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1. 发明专利

JPS61141696A Production unit for single crystal 失效
标题翻译：单晶生产单位
公开(公告)号：JPS61141696A
公开(公告)日：1986-06-28
申请号：JP26090184
申请日：1984-12-12
申请人： Toshiba Ceramics Co Ltd
发明人： KIRINO YOSHIO , FUSHII KUNIHIKO , TAKAI NORIHEI , MATSUDA MASATO
IPC分类号： C30B15/10 , H01L21/18 , H01L21/208
摘要： PURPOSE: In growing single crystal by crystal pulling method, to raise cooling rate of single crystal immediately after growth, and to prevent occurrence of crystal defects, by integrating a cylindrical crucible to put melt in it with a piston, and making the inner volume of the crucible variable.
CONSTITUTION: The bottom of the cylindrical crucible 4 made of quartz, etc. is engaged with the piston 7. A crystal raw material is put in the cylindrical crucible 4, heated by the heating element 9 into the melt 8. The piston 7 is raised, the surface of the melt 8 is raised to the vicinity of the top of the cylindrical crucible 4, and the single crystal 2 is pulled up by seed crystal set the tip of a pulling shaft. The surface of the melt 8 is always kept in the vicinity of the top of the cylindrical crucible 4 by the action of the piston 7, while the single crystal 2 is being pulled up. Consequently, heat radiation from the inner face of the crucible 4 does not reach the pulled crystal 2, so the single crystal 2 immediately after growing can be quenched.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过晶体拉伸法生长单晶，在生长后立即提高单晶的冷却速度，防止晶体缺陷的发生，通过将圆柱形坩埚整体放入活塞中，使其内部容积坩埚变量。构成：由石英等制成的圆柱形坩埚4的底部与活塞7接合。将晶体原料放入圆筒形坩埚4中，由加热元件9加热到熔体8中。活塞7升高，将熔融物8的表面升高到圆筒状坩埚4的顶部附近，通过设置牵引轴的前端的晶种将单晶2拉起。当单晶2被拉起时，熔体8的表面总是通过活塞7的作用保持在圆柱形坩埚4的顶部附近。因此，来自坩埚4的内表面的热辐射不会到达拉晶体2，因此可以使刚刚生长的单晶2淬火。

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