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    • 12. 发明授权
    • 열전 반도체 모듈 및 이의 제조방법
    • 一种热电半导体模块及其制造方法
    • KR101439461B1
    • 2014-09-17
    • KR1020130135606
    • 2013-11-08
    • 한국기계연구원
    • 임재홍이규환이주열임동찬유인준
    • H01L35/32H01L35/34
    • H01L35/34H01L35/04H01L35/32
    • The present invention relates to a thermoelectric semiconductor module and a manufacturing method thereof. The thermoelectric semiconductor module includes: a thermoelectric semiconductor element; a metal electrode connected to the thermoelectric semiconductor element; an adhesive layer arranged between the thermoelectric semiconductor element and the metal electrode; and a diffusion blocking layer arranged between the adhesive later and the thermoelectric semiconductor element. The diffusion blocking layer is deposited by using an electrochemical method. The diffusion blocking layer can prevent ingredients of the adhesive layer from diffusing into a crystal lattice of the thermoelectric semiconductor element. The diffusion blocking layer is also formed by using an electrolytic plating method to have good compatibility with the bordering surface of the diffusion blocking layer and thermoelectric semiconductor element patterns to enhance the adhesion of the thermoelectric semiconductor element patterns.
    • 本发明涉及一种热电半导体模块及其制造方法。 热电半导体模块包括:热电半导体元件; 连接到所述热电半导体元件的金属电极; 布置在热电半导体元件和金属电极之间的粘合剂层; 以及布置在稍后的粘合剂和热电半导体元件之间的扩散阻挡层。 通过使用电化学方法沉积扩散阻挡层。 扩散阻挡层可以防止粘合剂层的成分扩散到热电半导体元件的晶格中。 扩散阻挡层也通过使用电解电镀法形成,以与扩散阻挡层和热电半导体元件图案的边界表面具有良好的相容性,以增强热电半导体元件图案的粘附。