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111. 发明公开

KR1020000060559A 세트의 자동 전원 오프 장치 및 방법 失效
标题翻译：用于自动断电的功能的装置和方法
公开(公告)号：KR1020000060559A
公开(公告)日：2000-10-16
申请号：KR1019990008959
申请日：1999-03-17
申请人： 주식회사 한국전자홀딩스
发明人： 김종식
IPC分类号： H04N5/63
CPC分类号： H04N5/63 , H04N2005/4426
摘要： PURPOSE: A device and method for automatically powering off are provided to minimize a power consumption by automatically powering off a set when there is no person. CONSTITUTION: The device for automatically powering off a set(8) includes an infrared ray transmitting unit(2), an infrared ray receiving unit(4) and a control unit(6). The infrared ray transmitting unit generates an infrared ray signal corresponding to an identification information signal. The infrared ray receiving unit receives the infrared ray signal and generates an infrared ray detection signal. The control unit generates the identification information signal for transferring to the infrared ray transmitting unit when there is no user command, and decodes the infrared ray detection signal and if the infrared ray detection signal is the identification information signal, then calculates the feedback time of the identification information signal and counts only when the feedback time goes over a first critical value and powers off the set when the counted value is over a second critical value.
摘要翻译：目的：提供自动关机的设备和方法，以便在没有人时自动关闭设备，以最大限度地降低功耗。构成：用于自动断电的装置（8）包括红外线发射单元（2），红外线接收单元（4）和控制单元（6）。红外线发射单元产生对应于识别信息信号的红外线信号。红外线接收单元接收红外线信号并产生红外线检测信号。当没有用户命令时，控制单元产生用于传送到红外线发射单元的识别信息信号，并且解码红外线检测信号，并且如果红外线检测信号是识别信息信号，则计算出反馈时间识别信息信号并且仅当反馈时间超过第一临界值时计数，并且当计数值超过第二临界值时关闭该值。

112. 发明公开

KR1020000060191A 열영상 검출용 초전 소자 제조방법 失效
标题翻译：用于检测热像的光电装置的制造方法
公开(公告)号：KR1020000060191A
公开(公告)日：2000-10-16
申请号：KR1019990008302
申请日：1999-03-12
申请人： 주식회사 한국전자홀딩스
发明人： 한명수 , 김태훈 , 정민석 , 임성수 , 한석룡
IPC分类号： H01L31/00
摘要： PURPOSE: A manufacture method of a pyroelectric device for detecting a thermal image is provided to minimize a surface damage of a dielectric layer and to realize a simple process. CONSTITUTION: A dielectric layer of ferroelectric material having a thickness of 250-350 micrometers is prepared. After the dielectric layer is placed in a cell having a central quartz plate, grooves are formed on the dielectric layer by applying a laser beam through the quartz plate. The grooves are then wet-cleaned with desired depth and width, and an etch stopper(14) is formed in the grooves. Next, a thin layer stack having a first electrode layer(16), an infrared absorption layer(18), and a semipermeable layer(20) is formed on the dielectric layer, and a glass(24) is then adhered to the thin layer stack by an adhesive(22). A back side of the dielectric layer is polished, so that the etch stopper(14) is exposed between dielectric patterns(10a). A second electrode layer(26) is then selectively formed on the dielectric patterns(10a), and the etch stopper(14) is removed.
摘要翻译：目的：提供用于检测热图像的热电装置的制造方法，以使介电层的表面损伤最小化并实现简单的工艺。构成：制备厚度为250-350微米的铁电材料的电介质层。在将电介质层放置在具有中心石英板的电池中之后，通过施加穿过石英板的激光束在电介质层上形成凹槽。然后将凹槽以期望的深度和宽度湿清洗，并且在凹槽中形成蚀刻停止器（14）。接下来，在电介质层上形成具有第一电极层（16），红外线吸收层（18）和半透膜（20）的薄层叠层，然后将玻璃（24）粘附到薄层通过粘合剂（22）堆叠。抛光电介质层的背面，使得蚀刻停止层（14）在电介质图案（10a）之间露出。然后在电介质图案（10a）上选择性地形成第二电极层（26），并且去除蚀刻停止层（14）。

113. 发明授权

KR100267084B1 바이폴라트랜지스터의에미터형성방법 失效
标题翻译：双极晶体管发射体的形成方法
公开(公告)号：KR100267084B1
公开(公告)日：2000-10-02
申请号：KR1019970061023
申请日：1997-11-19
申请人： 주식회사 한국전자홀딩스
发明人： 김병철 , 이광진
IPC分类号： H01L21/328
摘要： PURPOSE: A method for forming an emitter of a bipolar transistor is provided to maintain constantly the density of a phosphorus and an arsenic by using an ion implanting process. CONSTITUTION: An epi-layer(12) of the second conductive type is formed on a silicon substrate(10) of the first conductive type. A base region(30) of the first conductive type is formed within the epi-layer(12). An oxide layer(20,22) having an opening for exposing a part of the base region(30) is formed on the silicon substrate(10). An ion implanting process is performed on the base region(30) within the opening by using the oxide layer as ion implanting mask. A thermal diffusion process for the ion implanting material is performed to form an emitter region(40) of the second conductive type within the base region(30).
摘要翻译：目的：提供一种用于形成双极晶体管的发射极的方法，以通过使用离子注入工艺不断地维持磷和砷的密度。构成：第二导电类型的外延层（12）形成在第一导电类型的硅衬底（10）上。第一导电类型的基极区域（30）形成在外延层（12）内。在硅基板（10）上形成具有用于露出基部区域（30）的一部分的开口的氧化物层（20,22）。通过使用氧化物层作为离子注入掩模，在开口内的基底区域（30）上进行离子注入工艺。执行用于离子注入材料的热扩散过程，以在基极区域（30）内形成第二导电类型的发射极区域（40）。

114. 发明授权

KR100267082B1 사이리스터소자및그의제조방법 失效
标题翻译： THYRISTOR设备及其制造方法
公开(公告)号：KR100267082B1
公开(公告)日：2000-10-02
申请号：KR1019970015506
申请日：1997-04-25
申请人： 주식회사 한국전자홀딩스
发明人： 이종홍 , 이병용 , 신진철 , 윤석남
IPC分类号： H01L29/74
摘要： PURPOSE: A thyristor device and a method for manufacturing the same are provided to protect a thyristor device by changing only an internal structure. CONSTITUTION: An anode(10) is formed on a substrate. The first semiconductor layer(20) of the first conductive type, the second semiconductor layer(30) of the second conductive type, and the third semiconductor layer(40) of the first conductive type are formed on the anode(10). The fourth semiconductor layer(50) of the second conductive type and the fifth semiconductor layer(100) of the second conductive type are formed within the third semiconductor layer(40). A trench is formed within the fifth semiconductor layer(100). An inside of the trench is filled with a metal material. A gate(90) and a cathode(60) are formed.
摘要翻译：目的：提供晶闸管器件及其制造方法，以通过仅改变内部结构来保护晶闸管器件。构成：在基板上形成阳极（10）。第一导电类型的第一半导体层（20），第二导电类型的第二半导体层（30）和第一导电类型的第三半导体层（40）形成在阳极（10）上。第二导电类型的第四半导体层（50）和第二导电类型的第五半导体层（100）形成在第三半导体层（40）内。在第五半导体层（100）内形成沟槽。沟槽的内部填充有金属材料。形成栅极（90）和阴极（60）。

115. 发明授权

KR100264518B1 압력센서의 제조방법 失效
标题翻译：压力传感器的制作方法
公开(公告)号：KR100264518B1
公开(公告)日：2000-10-02
申请号：KR1019980018834
申请日：1998-05-25
申请人： 주식회사 한국전자홀딩스
发明人： 김병철
IPC分类号： H01L29/84
摘要： PURPOSE: A method for manufacturing a pressure sensor is provided to reduce a time for necessary for a manufacturing process by etching a substrate after forming a contact portion and a metal electrode. CONSTITUTION: An isolation region(54) and a formation region are defined by forming the isolation region(54). A base region(55) and an emitter region(56) of a bipolar transistor are formed on the formation region. An insulating layer(59) is formed to insulate a metal electrode. A contact portion is formed to connect the base region and the emitter region with the metal electrode. The metal electrode is formed thereon. A protective layer(62) is formed to protect an upper structure of the substrate(51). The opposite face of the semiconductor substrate(51) is etched partially.
摘要翻译：目的：提供一种用于制造压力传感器的方法，以在形成接触部分和金属电极之后通过蚀刻基板来减少制造过程所需的时间。构成：通过形成隔离区（54）来限定隔离区（54）和形成区。在形成区域上形成双极晶体管的基极区（55）和发射极区（56）。形成绝缘层（59）以使金属电极绝缘。形成接触部分以将基极区域和发射极区域与金属电极连接。金属电极形成在其上。形成保护层（62）以保护衬底（51）的上部结构。部分地蚀刻半导体衬底（51）的相对面。

116. 发明授权

KR100264517B1 압력센서의 제조방법 失效
标题翻译：压力传感器的制作方法
公开(公告)号：KR100264517B1
公开(公告)日：2000-10-02
申请号：KR1019980018833
申请日：1998-05-25
申请人： 주식회사 한국전자홀딩스
发明人： 김병철 , 윤동현
IPC分类号： H01L29/84
摘要： PURPOSE: A method for manufacturing a pressure sensor is provided to reduce a time for necessary for a manufacturing process by using a metal layer as an upper protective layer. CONSTITUTION: An isolation region(54) and a formation region are defined by forming the isolation region(54). A base region(55) and an emitter region(56) of a bipolar transistor are formed on the formation region. An insulating layer(59) is formed to insulate a metal electrode(64). A contact portion is formed to connect the base region and the emitter region with the metal electrode. A metal layer(61) is deposited on a surface of the whole structure. The opposite face of the semiconductor substrate(51) is etched partially. The metal electrode(64) is formed by etching selectively the metal layer(61).
摘要翻译：目的：提供一种用于制造压力传感器的方法，通过使用金属层作为上保护层来减少制造过程所需的时间。构成：通过形成隔离区（54）来限定隔离区（54）和形成区。在形成区域上形成双极晶体管的基极区（55）和发射极区（56）。形成绝缘层（59）以使金属电极（64）绝缘。形成接触部分以将基极区域和发射极区域与金属电极连接。金属层（61）沉积在整个结构的表面上。部分地蚀刻半导体衬底（51）的相对面。通过选择性地蚀刻金属层（61）来形成金属电极（64）。

117. 外观设计

KR3002627610000S 失效
公开(公告)号：KR3002627610000S
公开(公告)日：2000-09-01
申请号：KR3019990023986
申请日：1999-10-07
申请人： 주식회사 한국전자홀딩스
设计人： 김상훈 , 황양호

118. 发明授权

KR100262462B1 습식식각시 수소가스 제거 장치 失效
标题翻译：氢气去除装置在湿蚀刻
公开(公告)号：KR100262462B1
公开(公告)日：2000-09-01
申请号：KR1019980011927
申请日：1998-04-04
申请人： 주식회사 한국전자홀딩스
发明人： 공경준
IPC分类号： H01L21/306
摘要： PURPOSE: An apparatus for removing hydrogen gas is provided to uniformly eject hydrogen gas generated in an etching container over a liquid surface and smoothly eject hydrogen gas ejected to the liquid surface. CONSTITUTION: An apparatus for removing hydrogen gas includes an etching container(13) for containing an etch solution(11) in a sealed space and performing an etching process. A wafer(17) has a circuit pattern of a pressure sensor and is located within the etching solution(11) of the etching container(13). Jigs(21-25) seat the wafer(17) within the etching container(13) and are reciprocated in a straight line according to a given driving signal. A driving means(29) is connected to the jigs(21-25), and goes and returns the jigs(21-25) in a straight line.
摘要翻译：目的：提供一种用于去除氢气的装置，以将在蚀刻容器中产生的氢气均匀地喷射到液面上，并平稳地喷射喷射到液面的氢气。构成：用于除去氢气的装置包括用于在密封空间中容纳蚀刻溶液（11）并执行蚀刻工艺的蚀刻容器（13）。晶片（17）具有压力传感器的电路图形，位于蚀刻容器（13）的蚀刻溶液（11）内。夹具（21-25）将晶片（17）安置在蚀刻容器（13）内，并根据给定的驱动信号沿直线往复运动。驱动装置（29）连接到夹具（21-25）上，并使夹具（21-25）直线返回。

119. 发明授权

KR100262459B1 세라믹콘덴서용유전체조성물 失效
标题翻译：陶瓷电容器用电介质组合物
公开(公告)号：KR100262459B1
公开(公告)日：2000-08-01
申请号：KR1019980004873
申请日：1998-02-18
申请人： 주식회사 한국전자홀딩스
发明人： 이용화
IPC分类号： H01G4/12
摘要： PURPOSE: A dielectric composition for a ceramic capacitor is provided to have a high dielectric rate and satisfy an electric performance such as a temperature feature and a dielectric loss coefficient. CONSTITUTION: The dielectric composition for a ceramic capacitor includes a barium titanate(BaTiO3) of 87.20-92.80 weight %, a magnesium titanate(MgTiO3) of 0.40-2.70 weight %, a bismuth oxide(BiO) of 5.60-5.80 weight %, a tin oxide(SnO) of 0.01-3.70 weight %, a titanium oxide(TiO) of 0.90-3.00 weight %, and a niobium oxide(NbO) of 0.50-1.00 weight %. The bismuth oxide(BiO) and the tin oxide(SnO) produces Bi2(SnO3)3 to improve a temperature feature of the dielectric composition for a ceramic capacitor. The dielectric composition for a ceramic capacitor satisfies a dielectric rate of 1,400-1,600, a temperature feature of Y5P, and a dielectric loss coefficient less than 1.5%.
摘要翻译：目的：提供一种用于陶瓷电容器的电介质组合物以具有高介电率并满足诸如温度特性和介电损耗系数的电性能。构成：陶瓷电容器的电介质组合物包括：87.20-92.80重量％的钛酸钡（BaTiO 3），0.40-2.70重量％的钛酸镁（MgTiO 3），5.60-5.80重量％的氧化铋（BiO），5.60-5.80重量％的氧化铋氧化锡（SnO）为0.01-3.70重量％，氧化钛（TiO）为0.90-3.00重量％，氧化铌（NbO）为0.50-1.00重量％。氧化铋（BiO）和氧化锡（SnO）产生Bi 2（SnO 3）3以改善陶瓷电容器的电介质组合物的温度特征。用于陶瓷电容器的电介质组合物满足介电速率为1,400-1,600，Y5P的温度特性，介电损耗系数小于1.5％。

120. 发明授权

KR100262458B1 세라믹콘덴서용유전체조성물 失效
标题翻译：陶瓷电容器用电介质组合物
公开(公告)号：KR100262458B1
公开(公告)日：2000-08-01
申请号：KR1019980004872
申请日：1998-02-18
申请人： 주식회사 한국전자홀딩스
发明人： 이용화
IPC分类号： H01G4/12
摘要： PURPOSE: A dielectric composition for a ceramic capacitor is provided to satisfy a dielectric rate of 11,000¯13,000, a temperature feature of Z5U, and a dielectric loss coefficient less than 2.50%. CONSTITUTION: The dielectric composition for a ceramic capacitor includes a barium titanate(BaTiO3) of 84.00¯88.00 weight %, a calcium zirconate(CaZrO3) of 7.00¯12.50 weight %, a barium stanniate(BaSnO3) of 0.01¯8.00 weight %, and a calcium titanate(CaTiO3) of 0.01¯3.00 weight %. The dielectric composition for a ceramic capacitor satisfies a dielectric rate of 11,000¯13,000, a temperature feature of Z5U, and a dielectric loss coefficient less than 2.50%. The temperature feature of Z5U is an EIA standard which satisfies a volume change range of +20 ¯ -55% based on 20°C at 10¯ 85°C.
摘要翻译：目的：提供一种用于陶瓷电容器的电介质组合物，以满足介电速率11000-13000，Z5U的温度特性和小于2.50％的介电损耗系数。构成：陶瓷电容器的电介质组合物包括：84.00-88.00重量％的钛酸钡（BaTiO 3），7.00〜12.50重量％的锆酸钙（CaZrO 3），0.01〜8.00重量％的锡锡酸钡（BaSnO 3），以及 0.01〜3.00重量％的钛酸钙（CaTiO 3）。陶瓷电容器的电介质组合物满足介电率11000-13000，Z5U的温度特性，介电损耗系数小于2.50％。 Z5U的温度特性是一个EIA标准，在10〜85℃下，20℃的温度范围满足+ 20〜55％的体积变化范围。

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