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1. 发明专利

JP2011010487A Power conversion device 有权
标题翻译：电源转换器件
公开(公告)号：JP2011010487A
公开(公告)日：2011-01-13
申请号：JP2009152504
申请日：2009-06-26
申请人： Central Res Inst Of Electric Power Ind , Toshiba Corp , 株式会社東芝 , 財団法人電力中央研究所
发明人： KUZUMAKI ATSUHIKO , MOCHIKAWA HIROSHI , MURAO TAKESHI , TAKASAKI MASAHIRO , ISHIKAWA TADAO , KIKUMA TOSHIAKI
IPC分类号： H02M1/08 , H02M7/5387
CPC分类号： H02M7/5387 , H02M7/5388
摘要： PROBLEM TO BE SOLVED: To provide a power conversion device that reduces a switching loss caused by a reverse recovery current and a heat-generation loss.SOLUTION: The power conversion device includes a cascode element 21, in which a normally-on switching element 4 and a normally-off switching element 5 are electrically connected in series and a gate terminal of the normally-on switching element 4; a source terminal of the normally-off switching element 5 are connected via a cascode connection diode 7; and a high-speed diode 6 that is connected electrically, in parallel with the cascode element 21 and has a cathode region connected to a positive-electrode terminal and an anode region connected to a negative-electrode terminal.
摘要翻译：要解决的问题：提供一种降低由反向恢复电流和发热损失引起的开关损耗的电力转换装置。解决方案：电力转换装置包括共源共栅组件21，其中常开开关元件4 并且常闭开关元件5与常开开关元件4串联电连接和栅极端子; 常闭开关元件5的源极端子通过共源共栅连接二极管7连接; 以及与共源共栅元件21并联电连接并具有连接到正极端子的阴极区域和与负极端子连接的阳极区域的高速二极管6。

2. 发明专利

JP2013099133A Gate drive circuit 有权
标题翻译：门控驱动电路
公开(公告)号：JP2013099133A
公开(公告)日：2013-05-20
申请号：JP2011240371
申请日：2011-11-01
申请人： Toshiba Corp , 株式会社東芝 , Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所
发明人： KUZUMAKI ATSUHIKO , MOCHIKAWA HIROSHI , MURAO TAKESHI , TAKASAKI MASAHIRO , OKADA YUKO
IPC分类号： H02M1/08
CPC分类号： Y02E10/56
摘要： PROBLEM TO BE SOLVED: To provide a gate drive circuit capable of satisfying low loss characteristics by fast switching while satisfying constraint conditions of an applicable gate voltage and inhibiting an unauthorized operation as an inverter, such as an erroneous on-operation.SOLUTION: A gate resistance (Rg1) 3 is provided on the gate side of a junction field effect transistor (JFET) 1 formed from SiC and is connected with a gate power supply (Vsg) 7 through a switch 5. In addition, between the gate and source of the JFET 1, there is provided a capacitor (Cg) 11 with a capacitance larger than a floating capacitance (Cf1) 9 generated between the drain and gate of the JFET 1.
摘要翻译：要解决的问题：提供一种能够通过快速切换来满足低损耗特性的栅极驱动电路，同时满足适用的栅极电压的约束条件并且抑制诸如错误的操作之类的逆变器的未经授权的操作。解决方案：栅极电阻（Rg1）3设置在由SiC形成的结型场效应晶体管（JFET）1的栅极侧，并通过开关5与栅极电源（Vsg）7连接。另外在JFET 1的栅极和源极之间，提供了一个电容（Cg）11，其电容大于在JFET 1的漏极和栅极之间产生的浮动电容（Cf1）9。）2013，JPO＆INPIT

3. 发明专利

JP2013045747A Electrode for ion source, and method of manufacturing the same 有权
标题翻译：用于离子源的电极及其制造方法
公开(公告)号：JP2013045747A
公开(公告)日：2013-03-04
申请号：JP2011185097
申请日：2011-08-26
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIBUYA SUMIICHI , TAKASAKI MASAHIRO , ICHIHASHI KOJI , ASANO SHIRO , OKUYAMA TOSHIHISA
IPC分类号： H01J27/02 , H01J9/02 , H01J37/08
摘要： PROBLEM TO BE SOLVED: To provide an electrode for an ion source, having good bondability between an electrode plate and a cooling pipe, high cooling efficiency, excellent corrosion resistance and a long life.SOLUTION: This electrode for the ion source has an electrode body part 4 in which a plurality of thin plates 1, 2 having a plurality of beam extracting holes formed for extracting ion beams are bonded so as to be superimposed, a plurality of cooling pipes 3a, 3b, 3c made of a metal material different from that for the thin plates, while penetrating the electrode body part from one end part to the other end part and having extensions each extending from both ends of the electrode body part, and a pair of end plates 7 made of a material different from that for the thin plates and each mounted on both sides of the electrode body part so that the extensions of the cooling pipes penetrate the inside thereof, with the spaces between the end plates and the cooling pipes each seal-welded and with the thin plates joined to the cooling pipes by a hot hydrostatic pressure process to integrate them.
摘要翻译：要解决的问题：提供一种用于离子源的电极，在电极板和冷却管之间具有良好的粘合性，高冷却效率，优异的耐腐蚀性和长寿命。解决方案：用于离子源的电极具有电极体部分4，其中多个具有用于提取离子束的多个光束提取孔的薄板1,2被结合以重叠，多个冷却管3a，3b，3c，由不同于薄板的金属材料制成，同时从一个端部穿过电极主体部分到另一个端部，并且具有从电极主体部分的两端延伸的延伸部分，以及一对端板7，其由与薄板不同的材料制成，并且每个端板安装在电极主体部分的两侧，使得冷却管的延伸部穿透其内部，并且端板和每个密封焊接的冷却管和通过热静水压力过程将薄板连接到冷却管，以将它们整合。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012175848A Invalid power compensation device 有权
标题翻译：无效功率补偿装置
公开(公告)号：JP2012175848A
公开(公告)日：2012-09-10
申请号：JP2011036829
申请日：2011-02-23
申请人： Central Research Institute Of Electric Power Industry , Toshiba Corp , 一般財団法人電力中央研究所 , 株式会社東芝
发明人： SANO KENICHIRO , TAKASAKI MASAHIRO , KIKUMA TOSHIAKI , MURAO TAKESHI , MOCHIKAWA HIROSHI , KUZUMAKI ATSUHIKO
IPC分类号： H02J3/18 , G05F1/70
CPC分类号： Y02E40/30
摘要： PROBLEM TO BE SOLVED: To enable a self-excited invalid power compensation device using a hybrid-type cascade converter to operate without requiring a DC power supply as an additional auxiliary power supply.SOLUTION: A self-excited invalid power compensation device interconnected to a three-phase AC power system has a hybrid-type cascade converter having clusters 1u, 1v and 1w corresponding to the respective three-phase AC, each of which is configured so that a high-voltage cell 1, a medium voltage cell 1, and a low voltage cell 1are connected in series to perform control of a waveform of an output voltage. By adding voltage deviations ΔV' and ΔV' to switching boundary values for an output voltage mode of the high-voltage cell 1, the medium voltage cell 1, and the low voltage cell 1for controlling waveforms of the output voltages from the clusters 1u, 1v and 1w, power communication is performed among the high-voltage cell 1, the medium voltage cell 1, and the low voltage cell 1to control voltages V, Vand Vof DC capacitors of the respective cells.
摘要翻译：要解决的问题：使得能够使用混合型级联转换器的自激无效功率补偿装置在不需要DC电源作为附加辅助电源的情况下工作。解决方案：与三相交流电力系统互连的自激无功功率补偿装置具有混合型级联转换器，其具有对应于相应的三相AC的簇1u，1v和1w，其中每一个被配置使得高电压单元1 Hy ，中压单元1 My 和低电压单元1 Ly 串联连接以执行输出电压波形的控制。通过将高压电池的输出电压模式的电压偏差ΔV HL 和ΔV ML 1 Hy ，中压单元1 我的，低电压单元1 Ly < / SB>，用于控制来自簇1u，1v和1w的输出电压的波形，在高电压单元1 Hy 之间进行电力通信，中压单元1 < SB POS =“POST”>我的，低电压单元1 Ly 控制电压V CHy 各个单元的直流电容器的V CMy 和V CLy 。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2011076937A Electrode for ion source 审中-公开
标题翻译：电离电极
公开(公告)号：JP2011076937A
公开(公告)日：2011-04-14
申请号：JP2009228700
申请日：2009-09-30
申请人： Toshiba Aitekku Kk , Toshiba Corp , 東芝アイテック株式会社 , 株式会社東芝
发明人： TAKASAKI MASAHIRO , SHIBUYA SUMIICHI , ICHIHASHI KOJI , ASANO SHIRO , OKUYAMA TOSHIHISA
IPC分类号： H01J27/08 , C23C14/48 , G21B1/11 , G21K5/04 , H01J37/08
摘要： PROBLEM TO BE SOLVED: To provide an electrode for an ion source of long lifetime, having high cooling efficiency and superior corrosion resistance.
SOLUTION: The electrode for an ion source includes a pair of heat-resistant electrode plates 1, 1A, 1B, 3, 3A, and 3B of heat-resistant metal material in which a plurality of beam holes 23 for extracting ion beam are formed, with at least one of them containing continuous grooves 2, 2A, and 2B; as well as, includes barrier materials 4, 4A, 4B, 5, 5A, and 5B of corrosion-resistant metal material which are sandwiched between the pair of heat-resistant electrode plates, being tightly bonded to each of the heat-resistant electrode plates so as to cover the peripheral wall of the groove; and further includes coolant flow paths 22, 22A, and 22B which are arranged near the beam holes, with their periphery being defined by the barrier material covering the peripheral wall of the groove, for the coolant for cooling the heat-resistant electrode plate to be flown, and with at least a part of them infiltrating the grooves 2, 2A, and 2B.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供长寿命的离子源用电极，具有高的冷却效率和优异的耐腐蚀性。解决方案：用于离子源的电极包括耐热金属材料的一对耐热电极板1,1A，1B,3,3A和3B，其中多个用于提取离子束的光束孔23 形成，其中至少一个包含连续的凹槽2,2A和2B; 并且包括夹在一对耐热电极板之间的耐腐蚀金属材料的阻挡材料4,4A，4B，5A，5B和5B紧密地结合到每个耐热电极板以覆盖槽的周壁; 并且还包括布置在梁孔附近的冷却剂流动通道22,22A和22B，其周边由覆盖槽的周壁的阻挡材料限定，用于将耐热电极板冷却的冷却剂为并且其中至少一部分浸入槽2,2A和2B中。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2013017032A Method of manufacturing vacuum container 有权
标题翻译：制造真空容器的方法
公开(公告)号：JP2013017032A
公开(公告)日：2013-01-24
申请号：JP2011148333
申请日：2011-07-04
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKASAKI MASAHIRO , KIMURA SATOSHI , KOBAYASHI TAKAYUKI , SHIBUYA SUMIICHI
IPC分类号： H01P11/00 , B23K9/00 , B23K9/167 , B23K9/173 , B23K15/00
摘要： PROBLEM TO BE SOLVED: To manufacture a vacuum container, such as a wave guide, which has low distortion and high form accuracy, merely by fused joining from outside.SOLUTION: There is provided a method of manufacturing a vacuum container comprising: a pair of side plates 2 in which step portions are formed at upper and lower ends; and upper and lower plates 1 which fit in the step portions. In this method, a vertical groove surface a, which is formed on a joint surface of the side plates and the upper and lower plates, is joined by welding.
摘要翻译：要解决的问题：仅通过从外部的熔接而制造具有低变形和高成形精度的诸如波导的真空容器。解决方案：提供一种制造真空容器的方法，包括：一对侧板2，其中在上端和下端形成台阶部分; 以及适合于台阶部的上下板1。在这种方法中，通过焊接将形成在侧板和上下板的接合表面上的垂直槽表面a接合。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2011071066A Method for manufacturing high-frequency acceleration cavity 审中-公开
标题翻译：制造高频加速孔的方法
公开(公告)号：JP2011071066A
公开(公告)日：2011-04-07
申请号：JP2009223345
申请日：2009-09-28
申请人： Toshiba Aitekku Kk , Toshiba Corp , 東芝アイテック株式会社 , 株式会社東芝
发明人： SHIBUYA SUMIICHI , TAKASAKI MASAHIRO , OTA TOMOKO , TAJIMA YUJIRO , YOSHIYUKI KEN , NOBUSADA YUUJI , NAKAYAMA KOICHI
IPC分类号： H05H7/20 , B23K15/00 , B23K26/00 , B23K31/00 , H05H7/18
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-frequency acceleration cavity, which can repair or retouch an inner periphery surface of the cavity. SOLUTION: The method for manufacturing the superconductive high-frequency acceleration cavity 1 manufactures a plurality of half cells 20 which are provided with equatorial parts 28 and iris parts 27, carries out electron beam welding to assemble a cavity body for the superconductive high-frequency acceleration cavity 1 from the plurality of the half cells 20 and then shapes a penetration bead by the electron beam welding by laser welding a welded part W2 on an inner side of the superconductive high-frequency acceleration cavity 1. COPYRIGHT: (C)2011,JPO&INPIT

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