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1. 发明专利

JP2015056646A 半導体装置及び半導体モジュール审中-公开
标题翻译：半导体器件和半导体器件
公开(公告)号：JP2015056646A
公开(公告)日：2015-03-23
申请号：JP2013191176
申请日：2013-09-13
申请人：株式会社東芝 , Toshiba Corp
发明人： KURI YUUJI , SEKIYA HIRONORI , SASAKI HARUKA , KOTANI KAZUYA , TADA NOBUMITSU , MATSUMURA HITOTSUGU , IGUCHI TOMOHIRO
IPC分类号： H01L21/52 , H01L23/48 , H01L25/07 , H01L25/18
CPC分类号： H01L24/83 , H01L23/24 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/072 , H01L2224/0345 , H01L2224/03462 , H01L2224/04026 , H01L2224/05582 , H01L2224/05583 , H01L2224/05584 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/29111 , H01L2224/29139 , H01L2224/2929 , H01L2224/29294 , H01L2224/29339 , H01L2224/32013 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2224/83447 , H01L2224/8346 , H01L2224/8384 , H01L2924/00014 , H01L2924/10272 , H01L2924/1033 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/3512 , H01L2924/35121 , H01L2924/01029 , H01L2924/0105 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要：【課題】半導体素子と基板との接合部の信頼性を向上させることができる半導体装置及び半導体モジュールを提供すること。【解決手段】実施形態に係る半導体装置は、半導体素子と、金属膜と、を含む。前記半導体素子は、第1面及び第1面とは反対側の第2面を有する。前記金属膜は、前記半導体素子の前記第2面に設けられる。前記金属膜は、Crを含む。前記半導体素子は、Siの動作保証温度よりも高い動作保証温度の材料を含んでいても良い。【選択図】図1
摘要翻译：要解决的问题：提供一种能够提高半导体元件和基板之间的接合部的可靠性的半导体器件，并提供半导体模块。解决方案：半导体器件包括半导体元件和金属膜。半导体元件具有在第一表面的相对侧上的第一表面和第二表面。金属膜设置在半导体元件的第二表面上。金属膜含有Cr。半导体元件可以包含具有比Si的操作保证温度更高的操作保证温度的材料。

2. 发明专利

JP2012064416A Vacuum valve 有权
标题翻译：真空阀
公开(公告)号：JP2012064416A
公开(公告)日：2012-03-29
申请号：JP2010207206
申请日：2010-09-15
申请人： Toshiba Corp , 株式会社東芝
发明人： ASARI NAOKI , SASAKI HARUKA , SASAGE KOSUKE , OTAKE SHIRO
IPC分类号： H01H33/662
摘要： PROBLEM TO BE SOLVED: To improve withstanding voltage characteristic of a shield member that corresponds to an arc shield capturing metal vapor.SOLUTION: A vacuum valve includes: a vacuum insulation container 1; a pair of removable contact points 5 and 6 stored in the vacuum insulation container 1; and a shield member that is provided so as to surround the contact points 5 and 6 and captures metal vapor generated between the contact points 5 and 6. The shield member is composed of a cylindrical insulation tube 9 having a specific dielectric constant and an electrode film 10 formed by a high melting point material and provided on an inner surface of the insulation tube 9.
摘要翻译：要解决的问题：提高对应于电弧屏蔽捕获金属蒸汽的屏蔽构件的耐受电压特性。解决方案：真空阀包括：真空绝热容器1; 存储在真空绝热容器1中的一对可移除接点5和6; 以及屏蔽部件，其被设置成围绕接触点5和6并且捕获在接触点5和6之间产生的金属蒸气。屏蔽部件由具有特定介电常数的圆柱形绝缘管9和电极膜 10由高熔点材料形成并设置在绝缘管9的内表面上。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2014187088A Method for manufacturing power semiconductor device and power semiconductor device 审中-公开
标题翻译：用于制造功率半导体器件和功率半导体器件的方法
公开(公告)号：JP2014187088A
公开(公告)日：2014-10-02
申请号：JP2013059349
申请日：2013-03-22
申请人： Toshiba Corp , 株式会社東芝
发明人： KURI YUUJI , SEKIYA HIRONORI , SASAKI HARUKA , KOTANI KAZUYA , TADA NOBUMITSU , MATSUMURA HITOTSUGU , IGUCHI TOMOHIRO
IPC分类号： H01L21/304 , B24C1/10 , H01L25/07 , H01L25/18
CPC分类号： H01L23/49866 , H01L23/3735 , H01L23/49844 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/29111 , H01L2224/29311 , H01L2224/29339 , H01L2224/29347 , H01L2224/29355 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2224/83101 , H01L2224/83205 , H01L2224/83455 , H01L2224/83825 , H01L2224/8384 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00014 , H01L2924/014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a power semiconductor device capable of improving product reliability by suppressing thermal expansion and thermal contraction by a cold heat cycle, and a power semiconductor device manufactured by the method.SOLUTION: A method for manufacturing a power semiconductor device comprising a base substrate having a conductor layer on a surface thereof and a semiconductor element mounted on the base substrate according to an embodiment includes a step of forming a curing layer on a surface of the conductor layer.
摘要翻译：要解决的问题：提供一种能够通过抑制热循环的热膨胀和热收缩来提高产品可靠性的方法以及通过该方法制造的功率半导体器件。功率半导体器件包括在其表面上具有导体层的基底基板和安装在基底基板上的半导体元件，包括在导体层的表面上形成固化层的步骤。

4. 发明专利

JP2013171027A Metal deterioration detection device, program and metal deterioration detection method 审中-公开
标题翻译：金属检测装置，程序和金属检测方法
公开(公告)号：JP2013171027A
公开(公告)日：2013-09-02
申请号：JP2012037275
申请日：2012-02-23
申请人： Toshiba Corp , 株式会社東芝
发明人： TODO YOKO , MATSUDA HISASHI , YAMAMOTO ATSUSHI , WAKAMATSU KENGO , SASAKI HARUKA
IPC分类号： G01N33/20 , G01N21/27
摘要： PROBLEM TO BE SOLVED: To provide a metal deterioration detection device, a program and a metal deterioration detection method capable of preventing a contact failure due to corrosion of a contact component including a metal portion.SOLUTION: A metal deterioration detection device includes: color image acquisition means; color stimulus value calculation means; arithmetic means; a data base; and notification means. The color image acquisition means acquires a color image of a second metal or a second metal thin film which is exposed in substantially the same environment as an environment of a first metal to be a deterioration detection object. The color stimulus value calculation means calculates a color stimulus value of the color image. The arithmetic means plots the color stimulus value on a three-dimensional color space to determine a moving distance of a plotted locus. The data base stores a deterioration threshold of the moving distance corresponding to a contact resistance value of the second metal correlating to a contact resistance value of the first metal changing with the lapse of time due to exposure. The notification means performs notification when the moving distance of the locus reaches the deterioration threshold.
摘要翻译：要解决的问题：提供一种金属劣化检测装置，程序和金属劣化检测方法，其能够防止由包括金属部分的接触部件的腐蚀引起的接触故障。解决方案：金属劣化检测装置包括：彩色图像收购手段; 颜色刺激值计算方法; 算术手段数据库和通知装置。彩色图像获取装置获取在与作为劣化检测对象的第一金属的环境基本相同的环境中暴露的第二金属或第二金属薄膜的彩色图像。颜色刺激值计算装置计算彩色图像的颜色刺激值。算术装置绘制三维颜色空间上的颜色刺激值，以确定绘制轨迹的移动距离。数据库存储与第二金属的接触电阻值相对应的移动距离的劣化阈值与第一金属的接触电阻值随着曝光时间的流逝而变化。通知装置在轨迹的移动距离达到劣化阈值时进行通知。

5. 发明专利

JP2012028268A Vacuum valve 有权
标题翻译：真空阀
公开(公告)号：JP2012028268A
公开(公告)日：2012-02-09
申请号：JP2010168551
申请日：2010-07-27
申请人： Toshiba Corp , 株式会社東芝
发明人： ASARI NAOKI , SASAKI HARUKA , SASAGE KOSUKE
IPC分类号： H01H33/662
摘要： PROBLEM TO BE SOLVED: To improve withstand voltage characteristics of a current-carrying shaft facing an arc shield in a vacuum.SOLUTION: A vacuum valve includes: a pair of contacts 6 and 7 which are housed in a vacuum insulation vessel 1 and are freely brought into contact with and separated from each other; fixed-side and movable-side current-carrying shafts 4 and 8 fixed to the pair of contacts 6 and 7 respectively; and an arc shield 11 provided so as to surround the pair of contacts 6 and 7. The fixed-side and movable-side current-carrying shafts 4 and 8, which have large areas facing the arc shield 11 to reduce a breakdown field, are covered with fixed-side and movable-side inorganic insulators 5 and 9, whereby electron emission due to field radiation is suppressed.
摘要翻译：要解决的问题：提高在真空中面对电弧屏蔽的载流轴的耐压特性。解决方案：真空阀包括：一对接头6和7，它们容纳在真空绝热容器1中并且彼此自由地接触并分离; 固定侧和可动侧载流轴4和8分别固定在一对触点6和7上; 以及设置成围绕一对触点6和7的电弧屏蔽11.具有面对电弧屏蔽11的大面积以减少击穿场的固定侧和可动侧载流轴4和8是被固定侧和可动侧无机绝缘体5和9覆盖，从而抑制由于场辐射引起的电子发射。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2012009402A Contact for vacuum valve, and manufacturing method of the same 有权
标题翻译：真空阀的接触及其制造方法
公开(公告)号：JP2012009402A
公开(公告)日：2012-01-12
申请号：JP2010146949
申请日：2010-06-28
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAMOTO ATSUSHI , KUSANO TAKASHI , SASAKI HARUKA , SASAGE KOSUKE , OKUTOMI ISAO
IPC分类号： H01H33/664 , B23K35/30 , B23K35/40 , C22C9/00 , H01H1/025 , H01H1/04 , H01H11/04 , H01H33/662
摘要： PROBLEM TO BE SOLVED: To obtain a contact having an alloy layer containing a large amount of Cr having a prescribed thickness provided on a base place having excellent conductivity.SOLUTION: In a contact for a vacuum valve used for a vacuum valve having a pair of attachable/detachable contacts 5, the contact 5 is, for example, fixed to an electrode 2 for generating a vertical magnetic-field and constituted of a conductive layer 3 made of a base plate having excellent conductivity, and an alloy layer 4 formed on the surface of this conductive layer 3, and the alloy layer 4 is formed with a prescribed thickness by thickened wall by welding using a welding wire made of Cu-Cr alloy.
摘要翻译：待解决的问题：为了获得具有设置在具有优异导电性的基底上的具有规定厚度的大量Cr的合金层的接触。解决方案：在用于具有一对可连接/可拆卸触点5的真空阀的真空阀的触点中，触点5例如固定到用于产生垂直磁场的电极2，并由由导电性优异的基板制成的导电层3和形成在该导电层3的表面上的合金层4和合金层4通过使用由 Cu-Cr合金。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2010198734A Contact material for vacuum valve, and method of manufacturing the same 审中-公开
标题翻译：真空阀的接触材料及其制造方法
公开(公告)号：JP2010198734A
公开(公告)日：2010-09-09
申请号：JP2009038640
申请日：2009-02-20
申请人： Shibafu Engineering Corp , Toshiba Corp , 株式会社東芝 , 芝府エンジニアリング株式会社
发明人： OKUTOMI ISAO , KUSANO TAKASHI , YAMAMOTO ATSUSHI , SASAGE KOSUKE , HONMA MITSUTAKA , SOMEI HIROMICHI , OSABE KIYOSHI , SASAKI HARUKA
IPC分类号： H01H33/66 , B22F3/26 , C22C38/00 , C22C38/18 , H01H1/025 , H01H11/04
摘要： PROBLEM TO BE SOLVED: To provide a contact material for a vacuum valve for improving restrike characteristics in addition to maintaining cut-off characteristics at a prescribed level.
SOLUTION: The contact material used for the vacuum valve having a pair of contacts 5, 6 which can be brought into contact with and separated from each other includes an arc resistant component comprising reformed Cr particles coated with at least one of a FeCCr layer (A) having a Fe component, a C component and a Cr component, a FeCCr layer (B), and a FeCCrCu layer (C) having the Fe component, the C component, the Cu component, and a Cu component, and a conductive component comprising Cu particles.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：除了将切断特性保持在规定水平之外，还提供用于提高再起弧特性的真空阀的接触材料。解决方案：用于真空阀的接触材料具有可与之接触并分离的一对接点5,6，其包括抗电弧成分，其包含涂覆有FeCCr中的至少一种的重整的Cr颗粒具有Fe成分，C成分和Cr成分的层（A），FeCCr层（B）和具有Fe成分，C成分，Cu成分和Cu成分的FeCCrCu层（C），以及包含Cu颗粒的导电组分。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2013229474A Electronic apparatus and method of manufacturing the same 有权
标题翻译：电子装置及其制造方法
公开(公告)号：JP2013229474A
公开(公告)日：2013-11-07
申请号：JP2012101045
申请日：2012-04-26
申请人： Toshiba Corp , 株式会社東芝
发明人： SASAKI HARUKA , TAKAGI KAZUTAKA
IPC分类号： H01L21/52 , B23K1/00 , B23K101/42 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To provide an electronic apparatus whose thermal resistance can be reduced, and a method of manufacturing the same.SOLUTION: The electronic apparatus according to an embodiment includes: a first conductive member; a first junction layer which contains an intermetallic compound of at least one metal selected from the group consisting of copper (Cu), silver (Ag), palladium (Pd), and platinum (Pt) and at least one metal selected from the group consisting of tin (Sn), zinc (Zn), and indium (In) and is provided on the first conductive member; a first junction support layer which is provided on the first junction layer and contains at least one metal selected from the group consisting of copper (Cu), silver (Ag), palladium (Pd), and platinum (Pt); a second conductive member provided on the first junction support layer; and an electronic component provided on the second conductive member.
摘要翻译：要解决的问题：提供一种能够降低热阻的电子设备及其制造方法。解决方案：根据实施例的电子设备包括：第一导电构件; 第一接合层，其含有选自铜（Cu），银（Ag），钯（Pd）和铂（Pt）中的至少一种金属的金属间化合物和选自以下的至少一种金属：的锡（Sn），锌（Zn）和铟（In），并且设置在第一导电构件上; 第一接合支撑层，其设置在第一接合层上并且包含选自由铜（Cu），银（Ag），钯（Pd）和铂（Pt）组成的组中的至少一种金属; 设置在所述第一接合支撑层上的第二导电构件; 以及设置在第二导电构件上的电子部件。

9. 发明专利

JP2013025870A Joining material for vacuum valve 有权
标题翻译：真空阀门接合材料
公开(公告)号：JP2013025870A
公开(公告)日：2013-02-04
申请号：JP2011156155
申请日：2011-07-14
申请人： Toshiba Corp , 株式会社東芝
发明人： KUSANO TAKASHI , YAMAMOTO ATSUSHI , SASAGE KOSUKE , KATO KENJI , SASAKI HARUKA
IPC分类号： H01H33/664 , B23K35/30 , C22C5/06 , C22C29/06 , C22C29/08 , C22C29/10 , H01H33/662
摘要： PROBLEM TO BE SOLVED: To provide a joining material for a vacuum valve, firmly joining a contact and an electrode and suitable for increased capacity and frequent opening/closing.SOLUTION: Contacts 6, 8 made of an Ag-carbide system alloy and electrodes 5, 9 made of Cu are joined with a joining material for a vacuum valve, respectively. In the joining material, Ag similar to the contact system and Cu similar to the electrodes are used as a base material, a metal same as a metal constituting the carbide of the contact system is added, and the carbide is formed at junctions 7, 10 where the contacts 6, 8 and the electrodes 5, 9 are joined, respectively.
摘要翻译：要解决的问题：提供一种用于真空阀的接合材料，牢固地接合接触和电极，并且适合于增加容量和频繁的打开/关闭。解决方案：由Ag碳化物系合金制成的接头6,8和由Cu制成的电极5,9分别与用于真空阀的接合材料接合。在接合材料中，使用类似于接触系统的Ag和类似于电极的Cu作为基材，添加与构成接触体系的碳化物的金属相同的金属，并且在接合部7,10处形成碳化物其中触点6,8和电极5,9分别连接。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2013008579A Vacuum valve and manufacturing method thereof 有权
标题翻译：真空阀及其制造方法
公开(公告)号：JP2013008579A
公开(公告)日：2013-01-10
申请号：JP2011140867
申请日：2011-06-24
申请人： Toshiba Corp , 株式会社東芝
发明人： ASARI NAOKI , SASAKI HARUKA , SHIOIRI SATORU , SOMEI HIROMICHI , TAKEI YOSHIHIRO , OTAKE SHIRO
IPC分类号： H01H33/664 , H01H33/662
摘要： PROBLEM TO BE SOLVED: To preserve micronization of arc-proof components, starting from manufacturing of a contact, until completion of assembly of a vacuum valve and to achieve enhancement of voltage resistance characteristics.SOLUTION: A vacuum valve has a pair of contacts 5 and 6 that is freely brought into contact with each other and separated from each other. The pair of contacts 5 and 6 is constituted of: base material layers 5a and 6a formed by mixing predetermined quantities of conductive components and arc-proof components; first fine layers 5b and 6b that have first micronized arc-proof components micronized by energy irradiating the arc-proof components while being formed on surfaces of the base material layers 5a and 6a; and second fine layers 5c and 6c that have second micronized arc-proof components micronized by executing current conditioning treatment of the first micronized arc-proof components while being formed at random on surfaces of the first fine layers 5b and 6b.
摘要翻译：要解决的问题：为了保持防弧部件的微粉化，从接触制造开始直到完成真空阀的组装并且实现耐电压特性的提高。解决方案：真空阀具有一对可自由地彼此接触并彼此分离的触点5和6。一对触点5和6由以下部分组成：通过混合预定量的导电部件和防弧部件而形成的基材层5a和6a; 第一微细薄层5b和6b，其具有通过在基材层5a和6a的表面上形成的能量照射电弧组件而微粉化的第一微粉化防弧元件; 以及通过在第一微细化层5b和6b的表面上随机形成第一微粉化电弧组件的电流调节处理，使具有第二微粉化防弧组件微粉化的第二微细层5c和6c。版权所有（C）2013，JPO＆INPIT

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