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1. 发明专利

JP2013140925A Attenuator 审中-公开
标题翻译：衰弱者
公开(公告)号：JP2013140925A
公开(公告)日：2013-07-18
申请号：JP2012047187
申请日：2012-03-02
申请人： Sae Magnetics(H K )Ltd , 新科實業有限公司SAE Magnetics(H.K.)Ltd.
发明人： MATONO NAOTO , WU ZIJUN , WANG HUI
IPC分类号： H01C13/00 , H03H7/24
CPC分类号： H01P1/227 , H01L27/0802 , H01P1/22 , H03H7/24
摘要： PROBLEM TO BE SOLVED: To provide an attenuator which achieves a more compact structure while improving heat radiation performance.SOLUTION: An attenuator 1 comprises: a first portion 10; and a second portion 20. The first portion 10 includes: an insulation substrate 11; and a resistor part 12 formed on the insulation substrate 11. The second portion 20 includes: an insulation substrate 21; and a terminal part 22 formed on the insulation substrate 21 and connected with the resistor part 12. The insulation substrate 11 is made of a high heat conductivity material such as AIN. On the other hand, the insulation substrate 21 is made of a material such as Si that has heat conductivity lower than that of the insulation substrate 11. Thus, heat generated in the resistor part 12 is not easily transmitted to the terminal part 22 during the use of the attenuator 1, compared to a case where the terminal part is provided on the same substrate where a resistor is provided.
摘要翻译：要解决的问题：提供一种在提高散热性能的同时实现更紧凑的结构的衰减器。解决方案：衰减器1包括：第一部分10; 和第二部分20.第一部分10包括：绝缘基板11; 以及形成在绝缘基板11上的电阻部分12.第二部分20包括：绝缘基板21; 以及形成在绝缘基板21上并与电阻部分12连接的端子部分22.绝缘基板11由诸如AIN的高导热性材料制成。另一方面，绝缘基板21由导热率低于绝缘基板11的导热率的Si等材料制成。因此，在电阻部12中产生的热不容易在端子部22中传递到端子部22 与将端子部设置在设置有电阻器的同一基板上的情况相比，使用衰减器1。

2. 发明专利

JP2007180392A Resistance board and attenuator provided therewith 有权
标题翻译：电阻板和电阻器
公开(公告)号：JP2007180392A
公开(公告)日：2007-07-12
申请号：JP2005379105
申请日：2005-12-28
申请人： Hirose Electric Co Ltd , ヒロセ電機株式会社
发明人： NISHIMURA HIROAKI
IPC分类号： H01C13/02 , H01C13/00
CPC分类号： H01P1/227
摘要： PROBLEM TO BE SOLVED: To provide a resistance board for manufacturing the shape of resistance having a desired pattern.
SOLUTION: A resistance layer and a metallic layer are provided for covering at least part of the resistance layer, the metal layer is used for a signal transmitter, the resistance layer not covered by the metal layer is used for a resistance part, and the resistance layers not covered by the metal layer are connected by the metal layer to form the resistance pattern. The resistance layer includes two signals arranged at positions opposite to each other, two signal lines tying the two signals, ground lines respectively connected to the two signal lines, and a ground to which the ground lines extend. The metal layer is provided to part of the signal lines. Consequently, a first resistor and the signal transmitter are provided to the signal line, and a second resistor connected in series are formed. The metal layer is provided to part of the ground lines. Consequently, the resistor and the signal transmitter are formed in the ground line, and the ground line is connected to the signal transmitter of the signal line and the T-shaped or π-shaped resistance block pattern is formed.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造具有所需图案的电阻形状的电阻板。解决方案：提供电阻层和金属层以覆盖电阻层的至少一部分，金属层用于信号发射器，未被金属层覆盖的电阻层用于电阻部分，未被金属层覆盖的电阻层通过金属层连接而形成电阻图案。电阻层包括布置在彼此相对的位置处的两个信号，两个信号线与两个信号相连，分别连接到两个信号线的接地线和接地线延伸的接地。金属层被提供给部分信号线。因此，向信号线提供第一电阻器和信号发送器，并且形成串联连接的第二电阻器。金属层被提供给部分接地线。因此，电阻器和信号发送器形成在接地线中，并且接地线连接到信号线的信号发送器，并且形成T形或π形电阻块图形。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JPS5919406A Variable attenuator using reflecting type constant phase diode 失效
标题翻译：使用反射型恒定相二极管的变化的衰减器
公开(公告)号：JPS5919406A
公开(公告)日：1984-01-31
申请号：JP12945682
申请日：1982-07-22
申请人： Mitsubishi Electric Corp
发明人： SUGA JIROU
IPC分类号： H01P1/203 , H01P1/22
CPC分类号： H01P1/227
摘要： PURPOSE:To make the frequency characteristics broad and to attain miniaturization and low loss, by constituting a stub near a diode with a short stub added to an open stub. CONSTITUTION:A high frequency signal inputted from a terminal 2a of a circulator 2 passes through a microstrip main line via a terminal 2b, is reflected at the diode 3, and passes again through the microstrip main line and the terminal 2b, and is outputted to a terminal 2c. The normalized admittance of the diode 3 under a bias is shown in a curve 7 of the Smith chart and the susceptance is constant as a curve 11. The conductance component is obtained as shown in a line segment 12 by adding the short stub 10 having l4 length to a position of the microstrip main line returned from the diode 3 by l3 along the main line.
摘要翻译：目的：为了使频率特性变宽，通过在开路短截线附近构成短截线二极管附近的短截线，实现小型化和低损耗。构成：从环行器2的端子2a输入的高频信号通过端子2b通过微带线，在二极管3反射，再次通过微带线和端子2b，输出到端子2c。二极管3在偏压下的归一化导纳示于史密斯圆图的曲线7中，电纳值作为曲线11是恒定的。电导分量如线段12所示，通过将具有14的短截线10 长度到从二极管3返回的沿着主线的13微带主线的位置。

5. 发明专利

JP2005051364A Limiter circuit 有权
标题翻译：限制电路
公开(公告)号：JP2005051364A
公开(公告)日：2005-02-24
申请号：JP2003203928
申请日：2003-07-30
申请人： Toshiba Corp , 株式会社東芝
发明人： KOJIMA HARUO
IPC分类号： H01P1/00 , H01P1/22 , H03G11/00 , H03G11/02
CPC分类号： H01P1/227
摘要： PROBLEM TO BE SOLVED: To obtain a limiter circuit which does not reflect a high-level and high-frequency signal on equipment connected in front of it, and has an excellent input-side voltage-to-standing wave ratio even when the high-level and high-frequency signal is inputted. SOLUTION: One end of a transmission line 6 of λ/4 length which has specified characteristic impedance is used as an input end, and the other end is used as an output end. A PIN diode 2 is connected to the input end through a terminator 1 and a PIN diode 3 is connected to the output end, both in parallel to a transmission line 6. The two PIN diodes 2 and 3 are both in a conductive state for the high-level and high-frequency signal and the transmission line 6 is made to operate as a high-impedance line, thereby greatly attenuating the inputted signal and outputting it. Further, the input end is terminated by the terminator 1 to suppress reflection on equipment before it, thereby obtaining the excellent voltage-to-standing wave ratio. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了获得在其前面连接的设备上不反映高电平和高频信号的限幅器电路，并且即使当具有优异的输入侧电压 - 驻波比输入高电平和高频信号。
解决方案：将具有特定阻抗的λ/ 4长度的传输线6的一端用作输入端，另一端用作输出端。 PIN二极管2通过端接器1连接到输入端，并且PIN二极管3与传输线6并联连接到输出端。两个PIN二极管2和3都处于导通状态高电平和高频信号，并且使传输线6作为高阻抗线工作，从而大大衰减输入信号并输出。此外，输入端由终端器1终止，以抑制其之前的设备的反射，从而获得优异的电压与驻波比。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JPS59165502A Resistance attenuator 失效
标题翻译：电阻衰减器
公开(公告)号：JPS59165502A
公开(公告)日：1984-09-18
申请号：JP3950983
申请日：1983-03-09
申请人： Fujitsu Ltd
发明人： BABA OSAMU , FURUYA OSAHISA
IPC分类号： H01P1/22
CPC分类号： H01P1/227
摘要： PURPOSE:To simplify the constitution of a resistance attenuator with no limitation of the circuit constitution by terminating an end of a resistance film to a transmission line formed on a microwave IC substrate with the other end of the resistance film terminated with a lambda/4 distribution constant. CONSTITUTION:A resistance film 4 and a transmission line 3 are formed in a T-shape, and an end of the film 4 is connected to the line with the other end connected to a conduction film 5 respectively. The length (l) of the film 5 is set approximately equal to lambda/4, where (lambda) means the length of a microwave of a working frequency on a substrate 1, and the film 5 forms a lambda/4 distribution constant line 5. As a result, the juncture part 6 between the line 5 and the film 4 is short-circuited. This means that the film 4 is earthed in terms of a high frequency at the part 6. Thus it is possible to simplify the constitution of a resistance attenuator with no limitation of the circuit constitution.
摘要翻译：目的：为了简化电阻衰减器的结构，通过将电阻膜的端部终止于形成在微波IC基板上的传输线，电阻膜的另一端以λ/ 4分布终止，不限制电路构造不变。构成：电阻膜4和传输线3形成为T形，并且膜4的端部分别连接到线路，另一端分别连接到导电膜5。膜5的长度（l）设定为近似等于λ/ 4，其中（λ）表示基板1上的工作频率的微波的长度，并且膜5形成λ/ 4分布常数线5 结果，线5与膜4之间的接合部6短路。这意味着薄膜4在部分6处以高频率接地。因此，可以在不限制电路结构的情况下简化电阻衰减器的结构。

7. 发明专利

JPS59148403A Constant resistance variable attenuator formed into slot line 失效
标题翻译：恒定电阻可变衰减器形成槽线
公开(公告)号：JPS59148403A
公开(公告)日：1984-08-25
申请号：JP2210183
申请日：1983-02-15
申请人： Nippon Telegr & Teleph Corp
发明人： OGAWA HIROTSUGU
IPC分类号： H01P1/22 , H03H7/24 , H03H7/25
CPC分类号： H01P1/227
摘要： PURPOSE:To obtain an excellent frequency characteristic even at a high frequency band by cutting off a ground conductor at one side of a slot line formed on a board and connecting the 1st variable resistance element in series to said cut-off part so as to reduce parasitic inductance. CONSTITUTION:The ground conductor at one side of the slot line 10 is cut off and separated left and right, a diode 3 constituting a series resistor is connected to the gap and a DC bias is applied through a coil 8. Since the cut-off left and right conductors are separated in terms of DC, no capacitor for cutting off DC is required and then no unnecessary parasitic inductance is added to the diode 3. One end of a diode 4 is connected directly to a ground conductor at this side of the slot line 10 by means of soldering or the like, allowing to reduce remarkably the effect of the parasitic by a short-circuit conductor.
摘要翻译：目的：即使在高频带上也可以通过切断形成在基板上的槽线一侧的接地导体，并将第一可变电阻元件串联连接到所述截止部分以获得极好的频率特性，以便减少寄生电感。构成：缝线10的一侧的接地导体被切断并左右分离，构成串联电阻的二极管3连接到间隙，并通过线圈8施加直流偏压。由于截止左右导体以直流分离，不需要用于切断直流的电容器，然后不会对二极管3添加不必要的寄生电感。二极管4的一端直接连接到接地导体插槽线10通过焊接等，允许通过短路导体显着降低寄生的影响。

8. 发明专利

JPS59101903A Semiconductor attenuator 失效
标题翻译：半导体衰减器
公开(公告)号：JPS59101903A
公开(公告)日：1984-06-12
申请号：JP21198482
申请日：1982-12-02
申请人： Mitsubishi Electric Corp
发明人： FURUYA TERUO
IPC分类号： H01P1/22 , H01P3/08
CPC分类号： H01P1/227
摘要： PURPOSE:To improve a control characteristic and a high frequency characteristic by placing an FET like a distributed constant, and controlling it by the same condition. CONSTITUTION:An internal electric conductor 3 is formed in the shape of a comb in a prescribed section, and its uneven amount is set to the maximum in the center of the comb-shaped part. An earth electric conductor 10 which forms an inter-digital constitution with the comb-shaped part of the electric conductor 3 and also is connected with a ground electric conductor 2 by a through-hole electric conductor 8 is formed. The uneven part of the electric conductor 3 and the uneven part of the electric conductor 10 constitute a drain electrode 5 of an FET 4 and a source electrode 6 of the FET4, respectively, and a gate electrode 7 of the FET 4 consisting of a bend structure is formed in the inter-digital constitution formed by the electric conductors 3, 10. In this way, since the FET4 like a distributed constant is formed by one electrode 7, the variable attenuation is controlled simply and easily. Also, inductance and capacitance generated by the electrodes 5, 6, or the influence by them are also reduced, and a good characteristic is obtained.
摘要翻译：目的：通过放置像分布常数的FET来改善控制特性和高频特性，并通过相同的条件进行控制。构成：内部电导体3形成为规定部位的梳状，其不均匀量设定为梳状部的中心的最大值。形成与电导体3的梳状部分形成数字间构造的地电导体10，并且还通过通孔电导体8与地电导体2连接。电导体3的不平坦部分和电导体10的不平坦部分分别构成FET 4的漏电极5和FET4的源电极6，以及FET 4的栅极电极7，其由弯曲部结构由电导体3,10形成的数字间结构形成。这样，由于类似分布常数的FET4由一个电极7形成，所以可变衰减被简单且容易地控制。此外，由电极5,6产生的电感和电容或它们的影响也降低，并且获得良好的特性。

9. 发明专利

JPS5721121B2 JPS5721121B2 - 失效
公开(公告)号：JPS5721121B2
公开(公告)日：1982-05-06
申请号：JP9276177
申请日：1977-08-02
IPC分类号： H01P1/00 , H01P1/203 , H01P1/207 , H01P1/22
CPC分类号： H01P1/227

10. 发明专利

JP2018082431A 切り替え可能な減衰器および切り替え可能な高周波減衰器用スイッチ审中-公开
公开(公告)号：JP2018082431A
公开(公告)日：2018-05-24
申请号：JP2017206024
申请日：2017-10-25
申请人：ローデウントシュヴァルツゲーエムベーハーウントコンパニカーゲー
发明人：ミハエルスタンス , マーカスライポルド , セバスチャンセドルマイア , マーカスフロイデンライヒ , マティアスフロイデンライヒ , カールストックバウア , アンドレアスライス , アロイスウィッテンゼルナー
IPC分类号： H03H7/25 , H01P1/22 , H01P1/12
CPC分类号： H01P1/222 , H01H3/12 , H01H2239/004 , H01P1/12 , H01P1/227 , H01P5/04
摘要：【課題】高い周波数を許容すると同時に、膨大な建設費用が発生せずに、小さい空間容積のみを必要とする、スイッチ、減衰段、および切り替え可能な減衰器を提供する【解決手段】スイッチは、第1の平面において直角に配置される第1、第2のストリップ導体36、32を備える。さらに、スイッチは、第1の平面に対して直角に角度がついた形状を有する第1の切り替え導体46を有する。スイッチは、第1の切り替え導体46と機械的に接続し、第1、第2の位置まで、第1の平面に対して垂直に移動させる切り替えアクチュエータを備える。切り替えアクチュエータは、第1の位置において、第1のストリップ導体36が第1の切り替え導体46と接触し第2のストリップ導体32が第1の切り替え導体46と接触するように構成され、第2の位置において、第1のストリップ導体36および第2のストリップ導体32が第1の切り替え導体46と接触しないように構成される。【選択図】図7

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