专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008010270A Plasma treatment device and plasma treatment method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：JP2008010270A
公开(公告)日：2008-01-17
申请号：JP2006178399
申请日：2006-06-28
申请人： Tsukishima Kikai Co Ltd , 月島機械株式会社
发明人： NORITAKE NOBUYUKI , OGATA SATOSHI , TONAI SHUNPEI , TSUDA YUJI
IPC分类号： H05H1/46 , B65D1/00 , C23C16/505
摘要： PROBLEM TO BE SOLVED: To stabilize the quality of a film formed on the inner surface of a vessel. SOLUTION: A plasma treatment device 10 comprises: a treatment device body 11 with a bottomed cylindrical vessel W arranged therein; a high-frequency introduction means 12 introducing a high frequency into the treatment device body 11; and a treatment gas inlet pipe 13 capable of introducing treatment gas G into the vessel W arranged in the treatment device body 11. A discharge electrode 16 inserted into the vessel W in the treatment device body 11 is provided in the treatment device body 11. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了稳定形成在容器内表面上的膜的质量。解决方案：等离子体处理装置10包括：处理装置主体11，其中布置有底部圆柱形容器W; 将高频引入治疗装置主体11的高频引导装置12; 以及能够将处理气体G引入配置在处理装置主体11内的容器W的处理气体导入管13.在处理装置主体11中设置插入处理装置主体11内的容器W的放电电极16。 P>版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2012041641A Vacuum film deposition system, method for vacuum-depositing resin film, and resin film 有权
标题翻译：真空膜沉积系统，真空沉积树脂膜的方法和树脂膜
公开(公告)号：JP2012041641A
公开(公告)日：2012-03-01
申请号：JP2011260098
申请日：2011-11-29
申请人： Tsukishima Kikai Co Ltd , 月島機械株式会社
发明人： IIDA RYUICHI , MARUTA KAZUHIKO , TONAI SHUNPEI
IPC分类号： C23C14/22
摘要： PROBLEM TO BE SOLVED: To uniformly deposit a transparent conductive film such as an ITO thin film having low resistance and high transmittance at a temperature equal to or lower than the softening temperature of a resin film at high rate at relatively low cost.SOLUTION: A resin film F wound around a film deposition roller 10 is arranged on an upper part in a vacuum vessel 1 with its film-deposited surface S being downwardly. An evaporation source 5 in which an evaporation material is evaporated by an electron beam gun 4, and a plasma emission source 7 for irradiating material vapor A of the vapor deposition material evaporated in the evaporation source 5 with plasma B are arranged on a lower part in the vacuum vessel 1 so as to be opposite to the film-deposited surface S. The plasma emission source 7 is arranged with a spacing from a virtual plane R including the axis O of the film deposition roller 10 and extending in the vertical direction.
摘要翻译：要解决的问题：以相对较低的成本以高速率在等于或低于树脂膜的软化温度的温度下均匀沉积具有低电阻和高透射率的ITO薄膜的透明导电膜。解决方案：卷绕在成膜辊10周围的树脂膜F布置在真空容器1的上部，其膜沉积表面S向下。其中通过电子束枪4蒸发蒸发材料的蒸发源5和用于用在等离子体B中蒸发在蒸发源5中蒸发的气相沉积材料的材料蒸气A的等离子体发射源7设置在下部真空容器1与膜沉积表面S相对。等离子体发射源7与包括成膜辊10的轴线O并在垂直方向上延伸的虚拟平面R间隔布置。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2009062597A Vacuum film deposition system, method for vacuum-depositing resin film, and resin film 有权
标题翻译：真空膜沉积系统，真空沉积树脂膜的方法和树脂膜
公开(公告)号：JP2009062597A
公开(公告)日：2009-03-26
申请号：JP2007232946
申请日：2007-09-07
申请人： Tsukishima Kikai Co Ltd , 月島機械株式会社
发明人： IIDA RYUICHI , MARUTA KAZUHIKO , TONAI SHUNPEI
IPC分类号： C23C14/22 , B32B15/08
摘要： PROBLEM TO BE SOLVED: To uniformly deposit a transparent conductive film such as an ITO thin film having lower resistance and higher permeability at a temperature equal to or lower than the softening point of a resin film at a relatively low cost at a high speed.
SOLUTION: Disclosed is a vacuum film deposition system where, at the upper part in a vacuum vessel 1, a resin film F wound round a film deposition roller 10 is arranged with the face S to be film-deposited downward, and, at the lower part in the vacuum vessel 1, an evaporation source 5 evaporating a vapor deposition material by an electron beam gun 4 and a plasma release source 7 emitting plasma B toward the material vapor A of the vapor deposition material evaporated in the evaporation source 5 are arranged so as to be confronted to the face S to be film-deposited, and the plasma release source 7 is arranged at intervals from a vertical plane R elongating to a vertical direction including the axis O of the film deposition roller 10.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：在相对较低成本的树脂膜的软化点以下的温度下，以高的方式均匀地沉积具有较低电阻和较高磁导率的ITO薄膜的透明导电膜速度。解决方案：公开了一种真空膜沉积系统，其中在真空容器1的上部设置有卷绕在成膜辊10上的树脂膜F，其中面S被膜下沉，在真空容器1的下部，蒸发源5通过电子束枪4蒸发蒸镀材料和将等离子体B朝向蒸发源5中蒸发的气相沉积材料的材料蒸气A发射的等离子体释放源7 被布置成面对要被膜沉积的面S，并且等离子体释放源7从包括成膜辊10的轴线O的垂直方向延伸的垂直面R间隔布置。
版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2007314827A Plasma treatment apparatus and plasma treatment method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：JP2007314827A
公开(公告)日：2007-12-06
申请号：JP2006144132
申请日：2006-05-24
申请人： Tsukishima Kikai Co Ltd , 月島機械株式会社
发明人： TONAI SHUNPEI , NORITAKE NOBUYUKI , TSUDA YUJI , OGATA SATOSHI
IPC分类号： C23C16/52
摘要： PROBLEM TO BE SOLVED: To accurately monitor a state of plasma in a container, while a film is formed.
SOLUTION: The plasma treatment apparatus 10 comprises: a raw gas introduction pipe 13 for introducing a raw gas G into a cylindrical container W with a bottom; an electromagnetic radiation means 12 for irradiating the raw gas G in the container W with an electromagnetic wave from outside the container W to convert the raw gas G into plasma; and a monitoring means 17 which makes a photoreceptor face 17a receive a plasma light generated in the container W and monitors the state of the plasma in the container W based on the obtained light signal. The plasma treatment apparatus 10 monitors the state of the plasma in the container W through the monitoring means 17 while forming a film in the inside of the container W by using the plasma converted from the raw gas G in the container W. The raw gas introduction pipe 13 is formed so that the inner part can communicate with the inner part of the container W through the top opening part 13a. The photoreceptor face 17a is arranged so as to receive the plasma light from the top opening part 13a through the inside of the raw gas introduction part 13.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了精确地监测容器中的等离子体的状态，同时形成膜。解决方案：等离子体处理装置10包括：原料气体导入管13，用于将原料气体G引入具有底部的圆筒形容器W中; 电磁辐射装置12，用于从容器W外部用电磁波照射容器W中的原料气体G，将原料气体G转化为等离子体; 以及监视装置17，其使感光体面17a接收在容器W中产生的等离子体光，并基于获得的光信号监视容器W中的等离子体的状态。等离子体处理装置10通过监视装置17监视容器W中的等离子体的状态，同时通过使用从容器W中的原料气体G转换的等离子体在容器W的内部形成膜。原料气体导入管13形成为使得内部能够通过顶部开口部13a与容器W的内部连通。感光体面17a被布置成从原始气体导入部13的内部接收来自顶部开口部13a的等离子体光。（C）2008，JPO＆INPIT

5. 发明专利

JP2008010271A Microwave plasma treatment device and microwave plasma treatment method 有权
标题翻译：微波等离子体处理装置和微波等离子体处理方法
公开(公告)号：JP2008010271A
公开(公告)日：2008-01-17
申请号：JP2006178401
申请日：2006-06-28
申请人： Tsukishima Kikai Co Ltd , 月島機械株式会社
发明人： NORITAKE NOBUYUKI , TONAI SHUNPEI , OGATA SATOSHI , TSUDA YUJI
IPC分类号： H05H1/46 , C23C16/511
摘要： PROBLEM TO BE SOLVED: To prevent the barrel of a resin vessel from being locally thermally deformed. SOLUTION: A microwave plasma treatment device 10 comprises: a treatment device body 11 with the resin vessel W arranged therein; a microwave introduction means 12 introducing microwaves into the treatment device body 11; and a treatment gas inlet pipe 13 capable of introducing treatment gas G into the resin vessel W arranged in the treatment device body 11. There are provided with a microwave transmission member 15 surrounding the barrel section W2 in the resin vessel W over the entire periphery in a state of abutting on its outer periphery surface, and a microwave transmission pipe 16 surrounding the microwave transmission member 15 over the entire periphery in the treatment device body 11. A dielectric film 16a made of a material having higher dielectric constant than a material forming the microwave transmission pipe 16 is provided over the entire outer periphery surface of the microwave transmission pipe 16. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了防止树脂容器的桶局部热变形。解决方案：微波等离子体处理装置10包括：设置有树脂容器W的处理装置主体11; 将微波引入治疗装置主体11的微波引入装置12; 以及处理气体导入管13，其能够将处理气体G引入设置在处理装置主体11中的树脂容器W.在微波传输构件15上设置有微波传输构件15，其围绕树脂容器W中的筒部W2在整个周边在其外周面上抵接的状态，以及在处理装置主体11的整个周边周围的微波传输部件15的微波传输管16.由介电常数比材料形成的材料制成的电介质膜16a 微波传输管16设置在微波传输管16的整个外周表面上。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007321235A Microwave plasma treatment system and microwave plasma treatment method 审中-公开
标题翻译：微波等离子体处理系统和微波等离子体处理方法
公开(公告)号：JP2007321235A
公开(公告)日：2007-12-13
申请号：JP2006156354
申请日：2006-06-05
申请人： Tsukishima Kikai Co Ltd , 月島機械株式会社
发明人： NORITAKE NOBUYUKI , TSUDA YUJI , TONAI SHUNPEI , OGATA SATOSHI
IPC分类号： C23C16/511 , B65D1/00 , B65D25/14 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a microwave plasma treatment system and a microwave plasma treatment method capable of preventing a resin-made container from being locally and thermally deformed during the film deposition without degrading its manufacturing efficiency. SOLUTION: A microwave propagation tube 15 for surrounding a barrel portion W2 of a resin-made container W over its entire periphery is provided in a treatment device body 11 with a space formed between a side face opposite to the barrel portion W2 of the resin-made container W out of inner faces of the treatment device body 11 and the barrel portion W2 of the resin-made container W, and a microwave propagation coating 15a consisting of a material of high dielectric constant is provided on an outer surface of the microwave propagation tube 15 over its entire circumference. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种微波等离子体处理系统和微波等离子体处理方法，其能够防止树脂制容器在膜沉积期间局部地和热变形，而不会降低其制造效率。解决方案：在处理装置主体11中设置有用于在其整个周边上围绕树脂制容器W的筒部W2的微波传播管15，其间形成有与筒部W2相对的侧面处理装置主体11的内表面和树脂制容器W的筒部W2之间的树脂制容器W和由介电常数高的材料构成的微波传播涂层15a设置在微波传播管15在其整个圆周上。版权所有（C）2008，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式