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1. 发明专利

JP2013537514A Eddy current type thickness measuring device 有权
公开(公告)号：JP2013537514A
公开(公告)日：2013-10-03
申请号：JP2013525915
申请日：2011-07-18
申请人：ヴァリアンセミコンダクターイクイップメントアソシエイツインコーポレイテッド
发明人：ジェイローゼンギャリー , シンクレアフランク , ソスコフアレクサンダー , エスバフジェイムズ
IPC分类号： C30B29/06 , C01B33/02 , C30B15/06 , G01B7/06
CPC分类号： C30B11/00 , B22D11/1206 , B22D11/143 , C30B15/00 , C30B29/06 , C30B29/08 , C30B29/36 , C30B29/406 , C30B29/64 , C30B35/00 , G01B7/105 , G01B7/107 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1044 , Y10T117/1048 , Y10T117/1068 , Y10T117/1088
摘要： A sheet of a material is disposed in a melt of the material. The sheet is formed using a cooling plate in one instance. An exciting coil and sensing coil are positioned downstream of the cooling plate. The exciting coil and sensing coil use eddy currents to determine a thickness of the solid sheet on top of the melt.

2. 发明专利

JP5049590B2 Method of manufacturing a silicon carbide (SiC) single crystal 有权
公开(公告)号：JP5049590B2
公开(公告)日：2012-10-17
申请号：JP2006521031
申请日：2005-12-26
申请人：パナソニック株式会社 , 国立大学法人大阪大学
发明人：孝友佐々木 , 康夫北岡 , 実川原 , 史朗川村 , 勇介森
IPC分类号： C30B29/36 , C30B9/10
CPC分类号： C30B29/36 , C30B9/00 , C30B9/10 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088

3. 发明专利

JP5039696B2 Method and apparatus for refining the molten material 有权
公开(公告)号：JP5039696B2
公开(公告)日：2012-10-03
申请号：JP2008515642
申请日：2006-05-10
申请人：エルケムソウラーアクシエセルスカプ
发明人：フリエスタッド，ケンネス
IPC分类号： B22D23/04 , B22D23/00 , B22D27/04 , C01B20060101 , C01B33/037
CPC分类号： C30B29/06 , C30B11/003 , Y10T117/10 , Y10T117/1024 , Y10T117/1032 , Y10T117/1036 , Y10T117/1044 , Y10T117/1068 , Y10T117/1072 , Y10T117/108 , Y10T117/1088

4. 发明专利

JP2011258973A METHOD OF PRODUCING SILICON WAFER INCLUDING Ar/NH3 RAPID THERMAL ANNEALING STEP 有权
标题翻译：生产包含Ar / NH3快速热退火步骤的硅膜的方法
公开(公告)号：JP2011258973A
公开(公告)日：2011-12-22
申请号：JP2011175797
申请日：2011-08-11
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： PARK JAE-GUN
IPC分类号： C30B15/20 , H01L21/322 , C30B15/00 , C30B15/14 , C30B29/06 , C30B33/00 , H01L21/20 , H01L21/26 , H01L21/324
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , C30B33/00 , H01L21/3225 , Y10S117/911 , Y10T117/1004 , Y10T117/1008 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088 , Y10T428/12458 , Y10T428/12528 , Y10T428/21
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a silicon wafer including Ar/NHrapid thermal annealing step.SOLUTION: A DZ at a sufficient depth from the surface to the inside of a wafer is combined with high gettering effect in the bulk region of the wafer. In a silicon wafer, an oxygen precipitate serving as an intrinsic gettering location shows vertical distribution. Oxygen precipitate concentration profile from the upper surface to the lower surface of the wafer comprises: first and second peaks at predetermined first and second depths from the upper and lower surfaces of the wafer; DZ of the upper and lower surfaces of the wafer and the first and second peaks; and a concave region between the first and second peaks corresponding to the bulk region of the wafer. With such an oxygen precipitate concentration profile, the wafer is provided to a rapid thermal annealing step of about 1200°C or below in a gas mixture atmosphere containing NHand Ar.
摘要翻译：要解决的问题：提供一种包括Ar / NH 3 快速热退火步骤的硅晶片的制造方法。解决方案：在晶片的表面到内部的足够深度处的DZ与晶片的主体区域中具有高吸气效应相结合。在硅晶片中，作为固有吸气位置的氧沉淀显示垂直分布。从晶片的上表面到下表面的氧析出物浓度分布包括：从晶片的上表面和下表面预定的第一和第二深度处的第一和第二峰; 晶片的上表面和下表面的DZ和第一和第二峰; 以及对应于晶片的主体区域的第一和第二峰值之间的凹入区域。通过这样的氧沉淀浓度分布，将晶片提供到在含有NH 3 SB 3 = SB 3和/或SB 3的气体混合气氛中的约1200℃或更低的快速热退火步骤。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2009522201A Apparatus and method for producing a block of crystalline material 审中-公开
公开(公告)号：JP2009522201A
公开(公告)日：2009-06-11
申请号：JP2008549034
申请日：2006-12-06
申请人：アポロン、ソーラーApollon Solar , ウエフデ、アンデュクスィオン、ソシエテ、アノニムEfd Induction Sa , サイバースターCyberstar
发明人：パスカル、リバ , フランソワ、リサルド , ローラント、アインハウス
IPC分类号： C30B28/06 , C01B33/02
CPC分类号： C30B11/003 , C30B11/002 , Y10T117/10 , Y10T117/102 , Y10T117/1024 , Y10T117/1068 , Y10T117/1088
摘要： A device for producing a block of crystalline material comprises a heat source (3) and a cooling system arranged to establish a thermal gradient in a crystallization crucible (1), silica plates arranged around an induction turn (10), and a removable felt arranged above the exchanger. The system comprises an exchanger (17), an adjustable source, an induction turn, and an electrically conducting induction susceptor (11) placed between the crucible and the induction turn. The induction turn is cooled by a coolant circulating within the induction turn. The device for producing block of crystalline material, comprises a heat source (3) and a cooling system arranged to establish thermal gradient in a crystallization crucible (1), silica plates arranged around an induction turn (10), and a removable felt arranged above the exchanger. The system comprises an exchanger (17), an adjustable source, an induction turn, and an electrically conducting induction susceptor (11) placed between the crucible and the induction turn. The induction turn is cooled by a coolant circulating within the induction turn. The susceptor is arranged in a thermally conducting material and an infra-red radiation absorbent in which the susceptor is made of graphite or silicon carbide. The susceptor comprises a support for the crucible, and low electric surface conductivity zones to reduce the heating of induction and to enhance the dissipation of heat of the crucible towards the induction turn. The low electric surface conductivity zones are consisted by holes, a material having a low electric conductivity than the susceptor material or a zone having a lower thickness than the susceptor. The crucible comprises a transparent bottom of amorphous silica without impurities. An independent claim is included for the production of a block of crystalline material.

6. 发明专利

JP2008135773A Heat treatment method for silicon wafer, and silicon wafer processed using the same 有权
标题翻译：用于硅砂的热处理方法和使用其的硅加工方法
公开(公告)号：JP2008135773A
公开(公告)日：2008-06-12
申请号：JP2008005928
申请日：2008-01-15
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： HOELZL ROBERT , SEURING CHRISTOPH , WAHLICH REINHOLD , VON AMMON WILFRIED
IPC分类号： H01L21/322 , C30B33/00 , H01L21/26 , H01L21/324
CPC分类号： C30B29/06 , C30B33/00 , H01L21/3225 , H01L21/324 , Y10T117/1088
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment method for a silicon wafer which is carried out economically, in which the silicon wafer will not further contain COPs, only in a region near the surface, but will not contain COPs through the main portions of wafer thickness, and to provide the silicon wafer obtained by the method. SOLUTION: In this manufacturing method, the silicon wafer is at least temporarily exposed to an oxygen-containing atmosphere, during which the heat treatment is carried out, at a temperature which is selected so that the Inequality (1) is satisfied, where [Oi] is the concentration of oxygen in the silicon wafer, [Oi] eq (T) is the limit solubility of oxygen in silicon at a temperature T, σ SiO2 is the surface energy of silicon dioxide, Ω is the volume of precipitated oxygen atom, r is the mean COP radius and k is the Boltzmann's constant. The silicon wafer has a density of nucleation centers for the oxygen precipitation of at least 10 7 cm -3 in its bulk, and has a zone that does not contain nucleation centers, having a thickness of at least 1 μm on the wafer front surface, and COPs density that is smaller than 10,000 cm -3 , down to a depth corresponding to at least 50% of the wafer thickness. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供经济地进行的硅晶片的热处理方法，其中硅晶片不再进一步包含COP，仅在靠近表面的区域中，而不会含有COP 晶片厚度的主要部分，并提供通过该方法获得的硅晶片。解决方案：在该制造方法中，硅晶片至少暂时暴露于在选择为满足不等式（1）的温度下进行热处理的含氧气氛中，其中[Oi]是硅晶片中氧的浓度，其中，在温度T下，氧在硅中的极限溶解度，σ 是二氧化硅的表面能，Ω是沉淀氧原子的体积，r是平均COP半径，k是玻尔兹曼常数。硅晶片的体积中的氧沉淀的成核中心的密度为至少10个/秒，具有不含成核中心的区域，在晶片前表面上具有至少1μm的厚度，以及小于10,000cm -3 的COP密度，至少相当于晶片厚度的50％的深度。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2007182373A Method for producing high quality silicon single crystal and silicon single crystal wafer made by using the same 审中-公开
标题翻译：生产高品质硅单晶和硅单晶水晶的方法
公开(公告)号：JP2007182373A
公开(公告)日：2007-07-19
申请号：JP2006346581
申请日：2006-12-22
申请人： Siltron Inc , シルトロンインク
发明人： CHO HYON-JONG
IPC分类号： C30B29/06 , C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a high quality silicon single crystal which can be suitably used for producing a non-defect and high quality single crystal ingot by a high growth rate, and to provide a silicon single crystal wafer produced using the same. SOLUTION: In the method for producing a high quality single crystal by a Czochralski method, a lower portion of a solid-liquid interface of single crystal growth is divided into a central part and a circumferential part, and the temperature gradient of the central part and the temperature gradient of the circumferential part are separately controlled. Thereby, when the silicon melt located at a lower portion of the solid-liquid interface is divided into a central part and a circumferential part, the temperature gradient of the central part is directly controlled by controlling the temperature distribution of the melt and the temperature gradient of the circumferential part is indirectly controlled by controlling the temperature gradient of the single crystal, and thereby the temperature distribution of the melt can be effectively controlled. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：待解决的问题：提供一种高品质硅单晶的制造方法，其可以适用于以高生长速度生产非缺陷和高质量的单晶锭，并提供硅单晶使用其制造的晶片。解决方案：在通过切克劳斯基法生产高质量单晶的方法中，单晶生长的固液界面的下部被分成中心部分和周边部分，并且温度梯度中心部分和周向部分的温度梯度被单独控制。因此，当位于固液界面下部的硅熔体被分成中心部分和周边部分时，通过控制熔体的温度分布和温度梯度来直接控制中心部分的温度梯度通过控制单晶的温度梯度间接地控制圆周部分，从而可以有效地控制熔体的温度分布。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2007084417A Apparatus for growing high quality silicon single crystal ingot and growing method using the apparatus 有权
标题翻译：用于生产高质量硅单晶的装置和使用装置的生长方法
公开(公告)号：JP2007084417A
公开(公告)日：2007-04-05
申请号：JP2006025025
申请日：2006-02-01
申请人： Siltron Inc , シルトロンインク
发明人： CHO HYON-JONG
IPC分类号： C30B29/06 , C30B15/14
CPC分类号： C30B29/06 , C30B15/14 , C30B35/00 , Y10S117/917 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for growing a high quality silicon single crystal ingot where the high quality silicon single crystal ingot in which growing defects are extremely controlled to such a degree that defects are not caused in actual device manufacturing can be manufactured with high productivity while so controlling as for ingot to have various oxygen concentrations, to provide a growing method using the apparatus and to provide a silicon single crystal ingot and a wafer produced by the method. SOLUTION: A silicon single crystal is grown by a Czochralski method using an apparatus for growing the silicon single crystal, which comprises a chamber, a crucible provided in the chamber to receive a silicon molten liquid, a heater being provided beside the crucible for heating the silicon molten liquid and having a maximum exothermic section existing at a specified position in the crucible and a pulling mechanism to pull the growing silicon single crystal from the silicon molten liquid. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于生长高品质硅单晶锭的装置，其中生长缺陷被极度地控制到在实际器件制造中不引起缺陷的程度的高质量硅单晶锭以高生产率制造，同时控制锭具有各种氧浓度，以提供使用该装置的生长方法，并提供通过该方法制造的硅单晶锭和晶片。解决方案：使用用于生长硅单晶的装置，通过切克劳斯基法（Czochralski method）生长硅单晶，其包括室，设置在室中的坩埚以接收硅熔融液体，在坩埚旁边设置加热器用于加热硅熔融液体并且具有存在于坩埚中的特定位置处的最大放热部分以及从硅熔融液体拉出生长的硅单晶的拉动机构。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2007031260A Method and apparatus for growing high quality silicon single crystal ingot, silicon single crystal ingot grown thereby and wafer produced from the single crystal ingot 有权
标题翻译：用于生产高质量硅单晶的方法和装置，由单晶晶体生成的硅单晶晶体和晶体
公开(公告)号：JP2007031260A
公开(公告)日：2007-02-08
申请号：JP2006025029
申请日：2006-02-01
申请人： Siltron Inc , シルトロンインク
发明人： CHO HYON-JONG
IPC分类号： C30B29/06 , C30B15/00
CPC分类号： C30B15/30 , C30B29/06 , C30B30/04 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a silicon single crystal ingot by a Czochralski method, by which a high quality silicon single crystal ingot can be produced with high productivity. SOLUTION: The silicon single crystal ingot having a desired oxygen concentration and suppressed in defects is produced by independently controlling the temperature distribution and the oxygen concentration distribution of a silicon melt by applying an unbalanced magnetic field to the silicon melt so that the magnetic field intensity of an oxygen gushing region is different from that of a solid-liquid interface region. COPYRIGHT: (C)2007,JPO&INPIT

10. 发明专利

JP3849639B2 Manufacturing apparatus and method for producing a silicon semiconductor single crystal 有权
公开(公告)号：JP3849639B2
公开(公告)日：2006-11-22
申请号：JP2002539596
申请日：2001-10-26
申请人：信越半導体株式会社
发明人：哲也五十嵐 , 友彦太田 , 祐一宮原 , 泉布施川 , 亮二星 , 隆弘柳町
IPC分类号： C30B29/06 , C30B15/00 , C30B15/14
CPC分类号： C30B15/14 , C30B15/206 , C30B29/06 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088

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