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1. 发明专利

JPH0722437A METHOD AND DEVICE FOR ELECTRIC CHARGE TRANSFER 失效
公开(公告)号：JPH0722437A
公开(公告)日：1995-01-24
申请号：JP15718093
申请日：1993-06-28
申请人： FUJI FILM MICRO DEVICE , FUJI PHOTO FILM CO LTD
发明人： HASEGAWA YASUMASA , MUTO HIDEKI
IPC分类号： H01L21/339 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/372 , H01L29/796
摘要： PURPOSE:To enlarge dynamic range, with a linearity in voltage-electric charge conversion characteristics maintained, by having the second storage area provided on the input side of an electric charge transfer means for accumulating the electric charge overflowing out of the first storage area, far transfer to the electric charge transfer means. CONSTITUTION:Among the electric charge quantity converted by voltage-electric charge conversion mechanism, no unnecessary electric charge is supplied to an electric charge transfer mechanism at a post stage, and only the electric charge quantity proportional to input voltage is supplied. In short, pulse IG2 canes into OFF state, and a part of electrons accumulated under a gate electrode 11 are returned to a channel area under a gate electrode 10. At the same time, pulse voltage H1 becomes high level and the electrons accumulated in the storage area under a gate electrode 12 are transferred to the storage area under a gate electrode 14 whose potential well is deeper. The electrons transferred to the storage area under the gate electrode 14 are, transferred in the direction A-A' are, whenever pulse voltages H1 and H2 became inverted, sequentially transferred toward right.

2. 发明专利

JPH073869B2 失效
公开(公告)号：JPH073869B2
公开(公告)日：1995-01-18
申请号：JP23025287
申请日：1987-09-14
IPC分类号： H01L27/146 , H01L21/339 , H01L27/14 , H01L27/148 , H04N5/33 , H01L29/796

3. 发明专利

JPH06338525A CHARGE TRANSFER DEVICE 失效
公开(公告)号：JPH06338525A
公开(公告)日：1994-12-06
申请号：JP14858593
申请日：1993-05-27
申请人： NEC CORP
发明人： MIWATA KAZUO
IPC分类号： H01L29/762 , H01L21/339 , H01L29/768 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/369 , H04N5/372 , H01L29/796
摘要： PURPOSE:To prevent prolongation of the instable period of output when source voltage is changed by a method wherein the potential of a reset drain is changed always following source voltage in a charge transfer device which is operated by a low voltage single power source. CONSTITUTION:A floating diffusion layer 20, a reset drain 21 and an absorption drain 22 are provided in the surface region of the semiconductor substrate on the latter stage of a charge transfer stage (an N-type diffusion layer 12, a transfer gate electrodes 14 and 15, and an output gate 16), a reset gate electrode 17 is provided on the semiconductor substrate located between the diffusion layer 20 and the drain 21, a barrier gate electrode 18 is provided on the semiconductor substrate located between the drain 21 and the drain 22, and a resistor R11 for electron clock phiR, having H-level of 5V and L-level of 0V is applied to the electrode 17, source voltage VB (5V) is applied to the electrode 18, and output voltage (12V) of voltage boosting circuit is applied to the drain 22.

4. 发明专利

JPH0687481B2 失效
公开(公告)号：JPH0687481B2
公开(公告)日：1994-11-02
申请号：JP27684086
申请日：1986-11-21
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/339 , H01L21/76 , H01L29/76 , H01L29/762 , H01L29/796

5. 发明专利

JPH06275659A CHARGE TRANSFER ELEMENT 失效
公开(公告)号：JPH06275659A
公开(公告)日：1994-09-30
申请号：JP8805093
申请日：1993-03-23
申请人： SONY CORP
发明人： HIRAMA MASAHIDE
IPC分类号： H01L29/762 , H01L21/339 , H01L29/796
摘要： PURPOSE:To prevent a difference from being generated between the charge and voltage conversion ratios of a plurality of charge and voltage conversion parts even if a matching deviation is generated between floating diffusions and masks for lead-out electrode formation by a method wherein the charge and voltage conversion parts of a plurality of charge-transfer parts are formed in such a way as to have patterns moved in parallel to each other. CONSTITUTION:In a charge transfer element, charge transfer parts 3e and 3q are not made axially symmetric to each other with a center line 7 as the center, but are formed in patterns moved in parallel to each other in the direction rectangular to the center line 7. Thereby, even if lead-out electrodes 6e and 6q are shifted on the side lower than a reference position to floating diffusions 5e and 5q, the opposed area of the electrode 6e to the diffusion 5e and the opposed area of the electrode 6q to the diffusion 5q are both smaller than a reference value. As a result, no difference is generated between the opposed areas.

6. 发明专利

JPH06260629A SOLID-STATE IMAGE PICKUP ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH06260629A
公开(公告)日：1994-09-16
申请号：JP4357193
申请日：1993-03-04
申请人： SHARP KK
发明人： KAMATA MASATAKA
IPC分类号： H01L27/148 , H01L21/339 , H01L29/762 , H04N5/335 , H04N5/359 , H04N5/365 , H04N5/369 , H04N5/3728 , H01L29/796
摘要： PURPOSE:To reduce the dispersion of smear under wafer surface and the sensitivity by providing a sidewall consisting of a shading material at the side of a charge transfer electrode. CONSTITUTION:An n-type silicon substrate 1 is provided with the first p-layer 2 and a charge transfer part 5, and a charge transfer electrode 7 and photo-electric conversion part 9 are formed to cover the charge transfer part 5, and after accumulation of a tungsten silicide film 10, the whole face is etched to provide a sidewall at the side of the charge transfer electrode 7, and it is used as the first shading film 11, and through an insulating film 12, a second shading film 13 and a third shading film 14 are provided on the charge transfer electrode 7. Hereby, the dimension of the shading film at the side of the charge transfer electrode becomes constant, and the area of the aperture of the photo-electric conversion part becomes constant, so the smear under wafer surface and the dispersion of sensitivity can be reduced.

7. 发明专利

JPH06252180A CHARGE TRANSFER DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH06252180A
公开(公告)日：1994-09-09
申请号：JP3708693
申请日：1993-02-25
申请人： SHARP KK
发明人： NAGAGAWA CHIYUUJI , HASHIGUCHI KAZUO
IPC分类号： H01L29/762 , H01L21/339 , H01L29/768 , H01L29/78 , H01L29/786 , H01L29/784 , H01L29/796
摘要： PURPOSE:To provide a charge transfer device, which allows reduction of a charge detecting capacity and improvement of the charge/voltage conversion factor and deals with the recent technical trends which request for fine pixel and the downsizing of a device, and provide its manufacture. CONSTITUTION:A first diffused layer P 2 and second diffused layers P 3 and 3 are formed on the surface layer of an N-type silicon substrate 1. A LOCOS oxide film 4 for element isolation is formed on the second diffused layers P 3 and 3, a floating diffused layer N 5 which is to charge detecting part is formed on the surface layer of the first diffused layer P 2 between the second diffused layers P 3 and 3 and the floating diffused layer N 5 is superimposed with gate electrode material 6. A gate insulating film 7 is sandwiched so as to position a channel area 11 above the gate electrode material 6 and a TFT 10 is formed.

8. 发明专利

JPH06244220A CHARGE TRANSFER DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06244220A
公开(公告)日：1994-09-02
申请号：JP3095393
申请日：1993-02-19
申请人： OKI ELECTRIC IND CO LTD
发明人： MURAKAMI NORIO
IPC分类号： H01L29/762 , H01L21/339 , H01L29/796
摘要： PURPOSE:To obtain a CCD having low gate electrode resistance by providing a conductive side wall on the side wall of a gate electrode. CONSTITUTION:This CCD is provided with an N-type buried layer 42 which is formed on a P-type substrate 40, and a plurality of polysilicon gate electrodes 48 are provided on the above-mentioned buried layer 42 through the intermediary of an SiO2 gate insulating film 46. A polysilicon conductive side wall 50 is provided on the side wall of each gate electrode 48. As the side wall is conductive, the resistance value of the gate electrode can be made lower by about 10% than the case where an insulating side wall is provided. As a result, the working speed of an element can be increased by about 10%.

9. 发明专利

JPH06224228A PREPARING TWO-PHASE BURRIED CHANNEL PLANER GATE CCD 失效
公开(公告)号：JPH06224228A
公开(公告)日：1994-08-12
申请号：JP31561493
申请日：1993-12-15
申请人： EASTMAN KODAK CO
发明人： ERITSUKU JII SUTEIIBUNSU , SUTEIIBUN ERU KOSUMAN
IPC分类号： H01L29/762 , H01L21/339 , H01L29/768 , H01L29/796
摘要： PURPOSE: To obtain a submicron gap between gate electrodes by removing a second masking layer for exposing one part of a conductive layer between a first masking layer part and an adjacent third masking layer, and removing the exposed part of the conductive layer for dividing the conductive layer into gate electrodes having a gap. CONSTITUTION: The etching of the part of a conductive layer 20 exposed by a gap 46 is carried out down to an insulating layer 18 by using anisotropic etching. Thus, a groove 48 penetrating the conductive layer 20 for dividing the conductive layer 20 into each gate electrode 50 is formed. Each gate electrode 50 is isolated by the groove 48 being a submicron gap. Each gate electrode 50 is arranged, so that the edge part can be positioned on a barrier region 32. First and sixth masking layers 22 and 24 are removed by a proper etching agent, so that a CCD 10 can be completed. The one alternate gate electrode 50 is connected with a first potential source, and the other alternate gate electrode is connected with a second potential source so that a two-phase CCD 10 can be formed.

10. 发明专利

JPH06216363A SOLID-STATE IMAGING DEVICE 失效
公开(公告)号：JPH06216363A
公开(公告)日：1994-08-05
申请号：JP371093
申请日：1993-01-13
申请人： NEC CORP
发明人： MIWATA KAZUO
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H01L29/796
摘要： PURPOSE:To reduce irregularity of afterglow amount and its absolute amount, in a solid-state imaging device. CONSTITUTION:In a solid-state imaging device wherein a photoelectric conversion part 12, a charge storage part 13, a transfer gate part 14, and a CCD register part are all formed in the same N-type region, P-type impurity ion implantation for channel potential control of the transfer gate part is performed in a self-alignment manner using the charge storage part and the gate electrode of a CCD register gate part as masks. Thereby generation of unnecessary potential wells and barriers is prevented.

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