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1. 发明专利

JP2018093332A 駆動装置审中-公开
公开(公告)号：JP2018093332A
公开(公告)日：2018-06-14
申请号：JP2016234094
申请日：2016-12-01
申请人：株式会社デンソー
发明人：川本輝
IPC分类号： H02M1/00 , H02M1/08 , H02J7/00 , H03K17/00 , H03K17/08
CPC分类号： H02J7/00 , H02M1/00 , H02M1/08 , H03K17/00 , H03K17/08
摘要：【課題】電源の逆接時に流れる電流を確実に遮断する。【解決手段】駆動装置1は、直流電源2から負荷3へと至る電源供給経路に直列に介在するものであり且つ互いの寄生ダイオードが逆向きとなるように接続されたトランジスタQ1およびQ2の駆動を制御する。駆動装置1は、駆動部5および逆接保護制御部6を備える。駆動部5は、直流電源2の高電位側端子に接続される電源線L1および直流電源2の低電位側端子に接続される電源線L2を介して電源供給を受けて動作するものであり、トランジスタQ1、Q2を駆動する。逆接保護制御部6は、電源線L1、L2の電位関係が正常の関係とは逆転した関係になると、駆動部5による駆動に関係なくトランジスタQ2を強制的にオフ駆動して電源供給経路に流れる電流を遮断する保護動作を実行する。【選択図】図1

2. 发明专利

JPWO2017057682A1 駆動装置审中-公开
公开(公告)号：JPWO2017057682A1
公开(公告)日：2018-04-19
申请号：JP2017543617
申请日：2016-09-30
申请人：アイシン・エィ・ダブリュ株式会社
发明人：山下賢人 , 川崎純一
IPC分类号： H03K17/00 , H02H3/00 , H03K17/08 , H03K17/695
CPC分类号： B60R16/02 , H02H3/00 , H03K17/00 , H03K17/08
摘要：駆動装置(9)は、リニアソレノイドバルブ(SL1〜SL5)の一端部(5a)のそれぞれにコネクタ(Co)及び配線(Ha)を介して駆動信号を入力することでリニアソレノイドバルブ(SL1〜SL5)を駆動制御する。リニアソレノイドバルブ(SL1〜SL5)の他端部(5b)のそれぞれには配線(56)が接続され、配線(56)はまとめて共通配線(57)に共通化されてコネクタ(Co)に接続される。コネクタ(Co)のグランド端子gtの数を減らすことが可能となり、コネクタ(Co)の小型化が可能となる。

3. 发明专利

JPWO2017119090A1 バッファ回路及び半導体装置审中-公开
公开(公告)号：JPWO2017119090A1
公开(公告)日：2018-03-08
申请号：JP2017559983
申请日：2016-01-07
申请人：三菱電機株式会社
发明人：吉田健太郎
IPC分类号： H03K17/56 , H02M1/08
CPC分类号： H02M1/08 , H03K17/00 , H03K17/567
摘要：コンプリメンタリSEPP回路を安定して動作可能な技術を提供することを目的とする。コンプリメンタリSEPP回路をなすNPNトランジスタQ1及びPNPトランジスタQ2と、第1抵抗及び第2抵抗と、一端が半導体スイッチング素子3のゲートと接続され、他端がNPNトランジスタQ1のベースと接続された第1負荷素子と、一端が半導体スイッチング素子3のゲートと接続され、他端がPNPトランジスタQ2のベースと接続された第2負荷素子とを備える。

4. 发明专利

JP5619687B2 半導体素子駆動装置及び方法有权
标题翻译：该半导体元件驱动装置和方法
公开(公告)号：JP5619687B2
公开(公告)日：2014-11-05
申请号：JP2011149439
申请日：2011-07-05
申请人：本田技研工業株式会社
发明人：五月女　耕二 , 耕二五月女 , 勝太久保 , 勝太久保
IPC分类号： H03K17/00
CPC分类号： H03K17/00

5. 发明专利

JP5596004B2 Semiconductor switches and power conversion equipment 有权
公开(公告)号：JP5596004B2
公开(公告)日：2014-09-24
申请号：JP2011260321
申请日：2011-11-29
申请人：株式会社東芝
发明人：宏餅川 , 淳彦葛巻 , 純一津田 , 裕史児山
IPC分类号： H02M7/5387 , H02M1/08
CPC分类号： H02H3/18 , G05F3/02 , H01H47/00 , H03K17/00 , H03K17/567 , H03K17/687 , Y10T307/74
摘要： According to one embodiment, a switch includes a first element (1) with a first withstand voltage having, a second element (3) whose withstand voltage is lower than the first withstand voltage, a diode (4) which is connected between a positive electrode of the first element (1) and a positive electrode of the second element (3) and which has a withstand voltage equal to the first withstand voltage, a negative electrode of the first element (1) and a negative electrode of the second element (3) being connected to each other, and a circuit (5) connected in a direction in which a positive voltage is applied to the positive electrode of the first element (1) and generating at least a voltage pulse lower than the first withstand voltage and outputs the voltage pulse in synchronization with the time when first element (1) goes off.

6. 发明专利

JP5482228B2 Current-mode circuit 有权
公开(公告)号：JP5482228B2
公开(公告)日：2014-05-07
申请号：JP2010013190
申请日：2010-01-25
申请人：富士通セミコンダクター株式会社
发明人：ジューソデディックイアン , ランバータスアレンギャビン
IPC分类号： H03M1/36 , H03K17/00 , H03K17/687 , H03M1/12
CPC分类号： H03M1/0614 , G11C27/02 , H01H9/54 , H03K17/00 , H03L7/00 , H03L7/091 , H03M1/002 , H03M1/0881 , H03M1/1009 , H03M1/12 , H03M1/121 , H03M1/1215 , H03M1/1245 , H03M1/126 , Y10T307/76

7. 发明专利

JP2013118386A Electrically actuated switch 有权
标题翻译：电动执行开关
公开(公告)号：JP2013118386A
公开(公告)日：2013-06-13
申请号：JP2012270961
申请日：2012-12-12
申请人： Hewlett-Packard Development Company L P , ヒューレット−パッカードデベロップメントカンパニーエル.ピー.Hewlett‐Packard Development Company, L.P.
发明人： R STANLEY WILLIAMS
IPC分类号： H01L27/105 , B82Y30/00 , H01L45/00 , H01L49/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0009 , G11C2213/52 , G11C2213/53 , G11C2213/56 , G11C2213/77 , H01L27/2463 , H01L45/1206 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H03K17/00
摘要： PROBLEM TO BE SOLVED: To provide a switch and a method of operating the switch which enhance performance of devices, especially their cyclability.SOLUTION: An electrically actuated switch 100' comprises a first electrode 102, a second electrode 104, and an active region 306 disposed between the electrodes. The active region comprises at least one primary active region 308 comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region 310 comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s).
摘要翻译：要解决的问题：提供一种提高设备性能的开关和操作方法，特别是其循环性。解决方案：电致动开关100'包括第一电极102，第二电极104和设置在电极之间的有源区域306。活性区域包括至少一个主要活性区域308，其包含至少一种可被掺杂或未掺杂以改变其导电性的材料，以及次级活性区域310，其包含至少一种用于提供离子种类的源/ 作为主要活性区域的掺杂剂。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2013115933A Semiconductor switch and power conversion equipment 有权
标题翻译：半导体开关和功率转换设备
公开(公告)号：JP2013115933A
公开(公告)日：2013-06-10
申请号：JP2011260321
申请日：2011-11-29
申请人： Toshiba Corp , 株式会社東芝
发明人： MOCHIKAWA HIROSHI , KUZUMAKI ATSUHIKO , TSUDA JUNICHI , KOYAMA YUJI
IPC分类号： H02M7/5387 , H02M1/08
CPC分类号： H02H3/18 , G05F3/02 , H01H47/00 , H03K17/00 , H03K17/567 , H03K17/687 , Y10T307/74
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor switch capable of preventing increase in output electrostatic capacitance of a main element and capable of suppressing turn-on loss which is caused by a junction capacity charge current.SOLUTION: The semiconductor switch includes a main element 1 which is a voltage drive type switching element of high voltage resistance and has a reverse conduction performance, a backflow prevention element 3 whose voltage resistance is lower than the main element 1, a high speed reflux diode 4 having a voltage resistance equivalent to the main element 1 in which a negative electrode of the main element 1 is connected to a negative electrode of the backflow prevention element 3, with a positive electrode of the main element 1 as a positive electrode terminal while a positive electrode of the backflow prevention element 3 as a negative electrode terminal, and which is connected between the positive electrode terminal and the negative electrode terminal in such a manner as forward direction runs from the negative electrode terminal to the positive electrode terminal, and a preliminary voltage application circuit 5 which is connected in a direction in which a positive voltage is applied to the positive electrode of the main element 1, to generate a voltage pulse lower than at least the voltage resistance of the main element 1 and output a voltage pulse in synchronous with the timing at which the main element 1 or the backflow prevention element 3 is turned off.
摘要翻译：要解决的问题：提供一种能够防止主元件的输出静电电容增加并且能够抑制由结电容充电电流引起的导通损耗的半导体开关。解决方案：半导体开关包括作为高电压电压的电压驱动型开关元件的主元件1和具有反向导通性能的电阻低于主元件1的防回流元件3，高具有与主元件1的负极相同的主元件1的电压电阻与防回流元件3的负极连接的高速回流二极管4，主元件1的正极为正极端子，而作为负极端子的防回流元件3的正极以正向的方式连接在正极端子和负极端子之间，从负极端子延伸到正极端子，以及在施加正电压的方向上连接的初电电压施加电路5 主要元件1的正电极，以产生比主元件1的至少电压电阻低的电压脉冲，并与主元件1或防回流元件3的正时同步地输出电压脉冲已关闭版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2013062687A Data multiplex transmission system, multiplex transmission signal receiver, multiplex transmission signal reception module, and multiplex transmission signal transmitter 审中-公开
标题翻译：数据多路复用传输系统，多路传输信号接收机，多路传输信号接收模块和多路传输信号发射机
公开(公告)号：JP2013062687A
公开(公告)日：2013-04-04
申请号：JP2011199911
申请日：2011-09-13
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TOYODA HIDEHIRO , KONO MASASHI
IPC分类号： H04J3/00
CPC分类号： H04L12/26 , H03K17/00 , H03L7/081 , H03L7/1976 , H04B1/00 , H04J3/00 , H04J3/047 , H04J3/062 , H04J3/0685 , H04L29/04 , H04L43/00
摘要： PROBLEM TO BE SOLVED: To provide a data multiplex transmission system capable of transmitting a plurality of digital signals having different frequency information at high speed regardless of their data contents, and capable of reproducing and separating the plurality of digital signals with keeping each of the frequency information at reception side.SOLUTION: A transmitter divides transmission data, associated with each of input channels having different frequency information, into data blocks each of which has fixed length as effective data, then multiplexes the plurality of data blocks, associated with the plurality of input channels, and outputs them on a transmission channel. Meanwhile, a receiver separates a data sequence received through the transmission channel into data flows with the same number of the input channels at transmitter side, then reproduces and stores effective transmission data from consecutive data blocks in each data flow, and outputs transmission data associated with each data flow synchronously to clock generated for each data flow.
摘要翻译：要解决的问题：提供一种数据多路复用传输系统，能够以与数据内容无关的方式高速地发送具有不同频率信息的多个数字信号，并且能够通过保持每个数字信号来再现和分离多个数字信号的接收侧的频率信息。解决方案：发送器将与具有不同频率信息的每个输入通道相关联的发送数据划分为每个具有固定长度作为有效数据的数据块，然后复用与多个输入通道相关联的多个数据块，并在传输通道上输出。同时，接收机将通过传输信道接收的数据序列分离成在发射机侧具有相同数目的输入信道的数据流，然后在每个数据流中再现并存储来自连续数据块的有效传输数据，并输出与每个数据流同步地为每个数据流生成时钟。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2010004021A Protection circuit for semiconductor integrated circuit and method of driving the same 有权
标题翻译：半导体集成电路的保护电路及其驱动方法
公开(公告)号：JP2010004021A
公开(公告)日：2010-01-07
申请号：JP2009109392
申请日：2009-04-28
申请人： Canon Inc , キヤノン株式会社
发明人： NAKAMURA HIROYUKI
IPC分类号： H01L21/822 , H01L21/8238 , H01L27/04 , H01L27/06 , H01L27/092
CPC分类号： H03K17/00
摘要： PROBLEM TO BE SOLVED: To prevent an excessive current from flowing through a protection device, and also to prevent latch-up. SOLUTION: A surge protection circuit includes a surge detection circuit 14 for detecting a surge applied to a semiconductor integrated circuit, and the protection device 15 for absorbing the surge. The protection device is arranged between a signal terminal for inputting a signal to the semiconductor integrated circuit and a power source terminal for supplying a power source voltage. When the surge detection circuit does not detect any surge while the power source voltage is not larger than a voltage enough to normally operate the semiconductor integrated circuit, the protection device is set in a current limiting state, and when the surge detection circuit detects a surge while the power source voltage is not larger than a voltage enough to normally operate the semiconductor integrated circuit, the protection device is set in a current non-limiting state. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了防止过大的电流流过保护装置，并且还防止闩锁。解决方案：浪涌保护电路包括用于检测施加到半导体集成电路的浪涌的浪涌检测电路14和用于吸收浪涌的保护装置15。保护装置设置在用于向半导体集成电路输入信号的信号端子和用于提供电源电压的电源端子之间。当浪涌检测电路在电源电压不大于足以正常操作半导体集成电路的电压的情况下不检测到任何浪涌时，保护装置被设置在限流状态，并且当浪涌检测电路检测到浪涌当电源电压不大于足以正常操作半导体集成电路的电压时，保护装置被设置在当前非限制状态。版权所有（C）2010，JPO＆INPIT

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