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    • 2. 发明专利
    • VACUUM ELEMENT
    • JPH06283779A
    • 1994-10-07
    • JP7140493
    • 1993-03-30
    • NEC CORP
    • YAMADA KEIZO
    • H01L49/00H01J21/06H01J21/10H01J21/18H01S3/30
    • PURPOSE:To provide a vacuum element which is provided with a high mobility wiring function and a high speed active function and which functions as an wiring, operation, amplifying or oscillating element in place of metal wiring and transistors conventionally used in VLSIs. CONSTITUTION:The title vacuum element consists of a vacuum region 3 so constituted that at least one of surfaces surrounding its space is an insulator; one or more electron emitting sources 5 which emit electrons into the vacuum region 3; and a metal thin film 1 which is formed in contact with the insulator thin film(s) 2 composing the insulating surface(s) of the vacuum region 3, and which controls the spatial positions and traveling baths of electrons emitted from the electron emitting sources 5 by controlling the surface potential of the insulator thin film(s) on the vacuum region 3 side according to externally applied bias voltage.
    • 7. 发明专利
    • MULTI-POLAR ELECTRON TUBE
    • JPH1064436A
    • 1998-03-06
    • JP21712696
    • 1996-08-19
    • TOSHIBA CORP
    • GONBEI KATSUHIRO
    • H01J19/44H01J21/18
    • PROBLEM TO BE SOLVED: To restrict the charging and secondary electron emission of a coated tube, and to reduce the initial failure such as the generation of racks and melting by providing an insulating coasted tube, which is provided with a conductive layer in a surface thereof, between a cathode and a control electrode. SOLUTION: An anode 13 is positioned to surround a gate electrode 12, which is positioned on both sides of a cathode 11, and an alumina-coated tube support 17 is arranged between the cathode 11 and the gate electrode 12 at both an upper and a lower ends, and the cathode 11 and the gate electrode 12 are supported so that they do not contact each other. A cylindrical alumina- coated tube 18, which is provided with a conductive layer at 50-100Å thickness, is covered on the cathode 11 with which the support 17 contacts, so as to insulate between the cathode 11 and the gate electrode 12.