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    • 2. 发明专利
    • SURFACE ACOUSTIC WAVE ELEMENT
    • JPH04179309A
    • 1992-06-26
    • JP30785290
    • 1990-11-14
    • SEIKO EPSON CORP
    • IWAMOTO OSAMU
    • H03H9/68
    • PURPOSE:To improve the connecting strength of an external circuit and connecting pins by means of soldering and to miniaturize an element by providing the layer of Ag or Au on a connecting part of the external circuit added to an electrode made of Al or Al alloy. CONSTITUTION:The element is a one port-typed resonator where reflectors 3 are arranged at the both sides of an interdigital transducer electrode 2 made of Al on a crystal substrate 1. It has the connecting part 4 to the external circuit taken out from the interdigital transducer electrode 2 and the Ag layer 4 or the Au layer are provided as a second electrically conductive metal by a laminated structure on the connecting part 4. Through the connecting strength of Al or Al alloy is low, but that of Ag or Au can be made extremely strong. Thus, the connecting strength of the connecting pin 5 and the connecting part 4 of the external circuit by soldering is improved and the miniaturized surface acoustic wave element is obtained.
    • 5. 发明专利
    • Surface acoustic wave variable phase shifter
    • 表面声波可变相位移
    • JPS5964911A
    • 1984-04-13
    • JP17448582
    • 1982-10-06
    • Nippon Telegr & Teleph Corp
    • URABE SHIYUUJISAITOU SHIGEKI
    • H03H3/08H03H9/68
    • H03H9/68
    • PURPOSE:To obtain a variable phase shifter which can be integrated and miniaturized by varying the gain of a variable gain amplifier which amplifies each output signal of a surface acoustic wave element and then varying the phase of the output of a synthesizing element which synthesizes the output of the variable gain amplifier. CONSTITUTION:For a surface acoustic wave element 1, the surface acoustic wave excited by an input electrode 1a is converted into an electric signal by output electrodes 1b and 1c. These electrodes 1b and 1c produce different output phases. The output of the electrode 1b is amplified by a variable gain amplifier 2; while the output of the electrode 1c is amplified by a variable gain amplifier 1c. These amplified outputs are applied to input electrodes 7a and 7b of a surface acoustic wave element 7, and this element 7 functions as a synthesizing element. The gains of amplifiers 2 and 3 are varied to change the output phase shift generated from the electrode 7b of the element 7. Both elements 1 and 7 can be formed on the same surface acoustic wave substrate U and also converted into an IC. Thus, a compact and light-weight variable phase shifter is obtained.
    • 目的:获得一个可变相移器,通过改变可变增益放大器的增益可以集成和小型化,该可变增益放大器放大表面声波元件的每个输出信号,然后改变合成元件的输出的相位,该合成元件的合成输出 的可变增益放大器。 构成:对于表面声波元件1,由输入电极1a激励的表面声波由输出电极1b和1c转换成电信号。 这些电极1b和1c产生不同的输出相位。 电极1b的输出由可变增益放大器2放大; 而电极1c的输出由可变增益放大器1c放大。 这些放大的输出被施加到表面声波元件7的输入电极7a和7b,并且该元件7用作合成元件。 改变放大器2和3的增益以改变从元件7的电极7b产生的输出相移。元件1和7可以形成在相同的表面声波衬底U上,并且也被转换为IC。 因此,获得了紧凑且轻量级的可变移相器。
    • 6. 发明专利
    • Surface acoustic wave filter having function for dividing wave
    • 具有分波功能的表面声波滤波器
    • JPS58197912A
    • 1983-11-17
    • JP7996482
    • 1982-05-14
    • Hitachi Ltd
    • HIKITA MITSUTAKA
    • H03H9/145H03H3/08H03H9/02H03H9/68
    • H03H9/02574
    • PURPOSE:To obtain a surface acoustic wave band pass filter equipped with a wave dividing function and formed on a single substrate or a single chip, by providing plural piezoelectric thin films on the substrate. CONSTITUTION:Two layers of the piezoelectric thin films 16, 18 consisting of ZnO are formed on the substrate 19 through a thin metallic film 17 for short circuit. Transducers 13, 14 are formed on the upper surface of the piezoelectric thin film 16 and a transducer 15 is formed between the substrate 19 and the piezoelectric thin film 18. The transducers 13, 15 are connected to an antenna and the terminal of a transmitter respectively.
    • 目的:通过在基板上设置多个压电薄膜,获得具有分波功能的表面声波带通滤波器,形成在单个基板或单个芯片上。 构成:通过用于短路的金属薄膜17在基板19上形成由ZnO组成的两层压电薄膜16,18。 传感器13,14形成在压电薄膜16的上表面上,并且在基板19和压电薄膜18之间形成换能器15.换能器13,15分别连接到天线和发射器的端子 。
    • 9. 发明专利
    • SURFACE ACOUSTIC WAVE OSCILLATOR
    • JPH06177644A
    • 1994-06-24
    • JP35028192
    • 1992-12-02
    • MURATA MANUFACTURING CO
    • KATO AKIRA
    • H03B5/30H03B5/12H03B5/32H03B19/14H03B27/00H03H9/68
    • PURPOSE:To provide a surface acoustic wave oscillator by which a desired signal with small spurious radiation and a high frequency is obtained without the use of an expensive component such as a band pass filter. CONSTITUTION:A surface acoustic wave resonator 2 is formed by arranging two interdigital transducers 12,14 on a piezoelectric substrate 4 at positions causing a phase difference of pi-radian for a prescribed frequency f0. Circuit 24,26 are oscillated at the prescribed frequency f0 with cooperation of the interdigital transducers 12,14. Then outputs of the circuits 24,26 have a phase difference of pi-radian because the interdigital transducers 12,14 are arranged at positions causing a phase difference of m-radian. A computing element 28 multiplies two signals whose frequency is f0 and whose phase difference is pi-radian outputted from the oscillators 24,26 with each other to output a signal whose frequency is 2f0 being a multiple of two of the frequency f0. Thus, a desired signal with a high frequency and small spurious radiation is obtained inexpensively.