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    • 1. 发明专利
    • Input/output conversion element
    • 输入/输出转换元件
    • JPS58186981A
    • 1983-11-01
    • JP6879582
    • 1982-04-26
    • Toray Ind Inc
    • KIMURA KUNIKOMIYA TAKAODAITOU KOUJI
    • H01L41/08H01G7/00H01L41/107
    • H01L37/02H01L41/317
    • PURPOSE:To provide an electric input/output conversion element which is machined to utilize merits of flexibility, light weight and high sensitivity of a thinned piezoelectric film to the maximum limit by obtaining the thinned piezoelectric film by coating a high molecular film having excellent piezoelectric property, for example, from a VDF-TrFE copolymer solution. CONSTITUTION:P(VDF-TrFE) of 74-26mol% of composition ratio of VDF-TrFE is dissolved in a solvent DMF as a solution of high molecular copolymer. This solution is deposited in advance on the upper surface of a base film which is made of polyethylene terephthalate, thereby coating it on an aluminum electrode to obtain a thin film of high molecular copolymer. Al electrode is formed by depositing on the thin film, heat treated as both electrodes, and then polarized several times, thereby obtaining pyroelectric element. This element generates pyroelectricity for the variation in the temperature and is used as a fire alarm heat detector. A high molecular piezoelectric film can be coated in a thin film, and piezoelectric property is thereafter imparted by polling, and there are copolymer of cyanovinylidene and a high molecular polymer which contains vinylacetate or cyano group such as polyacrylonitryle.
    • 目的:提供一种电动输入/输出转换元件,通过涂覆具有优异的压电性能的高分子膜,通过获得薄的压电膜,通过机加工来利用薄膜压电薄膜的柔性,重量轻和高灵敏度的最大极限 ,例如,从VDF-TrFE共聚物溶液。 构成:将作为VDF-TrFE的组成比的74-26mol%的P(VDF-TrFE)作为高分子量共聚物的溶液溶解在溶剂DMF中。 将该溶液预先沉积在由聚对苯二甲酸乙二醇酯制成的基膜的上表面上,由此将其涂覆在铝电极上,得到高分子量共聚物的薄膜。 Al电极通过沉积在薄膜上,作为两个电极进行热处理,然后偏振几次,从而获得热电元件。 该元件为温度变化产生热电,并用作火灾报警热检测器。 可以将高分子压电膜涂布在薄膜中,然后通过轮廓赋予压电性,并且存在含有乙酸乙烯酯或氰基如聚丙烯薄膜的氰基亚乙烯基和高分子量聚合物的共聚物。
    • 2. 发明专利
    • Ferroelectric high-polymer memory
    • 电磁高分子存储器
    • JPS61105792A
    • 1986-05-23
    • JP22042285
    • 1985-10-04
    • Toray Ind Inc
    • KIMURA KUNIKOMIYA TAKAODAITO KOJI
    • G11C11/42G11C13/02
    • G11C11/22B82Y10/00H01L21/28291H01L27/12
    • PURPOSE: To obtain a lightweight and thin type ferroelectric high-polymer memory having high sensitivity by forming a thin ferroelectric high-polymer film layer over the entire surface on the electrode side of an insulating substrate having an electrode layer on the surface and providing the 2nd electrode layer on the surface of said layer.
      CONSTITUTION: The plural belt-like 1st electrodes 1 are formed of a transparent dielectric material consisting of a metal such as Al or Ni or ITO, etc. on the surface of the insulating substrate 2 consisting of org. and inorg. glass or high-polymer film of polyester, etc. The thin ferroelectric high-polymer film layer 3 is coated over the entire surface of the electrode 1 and the substrate 2 by a method for coating a soln. of a ferroelectric high-polymer compd. sch as copolymer consisting essentially of vinylidene fluoride and trifluoroethylene and drying the same. The plural 2nd electrodes 4 intersecting orthogonally with the electrodes 1 are then formed on the layer 3. The high-polymer memory obtd. in such a manner is subjected to poling (polarity adjustment) by applying ≥300KV/cm electric field between the electrodes 1 and 4 at a room temp., the higher electric field at a low temp. and the lower electric field at a high temp. A laser beam is irradiated to the part subjected to the poling and the pyroelectric current between the electrodes 1 and 4 is detected and read. The thinner and lighter memory having the high sensitivity is thus obtd.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:通过在表面上具有电极层的绝缘基板的电极侧的整个表面上形成薄的铁电高分子薄膜层来获得具有高灵敏度的轻质和薄型铁电高分子记忆体,并提供第二 所述层的表面上的电极层。 构成:多个带状的第一电极1由绝缘基板2的由有机层组成的表面上的由Al或Ni或ITO等金属构成的透明电介质材料形成。 和inorg。 聚酯等的玻璃或高分子膜。薄铁电高分子膜层3通过涂布溶胶的方法涂覆在电极1和基板2的整个表面上。 的铁电高分子化合物 作为基本上由偏二氟乙烯和三氟乙烯组成的共聚物并将其干燥。 然后在层3上形成与电极1正交交叉的多个第二电极4.高分子记忆体。 通过在室温下在电极1和4之间施加> = 300KV / cm的电场,以低温下的较高电场以这种方式进行极化(极性调整)。 和较高的电场。 对经受极化的部分照射激光束,检测并读出电极1和4之间的热电流。 因此,具有高灵敏度的更薄和更轻的存储器被实现。
    • 3. 发明专利
    • Ferrodielectric high polymer thin film
    • 低电压高聚合物薄膜
    • JPS6148983A
    • 1986-03-10
    • JP17080584
    • 1984-08-16
    • Toray Ind Inc
    • KIMURA KUNIKODAITO KOJI
    • G11C11/22H01L41/08
    • PURPOSE: To manufacture an electric device having good electric response property, and, moreover, operates with low voltage, by a method wherein the thickness of a ferrodielectric high polymer thin film is made under 1,000Å.
      CONSTITUTION: Copolymerizate of vinyliden fluoride and trifluoroethylene are dissolved in dimethylformamide solvent and are made high polymer solution. This solution is painted by a spin coating method on a glass plate on which Al is deposited at the condition divided as electrodes 5, and a thin film 1 is obtained by performing heat treatment. The thickness of the thin film is made under 1,000Å. Electrodes 6 are provided so as to become matrix disposition between lower electrodes by Al deposition again on the upside of this thin film 1.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:制造具有良好的电响应特性的电气装置,并且还可以通过其中将电介质高分子薄膜的厚度设为1000A以下的方法进行低电压运转。 构成:将亚乙烯基氟化物和三氟乙烯的共聚物溶解在二甲基甲酰胺溶剂中,并制成高聚物溶液。 该溶液通过旋转涂布法涂布在其上分散有电极5的条件下沉积Al的玻璃板上,通过进行热处理获得薄膜1。 薄膜的厚度在1000A以下。 电极6通过在该薄膜1的上侧再次通过Al沉积而设置成在下部电极之间成为矩阵配置。