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    • 9. 发明专利
    • Compound for resist and resist composition
    • 化合物和抗蚀剂组合物
    • JP2012118551A
    • 2012-06-21
    • JP2012006153
    • 2012-01-16
    • Mitsubishi Gas Chemical Co Inc三菱瓦斯化学株式会社
    • ECHIGO MASATOSHIOGURO MASARU
    • G03F7/027C07C43/225C07C69/54C07D303/27G03F7/004G03F7/038H01L21/027
    • C07C43/225C07D303/22G03F7/027G03F7/028G03F7/091
    • PROBLEM TO BE SOLVED: To provide a resist composition having high sensitivity, with which a resist pattern with high resolution can be prepared and a semiconductor device having a high integration degree can be manufactured with high productivity, and to provide a compound that can be used for the composition.SOLUTION: The resist composition contains at least one kind of a resist compound (A): (a) which is produced by reacting a reagent for introduction of a crosslinking reactive group capable of directly or indirectly inducing a crosslinking reaction upon exposure to any radiation selected from the group consisting of visible light, ultraviolet light, excimer laser, extreme ultraviolet (EUV), electron beam, X-ray and ion beam with a polyphenol compound produced by a condensation reaction between a 5-45C aromatic ketone or aromatic aldehyde and a 6-15C compound having 1 to 3 phenolic hydroxyl groups; (b) which has a molecular weight of 300 to 5000; and (c) which includes at least one kind of the above described crosslinking reactive group.
    • 解决问题:为了提供具有高灵敏度的抗蚀剂组合物,通过该抗蚀剂组合物可以制备高分辨率的抗蚀剂图案,并且可以以高生产率制造具有高集成度的半导体器件,并且提供一种化合物, 可用于组合。 抗蚀剂组合物含有至少一种抗蚀剂化合物(A):(a)其通过使用于引入可直接或间接地引发交联反应的交联反应性基团的试剂暴露于 选自由可见光,紫外光,准分子激光,极紫外(EUV),电子束,X射线和离子束组成的组中的任何辐射与通过5-45C芳族酮或芳族化合物之间的缩合反应产生的多酚化合物 醛和具有1〜3个酚羟基的6-15C化合物; (b)其分子量为300〜5000; 和(c)包括至少一种上述交联反应性基团。 版权所有(C)2012,JPO&INPIT