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1. 发明专利

JPH10149982A SURFACE-TREATING DEVICE FOR PHOTORESIST 失效
公开(公告)号：JPH10149982A
公开(公告)日：1998-06-02
申请号：JP35338796
申请日：1996-11-20
申请人： USHIO ELECTRIC INC
发明人： ISO SHINICHI , MATSUNO HIROMITSU , IGARASHI RYUSHI , KAMEDA SHINJI
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a surface-treating device which can only reform the surface of a photoresist applied to a silicon substrate, etc. SOLUTION: A surface-treating device only reforms the surface of a photoresist by irradiating the surface with vacuum ultraviolet rays having a wavelength of 172nm from excimer lamps 1 (1a, 1b, 1c,...) utilizing dielectric barrier discharge of in a tube wall load without substantially causing any reaction between ultraviolet rays having wavelengths which do not fall within the range of 170-200nm and the photoresist. The device also irradiates the photoresist with vacuum ultraviolet rays having a wavelength of 185nm and ultraviolet ryas having a wavelength of 185nm emitted from low-pressure mercury lamps through an optical filter which transmits more ultraviolet rays having the wavelength of 185nm than those having a wavelength of 254nm so that the intensity of the vacuum ultraviolet rays having the wavelength of 185nm can become 10 times or more stronger than that of the ultraviolet rays having the wavelength of 254nm on the surface of the photoresist. A high AC voltage is applied across the device so that the device can repeat discharge generating periods for emitting the ultraviolet rays and no-discharge generating periods (Tb).

2. 发明专利

JPH09302326A ULTRAVIOLET LIGHT-RESISTANT MATERIAL, ULTRAVIOLET LIGHT IRRADIATION DEVICE AND ULTRAVIOLET LIGHT TREATING DEVICE 失效
公开(公告)号：JPH09302326A
公开(公告)日：1997-11-25
申请号：JP11904696
申请日：1996-05-14
申请人： USHIO ELECTRIC INC
发明人： ISO SHINICHI , HISHINUMA NOBUYOSHI
IPC分类号： G21K5/00 , B01J19/12 , C08G65/38 , C08G65/40 , C09K3/00 , H01J65/00 , H01J65/04
摘要： PROBLEM TO BE SOLVED: To obtain an ultraviolet light-resistant material extremely slight in occurrence of reaction product even when arranged under environment in which ultraviolet light having >=200nm wavelength is irradiated and provide an ultraviolet light irradiation device capable of providing long service life by prevention of stain of lamp surface and provide an ultraviolet light treating device in which ultraviolet light irradiation treatment of a material to be treated is attained without causing stain or damage of the material to be treated. SOLUTION: This ultraviolet light resistant material comprises polyetheretherketone. This ultraviolet light device arranges a member 35 comprising polyetheretherketone in a place in which vacuum ultraviolet light from a lamp 20 in a lamp housing chamber housing a lamp 20 therein is irradiated. This ultraviolet light treating device is arranged with members 35 and 45 comprising polyetheretherketone in a place in which vacuum ultraviolet light in a lamp-housing chamber and/or ultraviolet light treating chamber T is irradiated.

3. 发明专利

JPH08236492A OPTICAL CLEANING METHOD 失效
公开(公告)号：JPH08236492A
公开(公告)日：1996-09-13
申请号：JP6011895
申请日：1995-02-24
申请人： USHIO ELECTRIC INC
发明人： ISO SHINICHI , MATSUNO HIROMITSU , IGARASHI RYUSHI , SUGAWARA HIROSHI , HIRAMOTO TATSUMI
IPC分类号： B08B7/00 , H01L21/302 , H01L21/304 , H01L21/3065
摘要： PURPOSE: To improve th cleaning efficiency of an optical cleaning method and, at the same time, to reduce the damage to an object to be cleaned by ultraviolet rays or heat by turning on and turning off ultraviolet lamps while the object is cleaned by repeatedly turning on and turning off the power source of the ultraviolet lamps. CONSTITUTION: About five dielectric barrier discharge lamps 4 which are composed of ultraviolet lamps are arranged closely to an object 8 to be cleaned in a cleaning duct 3 while the lamps 4 are connected in parallel with one power source 10 and the object 8 is supported by a supporting jig 5. The object 8 is cleaned by using such an irradiating device by turning on and turning off the lamps 4 while the object 8 is cleaned by repeatedly turning on and turning off the power source 10. When the lamps 4 are turned on, the object 8 is cleaned by the same action as that of the prior art optical cleaning. In addition, even when the lamps 4 are turned off, the object 8 is cleaned, because contaminants are decomposed as a result of a reaction between the contaminants and the active oxygen species remaining in the duct 3. Therefore, the object 8 can be cleaned with a cleaning efficiency which is higher than that obtained when the lamps 4 are continuously turned on. In addition, the object 8 is not damage by heat, because the temperatures of the lamps 4 do not rise.

4. 发明专利

JPH07196303A METHOD FOR OXIDIZING MATERIAL TO BE TREATED 失效
公开(公告)号：JPH07196303A
公开(公告)日：1995-08-01
申请号：JP29199994
申请日：1994-11-02
申请人： USHIO ELECTRIC INC
发明人： HIRAMOTO TATSUMI , IGARASHI RYUSHI , MATSUNO HIROMITSU , MATSUSHIMA TAKEO , ISO SHINICHI
IPC分类号： B08B7/00 , B01J19/12 , B05D3/06 , C01B13/10 , C01B13/14
摘要： PURPOSE:To provide a method for oxidizing a material to be treated, having quick treating speed by producing a high-concentration ozone. CONSTITUTION:Vacuum ultraviolet rays radiated from a dielectric barrier discharge lamp 100 in which xenon gas is included are irradiated into a fluid containing oxygen to produce ozone and an active oxidizing decomposed material due to photochemical reaction, and this ozone and the active oxidizing decomposed material are brought into contact with the surface of a material to be treated to oxidize the surface of the material 9 to be treated. The active oxidizing decomposed material is also produced and the activity of the material is further increased by combinedly using far-ultraviolet light source. As a result, the treating rate can further be accelerated.

5. 发明专利

JPH07179629A METHOD FOR MODIFYING PLASTIC SURFACE 失效
公开(公告)号：JPH07179629A
公开(公告)日：1995-07-18
申请号：JP34465893
申请日：1993-12-21
申请人： USHIO ELECTRIC INC
发明人： HIRAMOTO TATSUMI , IGARASHI RYUSHI , MATSUNO HIROMITSU , MATSUSHIMA TAKEO , ISO SHINICHI
IPC分类号： C08J7/00
摘要： PURPOSE:To improve the rate of surface modification by allowing a dielectric barrier discharge lamp which uses a part or the whole of the enclosure of a radiating space as a radiation outlet to radiate while keeping the smallest thickness of a water layer, the shortest radiation passage distance, below a specified value. CONSTITUTION:A sheet 109 of a plastic having C-F bonds (e.g. a polyfluoroethylene) or C-H bonds (e.g. PP) is caused to pass through near the liq. level 23 while the temp. of a radiation outlet in a water tank 21 contg. water 22 is kept at 250 deg.C or lower with a cooling medium 25. The surface of the sheet thus passing through is modified by exposing it ti vacuum ultraviolet rays with wavelengths of 160-200mum emitted from a dielectric barrier discharge lamp 105 sealed with Xe or a gas mainly comprising Xe at a tube wall load of 0.2W/cm or higher while the smallest thickness of the water layer, the shortest radiation passage distance, on the top 13 of the radiation outlet of the lamp 105 is kept at 5mum or lower. When the sealed gas is Ar/Cl2 or a Cl compd., the distance is kept at 20mum or lower; when the gas is Ar/F or an F compd., to 2,000mum or lower.

6. 发明专利

JPH07179628A METHOD FOR MODIFYING PLASTIC SURFACE 失效
公开(公告)号：JPH07179628A
公开(公告)日：1995-07-18
申请号：JP34465793
申请日：1993-12-21
申请人： USHIO ELECTRIC INC
发明人： HIRAMOTO TATSUMI , IGARASHI RYUSHI , MATSUNO HIROMITSU , MATSUSHIMA TAKEO , ISO SHINICHI
IPC分类号： C08J7/00
摘要： PURPOSE:To improve the rate of surface modification by allowing a dielectric barrier discharge lamp which uses a part or the whole of the enclosure of a radiating space as a radiation outlet to radiate while keeping the thickness of an aq. soln, layer, the shortest radiation passage distance, below a specified value. CONSTITUTION:A sheet 109 of a plastic having C-F bonds (e.g. a polyfluoroethylene) is passed through near the liq. level 23 while the temp. of a radiation outlet in a water tank 21 contg. an aq. soln. 22 of an Al compd. [e.g. Al(OH)3] or a B compd. (e.g. H3BO3) is kept at 250 deg.C or lower with a cooling medium 25. The surface of the sheet thus passing through is modified by exposing it to rays of radiation with wavelengths of 160-200mu emitted from an dielectric barrier discharge lamp 105 sealed with Xe or a gas mainly comprising Xe at as tube wall load of 0.2W/cm while the smallest thickness of the liq. layer, the shortest radiation passage distance, on the top 13 of the radiation outlet of the lamp 105 is kept at 5mum or lower. When the sealed gas is Ar/Cl2 or a Cl compd., the distance is kept at 20mum or lower; when the sealed gas is Ar/F or an F compd., at 2,000mum or lower.

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