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1. 发明专利

JP2012182558A Class ab amplifier 有权
标题翻译： AB类放大器
公开(公告)号：JP2012182558A
公开(公告)日：2012-09-20
申请号：JP2011042668
申请日：2011-02-28
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKAGI KAZUTAKA , TOMITA NAOTAKA
IPC分类号： H03F1/32 , H03F1/02 , H03F3/20
CPC分类号： H03F3/60 , H01L23/66 , H01L2223/6611 , H01L2223/6655 , H01L2224/48091 , H01L2224/49175 , H01L2924/1305 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H03F1/0261 , H03F1/565 , H03F2200/387 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a highly efficient class AB amplifier having high linearity over a wide band.SOLUTION: In the class AB amplifier where the power supply voltage is Vdc, and the angle of current flow θo of an amplifier element having a maximum current of Imax is between π (rad) and 2π (rad), the load impedance Z1 of basic wave when viewed from a slave current source in the equivalent circuit of the amplifier element is represented by Z1=R1+jX1, the load impedance Z2 of second harmonic is represented by Z2=R2+jX2, and the load impedance Z3 of third harmonic is represented by Z3=R3+jX3. The X1 and R1 satisfy a relation -0.5R1≤X1≤0.5R1, and the R1, X2/X1 and X3/X1 are set to satisfy the relations R1=Vdc/Imax{1-cos(θo/2)}π/{θo/2-sin(θo)/2}, X2/X1=-2{θo-sin(θo)}/{sin(θo/2)-sin(1.5θo)/3}, and X3/X1={θo-sin(θo)}/{sin(θo)/3-sin(2θo)/6}, respectively, or in the vicinity thereof.
摘要翻译：要解决的问题：提供在宽带上具有高线性度的高效率AB类放大器。解决方案：在电源电压为Vdc的AB类放大器中，具有最大电流Imax的放大器元件的电流流动角θo在π（rad）和2π（rad）之间，负载阻抗在放大器元件的等效电路中从从电流源观察时，基本波的Z1表示为Z1 = R1 + jX1，二次谐波的负载阻抗Z2由Z2 = R2 + jX2表示，负载阻抗Z3 三次谐波由Z3 = R3 + jX3表示。 X1和R1满足关系-0.5R1≤X1≤0.5R1，R1，X2 / X1和X3 / X1设定为满足R1 = Vdc / Imaxa1-cos（θo/ 2）}π/Θθo/ 2-sin（θo）/ 2}，X2 / X1 =-2.θo-sin（θo）} /äsin（θo/ 2）-sin（1.5θo）/ 3}，X3 / X1 =Θθ-sin（θo） } /äsin（θo）/ 3-sin（2θo）/ 6}或其附近。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011029966A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2011029966A
公开(公告)日：2011-02-10
申请号：JP2009174003
申请日：2009-07-27
申请人： Toshiba Corp , Toshiba Denpa Components Kk , 東芝電波コンポーネンツ株式会社 , 株式会社東芝
发明人： NG CHOON YONG , TAKAGI KAZUTAKA , TOMITA NAOTAKA
IPC分类号： H03F3/213 , H01L21/822 , H01L27/04
CPC分类号： H03F1/086 , H03F1/14 , H03F3/193 , H03F3/211
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a stabilization circuit for suppressing odd-mode oscillations, suppressing negative resistance with gun oscillation and obtaining stable and high-efficiency power amplification. SOLUTION: The semiconductor device includes a first active element FET1, a second active element FET2 connected in parallel with the first active element FET1, and a first stabilization circuit 120, which is connected between a gate G1 of the first active element FET1 and a gate G2 of the second active element FET2 and consists of a parallel circuit of a gate bypass resistor Rg 0 , a gate bypass capacitor Cg 0 and a gate bypass inductor Lg 0 , wherein the first stabilization circuit 120 has a resonant frequency equal to an odd-mode resonant frequency. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有用于抑制奇数振荡的稳定电路的半导体器件，用枪振荡抑制负电阻并获得稳定和高效的功率放大。解决方案：半导体器件包括与第一有源元件FET1并联连接的第一有源元件FET1，第二有源元件FET2和连接在第一有源元件FET1的栅极G1之间的第一稳定电路120 和第二有源元件FET2的栅极G2，由栅极旁路电阻器Rg 0 和栅极旁路电容器Cg 0 和栅极旁路电感器Lg 其中第一稳定电路120具有等于奇数共振频率的谐振频率。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2008205793A High frequency matching circuit 审中-公开
标题翻译：高频匹配电路
公开(公告)号：JP2008205793A
公开(公告)日：2008-09-04
申请号：JP2007039310
申请日：2007-02-20
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIDA TOMOHIRO , TOMITA NAOTAKA
IPC分类号： H03H7/38 , H03F3/193 , H03F3/21
摘要： PROBLEM TO BE SOLVED: To provide a high frequency matching circuit which has impedance matching about a high frequency signal of a desired frequency band and has a high Q value.
SOLUTION: The high frequency matching circuit is provided with an FET 12 for amplifying a high frequency signal, input side MEMS (Micro Electric Machine System) devices 15, 21 and 11 which respectively have a plurality of different capacity values in accordance with a plurality of different switching control voltages, and are connected to an input side of the FET 12 to have matching with input impedance of the FET 12, and output side MEMS devices 28 and 32 which respective have a plurality of different capacity values in accordance with a plurality of different switching control voltages, and are connected to an output side of the FET 12 to have matching with output impedance of the FET 12.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种高频匹配电路，其具有关于期望频带的高频信号的阻抗匹配并且具有高Q值。解决方案：高频匹配电路设置有用于放大高频信号的FET 12，输入侧MEMS（微电机系统）装置15,21和11，其分别具有多个不同容量值多个不同的开关控制电压，并且连接到FET 12的输入侧以与FET 12的输入阻抗匹配，并且输出侧的MEMS器件28和32分别具有多个不同的容量值多个不同的开关控制电压，并且连接到FET 12的输出侧以与FET 12的输出阻抗匹配。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008191088A Radar system 审中-公开
标题翻译：雷达系统
公开(公告)号：JP2008191088A
公开(公告)日：2008-08-21
申请号：JP2007028011
申请日：2007-02-07
申请人： Toshiba Corp , 株式会社東芝
发明人： IKUMA YOSHIYUKI , TOMITA NAOTAKA
IPC分类号： G01S13/34
摘要： PROBLEM TO BE SOLVED: To provide a radar system capable of reducing the size of a circuit chip while reducing costs.
SOLUTION: The radar system comprises: a first splitter for splitting the output of a VCO (Voltage Controlled Oscillator) 11 in two; a second splitter 13 for splitting one split output of the first splitter in two; a first switch SW1 for sending one split output of the second splitter to a transmitting antenna TxANT; a delay line 14 for delaying the other split output of the second splitter; a second switch SW2 for controlling whether the output of the delay line is passable or impassable; a synthesis unit 15 for synthesizing outputs of a receiving antenna RxANT and the delay line; a mixer 16 for performing frequency conversion of the output of the synthesis unit into a baseband (BB) by setting the other split output of the first splitter as a local one; a computing part 17 for supplying the VCO with the voltage in which the electric power spectrum of a reference signal of other received samples come within the range of a standard spectrum mask by making a frequency of the reference signal lower than the highest BB frequency and turning off the second switch for received samples in which a frequency of the reference signal is within the range of the BB frequency.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够在降低成本的同时减小电路芯片的尺寸的雷达系统。解决方案：雷达系统包括：用于将VCO（压控振荡器）11的输出分成两个的第一分路器; 第二分离器13，用于将第一分离器的一个分离输出分成两个; 用于将第二分离器的一个分离输出发送到发射天线TxANT的第一开关SW1; 用于延迟第二分离器的另一个分离输出的延迟线14; 用于控制延迟线的输出是否可通过或不可通过的第二开关SW2; 合成单元15，用于合成接收天线RxANT和延迟线的输出; 混频器16，用于通过将第一分路器的另一个分频输出设置为局部频率，将合成单元的输出频率转换为基带（BB）; 用于向VCO提供其他接收样本的参考信号的电功率谱通过使参考信号的频率低于最高BB频率并且转动的标准频谱掩模的范围内的电压的计算部分17 关闭其中参考信号的频率在BB频率的范围内的接收样本的第二开关。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2013070403A Semiconductor device having stabilization circuit 有权
标题翻译：具有稳定电路的半导体器件
公开(公告)号：JP2013070403A
公开(公告)日：2013-04-18
申请号：JP2012248201
申请日：2012-11-12
申请人： Toshiba Corp , 株式会社東芝
发明人： NG CHOON YONG , TAKAGI KAZUTAKA , TOMITA NAOTAKA
IPC分类号： H03F3/20 , H01L21/338 , H01L21/822 , H01L27/04 , H01L27/095 , H01L29/778 , H01L29/812 , H01L47/02 , H03B7/08 , H03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a stabilization circuit capable of obtaining stable and high-efficient power amplification by preventing negative resistance associated with a Gunn oscillation.SOLUTION: A semiconductor device includes: a substrate 10; an active element 140 that is disposed on the substrate and generates negative resistance at an oscillation frequency of a high-frequency negative resistance oscillation that is a Gunn oscillation; and a stabilization circuit 120 that is disposed on the substrate and is composed of a resistor R that is connected between a drain terminal electrode and an output terminal of the active element and has a resistance value equivalent to the absolute value of the negative resistance, and a tank circuit that is connected in parallel to the resistor R and is composed of an inductor L and a capacitor C that are tunable to the oscillation frequency of high-frequency negative resistance oscillation. The stabilization circuit 120 cancels the negative resistance by the resistor R at the oscillation frequency by tuning the oscillation frequency to the resonant frequency composed of the inductor L and the capacitor C.
摘要翻译：要解决的问题：提供一种具有稳定电路的半导体器件，该稳定电路能够通过防止与耿氏振荡相关的负电阻而获得稳定和高效的功率放大。解决方案：半导体器件包括：衬底10; 设置在基板上的有源元件140，以高频负电阻振荡的振荡频率产生作为耿氏振荡的负电阻; 以及稳定电路120，其设置在基板上，由连接在有源元件的漏极端子电极和输出端子之间的电阻器R构成，具有与负电阻的绝对值相当的电阻值，以及与电阻器R并联连接并由可调谐到高频负电阻振荡的振荡频率的电感器L和电容器C构成的振荡电路。稳定电路120通过将振荡频率调谐到由电感器L和电容器C组成的谐振频率，以振荡频率抵消电阻器R的负电阻。（C）2013，JPO＆INPIT

6. 发明专利

JP2012182557A Class c amplifier 有权
标题翻译：类C放大器
公开(公告)号：JP2012182557A
公开(公告)日：2012-09-20
申请号：JP2011042665
申请日：2011-02-28
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKAGI KAZUTAKA , TOMITA NAOTAKA
IPC分类号： H03F1/02 , H03F3/24
CPC分类号： H03F1/0261 , H01L23/66 , H01L2223/6611 , H01L2223/6655 , H01L2224/48091 , H01L2224/48227 , H01L2924/1305 , H03F1/565 , H03F3/60 , H03F2200/387 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a highly efficient broadband class C amplifier.SOLUTION: In the class C amplifier, the load impedance Z1 of a basic wave when viewed from a slave current source in the equivalent circuit of an amplifier element is represented by Z1=R1+jX1, and the load impedance Z2 of a second harmonic is represented by Z2=R2+jX2, when the power supply voltage is Vdc, and the angle of current flow θo of the amplifier element having a maximum current of Imax is less than π (rad). The X1 and R1 satisfy a relation -R1≤X1≤R1, the R1 is set to satisfy a relation R1=Vdc/Imax×π{1-cos(θo/2)}/{θo/2-sin(θo)/2}, and the X2/X1 is set to satisfy a relation X2/X1=-{θo/2-sin(θo)/2}/{sin(θo/2)-sin(1.5θo)/3}, or in the vicinity thereof.
摘要翻译：要解决的问题：提供高效宽带C类放大器。解决方案：在C类放大器中，从放大器元件的等效电路中的从电流源观察时的基波的负载阻抗Z1由Z1 = R1 + jX1表示，负载阻抗Z2 二次谐波由Z2 = R2 + jX2表示，当电源电压为Vdc时，具有最大电流为Imax的放大器元件的电流流动角θo小于π（rad）。 X1和R1满足关系-R1≤X1≤R1，将R1设定为满足关系R1 = Vdc / Imax×πa1-cos（θo/ 2）} /Θθo/ 2-sin（θo）/ 2} X2 / X1被设定为满足X2 / X1 =-aθo/ 2-sin（θo）/ 2} /äsin（θo/ 2）-sin（1.5θo）/ 3}的关系。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2008300284A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2008300284A
公开(公告)日：2008-12-11
申请号：JP2007147007
申请日：2007-06-01
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKAGI KAZUTAKA , TOMITA NAOTAKA
IPC分类号： H01H59/00 , B81B3/00 , H02N1/00
摘要： PROBLEM TO BE SOLVED: To provide an electrostatic MEMS which can be driven at a low voltage with a simple structure, easy to be manufactured, such as a metal movable electrode obtained by integrating a high frequency movable electrode and a movable electrode for electrostatic MEMS driving, and which is not self-actuated or self-held by a high frequency signal.
SOLUTION: A semiconductor device consists of an anchor 14 that fixes one end of the movable electrode and the surface of a dielectric substrate so that an air gap is formed between the surface of the dielectric substrate 24 and the movable electrode 10, a high frequency fixed electrode 18 that is arranged on the surface of the dielectric substrate so as to be opposite to the other end of the movable electrode, a via hole 20 in which the lower electrode 22 on the rear face of the dielectric substance and the lower electrode of the high frequency fixed electrode are connected to each other, a driving fixed electrode 16 that is arranged between the anchor on the surface of the dielectric substrate and the high frequency fixed electrode, and an insulating film 12 that covers the high frequency fixed electrode and the driving fixed electrode. In the semiconductor device, a driving voltage is applied between the driving fixed electrode and the movable electrode via a bias circuit with a high impedance at least against the high frequency.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供易于制造的可以以简单结构的低电压驱动的静电MEMS，例如通过集成高频可移动电极和可移动电极而获得的金属可动电极，用于静电MEMS驱动，并且其不是由自动致动或由高频信号自身保持。解决方案：半导体器件由固定器14构成，该固定器固定可动电极的一端和电介质衬底的表面，使得在电介质衬底24的表面与可动电极10之间形成气隙，布置在电介质基板的表面上以与可动电极的另一端相对的高频固定电极18;电介质物质背面的下电极22和下电极22的通孔20 高频固定电极的电极彼此连接，布置在电介质基板的表面上的锚固体和高频固定电极之间的驱动固定电极16和覆盖高频固定电极的绝缘膜12 和驱动固定电极。在半导体器件中，驱动电压通过至少抵抗高频的高阻抗的偏置电路施加在驱动固定电极和可动电极之间。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2009109417A Radar system and radar mounting mobile device 审中-公开
标题翻译：雷达系统和雷达安装移动设备
公开(公告)号：JP2009109417A
公开(公告)日：2009-05-21
申请号：JP2007283843
申请日：2007-10-31
申请人： Toshiba Corp , 株式会社東芝
发明人： TOMITA NAOTAKA , SUGAFUJI KAZUHIRO
IPC分类号： G01S13/34
摘要： PROBLEM TO BE SOLVED: To maintain the number of detections of a target distance and a relative velocity per unit time of each antenna even when a radar signal processing section is shared by a plurality of radars.
SOLUTION: For example, three radars share a transmission/reception selector switch 122 and a radar signal processing section 13, and they are switched and connected to antennas AT1-AT3 of each radar via an antenna selector switch 121, thereby allowing time sharing processing of the three radars. The radar signal processing section 13 performs processing while the optimal center frequencies, the minimum sweep band widths, minimum sweep times, the minimum FFT (Fast Fourier Transform) sample numbers of at least respective radars are set the same. The switches 121 and 122 are switched and controlled by time division so that the requested detection distance ranges of respective antennas AT1-AT3, a transmitted pulse establishing the requested clutter-proof characteristic, and a receiving sample string, are arranged separately by a required time interval or longer in the unit time obtained by dividing the sweep time by the FFT sample number.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：即使当雷达信号处理部分被多个雷达共享时，也可以保持目标距离的检测次数和每个天线的每单位时间的相对速度。解决方案：例如，三个雷达共享发射/接收选择器开关122和雷达信号处理部分13，并且它们经由天线选择器开关121切换并连接到每个雷达的天线AT1-AT3，由此允许时间共享处理三个雷达。雷达信号处理部分13执行处理，同时设置至少相应雷达的最佳中心频率，最小扫频带宽，最小扫描次数，最小FFT（快速傅立叶变换）采样号。开关121和122通过时分切换和控制，使得各个天线AT1-AT3的请求检测距离范围，建立所请求的防杂波特性的发送脉冲和接收样本串被分开排列所需时间通过将扫描时间除以FFT样本数获得的单位时间间隔或更长。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008191090A Radar system 审中-公开
标题翻译：雷达系统
公开(公告)号：JP2008191090A
公开(公告)日：2008-08-21
申请号：JP2007028018
申请日：2007-02-07
申请人： Toshiba Corp , 株式会社東芝
发明人： IKUMA YOSHIYUKI , TOMITA NAOTAKA
IPC分类号： G01S13/34 , G01S7/282 , G01S7/288
摘要： PROBLEM TO BE SOLVED: To provide a radar system capable of reducing the size of a circuit chip while reducing costs. SOLUTION: The radar system comprises: a first splitter 12 for splitting the output of a VCO (Voltage Controlled Oscillator) at the frequency f/N in three; a first switch SW1 for sending to a transmitting antenna TxANT one split part that is produced by multiplying a first one of the above split outputs at an N multiplier and then splitting it in two at a second splitter; a first mixer 15 for mixing the other split part with an output of an receiving antenna RxANT; a second switch SW2 for controlling whether the signal is passable or impassable that is produced by mixing at a second mixer 17 a second split output of the first splitter which has been delayed at a delay line 16 with a third split output of the first splitter; a synthesis unit 18 for synthesizing the output of the first mixer and the signal from the second switch; a computing part 19 for supplying the VCO with the voltage in which the electric power spectrum of a reference signal of other received samples come within the range of a standard spectrum mask by making a frequency of a reference signal lower than the highest baseband frequency turning off the second switch for received samples in which a frequency of a reference signal is within the range of the baseband frequency. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够在降低成本的同时减小电路芯片的尺寸的雷达系统。解决方案：雷达系统包括：第一分离器12，用于以频率f / N三分频VCO（压控振荡器）的输出; 第一开关SW1，用于向发送天线TxANT发送一个分割部分，其通过以N个乘法器乘以上述分离输出中的第一个，然后在第二分离器处将其分成两部分而产生; 用于将另一分割部分与接收天线RxANT的输出混合的第一混频器15; 第二开关SW2，用于通过在第二混频器17处混合产生的信号是可通过的或不可通过的，第一分离器的第二分离输出在延迟线16处被延迟到第一分离器的第三分离输出; 合成单元18，用于合成第一混频器的输出和来自第二开关的信号; 计算部件19，用于向VCO提供其他接收样本的参考信号的电功率谱在标准频谱掩模的范围内的电压，使得参考信号的频率低于最高基带频率的频率关闭用于参考信号的频率在基带频率范围内的接收样本的第二开关。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2010081249A Stabilization circuit and semiconductor device having stabilization circuit 有权
标题翻译：具有稳定电路的稳定电路和半导体器件
公开(公告)号：JP2010081249A
公开(公告)日：2010-04-08
申请号：JP2008246652
申请日：2008-09-25
申请人： Toshiba Corp , 株式会社東芝
发明人： NG CHOON YONG , TAKAGI KAZUTAKA , TOMITA NAOTAKA
IPC分类号： H03F3/20 , H01L21/822 , H01L27/04 , H03B9/12 , H03F1/08
CPC分类号： H03F3/245 , H03F1/086 , H03F3/195 , H03F2200/391 , H03F2200/451
摘要： PROBLEM TO BE SOLVED: To provide a stabilization circuit for obtaining stable and highly efficient power amplification by suppressing negative resistance due to gun oscillation, and to provide a semiconductor device equipped with the stabilization circuit. SOLUTION: The stabilization circuit is provided with a resistor R which is connected to a main electrode of an active element 140, having the negative resistance in accordance with high-frequency negative resistance oscillation; and a tank circuit which is connected, in parallel with the resistor R and consists of inductance L and capacitance C to be tuned with the oscillation frequency of the high-frequency negative resistance oscillation, thereby the negative resistance of the active element is canceled. The semiconductor device is provided with the stabilization circuit. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种稳定电路，通过抑制由于枪振荡引起的负电阻而获得稳定高效的功率放大，并提供配备有稳定电路的半导体器件。解决方案：稳压电路设有电阻R，电阻R连接到有源元件140的主电极，具有根据高频负电阻振荡的负电阻; 以及与电阻器R并联并且由电感L和电容C与高频负电阻振荡的振荡频率进行调谐的振荡电路，消除了有源元件的负电阻。半导体器件设置有稳定电路。版权所有（C）2010，JPO＆INPIT

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