PURPOSE:To facilitate an efficiency of light emittance by a method wherein a layer except a central part of active layer is made to be a vacant layer, a laser oscillation sheath value is reduced, and (OI stability 1) plane is applied as a laser reflection plane and a laser beam is affectively enclosed in the active layer. CONSTITUTION:N type GaAs 1 is applied, (OI stability 1) plane is selected as a laser light reflecting surface, and a reflective index is reduced by the outer impressing electric field, N type Ga1-zAlz As 2 (Z=0.3-0.5) having a low reflective index is arragned on the base plate 1, a central part is left to form P layer 3. Then, N type GaAs active layer 4 with about 0.15mum and P type Ga1-muAlmuAs (Cu=0.3- 0.5) 5 are arranged to form a double hetero structure, P type GaAs layer 6 is overlapped to form an ohm-type electrode 8, and an ohm-type electrode 7 is also attached to the base plate 1. With this arrangement, when a voltage is applied between the electrodes 8 and 7, the active layer on P layer 3 is made to be vacant, an electric currnt is effectively concentrated at the central part to cause the oscilation sheath value to be reduced. Since an opening plane (OI stability 1) is applied as a reflection plane, the vacant layer has a low reflection index and a reflection index in the active area is made to be relatively large, a light is effectively enclosed to improve an efficiency of light emittance.