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1. 发明专利

JPS5981629A DEVICE AND METHOD FOR LIGHT GUIDE TYPE DEFLECTION 失效
公开(公告)号：JPS5981629A
公开(公告)日：1984-05-11
申请号：JP19293182
申请日：1982-11-01
申请人： YASU SEIJI , TOUWA GIKEN KK
发明人： YASU SEIJI
IPC分类号： G02B6/12 , G02F1/295
摘要： PURPOSE:To vary and angle of deflection speedily at random without requiring a high voltage by deflecting beam light according the level of an electrode applied voltage while the beam light propagates in an epitaxial layer. CONSTITUTION:For example, a P type GaAs epitaxial layer 2 which has positive holes at lower density than conduction electron density is grown on an N type GaAs substrate 1 which has conduction electrons at the 1st density. Then, electrodes A1 and A2, and B are provided at part of the layer 2 and the reverse surface of the substrate 1. Consequently, the layer 2 has a greater refractive index than the substrate 1 against to beam light which has specific wavelength and a specific diameter when incident to a specific incidence point. When no voltage is applied between the electrodes of the deflector, the incident light beam propagates straight; and the propagating light beam is deflected toward the electrode A2 when a forward bias voltage is applied between the electrodes A1 and B or toward the electrode A1 when the forward bias voltage is applied between the electrodes A1 and B.

2. 发明专利

JPS5681994A FIELD EFFECT TYPE SEMICONDUCTOR LASER AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS5681994A
公开(公告)日：1981-07-04
申请号：JP15946079
申请日：1979-12-07
申请人： YASU SEIJI , TOWA GIKEN KK
发明人： YASU SEIJI
IPC分类号： H01L29/80 , H01L21/208 , H01L21/337 , H01L27/098 , H01L29/808 , H01S5/00 , H01S5/062 , H01S5/22 , H01S5/227
摘要： PURPOSE:To enable direct control of oscillating state in the laser by varying a voltage applied to the laser element. CONSTITUTION:Only the center of the semiconductor layers 2-5 grown epitaxially are retained in stripe state, and are mesa etched, and thereafter p type Ga1-zAlzAs buried layer 6 is epitaxially grown on a crystalline substrate 1 at the part removed by etching. An n type GaAs buried layer 7 is epitaxially grown on the layer 6, and is aligned with a cap layer 5. Thereafter, source electrode S, is formed under the substrate 1, and a drain electrode D is formed on the layer 5. A gate electrode G is formed on an n type GaAs buried layer 7 in predetermined interval with both ends of the drain electrode D. With the above steps, the semiconductor laser can be constructed. When the gate applied voltage is increased higher than the drain voltage, the laser light can be stopped in oscillation.

3. 发明专利

JPS5690586A SEMICONDUCTOR LASER AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS5690586A
公开(公告)日：1981-07-22
申请号：JP16699479
申请日：1979-12-21
申请人： YASU SEIJI , TOWA GIKEN KK
发明人： YASU SEIJI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/223
摘要： PURPOSE:To facilitate an efficiency of light emittance by a method wherein a layer except a central part of active layer is made to be a vacant layer, a laser oscillation sheath value is reduced, and (OI stability 1) plane is applied as a laser reflection plane and a laser beam is affectively enclosed in the active layer. CONSTITUTION:N type GaAs 1 is applied, (OI stability 1) plane is selected as a laser light reflecting surface, and a reflective index is reduced by the outer impressing electric field, N type Ga1-zAlz As 2 (Z=0.3-0.5) having a low reflective index is arragned on the base plate 1, a central part is left to form P layer 3. Then, N type GaAs active layer 4 with about 0.15mum and P type Ga1-muAlmuAs (Cu=0.3- 0.5) 5 are arranged to form a double hetero structure, P type GaAs layer 6 is overlapped to form an ohm-type electrode 8, and an ohm-type electrode 7 is also attached to the base plate 1. With this arrangement, when a voltage is applied between the electrodes 8 and 7, the active layer on P layer 3 is made to be vacant, an electric currnt is effectively concentrated at the central part to cause the oscilation sheath value to be reduced. Since an opening plane (OI stability 1) is applied as a reflection plane, the vacant layer has a low reflection index and a reflection index in the active area is made to be relatively large, a light is effectively enclosed to improve an efficiency of light emittance.

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