(143) electrically connected with the conductive layer of the data line and a drain electrode(141) spaced apart from the source electrode. The drain electrode is formed along a peripheral portion of the source electrode. The pixel electrode(145) is electrically connected with the conductive layer.
摘要翻译：提供一种显示装置及其制造方法，以增强TFT的显着特性。显示装置包括绝缘基板，数据线，TFT和像素电极。数据线（121）包括导电层（123）。数据线形成在绝缘基板上。 TFT包括与数据线的导电层电连接的至少一个源极（143）和与源电极间隔开的漏电极（141）。漏电极沿着源电极的周边部分形成。像素电极（145）与导电层电连接。

26. 发明公开

KR1020070062859A 표시장치와 이의 제조방법 有权
标题翻译：显示装置及其制造方法
公开(公告)号：KR1020070062859A
公开(公告)日：2007-06-18
申请号：KR1020050122752
申请日：2005-12-13
申请人： 삼성디스플레이 주식회사
发明人： 오준학 , 송근규
IPC分类号： H05B33/00 , H05B33/10
CPC分类号： H01L51/102 , B82Y10/00 , B82Y30/00 , H01L51/0005 , H01L51/0545
摘要： A display device and a manufacturing method thereof are provided to prevent a plasma and a chemical material from being inputted to a gate insulation layer by performing a surface treatment for a second separator to have water and oil repellent characteristics. A display device includes a gate line(143), a gate insulation film(155), a plurality of conducting layers(161,163), and an organic semiconductor layer(190). The gate line(143) has a gate electrode formed on an insulation substrate. The gate insulation film(155) is formed on the gate electrode. The plurality of conducting layers(161,163) is formed to be apart from the gate electrode on the gate insulation film(155). The plurality of conducting layers(161,163) has a source electrode and a drain electrode which define a channel region. The organic semiconductor layer(190) is formed on the channel region. The conducting layers(161,163) have a metal layer and a transparent electrode layer.
摘要翻译：提供了一种显示装置及其制造方法，以通过对第二隔膜进行表面处理来防止等离子体和化学材料被输入到栅极绝缘层，从而具有拒水拒油特性。显示装置包括栅极线（143），栅极绝缘膜（155），多个导电层（161,163）和有机半导体层（190）。栅极线（143）具有形成在绝缘基板上的栅电极。栅极绝缘膜（155）形成在栅电极上。多个导电层（161,163）形成为与栅极绝缘膜（155）上的栅极分离。多个导电层（161,163）具有限定沟道区的源电极和漏电极。有机半导体层（190）形成在沟道区上。导电层（161,163）具有金属层和透明电极层。

27. 发明公开

KR1020070052515A 표시장치와 이의 제조방법 有权
标题翻译：显示装置及其制造方法
公开(公告)号：KR1020070052515A
公开(公告)日：2007-05-22
申请号：KR1020050110230
申请日：2005-11-17
申请人： 삼성디스플레이 주식회사
发明人： 송근규 , 김보성
IPC分类号： H05B33/00 , H05B33/10
CPC分类号： H01L27/3274 , H01L27/3276 , H01L51/0078 , H01L51/0545
摘要： 본 발명은 표시장치와 이의 제조방법에 관한 것이다. 본 발명에 따른 표시장치는, 절연기판과; 절연기판 상에 형성되어 있으며, 게이트 전극을 포함하는 게이트 배선과; 게이트 전극을 덮고 있는 게이트 절연막과; 게이트 절연막 상에 형성되어 있으며, 게이트 전극을 중심으로 상호 이격 배치되어 채널영역을 정의하는 소스 전극과 드레인 전극을 포함하는 투명전극층과; 투명전극층의 일부를 덮고 있으며 게이트 배선과 절연 교차하여 화소를 정의하는 데이터 배선; 및 채널영역에 형성되어 있는 유기반도체층을 포함하는 것을 특징으로 한다. 이에 의해, 특성이 향상된 새로운 구조의 유기박막트랜지스터를 포함하는 표시장치가 제공된다.
摘要翻译：显示装置及其制造方法技术领域本发明涉及一种显示装置及其制造方法。根据本发明的显示装置包括：绝缘基板; 形成在绝缘基板上并包括栅电极的栅极布线; 覆盖栅电极的栅极绝缘膜; 透明电极层，形成在所述栅绝缘层上，所述透明电极层包括在所述栅电极周围彼此间隔开的源电极和漏电极以限定沟道区; 数据线，覆盖所述透明电极层的一部分并通过与所述栅极线绝缘交叉来限定像素; 并且在沟道区域中形成有机半导体层。由此，提供了一种包括具有改进特性的新结构的有机薄膜晶体管的显示装置。

28. 发明公开

KR1020070043094A 평판표시장치 有权
公开(公告)号：KR1020070043094A
公开(公告)日：2007-04-25
申请号：KR1020050098946
申请日：2005-10-20
申请人： 삼성디스플레이 주식회사
发明人： 송근규 , 이용욱
IPC分类号： G02F1/136
CPC分类号： H01L27/124 , G02F1/136286 , G02F2202/022 , G02F2202/10
摘要： 본 발명은 평판표시장치에 관한 것이다. 본 발명에 따른 평판표시장치는, 복수의 게이트선과; 게이트선과 절연교차하여 화소를 정의하는 복수의 데이터선 및; 각 화소에 마련되어 있으며, 유기반도체층을 포함하는 박막트랜지스터를 가지며, 게이트선 연장방향으로 인접한 박막트랜지스터 간의 거리는 게이트선 연장방향의 화소의 폭보다 긴 것을 특징으로 한다. 이에 의해, 유기박막트랜지스터의 특성이 균일하게 나타나는 평판표시장치가 제공된다.

29. 发明公开

KR1020070013132A 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법 无效
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：KR1020070013132A
公开(公告)日：2007-01-30
申请号：KR1020050067516
申请日：2005-07-25
申请人： 삼성디스플레이 주식회사
发明人： 송근규 , 김영민 , 최태영
IPC分类号： G02F1/136
CPC分类号： H01L51/0533 , H01L51/0545
摘要： A thin film transistor substrate and a method for manufacturing the same are provided to simplify manufacture by forming an organic semiconductor layer and a first passivation film, and reduce deterioration of properties of the organic semiconductor layer by omitting a process using a plasma or chemical material after forming the organic semiconductor layer. A thin film transistor substrate includes an insulation substrate, gate lines(141) formed on the insulation substrate, a first gate insulator film formed of an inorganic material on the gate lines, having first insulator film contact holes exposing at least a part of the gate lines, a second gate insulator film formed of an organic material on the first gate insulator film, having second insulator film contact holes(156,157,158) corresponding to the first insulator film contact holes. Source and drain electrodes(161,163) are separately formed on the second gate insulator film for defining a channel area. An organic semiconductor layer(170) is formed on the channel area.
摘要翻译：提供薄膜晶体管基板及其制造方法，以通过形成有机半导体层和第一钝化膜来简化制造，并且通过在使用等离子体或化学材料之后省略使用等离子体或化学材料的工艺来降低有机半导体层的性能的劣化形成有机半导体层。薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极线（141），在栅极线上由无机材料形成的第一栅极绝缘膜，具有暴露栅极的至少一部分的第一绝缘膜接触孔在第一栅绝缘膜上由有机材料形成的第二栅绝缘膜具有与第一绝缘膜接触孔对应的第二绝缘膜接触孔（156,157,158）。源极和漏极（161,163）分别形成在第二栅绝缘膜上，用于限定沟道面积。在沟道区上形成有机半导体层（170）。

30. 发明公开

KR1020170124428A 어레이 기판, 이를 포함하는 액정 표시 장치 및 어레이 기판의 제조 방법 审中-实审
标题翻译：阵列基板，包括其的液晶显示器，以及制造阵列基板的方法
公开(公告)号：KR1020170124428A
公开(公告)日：2017-11-10
申请号：KR1020160106017
申请日：2016-08-22
申请人： 삼성디스플레이 주식회사
发明人： 노정훈 , 송근규 , 이현섭
IPC分类号： G02F1/1368 , H01L29/786
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/133512 , G02F1/133514 , G02F1/134327 , G02F2001/134318 , G02F2201/121 , G02F2201/123 , G02F2201/40 , H01L27/1225 , H01L29/786
摘要： 어레이기판, 그를포함하는액정표시장치및 어레이기판의제조방법이제공된다. 본발명의일 실시예에따른어레이기판은제1 기판, 상기제1 기판상에배치되는소스전극, 상기소스전극상에배치되는반도체패턴층, 반도체패턴층상에배치되는드레인전극, 상기드레인전극상에배치되는화소전극및 상기반도체패턴층의적어도일측에배치되는게이트전극을포함한다.
摘要翻译：提供阵列基板，包括该阵列基板的液晶显示器以及制造阵列基板的方法。根据本发明的实施例，阵列基板包括第一基板，设置在第一基板上的源电极，设置在源电极上的半导体图案层，设置在半导体图案层上的漏电极，以及设置在半导体图案层的至少一侧上的栅电极。

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