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    • 6. 发明专利
    • JPS5018471B1
    • 1975-06-28
    • JP4133970
    • 1970-05-16
    • C30B25/10C30B35/00E06B5/02H01L21/205B01J17/32
    • 1298006 Depositing semi-conductor materials SIEMENS AG 15 May 1970 [19 May 1969] 23568/70 Heading C1A [Also in Divisions F4 H1 and H5] Apparatus for depositing semi-conductor material epitaxially on a heated substrate comprises a cylindrical reaction vessel 1 of, e.g. quartz containing a conductive, e.g. silicated graphite carrier 2 for substrate wafers of, e.g., silicon or silicon carbide, and surrounded by H.F. induction heating coil 3 by which the wafers are heated to deposition temperature. The outer wall of the vessel carries a thin reflective coating 5 for radiant heat, of, e.g. silver with a protective coating 6 of e.g. quartz or glass. The surface of the vessel may be cooled by e.g. water circulating through a double wall. Connections for known reaction gas 1a, 1b are fitted to the vessel at ground faces 1c, 1d and the carrier may be hollow and evacuated or filled with air or low conductivity material, or alternatively have a thin conductor surrounding an insulant core. The reflecting and protecting layers 5, 6 may be formed on an outer detachable cylindrical casing, and the coating may be formed with inspection windows.