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1. 发明专利

JP2005159147A Dummy wafer for chemomechanical polishing, and manufacturing method of semiconductor device 审中-公开
标题翻译：化学抛光干燥法及半导体器件的制造方法
公开(公告)号：JP2005159147A
公开(公告)日：2005-06-16
申请号：JP2003397809
申请日：2003-11-27
申请人： Trecenti Technologies Inc , トレセンティテクノロジーズ株式会社
发明人： KAWAI AKINARI , TSUCHIYAMA YOJI , AOYANAGI MASAHIRO , HAKATA KATSUHIRO
IPC分类号： H01L21/304 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To reduce the number of man-hour of re-film formation treatment based on operation of a dummy wafer in chemomechanical polishing.
SOLUTION: The number of man-hour of re-film formation treatment of a polishing surface of a dummy wafer 10 can be reduced by using the dummy wafer 10 wherein a polishing surface in dummy polishing is formed of silicon carbide. That is, since polishing wear is extremely little when compared to a method wherein a silicon oxide film is taken as a polishing surface, both a silicon oxide film removal process required for reproduction of a silicon oxide film and a film formation process can be eliminated in a dummy process of chemomechanical polishing. As for the constitution of the dummy wafer 10, not only an entire thereof can be formed of silicon carbide but also a silicon carbide film can be formed on a wafer of another raw material as a polishing surface.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：基于化学机械抛光中的虚设晶片的操作来减少再成膜处理的工时数。解决方案：通过使用虚拟抛光中的抛光表面由碳化硅形成的虚拟晶片10，可以减少虚设晶片10的抛光表面的再成膜处理的工时。也就是说，与将氧化硅膜作为研磨面的方法相比，由于抛光磨损极少，所以可以消除氧化硅膜再生所需的氧化硅膜除去工艺和成膜工序，化学机械抛光的虚拟过程。对于虚设晶片10的结构，不仅可以由碳化硅形成整体，而且可以在作为研磨面的另一原料的晶片上形成碳化硅膜。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2004356162A Manufacturing process and polishing equipment of semiconductor device 审中-公开
标题翻译：半导体器件的制造工艺和抛光设备
公开(公告)号：JP2004356162A
公开(公告)日：2004-12-16
申请号：JP2003148858
申请日：2003-05-27
申请人： Trecenti Technologies Inc , トレセンティテクノロジーズ株式会社
发明人： AOYANAGI MASAHIRO , TSUCHIYAMA YOJI
IPC分类号： B24B53/017 , B24B53/02 , H01L21/304 , B24B37/00
摘要： PROBLEM TO BE SOLVED: To enhance production yield of a semiconductor device by enhancing the polishing efficiency of a semiconductor wafer. SOLUTION: Pure water 7 is supplied from a pure water supply nozzle 8 to a polishing pad 3 by rotating a turn table 4 stuck with the polishing pad 3, a polishing head 5 for holding a semiconductor wafer 2, and a dresser 6 for dressing the polishing pad 3, respectively. The dresser 6 is lowered by means of a pressurization controller 12 to touch the polishing pad 3 thus starting dressing of the polishing pad 3. Upon elapsing a specified time after starting dressing, the polishing head 5 is lowered by means of a pressurization controller 11 and the semiconductor wafer 2 is touched to the polishing pad 3 and then polishing liquid 9 is supplied from a polishing liquid supply nozzle 10 to the polishing pad 3. Consequently, the semiconductor wafer 2 is subjected to CMP processing. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：通过提高半导体晶片的研磨效率来提高半导体器件的制造成品率。解决方案：通过旋转粘贴有抛光垫3的转台4，用于保持半导体晶片2的抛光头5和修整器6，纯水7从纯水供应喷嘴8供应到抛光垫3 分别用于修整抛光垫3。修整器6通过加压控制器12降低以接触抛光垫3，从而开始修整抛光垫3.在开始修整之后经过指定的时间后，抛光头5通过加压控制器11降低，将半导体晶片2接触到抛光垫3，然后将研磨液9从抛光液供给喷嘴10供给到抛光垫3.因此，对半导体晶片2进行CMP处理。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2004319574A Method of manufacturing semiconductor device, method and system for automatically operating semiconductor manufacturing device, and method of automatically operating cmp device 审中-公开
公开(公告)号：JP2004319574A
公开(公告)日：2004-11-11
申请号：JP2003107658
申请日：2003-04-11
申请人： Trecenti Technologies Inc , トレセンティテクノロジーズ株式会社
发明人： TSUCHIYAMA YOJI , NISHIHARA SHINJI , AOYANAGI MASAHIRO
IPC分类号： H01L21/304 , B24B49/02 , B24B51/00 , H01L21/02
CPC分类号： B24B37/345 , B24B49/02 , B24B51/00
摘要： PROBLEM TO BE SOLVED: To rationalize a semiconductor manufacturing process in which the ratio of manual operation, such as the CMP (Chemical Mechanical Polishing) step etc., is high by reducing the number of workers, to improve the throughput of the process, to compress the investment required for the process, and to improve the efficiency of the indirect business affairs performed in the process by promoting automation in the process.
SOLUTION: Unmanned operation is realized by treating a predetermined dummy wafer before treating a product wafer by only downloading the treatment recipe 24 of the product wafer from a host computer 19 to a CMP device 11 during the course of CMP operation. In addition, the measuring step performed in the next step is omitted by changing the condition of the recipe of the unmanned CMP device 11 based on the latest data by transmitting the measured data of a film thickness measuring instrument 17 mounted on the CMP device 11 from the CMP device 11 to the host computer 19 together with treatment data, such as the polishing time etc., and taking the advantage of the treating conditions of the next step in a feedforward-like state based on the measured data of the film thickness measuring instrument 17.
COPYRIGHT: (C)2005,JPO&NCIPI

4. 发明专利

JP2004356387A Process for fabricating semiconductor device 审中-公开
公开(公告)号：JP2004356387A
公开(公告)日：2004-12-16
申请号：JP2003152368
申请日：2003-05-29
申请人： Trecenti Technologies Inc , トレセンティテクノロジーズ株式会社
发明人： AOYANAGI MASAHIRO , TSUCHIYAMA YOJI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To enhance fabrication yield of semiconductor device by preventing adhesion of dust particles to a semiconductor wafer.
SOLUTION: A semiconductor wafer 10 loaded to a cassette case 11 located at a loader/unloader section 2 is carried through a carrying lane 12 to a wafer inverting chamber 3 and inverted. Ozone water or hydrogen peroxide water is then supplied to the rear surface of the semiconductor wafer 10 thus forming a silicon oxide film on the rear surface of the semiconductor wafer 10. Subsequently, the semiconductor wafer 10 is carried to a CMP processing unit 4 and the surface of the semiconductor wafer 10 is subjected to CMP processing. Since the rear surface of the semiconductor wafer 10 is rendered hydrophilic by forming a silicon oxide film, dust particles can be prevented from adhering to the rear surface of the semiconductor wafer 10 during CMP processing.
COPYRIGHT: (C)2005,JPO&NCIPI

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