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1. 发明专利

JP2000234178A METHOD OF FEEDING WORKING SOLUTION IN WHICH CARBON POWDER IS DISPERSED AND FORMING COATING FILM OF METALLIC CARBIDE ON FACE TO BE WORKED BY DISCHARGE USING METALLIC ELECTRODE 失效
公开(公告)号：JP2000234178A
公开(公告)日：2000-08-29
申请号：JP3544699
申请日：1999-02-15
申请人： IBIDEN CO LTD , UNO YOSHIYUKI
发明人： UNO YOSHIYUKI , OKADA AKIRA , HIRAO KAZUHISA , TAKAGI TAKASHI
IPC分类号： B23H1/06 , B23H1/08 , B23H9/00 , C23C26/00
摘要： PROBLEM TO BE SOLVED: To form a hard coating layer composed of metallic carbide small in surface roughness on the surface to be worked by using metal bonded with carbon and forming carbide excellent in wear resistance as an electrode, feeding a high polymer compd. or mineral oil mixed with carbon powder as a working soln. and executing discharge in the working soln. SOLUTION: As the metallic electrode, Ti is preferably used, but, W, V, Ta, Nb or the like ordinarily used for the formation of a hard film may be utilized. As the working soln., more concretely, hydrocarbon mineral oil and a high polymer compd. soln. of glycerol or the like may be used. The concn. of the carbon powder to be added to the working soln. is preferably controlled to 1 to 30 g/l to the volume of the working soln. Furthermore, the average particle size of the carbon powder is preferably controlled to

2. 发明专利

JPH09290326A CARBON ELECTRODE 失效
公开(公告)号：JPH09290326A
公开(公告)日：1997-11-11
申请号：JP13093896
申请日：1996-04-25
申请人： UNO YOSHIYUKI , IBIDEN CO LTD
发明人： UNO YOSHIYUKI , OKADA AKIRA , NAKANISHI HIROTO , KAKU JIYOUNEI , TAKAGI TAKASHI
IPC分类号： B23H1/04 , B01D65/02 , B23H1/06 , C02F1/44
摘要： PROBLEM TO BE SOLVED: To provide a carbon electrode which can restrain the electrode wear and tear at the electric discharge machining time and electric discharge machine a work piece with a high accuracy. SOLUTION: In this carbon electrode 7 consisting of a piled and grown thermal decomposition carbon, the electrode surface 71 for electric discharge machining is made by an orthogonal surface to the piled and grown surface of the thermal decomposition carbon. This carbon electrode 7 is composed of a columnar carbon base material 2 and the piled layer 1 of the thermal decomposition carbon formed in an annual ring shape around a carbon base material and it is better that the electrode surface for electric discharge machining is made by the cut surface cut in the radius direction 21 of the carbon base material. The carbon base material is, for example, a carbon fiber.

3. 发明专利

JP2014119398A Nuclear reactor member 有权
标题翻译：核反应堆成员
公开(公告)号：JP2014119398A
公开(公告)日：2014-06-30
申请号：JP2012276317
申请日：2012-12-19
申请人： Ibiden Co Ltd , イビデン株式会社
发明人： HAN MINGXU , TAKAGI TAKASHI
IPC分类号： G21C5/00 , G21C11/02 , G21F3/00
CPC分类号： G21C5/126 , G21C11/028 , G21F1/12 , Y02E30/40
摘要： PROBLEM TO BE SOLVED: To provide a nuclear reactor member capable of being stably used without generating swelling and creep-deformation, etc., even when directly exposed to neutrons without improving operating conditions and devices of a nuclear reactor.SOLUTION: A nuclear power member includes: a core part consisting of an aggregate of a graphite granular material; and a cover layer covering a core part and consisting of a ceramic dense body. Graphite affected by neutron irradiation is used in the state of an aggregate of a granular material and does not affect a shape and size of the nuclear reactor member even when swelling and creep deformation, etc., are generated since the granular materials are not bonded to each other. The nuclear reactor member has a cover layer covering a core part and consisting of the ceramic dense body. Since the cover layer consisting of the dense body has durability higher than that of the graphite to neutron-irradiation, the shape and size of the nuclear reactor member are hardly affected.
摘要翻译：要解决的问题：即使直接暴露于中子而不改善核反应堆的操作条件和装置，也能够稳定地使用能够稳定地使用的核反应堆构件。解决方案：核能构件包括：由石墨颗粒材料的聚集体组成的芯部分; 以及覆盖芯部并由陶瓷致密体构成的覆盖层。受中子照射影响的石墨以粒状材料的聚集体的状态使用，即使发生膨胀和蠕变变形等，也不影响核反应堆构件的形状和尺寸，因为颗粒材料不粘合到彼此。核反应堆构件具有覆盖核心部分并由陶瓷致密体构成的覆盖层。由于由致密体构成的覆盖层具有比石墨对中子照射的耐久性更高的耐久性，所以核反应堆构件的形状和尺寸几乎不受影响。

4. 发明专利

JP2007012933A Semiconductor manufacturing device and component therefor 审中-公开
标题翻译：半导体制造设备及其组件
公开(公告)号：JP2007012933A
公开(公告)日：2007-01-18
申请号：JP2005192953
申请日：2005-06-30
申请人： Ibiden Co Ltd , イビデン株式会社
发明人： TAKAGI TAKASHI , NORO TADASHI
IPC分类号： H01L21/205 , C04B35/52 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a member for a semiconductor manufacturing device which is capable of manufacturing a semiconductor of high quality or the like. SOLUTION: The semiconductor manufacturing device 10 has a susceptor 12 for mounting a substrate 19 inside a reaction container 11, and a heater 13 for heating the susceptor 12. The susceptor 12 is formed of a carbon material, and a thermally decomposed carbon layer is formed on at least a surface exposed to raw gas introduced from a gas introduction tube 14a. A wetting tension of the surface exposed to the raw gas is 62 mN/m or more. Consequently, it is possible to attach particle by the raw gas to the thermally decomposed carbon layer, to prevent peeling/dispersal thereof, and to carry out cleaning without opening to the air. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够制造高质量半导体的半导体制造装置的构件等。解决方案：半导体制造装置10具有用于将反射容器11内的基板19安装的基座12和用于加热基座12的加热器13.基座12由碳材料和热分解碳至少在暴露于从气体导入管14a导入的原料气体的表面上形成层。暴露于原料气体的表面的润湿张力为62mN / m以上。因此，可以将原料气体的粒子附着在热分解碳层上，防止其剥离/分散，并且不会对空气进行开放而进行清洗。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2002222768A JIG FOR SEMICONDUCTOR 失效
公开(公告)号：JP2002222768A
公开(公告)日：2002-08-09
申请号：JP2001016243
申请日：2001-01-24
申请人： IBIDEN CO LTD
发明人： NORO TADASHI , TAKAGI TAKASHI
IPC分类号： C30B29/06 , H01L21/205 , H01L21/26
摘要： PROBLEM TO BE SOLVED: To provide a jig for a semiconductor, which can raise the quality of a heat-treated wafer. SOLUTION: A jig 1 for a semiconductor is one which is used for a heat treatment of a wafer in a semiconductor process, the jig 1 is constituted of a silicon carbide film formed by a CVD method, a wafer pocket 10, which is used as a recessed place for mounting the wafer, is provided in the top face 12 of the jig 1 and at least a light-shielding layer 13 is provided in the interior of the jig 1 so as to cover the wafer pocket 10.

6. 发明专利

JP2001203192A COMPONENT FOR SEMICONDUCTOR MANUFACTURING MACHINE AND THE MACHINE 失效
公开(公告)号：JP2001203192A
公开(公告)日：2001-07-27
申请号：JP2000013146
申请日：2000-01-21
申请人： IBIDEN CO LTD
发明人： NORO TADASHI , TAKAGI TAKASHI , SAKASHITA KEIICHI
IPC分类号： C23C16/42 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a component for a semiconductor manufacturing machine together with a semiconductor manufacturing machine using it, which is stably used for an extended period without contaminating a silicon wafer. SOLUTION: A component 1 which is used for a semiconductor manufacturing machine that used plasma comprises a base material 11 comprising silicon carbide sintered body, and a coat 12 of silicon carbide formed on the surface of base material 11 by a CVD method.

7. 发明专利

JP2001203188A COMPONENT FOR SEMICONDUCTOR MANUFACTURING MACHINE AND THE MACHINE 失效
公开(公告)号：JP2001203188A
公开(公告)日：2001-07-27
申请号：JP2000010767
申请日：2000-01-19
申请人： IBIDEN CO LTD
发明人： NORO TADASHI , TAKAGI TAKASHI , SAKASHITA KEIICHI
IPC分类号： H01L21/302 , C04B41/87 , G01N23/20 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide components for a semiconductor manufacturing device excellent in durability than before when irradiated with a plasma. SOLUTION: A part 1 which is used for a semiconductor manufacturing machine that uses a plasma comprises a base material 11 of carbon material, and a coat 12 of silicon carbon formed on the surface of base material 11 by a CVD method. Related to the coat 12, A/B is 1 or higher for an X-ray diffraction pattern, where A is a peak intensity on (111) surface while B is a peak intensity on (220) surface.

8. 发明专利

JPH11223119A SILENCER FOR INTERNAL COMBUSTION ENGINE 失效
公开(公告)号：JPH11223119A
公开(公告)日：1999-08-17
申请号：JP4139398
申请日：1998-02-05
申请人： IBIDEN CO LTD
发明人： YAMADA KEIJI , SAKASHITA KEIICHI , FUKUSHIMA KOJI , MINOURA SEIJI , KATO HIDEKI , TAKAGI TAKASHI
IPC分类号： F01N1/24
摘要： PROBLEM TO BE SOLVED: To provide a silencer for an internal combustion engine to have excellent durability against heat and vibration for a long period and silencing performance. SOLUTION: A silencer 1 for an internal combustion engine comprises an inner cylinder made of a metal having a plurality of opening parts; an inorganic noise absorbing material disposed at the periphery thereof; and a metallic shell 3 with which the outside of the noise absorbing material is covered. A substance, serving as an inorganic noise absorbing material, wherein a ceramic or a carbonaceous film is formed on the surface of a carbon fiber 4 monomer with an average fiber diameter of 5-15 μm, forms a mat-form substance having apparent density of 0.05-0.30 g/cm and is used with the film wound around an inner cylinder 2 made of a metal having a plurality of opening parts.

9. 发明专利

JPH10182288A RECEIVING TRAY MADE OF CARBON FOR APPARATUS FOR PULLING SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH10182288A
公开(公告)日：1998-07-07
申请号：JP34769796
申请日：1996-12-26
申请人： IBIDEN CO LTD
发明人： TAKAGI TAKASHI
IPC分类号： C30B15/10 , C30B15/00 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To improve safety over the entire part of a pulling up apparatus and to produce a large-diameter silicon single crystal by forming a film consisting of pyrolytic carbon on the inner side surface of a receiving tray made of carbon to prevent infiltration of a received silicon melt into the inside of a base material, thereby making it possible to prevent the occurrence of cracks and failures and preventing the failure and destruction over the entire part of the apparatus as well by the silicon melt. SOLUTION: The apparatus 100 for pulling up the silicon single crystal is constituted by rotatably housing and supporting a crucible 10 for melting the silicon into its hermetic body 50 by a revolving shaft, arranging a heater 12 for heating at the circumference of this crucible 10, arranging a heat insulating cylinder 30 made of, for example, graphite, on the outer side thereof and housing a thermal insulating material 40 between this cylinder and the hermetic body 50. The crucible 10 consists of double structures composed of a quartz crucible 11 in direct contact with the silicon melt and a graphite crucible 11a. The side plate of the receiving tray 20 made of carbon exists right under the heat insulating cylinder 30. The graphite base material is put into a CVD furnace and gaseous methane with H2 as a carrier is supplied into the furnace, by which the pyrolytic carbon film is formed on the front surface of the graphite base material.

10. 发明专利

JPH1072292A HEAT INSULATION CYLINDER FOR SILICON SINGLE CRYSTAL PULLING-UP DEVICE 失效
公开(公告)号：JPH1072292A
公开(公告)日：1998-03-17
申请号：JP22973996
申请日：1996-08-30
申请人： IBIDEN CO LTD
发明人： KATO KOJI , SATO MASAYUKI , TAKAGI TAKASHI
IPC分类号： C30B15/14 , C30B29/06 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To obtain a heat insulation cylinder having a long service life by forming a hollow-cylindrical base material of the heat insulation cylinder from a C/C composite material and coating at least an upper part of the inner surface of this hollow-cylindrical base material with a pyrolytic carbon coating film. SOLUTION: In a silicon single crystal pulling-up device, this heat insulation cylinder 30 is placed between a heater 20 for heating a crucible 10 and an insulation material 40 for preventing heat generated from the heater 20 from being transferred to the outside and used for performing heat insulation of the inside of the device. This heat insulation cylinder 30 consists of a base material 31 that has a hollow-cylindrical shape and is formed from a C/C composite material and also, a coating film 32 that consists of pyrolytic carbon and is formed on at least an upper part of the inner surface of the hollow- cylindrical base material 31.

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