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    • 5. 发明专利
    • Light emitting device module
    • 发光装置模块
    • JP2013157615A
    • 2013-08-15
    • JP2013045591
    • 2013-03-07
    • Toshiba Corp株式会社東芝
    • TAIRA HIROKI
    • H01L33/50C09K11/02C09K11/08C09K11/59C09K11/64C09K11/66C09K11/73C09K11/80
    • PROBLEM TO BE SOLVED: To provide a light emitting device module using a phosphor which can be used in high-temperature conditions.SOLUTION: A light emitting device module includes a light emitting element having a main emission peak above 420 nm and below or at 500 nm, and a phosphor layer formed on the light emitting element. A junction temperature of the light emitting element during continuous driving is from 100°C to 200°C inclusive. The phosphor layer contains a phosphor which absorbs light emitted from the light emitting element and emits light having a main emission peak from 650 nm to 665 nm inclusive, represented by the general formula (Mg,AE)(Ge,Sn)OHA:zMn, in which: AE represents one or more elements selected from the group consisting of Ca and Sr; HA represents one or more elements selected from the group consisting of F and Cl; and 2.54≤a≤4.40, 0.80≤b≤1.10, 3.85≤c≤7.00, 0≤d≤2.00, 0≤x≤0.05, 0≤y≤0.10, and 0
    • 要解决的问题:提供一种使用可在高温条件下使用的荧光体的发光器件模块。解决方案:发光器件模块包括发光元件,发光元件的主发射峰高于420nm以下或500 nm,以及形成在发光元件上的荧光体层。 连续驱动期间发光元件的结温为100℃〜200℃。 荧光体层包含吸收从发光元件发出的光的荧光体,发射由通式(Mg,AE)(Ge,Sn)OHA:zMn表示的具有650nm〜665nm的主发光峰的光, 其中:AE表示选自Ca和Sr中的一种或多种元素; HA表示选自F和Cl的一种或多种元素; 2.54≤a≤4.40,0.80≤b≤1.10,3.85≤c≤7.00,0≤d≤2.00,0≤x≤0.05,0≤y≤0.10,0≤z≤0.03。
    • 6. 发明专利
    • Light-emitting device
    • 发光装置
    • JP2012044053A
    • 2012-03-01
    • JP2010185242
    • 2010-08-20
    • Toshiba Corp株式会社東芝
    • TAIRA HIROKI
    • H01L33/50C09K11/66
    • H01L33/502H01L33/504H01L2224/32245H01L2224/32257H01L2224/48091H01L2224/48247H01L2224/48465H01L2224/73265H01L2924/00014H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a light-emitting device using phosphor usable under a high temperature conditions.SOLUTION: A light-emitting device comprises: a light-emitting element having a main light-emitting peak in a wavelength region of more than 420 nm and 500 nm or less; and a phosphor layer formed on the light-emitting element. The light-emitting element has a junction temperature of 100°C or more and 200°C or less. The phosphor layer includes a phosphor that is represented by general formula:(Mg,AE)(Ge,Sn)OHA:zMn (in the formula, AE represents at least one kind of element of Ca and Sr, HA represents at least one or more kinds of elements of F or Cl, 2.54≤a≤4.40, 0.80≤b≤1.10, 3.85≤c≤7.00, 0≤d≤2.00, 0≤x≤0.05, 0≤y≤0.10, and 0
    • 要解决的问题:提供使用在高温条件下可使用的荧光体的发光装置。 解决方案:发光器件包括:发光元件,其主波长区域在420nm以上且500nm以下的主发光峰; 以及形成在发光元件上的荧光体层。 发光元件的结温为100℃以上且200℃以下。 磷光体层包括由通式表示的荧光体:(SBB = POS =“POST”> (Ge 1-y ,Sn y b O O HA HA HA HA HA:::::::::::::::::::::::::::::::::::::Ca Ca Ca Ca Ca Ca Sr,HA表示F或Cl中的至少一种以上的元素,2.54≤a≤4.40,0.80≤b≤1.10,3.85≤c≤7.00,0≤d≤2.00,0≤x≤0.05,0≤ y≤0.10,0