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    • 1. 发明专利
    • Method for reforming surface of silicon dioxide-based material, surface-reformed silicon dioxide-based material, and composite material of the surface-reformed silicon dioxide-based material
    • 二氧化硅基材料表面改性方法,表面改性二氧化硅基材料及表面改性二氧化硅基材料的复合材料
    • JP2007308321A
    • 2007-11-29
    • JP2006137647
    • 2006-05-17
    • Tosoh Quartz Corp東ソー・クォーツ株式会社
    • SAKKA TOSHIAKI
    • C01B33/12C03C17/22C04B41/80C04B41/87C04B41/89
    • PROBLEM TO BE SOLVED: To form a silicon nitride layer discontinuous in the depth direction on the surface of a silicon dioxide base material. SOLUTION: The inside of a reaction furnace 2 is made an atmosphere having an ultra-low oxygen partial pressure by filling the inside with nitrogen gas in which the oxygen partial pressure is made to be 1×10 -26 atm by a solid electrolyte-type oxygen pump. Thereafter, a high purity silicon dioxide-based material is placed in the reaction furnace 2, and a silicon nitride layer discontinuous in the depth direction is formed in the surface of the silicon dioxide-based material by heating the silicon dioxide-based material to 1,000°C in order to dissociate oxygen from the surface of the silicon dioxide-based material and at the same time, to bond nitrogen to the surface. The analysis of the surface and in the depth direction is carried out while focusing attention to Si-N bond by using an XPS (X-ray photoelectron spectrometer). Consequently, nitrogen detected in the surface disappears at the depth of 10 nm and is detected in a layer from a depth of 470 nm to a depth of 540 nm, having a thickness of 70 nm. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:在二氧化硅基材的表面上形成在深度方向上不连续的氮化硅层。 解决方案:通过将氧分压为1×10 -6 -6℃的氮气填充到内部,使反应炉2的内部成为具有超低氧分压的气氛, / SP> atm通过固体电解质型氧气泵。 然后,将高纯度二氧化硅系材料配置在反应炉2中,通过将二氧化硅系材料加热至1000℃,在二氧化硅系材料的表面形成深度方向不连续的氮化硅层 ℃,以便从二氧化硅基材料的表面离解氧,同时将氮键合到表面。 通过使用XPS(X射线光电子能谱仪)将注意力集中在Si-N键上,进行表面和深度方向的分析。 因此,在表面上检测到的氮在10nm的深度消失,并且在从470nm的深度到540nm的深度的层中被检测到,厚度为70nm。 版权所有(C)2008,JPO&INPIT
    • 2. 发明专利
    • Aperture and its manufacturing method
    • 孔及其制造方法
    • JP2007067005A
    • 2007-03-15
    • JP2005248228
    • 2005-08-29
    • Tosoh Quartz Corp東ソー・クォーツ株式会社
    • SAKKA TOSHIAKI
    • H01L21/3065
    • PROBLEM TO BE SOLVED: To uniformize the atmosphere in a reaction vessel by reducing an influence of a through hole provided in an aperture for introducing and discharging reaction gas into and from the reaction vessel to the outside of the reaction vessel. SOLUTION: The through-holes 21 of the aperture 2 provided at a port for reaction gas in the closed reaction vessel are arranged in a circle and are inclined with respect to a central axis, so that an influence of reaction produced in the reaction vessel is prevented from being transmitted to the outside through the aperture 2. Since the plurality of through-holes 21 are formed symmetrically on concentric circles and inclined with respect to a vertical axis, the gas passing through the aperture forms a spiral flow and uniformizes the atmosphere in the reaction vessel. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:通过减少设置在用于将反应气体引入反应容器和从反应容器排出到反应容器外部的孔中的通孔的影响,使反应容器中的气氛均匀化。 解决方案:设置在封闭反应容器中用于反应气体的孔口处的孔2的通孔21布置成圆形并相对于中心轴线倾斜,使得在 反应容器被防止通过孔2传递到外部。由于多个通孔21对称地形成在同心圆上并且相对于垂直轴线倾斜,所以通过孔的气体形成螺旋流并均匀化 反应容器中的气氛。 版权所有(C)2007,JPO&INPIT