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1. 发明专利

JPS6182437A Manufacture of semiconductor wafer 失效
标题翻译：半导体波导的制造
公开(公告)号：JPS6182437A
公开(公告)日：1986-04-26
申请号：JP20492084
申请日：1984-09-29
申请人： Toshiba Ceramics Co Ltd
发明人： FUI KUNIHIKO , TAKAI NORIHEI , KIRINO YOSHIO
IPC分类号： H01L21/322
CPC分类号： H01L21/3221
摘要： PURPOSE:To improve the gettering effect by heat treating a semiconductor wafer to form a nondefect layer on the outer periphery and a defective region therein, and removing only the nondefect layer on one surface to expose the defective region. CONSTITUTION:After a silicon wafer 1 is heat treated at a high temperature, it is heat treated at a low temperature. Oxygen between lattices near the outer periphery of the wafer 1 is externally diffused by a high temperature heat treatment to form a nondefect layer 2 on the outer periphery of the wafer 1, and oxygen precipitate nuclide or a defective region 3 having ultrafine defects grown from the nuclide is formed in the wafer 1 by a low temperature heat treatment. Only the layer 2 on one surface of the wafer 1 is removed to expose the region 3, and the other surface is mirror-polished. Then, when it is thrown in a device process of the wafer 1, crystal defects are grown on the region 3 in the wafer and the back surface. Excellent gettering effect is performed by the mutual effect of the intrinsic gettering effect of the region 3 and the extrinsic gettering effect of the back surface of the wafer 1.
摘要翻译：目的：通过热处理半导体晶片以在外周上形成不良层并且在其中形成缺陷区域，并且仅去除一个表面上的非缺陷层以暴露缺陷区域来提高吸气效果。构成：在硅晶片1在高温下进行热处理后，在低温下进行热处理。在晶片1的外周附近的晶格之间的氧气通过高温热处理而外部扩散，以在晶片1的外周形成非缺陷层2，并且氧析出的核素或具有超细缺陷的缺陷区3从通过低温热处理在晶片1中形成核素。仅去除晶片1的一个表面上的层2以暴露区域3，并且另一个表面被镜面抛光。然后，当晶片1的器件工艺被投入时，在晶片和背面的区域3上生长晶体缺陷。通过区域3的固有吸气效应和晶片1的背面的外在吸气效应的相互作用实现优异的吸气效果。

2. 发明专利

JPS61141696A Production unit for single crystal 失效
标题翻译：单晶生产单位
公开(公告)号：JPS61141696A
公开(公告)日：1986-06-28
申请号：JP26090184
申请日：1984-12-12
申请人： Toshiba Ceramics Co Ltd
发明人： KIRINO YOSHIO , FUSHII KUNIHIKO , TAKAI NORIHEI , MATSUDA MASATO
IPC分类号： C30B15/10 , H01L21/18 , H01L21/208
摘要： PURPOSE: In growing single crystal by crystal pulling method, to raise cooling rate of single crystal immediately after growth, and to prevent occurrence of crystal defects, by integrating a cylindrical crucible to put melt in it with a piston, and making the inner volume of the crucible variable.
CONSTITUTION: The bottom of the cylindrical crucible 4 made of quartz, etc. is engaged with the piston 7. A crystal raw material is put in the cylindrical crucible 4, heated by the heating element 9 into the melt 8. The piston 7 is raised, the surface of the melt 8 is raised to the vicinity of the top of the cylindrical crucible 4, and the single crystal 2 is pulled up by seed crystal set the tip of a pulling shaft. The surface of the melt 8 is always kept in the vicinity of the top of the cylindrical crucible 4 by the action of the piston 7, while the single crystal 2 is being pulled up. Consequently, heat radiation from the inner face of the crucible 4 does not reach the pulled crystal 2, so the single crystal 2 immediately after growing can be quenched.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过晶体拉伸法生长单晶，在生长后立即提高单晶的冷却速度，防止晶体缺陷的发生，通过将圆柱形坩埚整体放入活塞中，使其内部容积坩埚变量。构成：由石英等制成的圆柱形坩埚4的底部与活塞7接合。将晶体原料放入圆筒形坩埚4中，由加热元件9加热到熔体8中。活塞7升高，将熔融物8的表面升高到圆筒状坩埚4的顶部附近，通过设置牵引轴的前端的晶种将单晶2拉起。当单晶2被拉起时，熔体8的表面总是通过活塞7的作用保持在圆柱形坩埚4的顶部附近。因此，来自坩埚4的内表面的热辐射不会到达拉晶体2，因此可以使刚刚生长的单晶2淬火。

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