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1. 发明专利

JP2015035636A 窒化物半導体素子有权
标题翻译：氮化物半导体器件
公开(公告)号：JP2015035636A
公开(公告)日：2015-02-19
申请号：JP2014235399
申请日：2014-11-20
申请人：株式会社東芝 , Toshiba Corp
发明人： TACHIBANA KOICHI , YOSHIDA GAKUSHI , ONO HIROSHI , NAGO HAJIME , HARADA YOSHIYUKI , HIKOSAKA TOSHIKI , SUGAI MAKI , OKA TOSHIYUKI , NUNOUE SHINYA
IPC分类号： H01L33/16 , H01L33/22 , H01L33/32
摘要：【課題】効率が高い窒化物半導体素子を提供する。【解決手段】実施形態によれば、半導体層を備えた窒化物半導体素子が提供される。前記半導体層は、主面を有し、窒化物半導体を含む。前記半導体層は、前記主面内に配置された複数の構造体を有する。前記複数の構造体のそれぞれは、前記主面上に設けられた凸部、または、前記主面上に設けられた凹部である。前記複数の構造体の配列の最近接の方向と、前記半導体層の結晶格子の前記主面に対して平行な平面内における最近接の方向と、の間の角度の絶対値は、1度以上10度以下である。【選択図】図1
摘要翻译：要解决的问题：提供高效率的氮化物半导体器件。解决方案：提供包括半导体层的氮化物半导体器件。半导体层包括主表面和氮化物半导体。半导体层包括设置在主表面上的多个结构。多个结构中的每一个是设置在主表面上的突出部分或设置在主表面中的凹部。多个结构的阵列的最近方向与半导体层的平行于主表面的平面中的晶格的最接近的方向之间的角度的绝对值不小于1度且不大于10度。

2. 发明专利

JP2015029042A 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の形成方法有权
标题翻译：氮化物半导体元件，氮化物半导体器件和形成氮化物半导体层的方法
公开(公告)号：JP2015029042A
公开(公告)日：2015-02-12
申请号：JP2014035256
申请日：2014-02-26
申请人：株式会社東芝 , Toshiba Corp
发明人： HIKOSAKA TOSHIKI , YOSHIDA GAKUSHI , NAGO HAJIME , SUGIYAMA NAOJI , NUNOUE SHINYA
IPC分类号： H01L33/12 , C23C16/30 , C23C16/34 , C23C16/42 , H01L21/205 , H01L21/338 , H01L29/778 , H01L29/812 , H01L33/32
CPC分类号： H01L29/2003 , H01L21/02458 , H01L21/02488 , H01L21/02494 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L29/1075 , H01L29/7786
摘要：【課題】転位が少ない窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の形成方法を提供する。【解決手段】実施形態によれば、積層体と、機能層と、を備えた窒化物半導体素子が提供される。積層体は、第1GaN層と、第1層と、第2GaN層と、を含む。第1GaN層は、第1凸部を含む。第1層は、第1GaN層に設けられSiおよびMgの少なくともいずれかを含有する。第2GaN層は、第2凸部を含む。第2凸部の底部の長さは、第1凸部の底部の長さよりも短い。【選択図】図1
摘要翻译：要解决的问题：提供具有较少位错的氮化物半导体元件，氮化物半导体晶片和形成氮化物半导体层的方法。解决方案：提供一种包括堆叠体和功能层的氮化物半导体元件。层叠体包括第一GaN层，第一层和第二GaN层。第一GaN层包括第一突起部分。第一层设置在第一GaN层上，并且含有Si和Mg中的至少一种。第二GaN层包括第二凸极。第二突出部的底部的长度比第一突出部的底部的长度短。

3. 发明专利

JP2013084978A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2013084978A
公开(公告)日：2013-05-09
申请号：JP2012277463
申请日：2012-12-19
申请人： Toshiba Corp , 株式会社東芝
发明人： KIMURA SHIGEYA , HARADA YOSHIYUKI , NAGO HAJIME , TACHIBANA KOICHI , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01L33/06
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high luminous efficiency.SOLUTION: A semiconductor light-emitting element according to an embodiment comprises an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including the nitride semiconductor, and a light-emitting layer. The light-emitting layer comprises a barrier layer including a group III element and a well layer laminated with the barrier layer in a direction from the n-type semiconductor layer to the p-type semiconductor layer and including the group III element. If the barrier layer is divided into a first part of the n-type semiconductor layer side and a second part of the p-type semiconductor layer side, an In composition ratio in the group III element of the second part is lower than an In composition ratio in the group III element of the first part. If the well layer is divided into a third part of the n-type semiconductor layer side and a fourth part of the p-type semiconductor layer side, an In composition ratio in the group III element of the fourth part is higher than an In composition ratio in the group III element of the third part. The In composition ratios of the barrier layer and the well layer are a composition ratio in which the energy band diagrams of valence bands of the well layer and the barrier layer become rectangular in a state in which a voltage is applied to the light-emitting layer.
摘要翻译：要解决的问题：提供具有高发光效率的半导体发光元件。解决方案：根据实施例的半导体发光元件包括包括氮化物半导体的n型半导体层，包括氮化物半导体的p型半导体层和发光层。发光层包括在从n型半导体层到p型半导体层的方向上包括III族元素和与阻挡层层叠的阱层的阻挡层，并且包括III族元素。如果阻挡层被分为n型半导体层侧的第一部分和p型半导体层侧的第二部分，则第二部分的III族元素中的In组成比低于In组成第一部分第三组元素的比例。如果阱层被分为n型半导体层侧的第三部分和p型半导体层侧的第四部分，则第四部分的III族元素中的In组成比高于In组成第三部分第三组元素的比例。阻挡层和阱层的In组成比是其中在向发光层施加电压的状态下阱层和势垒层的价带的能带图变为矩形的组成比。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2013030816A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2013030816A
公开(公告)日：2013-02-07
申请号：JP2012245828
申请日：2012-11-07
申请人： Toshiba Corp , 株式会社東芝
发明人： HIKOSAKA TOSHITERU , TACHIBANA KOICHI , NAGO HAJIME , NUNOUE SHINYA
IPC分类号： H01L33/06 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with low driving voltage and high luminous efficiency.SOLUTION: A semiconductor light-emitting element includes: an n-type layer composed of a nitride semiconductor; a p-type layer composed of the nitride semiconductor; and a stack that is provided between the n-type layer and the p-type layer and includes a plurality of barrier layers composed of the nitride semiconductor and well layers provided between the plurality of adjacent barrier layers, having smaller band-gap energy than the barrier layers, and composed of the nitride semiconductor, and in which at least a portion emits light. At least any of the plurality of barrier layers includes a first layer provided on the side of the n-type layer and a second layer provided on the side of the p-type layer and containing an n-type impurity with higher concentration than the first layer. At least any of the well layers includes a third layer provided on the side of the n-type layer and a fourth layer provided on the side of the p-type layer and containing the n-type impurity with higher concentration than the third layer.
摘要翻译：要解决的问题：提供具有低驱动电压和高发光效率的半导体发光元件。解决方案：半导体发光元件包括：由氮化物半导体构成的n型层; 由氮化物半导体构成的p型层; 以及设置在n型层和p型层之间的堆叠，并且包括由氮化物半导体构成的多个势垒层和设置在多个相邻阻挡层之间的阱层，具有比阻挡层，并且由氮化物半导体构成，并且其中至少一部分发光。多个阻挡层中的至少任一个包括设置在n型层一侧的第一层和设置在p型层一侧的第二层，并且含有比第一层高的浓度的n型杂质层。阱层中的至少任一个包括设置在n型层一侧的第三层和设置在p型层侧并且含有比第三层高的浓度的n型杂质的第四层。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2014130897A Semiconductor light-emitting element and method of manufacturing the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2014130897A
公开(公告)日：2014-07-10
申请号：JP2012287340
申请日：2012-12-28
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGO HAJIME , KIMURA SHIGEYA , HARADA YOSHIYUKI , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01L21/205 , H01S5/343
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/14 , H01L33/325 , H01S5/3211 , H01S5/3407 , H01S5/34333 , H01S5/34346
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high luminous efficiency and a method of manufacturing the same.SOLUTION: There is provided a semiconductor light-emitting element including an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer. The p-type semiconductor layer includes a first p-side layer composed of AlGaN (0≤x1
摘要翻译：要解决的问题：提供一种具有高发光效率的半导体发光元件及其制造方法。解决方案提供一种半导体发光元件，其包括n型半导体层，p型半导体层，和发光层。 p型半导体层包括由AlGaN（0≤x1<1）构成的第一p侧层，由AlGaN（0

6. 发明专利

JP2014033232A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2014033232A
公开(公告)日：2014-02-20
申请号：JP2013238147
申请日：2013-11-18
申请人： Toshiba Corp , 株式会社東芝
发明人： TACHIBANA KOICHI , NAGO HAJIME , HIKOSAKA TOSHIKI , KIMURA SHIGEYA , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01L33/06
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with high luminous efficiency.SOLUTION: A semiconductor light-emitting element includes: an n-type semiconductor layer including an N-type GaN layer; a p-type semiconductor layer composed of GaN; a light-emitting portion provided between the n-type semiconductor layer and the p-type semiconductor layer and including a plurality of quantum well layers; a first layer provided between the light-emitting portion and the p-type semiconductor layer, containing AlGaN having a first Al composition ratio from 0.001 or more to 0.05 or less, and having a thickness from 0.5 nm or more to 5 nm or less; a second layer being in contact with the p-type semiconductor layer between the first layer and the p-type semiconductor layer, and containing AlGaN having a second Al composition ratio from 0.1 or more to 0.2 or less; and an intermediate layer being in contact with the first layer and in contact with a p-side quantum well layer that is closest to the p-type semiconductor layer of the plurality of quantum well layers between the first layer and the light-emitting portion, having a thickness from 3 nm or more to 8 nm or less, and containing InGaN (0≤z1
摘要翻译：要解决的问题：提供具有高发光效率的半导体发光元件。解决方案：半导体发光元件包括：包括N型GaN层的n型半导体层; 由GaN构成的p型半导体层; 设置在n型半导体层和p型半导体层之间并且包括多个量子阱层的发光部分; 所述第一层设置在所述发光部和所述p型半导体层之间，所述第一层含有AlGaN的第一Al组成比为0.001以上且0.05以下，厚度为0.5nm以上至5nm以下的AlGaN; 第二层与第一层和p型半导体层之间的p型半导体层接触，并且含有第二Al组分比为0.1以上至0.2以下的AlGaN; 以及与第一层接触并与第一层和发光部之间的多个量子阱层的p型半导体层最接近的p侧量子阱层接触的中间层，具有3nm以上至8nm以下的厚度，并含有InGaN（0≤z1<1）。 Al组成比从第一层向第二层逐渐增加。

7. 发明专利

JP2014033029A Semiconductor light-emitting element and method of manufacturing the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2014033029A
公开(公告)日：2014-02-20
申请号：JP2012171527
申请日：2012-08-01
申请人： Toshiba Corp , 株式会社東芝
发明人： KIMURA SHIGEYA , NAGO HAJIME , TACHIBANA KOICHI , NUNOUE SHINYA
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01L33/32 , H01L33/0062 , H01L33/0075 , H01L33/06
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with high luminous efficiency.SOLUTION: A semiconductor light-emitting element comprises: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light-emitting layer. The light-emitting layer has a first well layer, a second well layer, and a first barrier layer. The first barrier layer is provided between the second well layer and the first well layer, is in contact with the second well layer and the first well layer, and has a lower In composition ratio than the first well layer and the second well layer. The first barrier layer has a first portion and a second portion. The first portion is provided between the first well layer and the second well layer, and is in contact with the second well layer. The second portion has a first region that is in contact with the first portion and has a first In composition ratio higher than the In composition ratio of the first portion; and a second region that is provided between the first region and the first well layer, is in contact with the first well layer, and has a second In composition ratio lower than the first In composition ratio.
摘要翻译：要解决的问题：提供具有高发光效率的半导体发光元件。解决方案：半导体发光元件包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层; 和发光层。发光层具有第一阱层，第二阱层和第一势垒层。第一阻挡层设置在第二阱层和第一阱层之间，与第二阱层和第一阱层接触，并且具有比第一阱阱层和第二阱层低的In组成比。第一阻挡层具有第一部分和第二部分。第一部分设置在第一阱层和第二阱层之间，并且与第二阱层接触。第二部分具有与第一部分接触并且具有高于第一部分的In组成比的第一In组成比的第一区域; 并且设置在所述第一区域和所述第一阱层之间的第二区域与所述第一阱层接触，并且具有低于所述第一In组成比的第二In组成比。

8. 发明专利

JP2012256948A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2012256948A
公开(公告)日：2012-12-27
申请号：JP2012218376
申请日：2012-09-28
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGO HAJIME , TACHIBANA KOICHI , HIKOSAKA TOSHITERU , KIMURA SHIGEYA , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01L33/06
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which relaxes stress in semiconductor layers to achieve high luminous efficiency at low operation voltage.SOLUTION: A semiconductor light emitting element comprises: a C-face n-type GaN layer; a p-type semiconductor layer containing a nitride semiconductor; a light emitting part provided between the C-face n-type GaN layer and the p-type semiconductor layer and including a plurality of laminated barrier layers each containing GaN, and well layers respectively provided between every adjacent barrier layers and each containing InGaN of a first In composition ratio; a multilayer structure provided between the C-face n-type GaN layer and the light emitting part, and including a plurality of laminated first layers and second layers respectively provided between every adjacent first layers and each containing InGaN of a second composition ratio which is not lower than 0.6 times higher than the first In composition ratio and lower than the first In composition ratio; and an n-side intermediate layer provided between the multilayer structure and the light emitting part, and including a plurality of laminated third layers and fourth layers respectively provided between every adjacent third layers.
摘要翻译：要解决的问题：提供一种半导体层中的应力松弛的半导体发光元件，以在低工作电压下实现高发光效率。解决方案：半导体发光元件包括：C面n型GaN层; 含有氮化物半导体的p型半导体层; 设置在C面n型GaN层和p型半导体层之间的发光部分，并且包括分别设置在每个相邻阻挡层之间的每个包含GaN的多个层压势垒层和分别包含GaN的InGaN的阱层第一组成比; 设置在C面n型GaN层和发光部之间的多层结构，并且包括分别设置在每个相邻的第一层之间的多个层叠的第一层和第二层，并且每个包含不是第二组成比的InGaN 低于第一组成比的0.6倍以上，低于第一组分比; 以及设置在所述多层结构和所述发光部之间的n侧中间层，并且包括分别设置在每个相邻的第三层之间的多个层叠的第三层和第四层。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2012191236A Vapor phase growth device 有权
标题翻译：蒸汽相生长装置
公开(公告)号：JP2012191236A
公开(公告)日：2012-10-04
申请号：JP2012132290
申请日：2012-06-11
申请人： Toshiba Corp , 株式会社東芝
发明人： HARADA YOSHIYUKI , TACHIBANA KOICHI , HIKOSAKA TOSHITERU , NAGO HAJIME , NUNOUE SHINYA
IPC分类号： H01L21/205 , C23C16/455 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth device allowing individual semiconductor layers having different compositions to be formed with high in-plane uniformity and high repeatability.SOLUTION: The vapor phase growth device allows a nitride-based semiconductor layer to be subjected to vapor phase growth on a substrate by using a group III material gas and a group V material gas. The vapor phase growth device includes: a reaction chamber configured to place the substrate therein; a first gas supply section which is connected to the reaction chamber and supplies either one of the group III and V material gases to the substrate; and a second gas supply section which is connected to the reaction chamber and supplies the other of the group III and V material gases to the substrate. At lease one of the first and second gas supply sections includes a mixing section for mixing the group III and V material gases. These gas supply sections can switch the operation of allowing a first semiconductor layer to grow by supplying one of the group III and V material gases, and the operation of allowing a second semiconductor layer having a different III composition ratio from the first semiconductor layer to grow by supplying a mixed gas.
摘要翻译：要解决的问题：提供允许具有高的面内均匀性和高重复性的具有不同组成的各个半导体层的气相生长装置。解决方案：气相生长装置允许氮化物基半导体层通过使用III族材料气体和V族材料气体在衬底上进行气相生长。气相生长装置包括：反应室，其构造成将基板放置在其中; 第一气体供给部，其连接到所述反应室，并且将III族和V类材料气体中的任一种供给到所述基板; 以及第二气体供给部，其连接到所述反应室并将所述III族和V类材料气体中的另一种供给到所述基板。第一和第二气体供应部分中的至少一个包括用于混合组III和V材料气体的混合部分。这些气体供给部可以通过供给III族和V族材料气体中的一种来切换允许第一半导体层生长的操作，并且允许具有与第一半导体层不同的III组成比的第二半导体层的生长通过供给混合气体。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2011258994A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2011258994A
公开(公告)日：2011-12-22
申请号：JP2011209882
申请日：2011-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGO HAJIME , TACHIBANA KOICHI , SAITO SHINJI , HARADA YOSHIYUKI , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01L33/06
CPC分类号： H01L33/32 , H01L33/06
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of obtaining a light-emitting diode with high luminous efficiency.SOLUTION: A light-emitting diode comprises: a ground layer 20 formed of GaN; and a light-emitting layer 30 that is formed on the ground layer and in which a barrier layer formed of InAlGaN having a smaller lattice constant than that of the ground layer and a quantum well layer formed of InGaN having a larger lattice constant than that of the ground layer are alternately stacked. The light-emitting diode is operated at current densities of 100 A/cmor more. The Al composition or the In composition is inclined in the barrier layer.
摘要翻译：要解决的问题：提供能够获得具有高发光效率的发光二极管的半导体器件。解决方案：发光二极管包括：由GaN形成的接地层20; 以及形成在接地层上的发光层30，其中由具有比接地层的晶格常数更小的晶格常数的InAlGaN形成的势垒层和由具有大于晶体常数的InGaN形成的量子阱层的发光层30 接地层交替堆叠。发光二极管的电流密度以100A / cm 2 以上。 Al组分或In组成在阻挡层中倾斜。版权所有（C）2012，JPO＆INPIT

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