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    • 2. 发明专利
    • Electric stringed instrument
    • 电子仪器
    • JP2004144774A
    • 2004-05-20
    • JP2002306105
    • 2002-10-21
    • Yamaha Corpヤマハ株式会社
    • NAKATANI HIROSHITAMURA SHINYAHASEBE MAMORU
    • G10D1/02G10D3/04G10H1/00G10H3/18
    • PROBLEM TO BE SOLVED: To provide a violin type electric stringed instrument capable of a proper musical sound signal without performing any filter processing or, if any, minimizing filter processing. SOLUTION: The violin type electric stringed instrument is equipped with a musical instrument main body 1 where a bridge is arranged at an intermediate part and strings are tensed, and a pickup part provided to the musical instrument main body to detect vibrations of the musical instrument main body accompanying string vibration.The instrument is characterized in that a mass body 16 for timbre variation is fitted at either of the base end of the neck 3 of the musical instrument main body or a saddle equivalent part 5. COPYRIGHT: (C)2004,JPO
    • 要解决的问题:提供能够具有适当音乐声音信号的小提琴式电弦乐器,而不进行任何过滤器处理,或者如果有的话,最小化滤波器处理。 解决方案:小提琴式电动弦乐器配备有乐器主体1,其中桥被布置在中间部分并且琴弦被拉紧,拾音部分提供给乐器主体以检测振动 伴奏弦乐器的乐器主体。仪器的特征在于,用于音色变化的质量体16安装在乐器主体的脖子3的基端或鞍座等效部5的任一个处。 (C)2004,JPO
    • 3. 发明专利
    • RADICAL REACTION APPARATUS
    • JPH03278529A
    • 1991-12-10
    • JP7937390
    • 1990-03-28
    • YAMAHA CORP
    • NAKATANI HIROSHI
    • C23F4/00H01L21/302H01L21/3065
    • PURPOSE:To obtain a novel apparatus which can control ashing or etching characteristic simply by installing a magnetic-field application means which applies a static magnetic field in the direction perpendicular to the plane of a wafer and whose intensity is variable. CONSTITUTION:At a radical reaction apparatus which houses, inside a treatment chamber 10, a wafer 14 having a part to be treated and which ashes or etches, by means of a radical reaction, the part to be treated, a magnetic-field application means 20 which applies a static magnetic field in the direction perpendicular to the plane of the wafer 14 and whose intensity is variable is installed. For example, an electromagnet 20 provided with magnetic poles 20a and 20b which are arranged so as to sandwich a treatment chamber 10 from the upper part and the lower part is installed; an exciting current is supplied to the electromagnet 20 from a DC power supply E via a variable resistance VR; a line of magnetic force B is generated in the direction perpendicular to the plane 14 between the magnetic poles 20a and 20b. The intensity of a magnetic field exerted on the wafer 14 is made variable within a range of, e.g. 0 to 10000 G on the basis of an ON/OFF operation of the power supply E and an operation of the variable resistance VR.
    • 6. 发明专利
    • MANUFACTURE OF SEMICONDUCTOR DEVICE
    • JPH08250407A
    • 1996-09-27
    • JP8082395
    • 1995-03-13
    • YAMAHA CORP
    • NAKATANI HIROSHI
    • G03F7/20H01L21/027
    • PURPOSE: To form a resist pattern in accordance with designed values on a substrate surface having a stepped-height-difference by providing a mask part, whose. mask size is deviated from a designed value, on a reticle during an exposure step for a stepped surface which is not focused and by carrying out a plurality of exposures focused in accordance with the stepped surfaces and one development. CONSTITUTION: A first exposure is carried out with a stepped surface A from among at least two stepped surfaces A, B being focused. A reticle 20a used during this first exposure has a mask part 21a with a designed width value X on the part facing the stepped surface A. At that time, the part facing the stepped surface B not focused is provided with a mask part 22a having a width X+dX larger than the designed value X. A second exposure is carried out with the stepped surface B being focused. A second reticle 20b has a mask part 22b with the designed width value X. Further, a mask part 21b has a width X+dX larger than the designed value X.
    • 8. 发明专利
    • WIRING FORMING METHOD
    • JP2002124518A
    • 2002-04-26
    • JP2001311167
    • 2001-10-09
    • YAMAHA CORP
    • TAWARA TAKASHINAKATANI HIROSHI
    • H01L21/302H01L21/3065H01L21/3213
    • PROBLEM TO BE SOLVED: To improve the dimensional accuracy of a wiring pattern. SOLUTION: The wiring forming method comprises a step for forming a wiring layer 14 of WSi2, etc., on an insulation film 12 covering the surface of a semiconductor substrate 10, forming a first TiN antireflective film and a second organic antireflective film 18 of acrylic resin, etc., on the layer 14, forming resist layers 20a-20c on the film 18, dry etching the film 18 with the layers 20a-20c used as a mask, dry etching the film 16 with the rest of the layers 20a-20c and the film 18 used as a mask, dry etching the film 14 with the rest of the layers 20a-20c and the films 16, 18 used as a mask, and removing the rest of the layers 20a-20c and the film 18 with leaving a resulting laminate including the rest of the layer 14 and the film 16 as a wiring layer. After etching the film 16 and then removing the rest of the layers 20a-20c and the film 18, the film 14 may be etched with the rest of the film 16 used as a mask.
    • 9. 发明专利
    • DRY ETCHING METHOD
    • JPH1092774A
    • 1998-04-10
    • JP26248296
    • 1996-09-11
    • YAMAHA CORP
    • NAKATANI HIROSHI
    • H01L21/302H01L29/78
    • PROBLEM TO BE SOLVED: To improve the anisotropy of etching in a dry etching method. SOLUTION: A Si layer 14, 1 Wsi layer 16 and a TiN layer 18 are sequentially formed on an insulating film 12a covering the surface of a semiconductor substrate 10. Then, a resist layer 20 is formed on the layer 18 in accordance with a gate electrode pattern. The volatilization of solvent in resist is promoted and the amount of the molecules of resist resin is increased by photo- crosslinking reaction by executing a baking processing while the layer 20 is irradiated with far ultraviolet radiation 22. The layer 18 is dry-etched by chlorine gas with the layer 20 as a mask and the stacking of the layers 14 and 16 is dry-etched by chlorine gas containing oxygen with the layer 20 and the remaining part of the layer 18 as the masks. At that time, an oxide film is efficiently formed on the remaining sidewall of the layer 18 and a carbon system polymer film on the sidewall of a part to be etched. Thus, an etching form with satisfactory anisotropy can be obtained.
    • 10. 发明专利
    • EXPOSURE OF SEMICONDUCTOR WAFER
    • JPH08250406A
    • 1996-09-27
    • JP8082295
    • 1995-03-13
    • YAMAHA CORP
    • NAKATANI HIROSHI
    • G03F7/20G03F7/207G03F9/00H01L21/027
    • PURPOSE: To carry out an optimum exposure by specifying a stepped surface to be automatically focused in accordance with each step for forming a device and by correcting the autofocus-point with an offset value, which offset value being a difference between an average height and the stepped surface height to be focused. CONSTITUTION: A stage 4 is scan-driven by a step-control driving part 9 and surface height information in its chip region is sampled. Then, a stepped surface height B to be focused in a chip region to be exposed to light is extracted from the distribution of the sampled height information. Then, a main CPU 10 calculates B-A as an offset value from an average height A of a plurality of autofocus-points obtained previously and a stepped surface height B to be practically focused. In the exposure of each chip region, the above-mentioned offset value is given to a focus-control driving part 8, thus the autofocus-point is corrected and the exposure is carried out.