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JP2013197128A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013197128A
公开(公告)日：2013-09-30
申请号：JP2012059591
申请日：2012-03-16
申请人： Toshiba Corp , 株式会社東芝
发明人： KATO KAZUHIRO , TSURUMI HIROYUKI , SATO YUKIO , IKIMURA TAKEHITO , KUMAMOTO AKIRA , YAMAMOTO HIROYUKI , IMAKAKE SHOICHI , ASAKAWA TORU
IPC分类号： H01L21/822 , H01L21/8238 , H01L27/04 , H01L27/06 , H01L27/092
CPC分类号： H02H3/08 , H01L27/0255 , H02H9/041
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a circuit area.SOLUTION: In a semiconductor device, a first resistor has one end connected to a first power supply terminal to which a first power supply voltage is applied. A capacitor is connected between the other end of the first resistor and a second power supply terminal to which a second power supply voltage is applied. A first transistor has a source connected to the first power supply terminal, and a gate connected to a connection point between the first resistor and the capacitor. A second resistor is connected between a drain of the first transistor and the second power supply terminal. A first diode is connected between the gate and the source of the first transistor and in a reverse direction to a polarity of a voltage generated at the first resistor. A second transistor has a drain connected to the first power supply terminal, a source connected to the second power supply terminal, and a gate driven by an output of the first transistor. A second diode is connected between the gate and the source of the second transistor and in a reverse direction to a polarity of a voltage generated at the second resistor.
摘要翻译：要解决的问题：提供能够减小电路面积的半导体器件。解决方案：在半导体器件中，第一电阻器的一端连接到施加有第一电源电压的第一电源端子。电容器连接在第一电阻器的另一端和施加第二电源电压的第二电源端子之间。第一晶体管具有连接到第一电源端子的源极和连接到第一电阻器和电容器之间的连接点的栅极。第二电阻器连接在第一晶体管的漏极和第二电源端子之间。第一二极管连接在第一晶体管的栅极和源极之间，并且与第一电阻器产生的电压的极性相反。第二晶体管具有连接到第一电源端子的漏极，连接到第二电源端子的源极和由第一晶体管的输出驱动的栅极。第二二极管连接在第二晶体管的栅极和源极之间，并且与第二电阻器产生的电压的极性相反。

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