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1. 发明专利

JP2005079491A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2005079491A
公开(公告)日：2005-03-24
申请号：JP2003311007
申请日：2003-09-03
申请人： Trecenti Technologies Inc , トレセンティテクノロジーズ株式会社
发明人： AKAMATSU SHIRO , EGAWA YUICHI , FUKAMI AKIRA , OHARA HIROYUKI
IPC分类号： H01L21/66 , H01L21/3205 , H01L21/82 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which the repair of a defect of a wiring pattern can be made efficiently.
SOLUTION: A wiring pattern is formed on a semiconductor wafer (S101). Subsequently, visual inspection on the formed wiring pattern is carried out (S102). The visual inspection is performed by comparing wiring patterns between neighboring cells. Next, the kind of the defect detected by the visual inspection is discriminated (S103). The discrimination of the kind of the defect is carried out in such a way that a designed layout pattern and an actual wiring pattern are subdivided, and whether the defect is a short-circuit defect or a disconnection defect is discriminated by comparing whether a pattern exists or not in a subdivided region of the layout pattern and whether a pattern exists or not in the corresponding subdivided region of the wiring pattern. Then, the discriminated defect of the short-circuit type or the disconnection type is repaired as required. The repair is carried out by a photolithography technology using an electron-beam exposure apparatus and an etching technology.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，通过该方法可以有效地进行布线图案的缺陷的修复。解决方案：在半导体晶片上形成布线图案（S101）。随后，对形成的布线图案进行目视检查（S102）。通过比较相邻单元之间的布线图案来进行目视检查。接下来，判别通过目视检查检测到的缺陷的种类（S103）。对缺陷的种类进行区分，使得设计的布图图案和实际的布线图案被细分，通过比较图案是否存在来区分缺陷是短路缺陷还是断开缺陷或者不在布局图案的细分区域中，以及在布线图案的相应细分区域中是否存在图案。然后，根据需要修复短路型或断路型的鉴别缺陷。通过使用电子束曝光装置和蚀刻技术的光刻技术进行修复。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005050941A Semiconductor device, its manufacturing method, image sensor, and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法，图像传感器及其制造方法
公开(公告)号：JP2005050941A
公开(公告)日：2005-02-24
申请号：JP2003204201
申请日：2003-07-31
申请人： Trecenti Technologies Inc , トレセンティテクノロジーズ株式会社
发明人： FUKAMI AKIRA , EGAWA YUICHI , AKAMATSU SHIRO , OHARA HIROYUKI
IPC分类号： H01L21/66 , H01L21/8244 , H01L27/11 , H01L27/14 , H01L27/146
摘要： PROBLEM TO BE SOLVED: To provide technology obtaining characteristic information of a photodiode cell constituting a CMOS (complementary metal oxide semiconductor) image sensor in a TEG (test element group) cell. SOLUTION: In the image sensor arranging a plurality of arrays and arranging a plurality of the photodiode cells DS in each of the plurality of the arrays in the form of a matrix, one from among the plurality of the photodiode cells DS is replaced with the TEG cell TS1, and an element of the substantially same shape as an element constituting the photodiode cell DS is formed into the TEG cell TS1. The photodiode cell DS does not exist at an originally existing position by being replaced with the TEG cell TS1, and the image lacks, but it is complemented with image data of the photodiode cells DS(A)-DS(H) adjoined with the TEG cell TS1 allowing the lack. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供在TEG（测试元件组）单元中获得构成CMOS（互补金属氧化物半导体）图像传感器的光电二极管单元的特性信息的技术。解决方案：在图像传感器中排列多个阵列并且以矩阵的形式将多个阵列中的每一个阵列中的多个光电二极管单元DS布置成多个光电二极管单元DS中的一个，与TEG单元TS1形成，并且与构成光电二极管单元DS的元件基本相同形状的元件形成为TEG单元TS1。光电二极管单元DS通过用TEG单元TS1替代而不存在于最初存在的位置，并且图像缺少，但是与TEG相邻的光电二极管单元DS（A）-DS（H）的图像数据相互补充细胞TS1允许缺乏。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2004247647A Photo-diode and image sensor 审中-公开
公开(公告)号：JP2004247647A
公开(公告)日：2004-09-02
申请号：JP2003037923
申请日：2003-02-17
申请人： Trecenti Technologies Inc , トレセンティテクノロジーズ株式会社
发明人： FUKAMI AKIRA , EGAWA YUICHI , AKAMATSU SHIRO
IPC分类号： H01L27/146 , H01L31/10 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/374
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of preventing an excess leakage current in the p-n junction section of a photo-diode.
SOLUTION: p-Wells 3 and the photo-diode D
1 separated from element isolation sections 2 formed to the main surface of a semiconductor substrate 1 and composed of an n
+ -type region 4a surrounded by the p-wells 3 are formed to an active region surrounded by the element isolation sections 2. A peripheral electrode 7a composed of a silicon polycrystalline film formed on the active region from the peripheral section of the region 4a to the element isolation section 2 through a silicon oxide film 6a is arranged at a specified distance from the region 4a, and a voltage higher than the voltage applied to the region 4a is applied to the peripheral electrode 7a.
COPYRIGHT: (C)2004,JPO&NCIPI

4. 发明专利

JP2005019781A Solid-state image pickup device and manufacturing method thereof 审中-公开
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：JP2005019781A
公开(公告)日：2005-01-20
申请号：JP2003183950
申请日：2003-06-27
申请人： Trecenti Technologies Inc , トレセンティテクノロジーズ株式会社
发明人： EGAWA YUICHI , FUKAMI AKIRA
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/376
CPC分类号： H01L27/14687 , H01L27/14603 , H01L27/14609 , H01L27/148
摘要： PROBLEM TO BE SOLVED: To provide a solid-state image pickup device capable of reducing the area of a cell while maintaining a light reception area.
SOLUTION: First, a plurality of element separation regions 11 are formed on a semiconductor substrate 10; a p-type impurity is introduced into an active region between the element separation regions 11 for forming a p-type well 10a; and then a charge accumulation region 12 that is an n-type semiconductor region is formed at the deep section of the p-type well 10a by using ion implantation method, thus forming a photodiode PD at the deep section apart from the surface of the semiconductor substrate 10. Thereafter, an MIS (metal insulator semiconductor) transistor Tr 2 for charge transmission is formed at a separated upper portion in the charge accumulation region 12 and the photodiode PD and the MIS transistor Tr2 are set to be in a vertical structure.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在保持光接收区域的同时减小电池面积的固态摄像装置。解决方案：首先，在半导体衬底10上形成多个元件分离区域11; 在用于形成p型阱10a的元件分离区域11之间的有源区域中引入p型杂质; 然后通过使用离子注入法在p型阱10a的深部形成作为n型半导体区域的电荷累积区域12，从而在远离半导体的表面的深部形成光电二极管PD 此后，在电荷累积区域12中的分离的上部形成用于电荷传输的MIS（金属绝缘体半导体）晶体管Tr 2，并且将光电二极管PD和MIS晶体管Tr2设置为垂直结构。版权所有（C）2005，JPO＆NCIPI

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