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1. 发明专利

JP5828767B2 直交ハイブリッドカプラ、増幅器、無線通信装置及び直交ハイブリッドカプラの制御方法有权
标题翻译：正交混合耦合器，放大器，一个无线通信装置和正交混合耦合器的控制方法
公开(公告)号：JP5828767B2
公开(公告)日：2015-12-09
申请号：JP2012000794
申请日：2012-01-05
申请人：パナソニック株式会社
发明人：中谷俊文
IPC分类号： H03F1/07 , H04B1/40
CPC分类号： H01P5/18 , G01K7/01 , G01K7/21 , H03F1/0288 , H03F3/195 , H03F3/245 , H03H7/21 , H03H7/48 , H03H7/54 , H04B1/109 , H04B1/40 , H01P1/184 , H03F2200/192 , H03F2200/198 , H03F2200/336 , H03F2200/468 , H03H7/18 , H03H7/19

2. 发明专利

JP5746153B2 適応パラメトリック電力増幅器保護回路有权
标题翻译：自适应参量功率放大器保护电路
公开(公告)号：JP5746153B2
公开(公告)日：2015-07-08
申请号：JP2012512079
申请日：2010-05-21
申请人：クゥアルコム・インコーポレイテッド , QUALCOMM INCORPORATED
发明人：ハドジクリストス、アリストテレ , サホタ、ガーカンワル・エス.
IPC分类号： H03F3/24 , H03F3/68 , H03F1/52
CPC分类号： H04B1/0466 , H03F1/523 , H03F3/24 , H03F2200/447 , H03F2200/468

3. 发明专利

JP2010074407A Bias controlling apparatus 审中-公开
标题翻译：偏差控制装置
公开(公告)号：JP2010074407A
公开(公告)日：2010-04-02
申请号：JP2008238329
申请日：2008-09-17
申请人： Toshiba Corp , 株式会社東芝
发明人： MOCHIZUKI AKIRA
IPC分类号： H03F1/52 , H03F1/30 , H03F3/24
CPC分类号： H03F1/301 , H03F2200/18 , H03F2200/447 , H03F2200/468
摘要： PROBLEM TO BE SOLVED: To provide a bias controlling apparatus making bias adjustment of an FET without wrong setting to a bias by which the FET is damaged.
SOLUTION: A gate bias circuit 1 generates a positive voltage signal for compensating temperature which is common between FETs 12 and 22 in a variable voltage reference 31, and generates a positive voltage signal for bias adjustment different for each of the FETs 12 and 22 by applying a positive voltage signal generated in a voltage reference 32 to each variable resistance 36 and 37 separately from the positive voltage signal for compensating temperature. By adding the positive voltage signal for compensating temperature and the positive voltage signal for bias adjustment at each of operational amplifiers 33 and 34 and inverting and amplifying the result, a bias voltage to each of the FET 12 and 22 is generated.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种偏压控制装置，其对FET的偏置调节而没有错误地设定到FET被损坏的偏压。解决方案：栅极偏置电路1产生用于补偿可变参考电压31中的FET 12和22之间共同的温度的正电压信号，并且产生用于每个FET 12和12的偏置调整的正电压信号通过将电压基准32中产生的正电压信号与用于补偿温度的正电压信号分开施加到每个可变电阻36和37上。通过在各运算放大器33,34中添加用于补偿温度的正电压信号和用于偏置调整的正电压信号，并且反相和放大结果，产生对FET 12和22中的每一个的偏置电压。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009536483A High-frequency power amplifier 有权
公开(公告)号：JP2009536483A
公开(公告)日：2009-10-08
申请号：JP2009508505
申请日：2007-05-04
申请人：アストリウム・リミテッド
发明人：クリストファー・デイヴィッド・セイモア
IPC分类号： H03F1/02 , H03F1/32 , H03F3/19 , H03F3/213
CPC分类号： H03F1/0244 , H03F1/0211 , H03F1/0222 , H03F1/0266 , H03F1/32 , H03F3/24 , H03F2200/105 , H03F2200/468 , H03F2201/3203
摘要：複数素子のアンテナの単一素子に給電するための半導体電力増幅器（ＳＳＰＡ）であって、前記ＳＳＰＡは、前置増幅器と、ドライバ増幅器（１６）と、電力出力段（１８）とを含む単一の増幅経路を有する高周波増幅器と、前記高周波増幅器の電力出力段（１８）に給電するためのＤＣ電圧の可変値を与えるための電子電力調整器（ＥＰＣ）と、前記ＤＣ電圧の値を決定するために前記ＥＰＣに電圧制御信号を与えるために前記高周波増幅器の入力電力信号（４６）を受信するための制御ＡＳＩＣ（４０）と、を備え、前記制御ＡＳＩＣは、一定の増幅の線形性を維持するために、入力電力の値を変動させるために前記高周波増幅器の利得圧縮を制御するように前記電力出力段（１８）への前記ＤＣ電圧（３６）の値を変動させるように、前記入力電力の値を変動させるための制御出力信号の出力値を定義する制御ワードの集合を保持するＥＥＰＲＯＭ（４２）をアドレス指定する。

5. 发明专利

JP2009219057A Amplifier circuit 有权
标题翻译：放大器电路
公开(公告)号：JP2009219057A
公开(公告)日：2009-09-24
申请号：JP2008063225
申请日：2008-03-12
申请人： Tektronix Internatl Sales Gmbh , テクトロニクス・インターナショナル・セールス・ゲーエムベーハー
发明人： YAMADA KOICHI
IPC分类号： H03F1/02 , H03F1/52
CPC分类号： H03F3/45475 , H03F1/0272 , H03F3/3066 , H03F2200/261 , H03F2200/405 , H03F2200/447 , H03F2200/468 , H03F2203/30031 , H03F2203/30078 , H03F2203/30111 , H03F2203/45101 , H03F2203/45138 , H03F2203/45541 , H03F2203/45586 , H03F2203/45588
摘要： PROBLEM TO BE SOLVED: To reduce power consumption in a current source of an amplification circuit, even during operation, while maintaining the linearity of the output signal.
SOLUTION: Since a previously set output voltage is supplied from a signal generating circuit, known output level information is utilized. Positive and negative current sources 60 and 62 receive an input voltage Vi which correspond to an output voltage Vo. An output resistor R50 generates the output voltage from currents supplied by the positive and negative current sources 60 and 62. A bias generation circuit 68 generates positive and negative bias voltages to be applied to the positive and negative current sources 60 and 62. Here, according to the level of the known output voltage desired, positive and negative bias voltages are set so as to maintain the linearity of the output voltage.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了降低放大电路的电流源中的功耗，即使在操作期间，同时保持输出信号的线性。解决方案：由于从信号发生电路提供预先设定的输出电压，因此利用已知的输出电平信息。正和负电流源60和62接收对应于输出电压Vo的输入电压Vi。输出电阻器R50根据由正和负电流源60和62提供的电流产生输出电压。偏置产生电路68产生要施加到正和负电流源60和62的正和负偏置电压。这里根据达到所需的已知输出电压的电平，设置正偏置电压和负偏置电压，以便保持输出电压的线性。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2006148546A Amplifier circuit, its control method and amplifier circuit module 审中-公开
标题翻译：放大器电路，其控制方法和放大器电路模块
公开(公告)号：JP2006148546A
公开(公告)日：2006-06-08
申请号：JP2004335982
申请日：2004-11-19
申请人： Eudyna Devices Inc , ユーディナデバイス株式会社
发明人： UI NORIHIKO
IPC分类号： H03F1/32 , H01L21/338 , H01L21/822 , H01L27/04 , H01L29/778 , H01L29/812
CPC分类号： H03F1/3276 , H01L27/0605 , H03F2200/468
摘要： PROBLEM TO BE SOLVED: To provide an amplifier circuit compensating phase distortion that occurs in the amplifier circuit using a GaN system semiconductor element.
SOLUTION: This amplifier circuit has: an amplifier 2 having an amplifying element in which an active area is made of a GaN or its compound semiconductor; and a phase compensation circuit 3 connected to the amplifier 2, provided with attenuation property and having negative phase distortion. When the amplifier is composed of the amplifying element in which the active area is made of a GaN or its compound semiconductor, the phase compensation circuit 3 having negative phase distortion is connected to the amplifier 2 to thereby compensate phase distortion that occurs in the amplifier.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种补偿使用GaN系半导体元件在放大器电路中发生的相位失真的放大器电路。解决方案：该放大器电路具有：具有放大元件的放大器2，其中有源区域由GaN或其化合物半导体构成; 以及连接到放大器2的相位补偿电路3，具有衰减特性并具有负相位失真。当放大器由有源区域由GaN或其化合物半导体构成的放大元件构成时，具有负相位失真的相位补偿电路3连接到放大器2，从而补偿在放大器中发生的相位失真。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2006033499A Class d amplifier 审中-公开
标题翻译： D类放大器
公开(公告)号：JP2006033499A
公开(公告)日：2006-02-02
申请号：JP2004210410
申请日：2004-07-16
申请人： Sony Corp , ソニー株式会社
发明人： OGURI KAZUATSU
IPC分类号： H03F3/217 , H03F99/00 , H03F1/52
CPC分类号： H03F3/217 , H03F3/2173 , H03F2200/331 , H03F2200/468
摘要： PROBLEM TO BE SOLVED: To prevent excessive generation of heat of a switching element and break of the element by the excessive generation of heat, and to obtain good audio property. SOLUTION: A detection part which detects an operation state of the switching element, is comprised in a switching amplification part 20 which drives a pair of switching elements, and creates a switching signal which is carried out pulse amplification. A signal creation part 10 which creates a pulse width modulated signal for driving the switching elements, is provided with a dead time setting part 12 which establishes dead time by using propagation delay time of a logic device, and delaying the pulse width modulated signal, and a control part 14 which controls the dead time setting part 12 based on the detection result of the detection part, makes the dead time long when it becomes an operation state that loss of the switching elements increases, and the detection result reaches a threshold value established beforehand, and makes the dead time short when it becomes an operation state the loss decreases, and the detection result reaches an threshold value established beforehand. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了防止开关元件的过度产生热量和过度产生热量而使元件断裂，并获得良好的音频特性。解决方案：检测开关元件的工作状态的检测部件包括在驱动一对开关元件的开关放大部件20中，并产生进行脉冲放大的开关信号。创建用于驱动开关元件的脉宽调制信号的信号产生部分10设置有死区时间设置部分12，其通过使用逻辑器件的传播延迟时间来建立死区时间，并延迟脉宽调制信号，以及基于检测部的检测结果来控制死区时间设定部12的控制部14在成为开关元件的损耗增加的动作状态时使死区时间变长，检测结果达到设定的阈值并且在成为运行状态时使死区时间短，并且检测结果达到事先设定的阈值。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

KR20210026776A KR20210026776A - Electronic device 审中-公开
公开(公告)号：KR20210026776A
公开(公告)日：2021-03-10
申请号：KR1020190108046A
申请日：2019-09-02
申请人： 삼성전자주식회사
发明人： 최두석 , 김영민 , 이제영 , 윤대영 , 이선우
IPC分类号： H04B1/40 , H04B1/04
CPC分类号： H04B1/40 , H03F1/3247 , H03F3/19 , H03F3/211 , H03F3/245 , H03F3/68 , H03G3/00 , H04B1/036 , H04B1/04 , H03F2200/105 , H03F2200/447 , H03F2200/451 , H03F2200/468 , H04B2001/0408 , H04B2001/0416
摘要： 전자 장치가 제공된다. 전자 장치는, 기저 대역 신호(baseband signal)를 처리하는 모뎀, 모뎀으로부터 제공된 기저 대역 신호를 IF 대역 신호로 변환하는 IF 트랜시버(IF transceiver) 및 IF 트랜시버로부터 제공된 IF 대역 신호를 RF 대역 신호로 변환하는 RF 트랜시버(RF transceiver)를 포함하되, RF 트랜시버는, RF 대역 신호를 증폭하는 전력 증폭기(power amplifier)와, 전력 증폭기에 연결되어, 전력 증폭기의 온도를 검출하는 온도 센서 유닛(temperature sensor unit)을 포함하고, 모뎀은, 온도 센서 유닛에서 검출된 전력 증폭기의 온도에 기초하여 RF 트랜시버에 입력되는 입력 전력을 제어하는 제어부를 포함한다.

9. 发明专利

JP6387902B2 多段増幅器有权
公开(公告)号：JP6387902B2
公开(公告)日：2018-09-12
申请号：JP2015109040
申请日：2015-05-28
申请人：三菱電機株式会社
发明人：平間哲也
IPC分类号： H03F3/68 , H03F1/30
CPC分类号： H03F3/211 , H03F1/0205 , H03F1/30 , H03F1/301 , H03F1/302 , H03F3/193 , H03F3/45183 , H03F3/45475 , H03F3/45479 , H03F2200/408 , H03F2200/447 , H03F2200/468 , H03F2200/555

10. 发明专利

JP6223388B2 通信装置有权
公开(公告)号：JP6223388B2
公开(公告)日：2017-11-01
申请号：JP2015127999
申请日：2015-06-25
申请人：京セラ株式会社
发明人：磯山伸治
IPC分类号： H04B1/04
CPC分类号： H03F3/195 , H03F1/30 , H03F3/245 , H04B1/38 , H04L5/001 , H03F2200/111 , H03F2200/171 , H03F2200/414 , H03F2200/447 , H03F2200/451 , H03F2200/468

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