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1. 发明专利

JP2014193152A Production method for ethanol using recombined yeast 有权
标题翻译：使用重组YEAST的乙醇生产方法
公开(公告)号：JP2014193152A
公开(公告)日：2014-10-09
申请号：JP2014036652
申请日：2014-02-27
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： ONISHI TORU , TADA NOBUKI , HOYA NORIKO , KATAHIRA SATOSHI , ISHIDA NOBUHIRO , NAGURA RISA
IPC分类号： C12P7/06 , C12N1/19 , C12N15/09
CPC分类号： C12P7/10 , C12N1/16 , C12N9/0008 , C12N9/90 , Y02E50/16 , Y02E50/17
摘要： PROBLEM TO BE SOLVED: To reduce the concentration of acetic acid by metabolizing acetic acid in the medium upon xylose assimilation in yeast having a xylose-metabolizing capacity and ethanol fermentation.SOLUTION: A production method for ethanol comprises a step for performing ethanol fermentation by culturing, in a medium containing xylose, recombined yeast into which a xylose isomerase gene and an acetaldehyde dehydrogenase gene have been introduced.
摘要翻译：要解决的问题：通过在具有木糖代谢能力和乙醇发酵的酵母中的木糖同化后，在介质中代谢乙酸来降低乙酸的浓度。解决方案：乙醇的生产方法包括通过培养进行乙醇发酵的步骤在含有木糖的培养基中，引入了木糖异构酶基因和乙醛脱氢酶基因的重组酵母。

2. 发明专利

JP2007089466A Method for producing lactic acid 审中-公开
标题翻译：生产乳酸的方法
公开(公告)号：JP2007089466A
公开(公告)日：2007-04-12
申请号：JP2005282603
申请日：2005-09-28
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： ONISHI TORU , SAITO SATOSHI , HOYA NORIKO , ISHIDA NOBUHIRO , TOKUHIRO TATEO , NAGAMORI EIJI , TAKAHASHI HARUO
IPC分类号： C12P7/56 , C12R1/865
摘要： PROBLEM TO BE SOLVED: To provide a method for producing lactic acid at low cost and in high yield, and to provide a method for using thiamine.
SOLUTION: The method for producing lactic acid comprises culturing variant yeast Saccharomyces cerevisiae in the presence of thiamine in a concentration of 0.05 mg/L or higher. In this method, the variant yeast Saccharomyces cerevisiae is such as to be introduced into yeast free of lactic acid-producing ability in such a way as to enable a lactic acid dehydrogenase to be functioned. Besides, a method for promoting lactic acid production while suppressing ethanol production is provided in the case of Saccharomyces cerevisiae where a pyruvic acid dehydrogenase 1 is disrupted.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：待解决的问题：提供低成本，高产率的乳酸的制造方法，提供使用硫胺素的方法。解决方案：生产乳酸的方法包括在硫胺素的存在下，以0.05mg / L或更高的浓度培养变种酵母酿酒酵母（Saccharomyces cerevisiae）。在该方法中，将变种酵母酿酒酵母以能够使乳酸脱氢酶发挥功能的方式引入到不含乳酸生成能力的酵母中。此外，在丙酮酸脱氢酶1被破坏的酿酒酵母的情况下，提供了抑制乙醇生成的方法。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2004187643A Method for producing lactic acid of high optical purity 有权
标题翻译：生产高光泽酸的方法
公开(公告)号：JP2004187643A
公开(公告)日：2004-07-08
申请号：JP2002362891
申请日：2002-12-13
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SAITO SATOSHI , SAOTOME OSAMU , ONISHI TORU , MATSUO YASUO , ISHIDA NOBUHIRO , TOKUHIRO TATEO , TAKAHASHI HARUO , HIRAI MASAKATA
IPC分类号： C12N15/09 , C12P7/56 , C12R1/865
摘要： PROBLEM TO BE SOLVED: To provide a method for producing lactic acid that is capable of giving a lactic acid of high optical purity. SOLUTION: The lactic acid is synthesized in a host with low lactic acid racemase activity. Since the racemization in the host can be inhibited, L-lactic acid or D-lactic acid of high optical purity can be synthesized. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：待解决的问题：提供能够产生高光学纯度的乳酸的乳酸的制造方法。解决方案：乳酸在具有低乳酸消旋酶活性的宿主中合成。由于可以抑制宿主中的外消旋化，所以可以合成高光学纯度的L-乳酸或D-乳酸。版权所有（C）2004，JPO＆NCIPI

4. 发明专利

JP2010068734A Method for producing lactic acid and additive for lactic acid fermentation 有权
标题翻译：用于生产酸乳的方法和用于酸乳发酵的添加剂
公开(公告)号：JP2010068734A
公开(公告)日：2010-04-02
申请号：JP2008238107
申请日：2008-09-17
申请人： Fuji Oil Co Ltd , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 不二製油株式会社 , 株式会社豊田中央研究所
发明人： ISHIDA NOBUHIRO , SHIMAMURA TAKASHI , ONISHI TORU , HOYA NORIKO , NAKAMORI TOSHIHIRO
IPC分类号： C12P7/56 , C12P21/06
摘要： PROBLEM TO BE SOLVED: To provide a lactic acid fermentation technology that avoids or suppresses use of waste molasses and has higher practicality as an industrial raw material. SOLUTION: A lactic acid producing microorganism is cultured and subjected to lactic acid fermentation by using a medium that includes a carbon source and a soybean peptide having a molecular weight distribution of a fraction having ≤1,000 Da of ≥98% and has an absorbance at 400 nm of ≤0.1. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供避免或抑制废糖蜜的使用的乳酸发酵技术，作为工业原料具有较高的实用性。解决方案：通过使用包含碳源的分子量分布为≥1000Da的分子量≥98％的大豆肽的培养基，培养产乳酸微生物并进行乳酸发酵，并具有 400nm处的吸光度≤0.1。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009261286A Yeast mutant and substance production method using the same 有权
标题翻译：使用它的YEAST突变体和物质生产方法
公开(公告)号：JP2009261286A
公开(公告)日：2009-11-12
申请号：JP2008113053
申请日：2008-04-23
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： ONISHI TORU , TADA NOBUKI , MATSUSHITA HIBIKI , HOYA NORIKO , ISHIDA NOBUHIRO , SHIMAMURA TAKASHI
IPC分类号： C12N1/19 , C12N15/09 , C12P1/02 , C12P7/56
CPC分类号： C07K14/395 , C12N9/0006 , C12N9/88 , C12P7/04 , C12P7/40 , C12P7/56
摘要： PROBLEM TO BE SOLVED: To largely improve the productivity of a desired product and maintain an excellent growth rate and an excellent fermentation rate in the production of the desired product by using yeast. SOLUTION: A foreign gene which encodes an enzyme involved in the production of the desired product and HAP4 gene which can be expressed constitutively or a homologous gene thereof are introduced into a yeast host. The yeast mutant is preferably a mutant strain having reduced alcohol productivity compared to its wild-type one. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：待解决的问题：通过使用酵母，大大提高所需产物的生产率并保持优异的生长速度和优异的发酵速度。解决方案：将参与产生所需产物的酶的外源基因和可以组成型表达的HAP4基因或其同源基因导入酵母宿主。酵母突变体优选是与其野生型酵母相比具有降低的醇生产力的突变菌株。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009000089A Microorganism having high lactic acid producing ability and its use 有权
标题翻译：具有高柠檬酸生产能力的微生物及其使用
公开(公告)号：JP2009000089A
公开(公告)日：2009-01-08
申请号：JP2007166874
申请日：2007-06-25
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： ISHIDA NOBUHIRO , SHIMAMURA TAKASHI , TAKAHASHI HARUO , ONISHI TORU , TADA NOBUKI
IPC分类号： C12N15/09 , C12N1/19 , C12N15/01 , C12P7/56 , C12Q1/02
摘要： PROBLEM TO BE SOLVED: To provide a target gene for improving lactic acid producing ability under an acidic condition.
SOLUTION: An endogenous gene which negatively acts on lactic acid production under an acidic condition is selected from endogenous gene candidates on the basis of selecting the endogenous gene candidates which negatively act on lactic acid production under the acidic condition and the lactic acid producing ability under the acidic condition of a transformant in which the expression of one or more than two endogenous genes selected from the endogenous gene candidates is suppressed. The lactic acid producing ability can be improved by suppressing the expression of the endogenous gene selected in this way.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供在酸性条件下提高乳酸生产能力的靶基因。解决方案：在酸性条件下对乳酸生成产生负面作用的内源基因是从内源基因候选中选出的，其基于选择在酸性条件下对乳酸产生负面作用的内源性基因候选物和产生乳酸的基因在其中抑制了选自内源基因候选物中的一种或多于两种内源基因的转化体的酸性条件下的能力。通过抑制以这种方式选择的内源基因的表达，可以提高乳酸的产生能力。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2006075133A Method for producing lactic acid 有权
标题翻译：生产乳酸的方法
公开(公告)号：JP2006075133A
公开(公告)日：2006-03-23
申请号：JP2004265655
申请日：2004-09-13
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： YAMAGUCHI IKUO , SAOTOME OSAMU , KUROMIYA SHIGERU , ONISHI TORU , HOYA NORIKO , SAITO SATOSHI , MORI MAKOTO , NAKANO MITSURU , USUKI ARIMITSU , ISHIDA NOBUHIRO , TOKUHIRO TATEO , NAGAMORI EIJI , TAKAHASHI HARUO
IPC分类号： C12P7/56 , C12N1/19 , C12N15/09
CPC分类号： C12P7/56 , C12N9/0006
摘要： PROBLEM TO BE SOLVED: To provide a method for producing lactic acid in high optical purity that is not conventionally attained. SOLUTION: Reduction in optical purity of lactic acid is found as a result of the progress of the racemization reaction of lactic acid in the case of using lactic acid and glycerol. The optical purity of lactic acid after heating and concentration is kept high by reducing the amount of glycerol before heating and concentrating lactic acid. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：待解决的问题：提供一种以往不能得到的高纯度的高纯度乳酸的制造方法。解决方案：使用乳酸和甘油的情况下，乳酸的外消旋化反应进行的结果，发现乳酸的光学纯度降低。加热浓缩后乳酸的光学纯度通过在加热和浓缩乳酸之前减少甘油的量而保持较高。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2014053552A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2014053552A
公开(公告)日：2014-03-20
申请号：JP2012198554
申请日：2012-09-10
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： HORIUCHI YUKI , KAMEYAMA SATORU , ONISHI TORU , EBINE JUMPEI
IPC分类号： H01L21/336 , H01L27/04 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can ensure a wider element operation region than in the past in a semiconductor device equipped with a dummy trench gate and a distribution wire for screening inspection of the dummy trench gate.SOLUTION: A semiconductor device comprises an element formation region which is arranged on a principal surface side of a semiconductor substrate and includes: a plurality of trench gates 12 which extend in an X direction and are arranged in parallel with each other in a Y direction orthogonal to the X direction; a plurality of dummy trench gates 13 which extend in the X direction and are arranged in parallel with each other in the Y direction, in such a manner as to sandwich each trench gate 12; gate distribution wires 15, 17, 17a formed on the principal surface of the semiconductor substrate, for electrically connecting the plurality of trench gates 12 with each other; and a dummy gate distribution wire 14 for electrically connecting the plurality of dummy trench gates 13 with each other. The dummy gate distribution wire 14 overlaps the gate distribution wires 15, 17, 17a so as to avoid the trench gate 12 in planar view from a thickness direction of the semiconductor substrate.
摘要翻译：要解决的问题：提供一种半导体器件，其能够确保与配备有虚设沟槽栅极的半导体器件和用于屏蔽虚拟沟槽栅极检查的配线的过去较宽的元件操作区域。解决方案：半导体器件包括设置在半导体衬底的主表面侧的元件形成区域，并且包括：在X方向上延伸并且在与X方向正交的Y方向上彼此平行地布置的多个沟槽栅12; 多个虚拟沟槽栅极13，其以X方向延伸并且在Y方向上彼此平行地布置，以夹住每个沟槽栅极12; 形成在半导体衬底的主表面上的用于将多个沟槽栅极12彼此电连接的栅极配线15,17,17,17a; 以及用于将多个虚拟沟槽栅极13彼此电连接的虚拟栅极配线14。虚拟栅极配线14与栅极配线15,17,17a重叠，以避免沟槽栅极12从半导体衬底的厚度方向看平面。

9. 发明专利

JP2012175003A Manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：JP2012175003A
公开(公告)日：2012-09-10
申请号：JP2011037614
申请日：2011-02-23
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： IWASAKI SHINYA , ONISHI TORU
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of easily manufacturing a semiconductor device having an electrode structure where multiple metal layers are laminated.SOLUTION: The method of manufacturing a semiconductor device by using a semiconductor substrate having a semiconductor layer, a first metal layer formed on te surface of the semiconductor layer, and an insulation layer formed at a position contiguous to the first metal layer so as to expose the first metal layer at least partially includes: a step for forming a second metal layer exhibiting higher adhesion to the first metal layer than to the insulation layer on the surface of the first metal layer at an exposed part and on the surface of the insulation layer; and a step for peeling off the second metal layer formed on the surface of the insulation layer from the insulation layer while leaving the second metal layer formed on the surface of the first metal layer.
摘要翻译：解决的问题：提供能够容易地制造具有多层金属层的电极结构的半导体装置的半导体装置的制造方法。解决方案：通过使用具有半导体层的半导体衬底，形成在半导体层的表面上的第一金属层和形成在与第一金属层相邻的位置处的绝缘层来制造半导体器件的方法，因此为了露出第一金属层至少部分地包括：用于形成对第一金属层具有更高粘附性的第二金属层的步骤，而不是在第一金属层的表面上的暴露部分和表面上的绝缘层绝缘层; 以及在离开形成在第一金属层的表面上的第二金属层的同时从绝缘层剥离形成在绝缘层的表面上的第二金属层的步骤。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2010129569A Semiconductor wafer 审中-公开
标题翻译： SEMICONDUCTOR WAFER
公开(公告)号：JP2010129569A
公开(公告)日：2010-06-10
申请号：JP2008299207
申请日：2008-11-25
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： ONISHI TORU
IPC分类号： H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor wafer which has sufficient wafer strength, and is easy to position on a stage and to remove from the stage.
SOLUTION: The semiconductor wafer 100 includes a thick layer part 2 and a thin layer part 4. The thick layer part 2 is formed along an outer circumference of the semiconductor wafer 100. The thin layer part 4 is formed in a range surrounded by the thick layer part 2, and is thinner than the thick layer part 2. Grooves 6a, 6b, 6c, 6d radially intersecting the thick layer part 2 from an outside to an inside of the wafer are formed on the thick layer part 2. In viewing the semiconductor wafer 100 planarly, both side walls of the grooves 6a, 6b, 6c, 6d intersect with straight lines parallel to a cleavage direction of the wafer.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有足够的晶片强度并且易于在载物台上定位并从载物台移除的半导体晶片。解决方案：半导体晶片100包括厚层部分2和薄层部分4.厚层部分2沿着半导体晶片100的外圆周形成。薄层部分4形成在包围的范围内通过厚层部分2，并且比厚层部分2薄。在厚层部分2上形成有从厚层部分2的从外部到内部径向相交的沟槽6a，6b，6c，6d。在平面地观察半导体晶片100时，槽6a，6b，6c，6d的两个侧壁与平行于晶片的解理方向的直线交叉。版权所有（C）2010，JPO＆INPIT

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