专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2007291426A Coaxial type vacuum arc vapor deposition source and vapor deposition apparatus using the same 有权
标题翻译：同轴型真空蒸汽沉积源和蒸气沉积装置
公开(公告)号：JP2007291426A
公开(公告)日：2007-11-08
申请号：JP2006118144
申请日：2006-04-21
申请人： Tokyo Institute Of Technology , Ulvac Japan Ltd , 国立大学法人東京工業大学 , 株式会社アルバック
发明人： AGAWA YOSHIAKI , SAITO ATSUSHI , HARA YASUHIRO , SAKAE KENICHIRO , HATA SEIICHI , YAMAUCHI RYUSUKE , SAKURAI JUNPEI , SHIMOKAWABE AKIRA
IPC分类号： C23C14/24 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a coaxial type vacuum arc vapor deposition source where a short circuit between a vapor deposition material and a trigger electrode is prevented, and stable arc discharge can be performed, and to provide a vapor deposition apparatus using the same. SOLUTION: The coaxial type vacuum arc vapor deposition source comprises: a cylindrical anode electrode 6; a columnar vapor deposition material 7 whose central axis is nearly aligned with the central axis of the anode electrode 6, and arranged at the inside of the anode electrode 6; a cylindrical insulating material 8 arranged around the vapor deposition material 7; and a cylindrical trigger electrode 9 arranged around the insulating member 8. Arc discharge is induced between the anode electrode 6 and the vapor deposition material 7 by trigger discharge between the trigger electrode 9 and the vapor deposition material 7, and particles released from the vapor deposition material 7 are released from an anode release port 60. The edge face 7a on the side of the anode release port 60 in the vapor deposition material 7 is arranged so as to be recessed only by a first recess reference value with respect to the edge face 8a on the side of the anode release port 60 in the insulating member 8, and the edge face 9a on the side of the anode release port 60 in the trigger electrode 9 is arranged so as to be recessed only by a second recess reference value with respect to the edge face 8a on the side of the anode release port 60 in the insulating member 8. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种同时型真空电弧气相沉积源，其中防止气相沉积材料和触发电极之间的短路，并且可以进行稳定的电弧放电，并提供使用一样。解决方案：同轴型真空电弧气相沉积源包括：圆柱形阳极电极6; 柱状蒸镀材料7，其中心轴与阳极电极6的中心轴线大致对准，并配置在阳极电极6的内部; 布置在气相沉积材料7周围的圆柱形绝缘材料8; 以及布置在绝缘构件8周围的圆柱形触发电极9.通过触发电极9和气相沉积材料7之间的触发放电，在阳极6和气相沉积材料7之间引起电弧放电，并且从气相沉积材料7从阳极释放口60释放。气相沉积材料7中的阳极释放口60侧的边缘面7a被布置成仅相对于边缘面凹入第一凹槽参考值 8a，在绝缘构件8中的阳极释放口60侧，并且触发电极9中的阳极释放口60一侧的边缘面9a被布置成仅凹入第二凹槽基准值，相对于绝缘构件8中的阳极释放口60侧的边缘面8a。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007291425A Coaxial vacuum arc vapor deposition source, and vapor deposition apparatus using the same 有权
标题翻译：同轴真空蒸发器沉积源和蒸气沉积装置
公开(公告)号：JP2007291425A
公开(公告)日：2007-11-08
申请号：JP2006118143
申请日：2006-04-21
申请人： Tokyo Institute Of Technology , Ulvac Japan Ltd , 国立大学法人東京工業大学 , 株式会社アルバック
发明人： SAKAE KENICHIRO , SAITO ATSUSHI , HARA YASUHIRO , AGAWA YOSHIAKI , HATA SEIICHI , YAMAUCHI RYUSUKE , SAKURAI JUNPEI , SHIMOKAWABE AKIRA
IPC分类号： C23C14/24 , H01J37/34 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To provide a coaxial vacuum arc vapor deposition source capable of stabilizing the trigger discharge and suppressing occurrence of any trouble of the arc discharge, and a vapor deposition apparatus using the same.
SOLUTION: The coaxial vacuum arc vapor deposition source comprises a cylindrical anode electrode 6, a columnar vapor deposition material 7 arranged inside the anode electrode 6 with its center axis being substantially matched with the center axis of the anode electrode 6, a cylindrical insulating member 8 tightly fitted around the vapor deposition material 7, and a cylindrical trigger electrode 9 tightly fitted around the insulating member 8. The trigger discharge is performed between the trigger electrode 9 and the vapor deposition material 7 to induce the arc discharge between the anode electrode 6 and the vapor deposition material 7, and particles emitted from a side surface of the vapor deposition material 7 are emitted from an aperture of the anode electrode 6. A slit part 20 extending in its axial direction for partially cutting the insulating member 8 is formed in the insulating member 8, and a slit part 30 extending in its axial direction for partially cutting the trigger electrode 9 is formed in the trigger electrode 9. The trigger electrode 9 is fastened by a fastening mechanism 40.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够稳定触发放电并抑制电弧放电的任何问题的同轴真空电弧气相沉积源，以及使用其的蒸镀装置。解决方案：同轴真空电弧气相沉积源包括圆柱形阳极电极6，布置在阳极电极6内部的柱状气相沉积材料7，其中心轴线基本上与阳极电极6的中心轴线相匹配，圆柱形绝缘构件8紧密地装配在蒸镀材料7周围，圆筒形触发电极9紧密配合在绝缘构件8周围。触发放电在触发电极9和蒸镀材料7之间进行，以在阳极电极6和气相沉积材料7，从蒸镀材料7的侧面发射的粒子从阳极电极6的孔射出。沿轴向延伸以部分切割绝缘构件8的狭缝部20为形成在绝缘构件8中的狭缝部30和沿其轴向延伸的狭缝部30，以部分地切割触发器el 电极9形成在触发电极9中。触发电极9通过紧固机构40紧固。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008081810A Exhaust system and exhaust method 有权
标题翻译：排气系统和排气方法
公开(公告)号：JP2008081810A
公开(公告)日：2008-04-10
申请号：JP2006264565
申请日：2006-09-28
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： KATSUMATA TAKASHI , HARA YASUHIRO , SUZUKI YASUMASA , YAMAGUCHI KOICHI
IPC分类号： C23C16/44 , C01B31/02
摘要： PROBLEM TO BE SOLVED: To provide an exhaust system and an exhaust method where the exhaust of combustible gas can be always stably performed.
SOLUTION: The exhaust system includes: a vacuum pump 27 exhausting a reaction chamber 22a; a main exhaust valve 26 arranged between the reaction chamber 22a and the vacuum pump 27; a dilution gas introduction part 28 for diluting process gas exhausted by the vacuum pump 27 with dilution gas; and exhaust flow rate control means (34, 36) capable of controlling the flow rate of the process gas exhausted by the vacuum pump 27. Then, e.g., in the case, after unexpected power interception such as a power failure, driving is restarted, the exhaust flow rate of the process gas is limited by the exhaust flow rate control means, and the exhaust flow rate is gradually increased.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以始终稳定地执行可燃气体排放的排气系统和排气方法。解决方案：排气系统包括：排出反应室22a的真空泵27; 布置在反应室22a和真空泵27之间的主排气阀26; 用稀释气体稀释由真空泵27排出的处理气体的稀释气体导入部28; 以及能够控制由真空泵27排出的处理气体的流量的排气流量控制装置（34,36）。然后，例如在这种情况下，在电力故障等意外的电力拦截之后，重新起动，处理气体的排气流量由排气流量控制单元限制，排气流量逐渐增大。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007308787A Arc vapor deposition source and film deposition apparatus 有权
标题翻译： ARC蒸气沉积源和膜沉积装置
公开(公告)号：JP2007308787A
公开(公告)日：2007-11-29
申请号：JP2006141960
申请日：2006-05-22
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , SAITO ATSUSHI , HARA YASUHIRO , AMANO SHIGERU , MATSUURA MASAMICHI , CHIN KOKUKA
IPC分类号： C23C14/32
摘要： PROBLEM TO BE SOLVED: To provide an arc vapor deposition source capable of performing the film deposition on a large area with less production of droplets.
SOLUTION: A vapor deposition material 25 is arranged on a cooling electrode 23, a refrigerant is made to flow in a circulation pipe 30 in a supporting electrode 22 and to circulate in the cooling electrode 23, so that the surface is not melted. A magnetic field forming apparatus 29 is provided in a backing plate 24 to collect plasma at the center of the vapor deposition material 25 and to emit steam from the center. Further, an erosion stop body 28 is provided around the vapor deposition material 25 to prevent a peripheral part from being eroded. Thus, the production of droplets is prevented, and utilizing efficiency of the vapor deposition material 25 is enhanced.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够以较少的液滴产生在大面积上进行膜沉积的电弧气相沉积源。解决方案：在冷却电极23上配置蒸镀材料25，使制冷剂在支撑电极22的循环管30内流动，并在冷却电极23中循环，使得表面不熔化。在背板24中设置磁场形成装置29，以在蒸镀材料25的中央收集等离子体，并从中心喷出蒸气。此外，在蒸镀材料25的周围设置有腐蚀停止体28，以防止周边部分被侵蚀。因此，防止了液滴的产生，提高了蒸镀材料25的利用效率。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007254762A Method for producing nanoparticle 有权
标题翻译：生产纳米材料的方法
公开(公告)号：JP2007254762A
公开(公告)日：2007-10-04
申请号：JP2006076774
申请日：2006-03-20
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , HARA YASUHIRO , AMANO SHIGERU , SAITO ATSUSHI
IPC分类号： B22F9/14 , B01J19/08 , C23C14/24
摘要： PROBLEM TO BE SOLVED: To provide nanoparticles containing no large particles regarding a technique for producing nanoparticles.
SOLUTION: An evaporation material 135 is arranged at a coaxial type arc deposition source 13, and the vapor of the evaporation material is released into an anode electrode 131 by arc discharge. Electrons receive Lorentz force from a magnetic field formed by arc current, so as to be discharged into a vacuum tank 10. Fine vapor having a positive charge is attracted to the electrons, is released into the vacuum tank 10, and is stuck to the surface of a collection plate 20, so as to form the nanoparticles of the evaporation material. Huge droplets are collided against the wall face of the anode electrode 131, and are not released into the vacuum tank 10.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种纳米粒子制造技术中不含有大粒子的纳米粒子。解决方案：蒸发材料135布置在同轴电弧沉积源13处，蒸发材料的蒸汽通过电弧放电释放到阳极131中。电子从由电弧电流形成的磁场接收洛伦兹力，以便被排放到真空槽10中。具有正电荷的微细蒸汽被吸引到电子中，被释放到真空槽10中并被粘附到表面的集合板20，以形成蒸发材料的纳米颗粒。巨大的液滴与阳极131的壁面相撞，不会释放到真空槽10中。（C）2008，JPO＆INPIT

6. 发明专利

JP2007247032A Apparatus and method for manufacturing diamond film 有权
标题翻译：用于制造金刚石膜的装置和方法
公开(公告)号：JP2007247032A
公开(公告)日：2007-09-27
申请号：JP2006075404
申请日：2006-03-17
申请人： Institute Of National Colleges Of Technology Japan , Kyushu Univ , Ulvac Japan Ltd , 国立大学法人九州大学 , 株式会社アルバック , 独立行政法人国立高等専門学校機構
发明人： YOSHITAKE TAKESHI , NISHIYAMA TAKASHI , NAGAYAMA KUNIHITO , HARA TAKESHI , AGAWA YOSHIAKI , HARA YASUHIRO , AMANO SHIGERU
IPC分类号： C23C14/06 , C23C14/24 , C30B29/04
摘要： PROBLEM TO BE SOLVED: To provide a technology of depositing a polycrystal diamond film (UNCD: Ultra Nano Crystal Diamond) of 3-10 nm thickness.
SOLUTION: The trigger discharge is generated between a cathode electrode 132 consisting of graphite and a trigger electrode 134. The arc discharge is induced between the anode electrode 131 and the cathode electrode 132 to emit ions of carbon vapor into a vacuum tank 10. The inside of the vacuum tank 10 is set in a hydrogen gas atmosphere, and carbon vapor having charges is allowed to reach an object 20 for film deposition. A UNCD grows when a SiC film 22 is deposited on a surface of the object 20.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供沉积3-10nm厚度的多晶金刚石膜（UNCD：Ultra Nano Crystal Diamond）的技术。解决方案：在由石墨和触发电极134组成的阴极电极132之间产生触发放电。在阳极电极131和阴极电极132之间感应出电弧放电，以将碳蒸汽离子发射到真空容器10 将真空槽10的内部设置在氢气气氛中，使具有电荷的碳蒸汽到达用于成膜的物体20。当SiC膜22沉积在物体20的表面上时，UNCD生长。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2007154230A Film-forming apparatus 有权
标题翻译：电影制作装置
公开(公告)号：JP2007154230A
公开(公告)日：2007-06-21
申请号：JP2005348337
申请日：2005-12-01
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , SAITO ATSUSHI , HARA YASUHIRO
IPC分类号： C23C14/32
摘要： PROBLEM TO BE SOLVED: To provide a film-forming apparatus with which a thin film having good film quality can efficiently be formed.
SOLUTION: The film-forming apparatus 1 in this invention has a magnetic field forming means 50, and this magnetic field forming means 50 is constituted so as to form line of magnetic force in the direction crossed at the right angle to the emitted axis F of the emitted grains from an opening hole 36. In the grains emitted from the opening hole 36, electrons are flown to a substrate 11 side by bending this flying direction toward the substrate 11 side with the line of magnetic force, and the electric charged grains 45 are attracted to the electrons flown to the substrate 11 side and this flying direction is bent to the direction toward the substrate 11. Since the big grain 46 is straightly travelled without receiving the effect of the line of magnetic force, the electric charged grains 45 are reached to the substrate 11, but the big grain 46 is not reached and thus, the thin film having good film quality is formed on the surface of the substrate 11.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以有效地形成具有良好的膜质量的薄膜的成膜装置。解决方案：本发明的成膜装置1具有磁场形成装置50，该磁场形成装置50构成为在与所发射的直角交叉的方向上成直角交叉的方向形成磁力线从开孔36发射的晶粒中，通过用磁力线将该飞行方向朝向基板11侧弯曲而将电子流向基板11侧，并且电带电颗粒45被吸引到流到基板11侧的电子，并且该飞行方向被弯曲到朝向基板11的方向。由于大颗粒46被直线行进而不受到磁力线的影响，所以带电晶粒45到达基板11，但是没有到达大颗粒46，因此在基板11的表面上形成具有良好薄膜质量的薄膜。（C）2007，JPO＆INPIT

8. 发明专利

JP2006249558A Vapor deposition apparatus 有权
标题翻译：蒸气沉积装置
公开(公告)号：JP2006249558A
公开(公告)日：2006-09-21
申请号：JP2005071526
申请日：2005-03-14
申请人： Kyushu Univ , Ulvac Japan Ltd , 国立大学法人九州大学 , 株式会社アルバック
发明人： YOSHITAKE TAKESHI , AGAWA YOSHIAKI , HARA YASUHIRO , SAKAE KENICHIRO , AMANO SHIGERU , CHIN KOKUKA
IPC分类号： C23C14/24
摘要： PROBLEM TO BE SOLVED: To deposit thin films free of defects due to droplets.
SOLUTION: When a filter apparatus 20 of a rotor blade type is arranged between a vapor deposition source 30 and a film-deposition object 5, and is rotated around a revolving axis 25, giant particles of a large mass and low flying speed collide against blade members 22 of the filter apparatus 20 and minute particles of a small mass and high flying speed pass between the blade members 22, arriving at the film-deposition object 5. Since the droplets are removed, flat thin films free of defects can be obtained.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：沉积没有液滴缺陷的薄膜。解决方案：当转子叶片型过滤器装置20布置在气相沉积源30和成膜物体5之间并且围绕旋转轴线25旋转时，大质量和低飞行速度的巨型颗粒与过滤器装置20的叶片构件22碰撞，并且在叶片构件22之间的小质量和高飞行速度的微小颗粒通过到达成膜物体5。由于液滴被去除，没有缺陷的平坦薄膜可以得到。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2006083431A Vapor deposition source and vapor deposition apparatus 有权
标题翻译：蒸气沉积源和蒸气沉积装置
公开(公告)号：JP2006083431A
公开(公告)日：2006-03-30
申请号：JP2004269925
申请日：2004-09-16
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SAKAE KENICHIRO , CHIN KOKUKA , AMANO SHIGERU , HARA YASUHIRO , AGAWA YOSHIAKI
IPC分类号： C23C14/24 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus which forms a thin film of high film qualities.
SOLUTION: This vapor deposition source has a structure in which an upper end part of a cylindrical anode electrode 21 is removed to form a cut part 22 so that an inner wall surface of the anode electrode 21 can not exist in the part visible from a substrate 13. Accordingly, droplets are not produced in the part visible from the substrate 13, and the droplets do not arrive at a substrate surface. Charged microparticles move while twining around magnetic lines of force 17, and arrive at the surface of the substrate 13 to grow the thin film.
COPYRIGHT: (C)2006,JPO&NCIPI

10. 发明专利

JP2006009073A Thermal cvd system 有权
标题翻译：热CVD系统
公开(公告)号：JP2006009073A
公开(公告)日：2006-01-12
申请号：JP2004185930
申请日：2004-06-24
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , MIURA OSAMU , KIKUCHI MASASHI , OGATA HIDEYUKI , OBA MASATOSHI , HARA YASUHIRO , MURAKAMI HIROHIKO
IPC分类号： C23C16/46
摘要： PROBLEM TO BE SOLVED: To provide a thermal CVD (Chemical Vapor Deposition) system where, even in the case the size of a substrate is enlarged, the thickening of an infrared transmission window installed between a heating means and the substrate for maintaining its strength to the atmospheric pressure is prevented, and the increase of the cost can be suppressed.
SOLUTION: The inside of a vacuum chamber 2 is separated into a side at which a substrate 5 is installed by a quartz glass 3 as an infrared penetration window and a side at which a plurality of infrared lamps 8 for heating the substrate 5 are installed; during a film deposition process, a gaseous mixture of carbon monoxide and gaseous hydrogen as a gaseous starting material is introduced into the lower chamber 2a in the chamber on the side of the substrate 5; further, gaseous argon as inert gas is introduced into the upper chamber 2b in the chamber on the side of the infrared lamps 8; and also, sluice valves 15, 19 are opened, and control is performed in such a manner that the pressure of the lower chamber 2a in the chamber and the pressure of the upper chamber 2b in the chamber are made almost the same.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种热CVD（化学气相沉积）系统，其中即使在基板的尺寸扩大的情况下，安装在加热装置和基板之间的红外透射窗的增厚也将保持防止其对大气压力的强度，并且可以抑制成本的增加。解决方案：真空室2的内部被作为红外线穿透窗的石英玻璃3和用于加热基板5的多个红外灯8的一侧分离成基板5安装的一侧已安装; 在成膜过程中，作为气态原料的一氧化碳和气态氢的气体混合物被引入到在基板5一侧的室中的下室2a中; 此外，作为惰性气体的气态氩被引入红外灯8侧的室中的上室2b中; 并且，闸阀15,19打开，并且以这样的方式进行控制，使得室中的下室2a的压力和室中的上室2b的压力几乎相同。版权所有（C）2006，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式