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1. 发明专利

JP3440591B2 失效
公开(公告)号：JP3440591B2
公开(公告)日：2003-08-25
申请号：JP31406694
申请日：1994-11-24
IPC分类号： C01B31/02 , B28B21/42 , D01F9/127

2. 发明专利

JP2001214267A METHOD FOR PRODUCING HIGH PURITY SILICON CARBIDE TUBE 失效
公开(公告)号：JP2001214267A
公开(公告)日：2001-08-07
申请号：JP2000021252
申请日：2000-01-31
申请人： TOKAI CARBON KK
发明人： SUGIHARA TAKAOMI
IPC分类号： B28B21/42 , C23C16/01 , C23C16/32
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a high purity silicon carbide tube having high purity, excellent in denseness corrosion resistance, strength characteristics or the like and suitably usable as various members for a heat treating apparatus such as a liner tube and a process tube used for a diffusion furnace for semiconductor fabrication. SOLUTION: In the method for producing a silicon carbide tube in which a gaseous starting material is introduced into a cylinder of a graphite base material, an SiC film is deposited on the inner face of the cylindrical graphite base material by a CVD reaction, and, after that, the graphite base material is remover, a gaseous starting material passage between a gaseous starting material introducing tube and a gas exhaust tube is provided with a baffle in its inside, and a CVD reaction is performed while the baffle is being moved in the circulating direction of the gaseous starting material. Preferably, the gap between the inner face of the cylindrical graphite base material and the baffle is set to 3 to times the thickness of the SiC film to be deposited.

3. 发明专利

JPH07144318A MANUFACTURE OF SILICON TUBE BY VAPOR PHASE REACTION 失效
公开(公告)号：JPH07144318A
公开(公告)日：1995-06-06
申请号：JP31602193
申请日：1993-11-22
申请人： SUMITOMO SITIX CORP
发明人： MATSUMOTO TADASHI , KUWABARA SHOHEI
IPC分类号： C04B41/85 , B28B21/42 , C23C16/24 , C30B29/06 , C30B31/14 , H01L21/22 , H01L21/67 , H01L21/68
摘要： PURPOSE:To prevent the cracking on a silicon deposit body from being caused by depositing silicon in the film shape on the surface of a base, discontinuing the feeding of raw material gas temporarily while heating of the base is continued, and reopening the raw material gas feeding and depositing the silicon on the surface of the base temporarily by a specific thickness. CONSTITUTION:When a silicon deposition body 2 is formed on the surface of a base 1 by vapor phase reaction, first a primary deposit film 2a is formed. Then a two-stage deposition, in which raw material gas supply is discontinued temporarily, and then the feed of raw material gas is reopened to form a secondary deposit body 2b over the primary deposit film 2a, is carried out. The occurrence of cracking on the silicon deposit body 2 in the cooling process is prevented by the arrangement. Also a boundary face making a problem is not formed between the primary deposit film 2a and the secondary deposit body 2b, and the primary deposit film 2a can also be used as a product together with the secondary deposit body 2b.

4. 发明专利

JPH06182748A HARD TUBULAR MEMBER, ITS PRODUCTION, AND MANDREL USED FOR PRODUCING HARD TUBULAR MEMBER 失效
公开(公告)号：JPH06182748A
公开(公告)日：1994-07-05
申请号：JP32060392
申请日：1992-11-30
申请人： MINNESOTA MINING & MFG
发明人： MIHAIRU REIDAAMAN
IPC分类号： B28B21/42 , B28B21/86 , B28B21/90 , B29C33/48 , B29C53/82 , B29D23/00 , C04B41/87
摘要： PURPOSE: To provide a rigid tubular member having a straight line part and a bow-shaped part, a method for producing the member, and a reusable mandrel to be used in the production of the member. CONSTITUTION: A mandrel 18 has a U-shaped rod made by combining a straight rod 46 and a bow-shaped rod 48, bow-shaped mold materials which are arranged freely slidably/movably on the rods 46, 48 and to be used by being sequentially combined, and a pair of straight line mold materials 24, 25. Screws 52 are formed at both ends of the straight line rod 46, and after these mold materials 24, 25, 26 being arranged at prescribed positions, all the mold materials are clamped by nuts 33. When a rigid tubular member is formed on the mandrel 18, by disconnecting the mold materials 24, 25, 26, the mandrel 18 can be removed completely from the inside of the tubular member.

5. 发明专利

JPH0428768B2 失效
公开(公告)号：JPH0428768B2
公开(公告)日：1992-05-15
申请号：JP18441487
申请日：1987-07-23
申请人： HONDA MOTOR CO LTD
发明人： MURATA KANJI , TARUNO YASUKI , SUENAGA TAKAHIRO , KARASAWA HITOSHI
IPC分类号： B22D19/14 , B28B1/52 , B28B21/42 , C22C47/00 , C22C47/02 , C22C47/06 , C22C47/08 , D21J5/00

6. 发明专利

JPH0234295B2 失效
公开(公告)号：JPH0234295B2
公开(公告)日：1990-08-02
申请号：JP1540385
申请日：1985-01-31
申请人： SHOWA DENKO KK
发明人： WATANABE TETSUAKI , NAKAJO HITOSHI , KAMIMURA OSAMU , YAMAMOTO SADAO
IPC分类号： B28B21/42 , B28B21/48 , B28B21/56 , B28B21/72

7. 发明专利

JPH026315A APPARATUS FOR MANUFACTURING A TUBE OF A SEMICONDUCTOR MATERIAL 失效
公开(公告)号：JPH026315A
公开(公告)日：1990-01-10
申请号：JP19875788
申请日：1988-08-09
申请人： SIEMENS AG
发明人： URADEIMIIRU KURARIKU , HANSU KESUBOORAA
IPC分类号： B28B21/42 , C01B33/03 , C23C16/01 , C23C16/46 , H01L21/205

8. 发明专利

JPS6451910A SLURRY MOLDING METHOD OF THIN MEMBER 失效
公开(公告)号：JPS6451910A
公开(公告)日：1989-02-28
申请号：JP20847687
申请日：1987-08-21
申请人： TOYOTA MOTOR CORP
发明人： HASE TEIZO
IPC分类号： B28B21/42 , B28B21/86
摘要： PURPOSE:To manufacture a ceramic thin member free from a defect by enabling molding of the thin member, by sticking slurry to a core material by making use of a material having shrink or disappear properties as the core material. CONSTITUTION:Slurry 20 stuck to a core material 4 is held as a molded body 22 in a form stuck to the core material 14 through dryness. The core material 14 is caused to shrink or disappear with a solvent and the ceramic molded body 22 is obtained under that condition. As the molded body 22 is obtained through adhesion of the slurry 20 to the core material 14 and the core material 14 is removed through the solvent, damage of the molded body 22 at the time of demolding is not generated. As the title method is of the molding formed by making use of the slurry 20, it is hard to generate a defect at the time of use of a kneaded matter of resin and a ceramic material.

9. 实用新型

JPS6328145U 失效
公开(公告)号：JPS6328145U
公开(公告)日：1988-02-24
申请号：JP12056886
申请日：1986-08-06
IPC分类号： B05B1/00 , B05B7/14 , B26F3/00 , B28B21/42 , C23C16/32 , C23C16/34

10. 发明专利

JPS62132798A CRUCIBLE FOR GROWING COMPOUND SEMICONDUCTOR AND PRODUCTION THEREOF 失效
公开(公告)号：JPS62132798A
公开(公告)日：1987-06-16
申请号：JP27063385
申请日：1985-12-03
申请人： DENKI KAGAKU KOGYO KK
发明人： KAWASAKI TAKU , NOMURA KENJI , TANJI HIROAKI
IPC分类号： B28B21/42 , C01B21/064 , C01B21/068 , C04B35/58 , C04B35/583 , C23C16/01 , C30B15/10 , C30B27/02 , H01L21/18
摘要： PURPOSE:Pyrolytic BN is chemically vacuum-deposited on the surface of the graphite core to produce the titled crucible of high purity with high corrosion resistance and thermal stability. CONSTITUTION:The reaction chamber in which a graphite core is hung is placed in a resistor heater-type of a vacuum oven and the oven is evacuated down to about 10 Torr, then heated up over 1,900 deg.C. Then, BCl3 and NH3 which are diluted with a nitrogen gas are introduced into the reaction chamber of less than 20Torr to effect chemical deposition of pyrolytic BN in a certain thickness on the core surface. Thus, a crucible for growing a compound semiconductor having less than 6.80Angstrom lattice constant around the C axis in the BN crystal and less than 0.5mum of minimum diameter of the semispheres on the [(001)] cleavage face.

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