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1. 发明专利

JP2006114936A Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：JP2006114936A
公开(公告)日：2006-04-27
申请号：JP2006014452
申请日：2006-01-23
申请人： Toshiba Corp , 株式会社東芝
发明人： KURONAGA KOICHI , SHIOZAWA HIDEO , TANAKA AKIRA
IPC分类号： H01S5/22
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device for decreasing the band gap discontinuity occurs at the interface between a cladding layer and an active layer, and improving the operation voltage and the operation current.
SOLUTION: The semiconductor laser device includes: a crystalline substrate; a first laser element section for emitting laser light with a first wavelength, provided on the crystalline substrate; and a second laser element section for emitting laser light with a second wavelength different from the first wave length, provided on the crystalline substrate. The first laser element section includes a bulk structured active layer having a film thickness from 0.01 μm to 0.1 μm; and the second laser element section includes an active layer composed of a lamination layer of a quantum well layer and a barrier layer.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种用于减小带隙不均的半导体激光器件，在包覆层和有源层之间的界面处发生，并且改善操作电压和操作电流。解决方案：半导体激光器件包括：晶体衬底; 用于发射具有第一波长的激光的第一激光元件部分，设置在所述晶体衬底上; 以及第二激光元件部，用于发射设置在所述结晶基板上的具有与所述第一波长不同的第二波长的激光。第一激光元件部分包括具有0.01μm至0.1μm的膜厚度的体结构的有源层; 并且第二激光元件部包括由量子阱层和阻挡层的层叠层构成的有源层。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2013211399A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2013211399A
公开(公告)日：2013-10-10
申请号：JP2012080257
申请日：2012-03-30
申请人： Toshiba Corp , 株式会社東芝
发明人： HIGUCHI KAZUTO , SHIOZAWA HIDEO , FUJII TAKAYOSHI , KOJIMA AKIHIRO , OBATA SUSUMU , TERADA TOSHIYUKI
IPC分类号： H01L33/50 , H01L33/38
CPC分类号： H01L33/44 , H01L33/46 , H01L33/50
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with suppressed chromaticity deviation.SOLUTION: There is provided a semiconductor light-emitting element including a first semiconductor layer of a first conductivity type, a light-emitting layer, a second semiconductor layer of a second conductivity type, first and second conductive pillars, a translucent layer, and a wavelength conversion layer. The first semiconductor layer has a first primary surface having a first portion and a second portion, and a second primary surface located on the opposite side of the first primary surface and having a third portion and a fourth portion around the third portion. The light-emitting layer is located on the first portion. The second semiconductor layer is located on the light-emitting layer. The first conductive pillar is connected to the first semiconductor layer. The second conductive pillar is connected to the second semiconductor layer. A sealing portion covers side surfaces of the first and second conductive pillars. The translucent layer is located on the fourth portion and has translucency. The wavelength conversion layer is located on the third portion and the translucent layer and emits light having a different peak wavelength from light emitted from the light-emitting layer.
摘要翻译：要解决的问题：提供具有抑制的色度偏差的半导体发光元件。解决方案：提供一种半导体发光元件，包括第一导电类型的第一半导体层，发光层，第二半导体层第二导电类型，第一和第二导电柱，半透明层和波长转换层。第一半导体层具有第一主表面和第二主表面，第一主表面具有第一部分和第二部分，第二主表面位于第一主表面的相对侧上，并且具有围绕第三部分的第三部分和第四部分。发光层位于第一部分上。第二半导体层位于发光层上。第一导电柱连接到第一半导体层。第二导电柱连接到第二半导体层。密封部分覆盖第一和第二导电柱的侧表面。半透明层位于第四部分并具有半透明度。波长转换层位于第三部分和半透明层上，并且从发光层发射的光发射具有不同峰值波长的光。

3. 发明专利

JP2004186259A Semiconductor laser device, its manufacturing method, and multiwavelength integrated semiconductor laser apparatus 审中-公开
标题翻译：半导体激光器件及其制造方法和多波长集成半导体激光器装置
公开(公告)号：JP2004186259A
公开(公告)日：2004-07-02
申请号：JP2002349033
申请日：2002-11-29
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA , SHIOZAWA HIDEO , WATANABE MINORU , GENEI KOUICHI , TANAKA HIROKAZU
IPC分类号： H01S5/22 , H01S5/00 , H01S5/065 , H01S5/223 , H01S5/323 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/2206 , H01S5/2231 , H01S5/34326 , H01S5/3436 , H01S5/4031 , H01S5/4087
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of self-lasing over a wide output region and up to a high output, and to provide its manufacturing method and a multiwavelength integrated semiconductor laser apparatus.
SOLUTION: The semiconductor laser device comprises a substrate, a first conductivity type cladding layer formed on the substrate, an active layer formed on the first conductivity type cladding layer for emitting light by current injection, a first second conductivity type cladding layer formed on the active layer, and a band shaped conductivity type cladding layer formed on the first second conductivity type cladding layer in a first direction, where the cut surface thereof perpendicular to the first direction has mutually opposing upper and lower sides and two sides connecting the upper and lower sides, and the minimum width thereof is ≥70 % of the maximum width and ≤100 % of the same. The semiconductor laser device performs self-lasing in the predetermined output region.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在宽输出区域和高输出端上自激光的半导体激光器件，并提供其制造方法和多波长集成半导体激光装置。解决方案：半导体激光装置包括基板，形成在基板上的第一导电型包覆层，形成在第一导电型包层上的用于通过电流注入发光的有源层，形成第一导电类型包层在第一方向上形成在第一第二导电型包覆层上的带状导电型包覆层，其中垂直于第一方向的切割面具有相互相对的上下侧，两侧连接上部下侧，最小宽度为最大宽度的70％以上且≤100％。半导体激光器件在预定输出区域中执行自激光。版权所有（C）2004，JPO＆NCIPI

4. 发明专利

JP2011049295A Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：JP2011049295A
公开(公告)日：2011-03-10
申请号：JP2009195517
申请日：2009-08-26
申请人： Toshiba Corp , 株式会社東芝
发明人： KURONAGA KOICHI , TANAKA HIROKAZU , YUGE SHOZO , KAWAMOTO SATOSHI , SHIOZAWA HIDEO
IPC分类号： H01S5/22 , H01S5/022 , H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device which can reduce the angle deviation of a polarization direction.
SOLUTION: The semiconductor laser device includes a laser array having a first laminated body which emits the light of a first wavelength having a ridge-type wave guide, a second laminated body which emits the light of second wavelength which is longer than the first wave length while being provided apart across a groove, and first and second electrodes containing gold films while being provided on the first and the second laminated body, a sub-mount having an insulation body and first and second conductive layers each having a foundation metal film and a gold layer of a thickness range of 0.05-0.3 μm provided thereon, a first alloy solder layer which adheres the first electrode and the first conductive layer and has a larger thickness than that of the gold layer of the first conductive layer, and a second alloy solder layer which adheres the second electrode and the second conductive layer and has a larger thickness than that of the gold layer of the second conductive layer where, in the ridge-type waveguide, the slant of the side face near the groove is more gradual than that of the side face far from the groove.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种能够减小偏振方向的角度偏差的半导体激光装置。解决方案：半导体激光器件包括具有发射具有脊型波导的第一波长的光的第一层叠体的激光器阵列，发射比第二波长长的第二波长的光的第二层叠体第一波长同时被设置在一个沟槽之间，第一和第二电极在设置在第一和第二层叠体上的同时包含金膜，具有绝缘体的子座和第一和第二导电层各自具有基础金属膜和设置在其上的厚度范围为0.05-0.3μm的金层，第一合金焊料层，其粘附第一电极和第一导电层，并且具有比第一导电层的金层厚的厚度;以及第二合金焊料层，其粘合所述第二电极和所述第二导电层，并且具有比所述第二导电层的所述金层厚的厚度，在脊状波导中，靠近凹槽的侧面的倾斜比远离凹槽的侧面的倾斜更平缓。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2008300714A Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：JP2008300714A
公开(公告)日：2008-12-11
申请号：JP2007146580
申请日：2007-06-01
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIOZAWA HIDEO
IPC分类号： H01S5/022 , H01L23/50
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device for which the rigidity of a lead frame is improved, the deformation of a mount part is substantially reduced even when force is applied from the outside to the lead frame, stress on a photodiode chip and a sub mount mount-connected to the lead frame is reduced, and peeling and chipping are reduced. SOLUTION: For the mount part of the lead frame 101, projection work 111 is executed to the connection part of a laser chip 103 and the mount part or the connection part of the photodiode chip 104 and the mount part or the connection part of the laser chip 103 and the mount part and the connection part of the photodiode chip 104 and the mount part. The work of surrounding the connection part of the laser chip 103 and the mount part or the connection part of the photodiode chip and the mount part or the connection part of the laser chip 103 and the mount part and the connection part of the photodiode chip 104 and the mount part by a projection part (called ridge work) is executed. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种提高引线框架的刚性的半导体激光器件，即使从外部施加到引线框架时，安装部件的变形也显着降低，光电二极管芯片和安装在引线框架上的副安装件减少，剥离和切屑减少。
解决方案：对于引线框架101的安装部分，对激光芯片103的连接部分和光电二极管芯片104的安装部分或连接部分以及安装部分或连接部分执行投影工作111 激光芯片103和安装部分以及光电二极管芯片104的连接部分和安装部分。围绕激光芯片103的连接部分和光电二极管芯片的安装部分或连接部分以及激光芯片103的安装部分或连接部分以及光电二极管芯片104的安装部分和连接部分的工作并且通过突出部（称为隆起工件）执行安装部。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008160005A Semiconductor laser device and manufacturing method therefor 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：JP2008160005A
公开(公告)日：2008-07-10
申请号：JP2006349539
申请日：2006-12-26
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIOZAWA HIDEO
IPC分类号： H01S5/22
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device which restrains short-circuit failures at fusion, and also to provide its manufacturing method.
SOLUTION: A DVD laser light-emitting part 101 and a CD laser light-emitting part 111 are provided on a surface of an n-type GaAs substrate 11. A vallum part 103 is disposed on both sides of the DVD laser light-emitting part 101 via a current blocking layer 18, and a vallum part 113 is disposed on both sides of the CD laser light-emitting part 111 via the current blocking layer 18. A contact layer 19 and p-side electrodes 20, 30 are formed on cap layers 17a, 27a and the current blocking layer 18, and an n-side electrode 31 is formed in a rear of the n-type GaAs substrate 11. A dielectric film 32 is formed in a surface side of the n-type GaAs substrate 11, in contact with the n-type GaAs substrate 11, exposing the contact layer 19 and the p-side electrodes 20, 30.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种抑制融合时的短路故障的半导体激光装置，还提供其制造方法。解决方案：在n型GaAs衬底11的表面上设置DVD激光发光部101和CD激光发光部111.在DVD激光的两侧配置有阴极部103 通过电流阻挡层18将发光部101设置在CD激光发光部111的两侧，通过电流阻挡层18设置阴极部113.接触层19和p侧电极20,30 形成在盖层17a，27a和电流阻挡层18上，并且n型电极31形成在n型GaAs衬底11的后部。电介质膜32形成在n型GaAs衬底11的表面侧 GaAs衬底11，与n型GaAs衬底11接触，暴露接触层19和p侧电极20,30。（C）2008，JPO＆INPIT

7. 发明专利

JP2004342719A Semiconductor laser apparatus and its manufacturing method 审中-公开
公开(公告)号：JP2004342719A
公开(公告)日：2004-12-02
申请号：JP2003135408
申请日：2003-05-14
申请人： Toshiba Corp , Toshiba Electronic Engineering Corp , 東芝電子エンジニアリング株式会社 , 株式会社東芝
发明人： TANAKA AKIRA , ITO YOSHIYUKI , HORIUCHI OSAMU , MAKUTA AKIO , KURONAGA KOICHI , SHIOZAWA HIDEO
IPC分类号： G11B7/125 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/06 , H01S5/065 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/0601 , H01S5/0654 , H01S5/0658 , H01S5/2022 , H01S5/2081 , H01S5/209 , H01S5/2206 , H01S5/2231 , H01S5/3202 , H01S5/34326 , H01S5/3436 , H01S5/4031 , H01S5/4087
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser apparatus that is improved further in luminous characteristics by solving the problem caused by a vertical ridge stripe, and to provide a method of manufacturing the laser apparatus. SOLUTION: The semiconductor laser apparatus is provided with a first-conductivity clad layer (2), an active layer (4) provided on the clad layer (2), and second-conductivity clad layers (6 and 8) provided on the active layer (4). At least parts of the second-conductivity clad layers (6 and 8) are formed in the state of a ridge stripe (10). The semiconductor laser apparatus is characterised in that the ridge stripe (10) has a vertical section (10b) which is provided on its upper side and has nearly vertical side faces and an inclined section (10a) which is provided on the underside of the vertical section (10b), and the side faces of which are inclined so that the width of the stripe (10) may be expanded toward the active layer (4). COPYRIGHT: (C)2005,JPO&NCIPI

8. 发明专利

JP2001057462A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JP2001057462A
公开(公告)日：2001-02-27
申请号：JP23104299
申请日：1999-08-18
申请人： TOSHIBA CORP
发明人： KURONAGA KOICHI , SHIOZAWA HIDEO , TANAKA AKIRA
IPC分类号： H01S5/323 , H01S5/20 , H01S5/40
摘要： PROBLEM TO BE SOLVED: To reduce the height of band gap discontinuity, and to improve an operating voltage and an operating current by forming an active layer with bulk structure with a specific film thickness at a first laser element, and by forming the active layer with the lamination structure of quantum well and barrier layers in a second laser element. SOLUTION: Laser elements 40 and 41 that have wavelength 780 and 650 nm, respectively, are formed on the same n-type GaAs crystal substrate. In both the laser elements 40 and 41, second p-type cladding layers 18 and 28 are machined to projecting strip called a ridge, and both the sides are buried by a GaAs current element layer 31, thus constricting current flowing into an active layer, and generating strip-shaped gain distribution in the active layer. In this case, an active layer 14 has an undoped layer of AlGaAs with a layer thickness of 0.01 μm or more and 0.1 nm or less, namely, bulk structure, and an active layer 24 is a multi quantum well active layer being composed of the undoped well layer and a barrier layer.

9. 发明专利

JPH01184974A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH01184974A
公开(公告)日：1989-07-24
申请号：JP826688
申请日：1988-01-20
申请人： TOSHIBA CORP
发明人： OKUDA HAJIME , ISHIKAWA MASAYUKI , SHIOZAWA HIDEO
IPC分类号： H01S5/00
摘要： PURPOSE:Not only to obtain a laser excellent in current constriction, low in threshold value, and high in reliability but also enable the mass production of the laser at a low cost by a method wherein ion implantation is performed into the part of an intermediate band gap layer other than a current injection region. CONSTITUTION:An n-GaAs buffer layer 102, an n-(Al0.5Ga0.5)0.5In0.5P clad layer 103, an undoped Ga0.5In0.5P active layer 104, a p-(Al0.5Ga0.5)0.5In0.5P clad layer 105, a p-Ga0.5In0.5P intermediate layer band gap layer 106, and a p-GaAs contact layer 107 are formed on an n-GaAs substrate 101. And, protons are injected into both the sides of a stripe through an ion-implantation so as to penetrate the intermediate band gap layer 106 (as shown by region 108), a p-type electrode 109 is formed on the RGaAs contact layer 107, and an n-type electrode 110 is formed on the substrate 101 side. When a current is made to flow through this laser, the oscillation occurs at the active layer 104 in width nearly equal to that of the stripe. Therefore, the current is completely prevented from spreading in the RGa0.5In0.5P intermediate band gap layer 106, so that the oscillating threshold is low.

10. 发明专利

JP2000011417A SEMICONDUCTOR LASER ARRAY AND ITS PRODUCTION, OPTICAL INTEGRATED UNIT, OPTICAL PICKUP AS WELL AS OPTICAL DISK DRIVE ASSEMBLY 失效
公开(公告)号：JP2000011417A
公开(公告)日：2000-01-14
申请号：JP18106898
申请日：1998-06-26
申请人： TOSHIBA CORP
发明人： UCHISAKI ICHIRO , MORI KAZUNARI , SHIOZAWA HIDEO
IPC分类号： G11B7/125 , G11B7/00 , G11B7/12 , G11B7/123 , G11B7/1275 , G11B7/13 , G11B7/131 , G11B7/135 , G11B7/1353 , H01S5/00 , H01S5/22 , H01S5/223 , H01S5/343 , H01S5/40
摘要： PROBLEM TO BE SOLVED: To integrate refractive index guide type semiconductor lasers varying in oscillation wavelengths and to form a semiconductor laser array by disposing a first laser element part which exists on a substrate and releases a laser beam of a first wavelength and a second laser element part which exists in parallel therewith and releases a different wavelength. SOLUTION: The active layer 214 of the laser element part 240 of a wavelength 780 nm is formed of a MQW structure consisting of Ga0.9Al0.1As well layers and Ga0.65Al0.35As barrier layers and the active layer 224 of the laser element part 241 of a wavelength 650 nm is formed of an MQW structure consisting of In0.5Ga0.5P well layers and In0.5(Ga0.5Al0.5)0.5P barrier layers. Refractive index steps are formed in a transverse direction by the combination of third clad layers 218, 228 processed to a projecting stripe shape and a GaAs current blocking layer 231, by which the laser element parts 240, 241 are formed as a refractive index guide laser. The laser element parts 240, 241 are respectively applied to CD disks and DVD disks and are used as LDs of optically integrated units.

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