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1. 发明专利

JP2017516306A 持続的ボンディングのための方法及び装置有权
公开(公告)号：JP2017516306A
公开(公告)日：2017-06-15
申请号：JP2016566671
申请日：2015-04-22
申请人：エーファウ・グループ・エー・タルナー・ゲーエムベーハー
发明人：ヴィンプリンガーマークス , ヴィンプリンガーマークス , レープハンベアンハート , レープハンベアンハート
IPC分类号： H01L21/02 , B23K20/10
CPC分类号： H01L24/83 , H01L21/67092 , H01L21/67144 , H01L24/75 , H01L2224/29147 , H01L2224/75251 , H01L2224/75343 , H01L2224/8303 , H01L2224/83193 , H01L2224/83206 , H01L2224/83207 , H01L2224/83895 , H01L2924/20108
摘要：本発明は、第1の基板(1)の第1の層(2)をボンディング界面(5)で第2の基板(1’)の第2の層(2’)に持続的にボンディングする方法に関する。本発明によれば、第1の層(2)及び/又は第2の層(2’)の転位(4)の転位密度が、少なくともボンディング界面(5)の領域においてボンディング前及び/又はボンディング中に高められる。本発明はさらに、対応する装置にも関する。

2. 发明专利

JP4889802B2 Chippubonda 有权
公开(公告)号：JP4889802B2
公开(公告)日：2012-03-07
申请号：JP2010149012
申请日：2010-06-30
申请人：アキム株式会社
发明人：勇雄中原 , 一久百瀬
IPC分类号： H01L21/52 , H01L21/60 , H05K13/04
CPC分类号： H01L24/75 , H01L24/81 , H01L24/83 , H01L24/95 , H01L2224/753 , H01L2224/7531 , H01L2224/75355 , H01L2224/7565 , H01L2224/75745 , H01L2224/75801 , H01L2224/75821 , H01L2224/759 , H01L2224/7598 , H01L2224/81205 , H01L2224/83205 , H01L2224/83206 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01074

3. 发明专利

JP4343117B2 Semiconductor device and a method of manufacturing the same 有权
公开(公告)号：JP4343117B2
公开(公告)日：2009-10-14
申请号：JP2005002016
申请日：2005-01-07
申请人：株式会社ルネサステクノロジ
发明人：弘幸中村 , 和利伊藤 , 浩偉岡 , 良一梶原 , 秀政鍵井
IPC分类号： H01L21/52 , H01L23/48
CPC分类号： H01L23/3735 , H01L23/3107 , H01L23/3677 , H01L23/4334 , H01L23/49537 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/743 , H01L24/78 , H01L24/83 , H01L24/85 , H01L24/97 , H01L2224/04042 , H01L2224/05553 , H01L2224/05624 , H01L2224/05647 , H01L2224/0603 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29294 , H01L2224/29298 , H01L2224/32245 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48724 , H01L2224/48747 , H01L2224/49171 , H01L2224/73265 , H01L2224/743 , H01L2224/78 , H01L2224/78301 , H01L2224/83192 , H01L2224/83206 , H01L2224/83801 , H01L2224/85181 , H01L2224/85205 , H01L2224/92 , H01L2224/92247 , H01L2224/97 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/181 , H01L2924/19043 , H01L2924/351 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/01039 , H01L2924/00 , H01L2924/00012 , H01L2924/01031 , H01L2924/01012 , H01L2924/01032 , H01L2924/01026 , H01L2924/01083 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： Pb free solder is used in die bonding. A thermal stress reduction plate is disposed between a semiconductor chip and a die pad made of a Cu alloy. The semiconductor chip and the thermal stress reduction plate are joined and the thermal stress reduction plate and the die pad are joined by a joint material of Pb free solder having Sn-Sb-Ag-Cu as its main constituent elements and having a solidus temperature not lower than 270° C. and a liquidus temperature not higher than 400° C. Thus, die bonding can be performed using the Pb free solder without generating any chip crack.

4. 发明专利

JP2006190850A Semiconductor device and its manufatcuring method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2006190850A
公开(公告)日：2006-07-20
申请号：JP2005002016
申请日：2005-01-07
申请人： Renesas Technology Corp , 株式会社ルネサステクノロジ
发明人： KAJIWARA RYOICHI , ITO KAZUTOSHI , KAGII HIDEMASA , OKA HIROTAKE , NAKAMURA HIROYUKI
IPC分类号： H01L21/52 , H01L23/48
CPC分类号： H01L23/3735 , H01L23/3107 , H01L23/3677 , H01L23/4334 , H01L23/49537 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/743 , H01L24/78 , H01L24/83 , H01L24/85 , H01L24/97 , H01L2224/04042 , H01L2224/05553 , H01L2224/05624 , H01L2224/05647 , H01L2224/0603 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29294 , H01L2224/29298 , H01L2224/32245 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48724 , H01L2224/48747 , H01L2224/49171 , H01L2224/73265 , H01L2224/743 , H01L2224/78 , H01L2224/78301 , H01L2224/83192 , H01L2224/83206 , H01L2224/83801 , H01L2224/85181 , H01L2224/85205 , H01L2224/92 , H01L2224/92247 , H01L2224/97 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/181 , H01L2924/19043 , H01L2924/351 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/01039 , H01L2924/00 , H01L2924/00012 , H01L2924/01031 , H01L2924/01012 , H01L2924/01032 , H01L2924/01026 , H01L2924/01083 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： PROBLEM TO BE SOLVED: To use a lead-free solder for die bonding. SOLUTION: A stress buffering plate 8 is placed between a semiconductor chip 1 and a die pad 4 made of a Cu alloy. The semiconductor chip 1 and the stress buffering plate 8, and the stress buffering plate 8 and the die pad 4 are joined by joining materials 10 and 9 of lead-free solder wherein its solid phase temperature is 270°C or higher, its liquid phase temperature is 400°C or lower, and its main constituent elements are Sn, Sb, Ag and Cu. Thus, the lead-free solder can be used for die bonding without generating cracks of chips. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：使用无铅焊料进行芯片焊接。解决方案：将应力缓冲板8放置在半导体芯片1和由Cu合金制成的芯片焊盘4之间。半导体芯片1和应力缓冲板8以及应力缓冲板8和芯片焊盘4通过其固相温度为270℃以上的无铅焊料的接合材料10,9接合，其液相温度为400℃以下，其主要成分为Sn，Sb，Ag，Cu。因此，无铅焊料可用于芯片接合而不产生芯片裂纹。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2015056641A 半導体装置及びその製造方法审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2015056641A
公开(公告)日：2015-03-23
申请号：JP2013191132
申请日：2013-09-13
申请人：株式会社東芝 , Toshiba Corp
发明人： SASAKI HARUKA , KURI YUUJI , KOTANI KAZUYA , YAMAMOTO ATSUSHI , MATSUMURA HITOTSUGU
IPC分类号： H01L21/52
CPC分类号： H01L23/481 , H01L24/04 , H01L24/29 , H01L24/32 , H01L24/82 , H01L24/83 , H01L2224/04026 , H01L2224/05655 , H01L2224/26152 , H01L2224/29109 , H01L2224/29111 , H01L2224/29118 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/3201 , H01L2224/32058 , H01L2224/32227 , H01L2224/32505 , H01L2224/82101 , H01L2224/83192 , H01L2224/83206 , H01L2224/83207 , H01L2224/83447 , H01L2224/83815 , H01L2924/01322 , H01L2924/351 , H01L2924/00 , H01L2924/00014 , H01L2924/014 , H01L2924/01049 , H01L2924/0105 , H01L2924/00012
摘要：【課題】高温環境でも半導体素子と実装基板との接合部の信頼性を向上させることができる半導体装置及びその製造方法を提供すること。【解決手段】実施形態に係る半導体装置は、半導体素子と、配線層と、接合層と、を含む。前記配線層は、Cuを含む。前記接合層は、前記半導体素子と前記配線層との間で実質的に一様な組成で設けられたCuとCu以外の第1金属との合金である第1合金を含む。前記第1合金の融点は、前記第1金属の融点よりも高い。【選択図】図1
摘要翻译：要解决的问题：提供即使在高温环境下也能够提高半导体元件和安装基板之间的接合部的可靠性的半导体器件，并提供其制造方法。解决方案：半导体器件包括：半导体元件，布线层和接合层。布线层含有Cu。接合层含有在半导体元件和布线层之间以基本均匀的组成提供的Cu和除Cu之外的第一金属的合金的第一合金。第一合金的熔点高于第一金属的熔点。

6. 发明专利

JP2012532979A Method of connecting electronic components using the adhesive and this anisotropic conductivity for ultrasonic bonding 有权
公开(公告)号：JP2012532979A
公开(公告)日：2012-12-20
申请号：JP2012520524
申请日：2010-01-27
申请人：カイスト
发明人：パイク，ギョン‐ウク , リ，キウォン , ホキム，スン
IPC分类号： C09J201/00 , C09J5/06 , C09J7/00 , C09J11/04 , C09J11/08
CPC分类号： C09J9/02 , C08K7/16 , C09J5/06 , C09J11/08 , C09J2203/326 , C09J2205/31 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/16225 , H01L2224/16227 , H01L2224/29111 , H01L2224/2929 , H01L2224/293 , H01L2224/29311 , H01L2224/29316 , H01L2224/29386 , H01L2224/2939 , H01L2224/29439 , H01L2224/29444 , H01L2224/29447 , H01L2224/29455 , H01L2224/2949 , H01L2224/29493 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/81191 , H01L2224/83191 , H01L2224/83192 , H01L2224/83205 , H01L2224/83206 , H01L2224/83815 , H01L2224/83851 , H01L2224/83855 , H01L2224/83905 , H01L2924/00013 , H01L2924/01029 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/07811 , H01L2924/12041 , H01L2924/15788 , H01L2924/351 , H01L2924/014 , H01L2924/00014 , H01L2924/01083 , H01L2924/0103 , H01L2924/01047 , H01L2924/01079 , H01L2924/0105 , H01L2924/00 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/0665
摘要： The present invention is to provide an anisotropic conductive adhesive (ACA) for ultrasonic wave adhesion, which electrically connects a first electrode, which is an electrode of a connection portion of a first electronic component, with a second electrode, which is an electrode of a connection portion of a second electronic component. The anisotropic conductive adhesive includes an insulating polymer resin, conductive adhesive particles which are melted by heat generated from the ultrasonic waves applied to the anisotropic conductive adhesive, and spacer particles, which have a melting point higher than that of the adhesive particles, and wherein the adhesive particles are melted and made to come in surface contact with at least one electrode selected from the first electrode and the second electrodes, and the first electrode and the second electrode are electrically connected with a constant gap maintained between the first electrode and the second electrode by the spacer particles.

7. 发明专利

JP2006179735A Semiconductor device, and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2006179735A
公开(公告)日：2006-07-06
申请号：JP2004372560
申请日：2004-12-24
申请人： Renesas Technology Corp , 株式会社ルネサステクノロジ
发明人： OKAMOTO MASAHIDE , IKEDA YASUSHI , MUTO AKIRA , SATO YUKIHIRO
IPC分类号： H01L23/48 , H01L21/52
CPC分类号： H01L23/49562 , H01L23/051 , H01L23/3107 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/83 , H01L2224/29 , H01L2224/2908 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29144 , H01L2224/29147 , H01L2224/2916 , H01L2224/2919 , H01L2224/29298 , H01L2224/32014 , H01L2224/32245 , H01L2224/37147 , H01L2224/37599 , H01L2224/81205 , H01L2224/83101 , H01L2224/83206 , H01L2224/83801 , H01L2224/83805 , H01L2224/84801 , H01L2224/8485 , H01L2924/00011 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H01L2924/01083 , H01L2924/00 , H01L2924/01014 , H01L2924/00012 , H01L2924/00014 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： PROBLEM TO BE SOLVED: To suppress or prevent the damage of a semiconductor chip, in a semiconductor device wherein the semiconductor chip having such formed transistors for power supplies as a power MOSFET is integrated into a sealing body. SOLUTION: In the semiconductor device having a package structure; such lead terminals 3DL, 3SL, 3GL that each of them is connected with one of the electrodes of both the upper, and lower surfaces of a semiconductor chip 2 are exposed from at least one of both the upper and lower surfaces and the side surfaces of a sealing body 1 formed out of a resin. Each of the electrodes of the semiconductor chip 2 and each of lead terminals 3DL, 3SL, 3GL are connected by each of lead-free connecting portions 4A, 4B, 4C having the constitution of a connective layer/stress buffering layer/connective layer. Each electrode, each lead terminal, and each connecting portion are correspondent to each other. In the lead-free connecting portions 4A, 4B, 4C, the connective layer is formed out of an intermetallic-compound layer having a melting point not lower than 260°C or out of a lead-free solder having a melting point not lower than 260°C, and the stress buffering layer having a thermal-stress buffering function is formed out of a metal layer having a melting point not lower than 260°C. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了抑制或防止半导体芯片的损坏，在半导体器件中，将具有这种形成的用于功率MOSFET的电源的晶体管的半导体芯片集成到密封体中。解决方案：在具有封装结构的半导体器件中; 它们中的每一个与半导体芯片2的上表面和下表面的电极之一连接的这些引线端子3DL，3SL，3GL从上表面和下表面的至少一个和侧表面露出，由树脂形成的密封体1。半导体芯片2的每个电极和引线端子3DL，3SL，3GL中的每一个通过具有连接层/应力缓冲层/连接层的构造的无铅连接部分4A，4B，4C连接。每个电极，每个引线端子和每个连接部分彼此对应。在无铅连接部分4A，4B，4C中，连接层由熔点不低于260℃的金属间化合物层或熔点不低于无铅焊料形成。 260℃，具有热应力缓冲功能的应力缓冲层由熔点不低于260℃的金属层形成。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2012015250A Chip bonder 有权
标题翻译：芯片粘合剂
公开(公告)号：JP2012015250A
公开(公告)日：2012-01-19
申请号：JP2010149012
申请日：2010-06-30
申请人： Akim Kk , アキム株式会社
发明人： MOMOSE KAZUHISA , NAKAHARA ISAO
IPC分类号： H01L21/52 , H01L21/60 , H05K13/04
CPC分类号： H01L24/75 , H01L24/81 , H01L24/83 , H01L24/95 , H01L2224/753 , H01L2224/7531 , H01L2224/75355 , H01L2224/7565 , H01L2224/75745 , H01L2224/75801 , H01L2224/75821 , H01L2224/759 , H01L2224/7598 , H01L2224/81205 , H01L2224/83205 , H01L2224/83206 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01074
摘要： PROBLEM TO BE SOLVED: To provide a chip bonder that enables high-speed ultrasonic wave welding of an electronic component piece and a partner side member by a simple structure.SOLUTION: A chip bonder has: a turret 10 using the center axis as a rotation axis; a turret driving motor 20; a component holding unit 30 having a plurality of ultrasonic wave horns 32 provided in a circumferential direction of the turret 10 and each of which is provided with a suction nozzle 33, a horn supporting member 34 supporting the ultrasonic wave horns 32, and a case 31 supporting the horn supporting member 34 slidably in a vertical direction, and that sucks an electronic component piece 300 by the suction nozzle 33, and welds the electronic component piece 300 and a partner side member by ultrasonic wave vibration of the ultrasonic wave horn 32; a component holding unit guide device 50 that guides the component holding unit 30 so that the component holding unit 30 relatively moves to the turret 10; and a component holding unit driving device 80 that moves the component holding unit 30 downward by pressing the component holding unit 30 guided by the component holding unit guide device 50.
摘要翻译：要解决的问题：提供一种能够通过简单的结构实现电子部件和对方侧部件的高速超声波焊接的芯片接合装置。解决方案：芯片接合器具有：使用中心轴作为旋转轴的转塔10; 转塔驱动电动机20; 具有设置在转台10的圆周方向上的多个超声波波峰32的部件保持单元30，每个超声波波峰32设置有吸嘴33，支撑超声波喇叭32的喇叭支撑构件34和壳体31 沿着垂直方向可滑动地支撑喇叭支撑构件34，并且通过吸嘴33吸收电子部件300，并通过超声波波峰32的超声波振动焊接电子部件300和对方侧部件; 部件保持单元引导装置50，其引导部件保持单元30，使得部件保持单元30相对移动到转台10; 以及通过按压由部件保持单元引导装置50引导的部件保持单元30向下移动部件保持单元30的部件保持单元驱动装置80.（C）2012年，JPO＆INPIT

10. 发明专利

JP4262672B2 Semiconductor device and a method of manufacturing the same 有权
公开(公告)号：JP4262672B2
公开(公告)日：2009-05-13
申请号：JP2004372560
申请日：2004-12-24
申请人：株式会社ルネサステクノロジ
发明人：幸弘佐藤 , 正英岡本 , 晃武藤 , 靖池田
IPC分类号： H01L23/48 , H01L21/52
CPC分类号： H01L23/49562 , H01L23/051 , H01L23/3107 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/83 , H01L2224/29 , H01L2224/2908 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29144 , H01L2224/29147 , H01L2224/2916 , H01L2224/2919 , H01L2224/29298 , H01L2224/32014 , H01L2224/32245 , H01L2224/37147 , H01L2224/37599 , H01L2224/81205 , H01L2224/83101 , H01L2224/83206 , H01L2224/83801 , H01L2224/83805 , H01L2224/84801 , H01L2224/8485 , H01L2924/00011 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H01L2924/01083 , H01L2924/00 , H01L2924/01014 , H01L2924/00012 , H01L2924/00014 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： In a semiconductor device having a package structure in which lead terminals connected to electrodes on both of the upper and lower surfaces of a semiconductor chip are exposed from both of the upper and lower surfaces and side surfaces of a sealing body formed of resin, electrodes of the semiconductor chip and the lead terminals are connected by Pb-free connection parts each having a configuration of connection layer/stress buffer layer/connection layer. In each connection part, the connection layer is formed of an inter-metallic compound layer having a melting point of 260° C. or higher or Pb-free solder having a melting point of 260° C. or higher, and the stress buffer layer is formed of a metal layer having a melting point of 260° C. or higher and having a function to buffer the thermal stress.

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