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1. 发明专利

JP2011052274A Vacuum heating apparatus and substrate treatment system 审中-公开
标题翻译：真空加热装置和基板处理系统
公开(公告)号：JP2011052274A
公开(公告)日：2011-03-17
申请号：JP2009202009
申请日：2009-09-01
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAMOTO KAORU , HARA MASAMICHI
IPC分类号： C23C14/50 , H01L21/02 , H01L21/285 , H01L21/324 , H01L21/677 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a vacuum heating apparatus capable of performing highly uniform heating treatment to a substrate, and besides, obtaining high vacuum.
SOLUTION: The vacuum heating apparatus includes: an air-tight treatment container; a mounting stand made of aluminum alloy which is disposed for mounting the substrate in the treatment container; a cylindrical support member which supports the mounting stand and is made of stainless steel having a utility line member inserted from the air side thereinto; a seal member made of an organic material for making a space between the support member and the treatment container airtight; a heating part for heating the mounting stand; and an evacuating means for evacuating the interior of the treatment container. Thereby, the heat of the mounting stand comes to be hardly transferred to the seal member via the support member, a temperature rise of the seal member is suppressed and the penetration of a component of the air from the air side into the treatment container through the seal member is suppressed.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供能够对基板进行高度均匀的加热处理的真空加热装置，此外，获得高真空。真空加热装置包括：气密处理容器; 由铝合金制成的安装支架，用于将基板安装在处理容器中; 圆柱形支撑构件，其支撑安装支架，并且由不锈钢制成，具有从空气侧插入的公用线路构件; 由有机材料制成的用于在支撑构件和处理容器之间形成空间的密封构件; 用于加热安装台的加热部件; 以及用于抽空处理容器内部的排气装置。由此，安装架的热量几乎不能通过支撑构件传递到密封构件，因此密封构件的温度上升被抑制，并且空气的一部分从空气侧穿过处理容器通过密封件被压制。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2009293069A Film deposition method and treatment system 审中-公开
标题翻译：膜沉积法和处理系统
公开(公告)号：JP2009293069A
公开(公告)日：2009-12-17
申请号：JP2008146295
申请日：2008-06-03
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： GOMI JUN , MIZUSAWA YASUSHI , HATANO TATSUO , HARA MASAMICHI , YAMAMOTO KAORU
IPC分类号： C23C16/44 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a treatment system which not only can reduce running cost by improving the using efficiency of expensive raw material gas but also can improve productivity.
SOLUTION: The treatment system includes: a plurality of film deposition devices 4 to 10 where film deposition treatment of thin films in the same film kind is performed to the bodies W to be treated using raw material gas; a gas flow passage 58 connecting the gas inlets 4F to 10F and gas exhaust ports 4D to 10D of the treatment vessels 4A to 10A in the respective film deposition devices in series; a raw material gas feeding mechanism 38 provided at the gas flow passage connected to the gas inlet of the film deposition device located at the uppermost stream in the plurality of film deposition devices; and a vacuum pump 66 provided at the gas flow passage connected to the gas exhaust port of the film deposition device located at the lowermost stream in the plurality of film deposition devices. Thereby, the using efficiency of expensive raw material gas is improved, so as to reduce running cost.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种处理系统，其不仅可以通过提高昂贵的原料气体的使用效率来降低运行成本，而且可以提高生产率。解决方案：处理系统包括：多个成膜装置4至10，其中使用原料气体对待处理的物体W执行相同膜类型的薄膜的成膜处理; 连接各成膜装置中的处理容器4A〜10A的气体入口4F〜10F和排气口4D〜10D的气体流路58; 设置在与多个成膜装置中最上游的成膜装置的气体入口连接的气体流路的原料气体供给机构38; 以及设置在与多个成膜装置中位于最下游的成膜装置的排气口连接的气体流路的真空泵66。因此，提高了昂贵的原料气体的使用效率，从而降低运行成本。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2007162131A Apparatus for thermal and plasma enhanced vapor deposition and method of operating 有权
标题翻译：用于热和等离子体增强蒸气沉积的装置和操作方法
公开(公告)号：JP2007162131A
公开(公告)日：2007-06-28
申请号：JP2006311396
申请日：2006-11-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： RI KAZUNARI , ISHIZAKA TADAHIRO , YAMAMOTO KAORU , GOMI ATSUSHI , HARA MASAMICHI , FUJISATO TOSHIAKI , FAGUET JACQUES , MIZUSAWA YASUSHI
IPC分类号： C23C16/455 , H01L21/205 , H01L21/285 , H01L21/31 , H01L21/316 , H01L21/318
CPC分类号： C23C16/4585 , C23C16/12 , C23C16/14 , C23C16/16 , C23C16/18 , C23C16/303 , C23C16/32 , C23C16/34 , C23C16/36 , C23C16/402 , C23C16/403 , C23C16/405 , C23C16/45525 , C23C16/45536 , C23C16/45544 , C23C16/46 , C23C16/5096 , H01J37/32082 , H01J37/32495 , H01J2237/2001
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for thermal and plasma enhanced vapor deposition and a method of operating. SOLUTION: This invention relates to a method, computer readable medium, and system for vapor deposition on a substrate. The method includes disposing a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processing the substrate at either of a first position or a second position in the process space while maintaining vacuum isolation from the transfer space, and depositing a material on the substrate at either the first position or the second position. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于热和等离子体增强气相沉积的装置和操作方法。解决方案：本发明涉及一种用于气相沉积在基底上的方法，计算机可读介质和系统。该方法包括将衬底设置在与处理系统的传送空间真空隔离的处理系统的处理空间中，在处理空间中的第一位置或第二位置处处理衬底，同时保持与转移空间，以及在第一位置或第二位置处在基板上沉积材料。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2004206662A Apparatus and method for processing 有权
公开(公告)号：JP2004206662A
公开(公告)日：2004-07-22
申请号：JP2003086504
申请日：2003-03-26
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KASAI SHIGERU , ISHIBASHI MASAYUKI , YAMAMOTO KAORU , TANAKA KIYOSHI , YANAGIYA KENICHI
IPC分类号： C23C16/455 , C23C16/52 , G05D16/00 , G05D16/20
CPC分类号： G05D16/208
摘要： PROBLEM TO BE SOLVED: To provide a processing apparatus, which appropriately performs pressure control for each processing, even if a plurality types of processings, the processing pressure ranges of which different widely, are performed.
SOLUTION: The processing apparatus has a processing vessel 4 provided with a mounting board 8 to mount a processed object W, a gas inlet means 10 for introducing processing gas, and processing gas supply systems 14, 16 and 18 for supplying specified processing gas. In addition, the processing apparatus also has an inert gas supply system 12 for supplying the inert gas, an evacuation system 32 provided with a pressure control valve 36, the opening degree of which can be adjusted, and a vacuum pump 38, and a pressure gauge 48. When processing, in which partial pressure of processing gas is important, is performed, processing gas is made to flow by a specified amount and the opening degree of the pressure control valve is controlled, based on a detected value of the pressure gauge. When processing, in which the partial pressure of the processing gas is not comparatively important, the opening degree of the pressure control valve is fixed at a specified value, and the supplied amount of the inert gas is controlled, based on the detected value of the pressure gauge.
COPYRIGHT: (C)2004,JPO&NCIPI

5. 发明专利

JP2004047500A Plasma processing apparatus and method of initializing the same 有权
标题翻译：等离子体处理装置及其初始化方法
公开(公告)号：JP2004047500A
公开(公告)日：2004-02-12
申请号：JP2002156785
申请日：2002-05-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IKEDA TARO , IIZUKA YASHIRO , YAMAMOTO KAORU
IPC分类号： H05H1/46 , C23C16/44 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing device which is efficiently set up and is shifted to another process, and is capable of preventing generation of particles from occurring. SOLUTION: A semiconductor wafer mount 100 is equipped with a susceptor 153 of, for instance, AlN or the like and a dielectric member 180 formed of, for instance, SiO 2 or the like and is shaped so as to cover the entire susceptor 153. The dielectric member 180 is subjected to plasma processing for a certain time without mounting semiconductor wafer 1 so as to enable the plasma processing device to be efficiently set up, and shifted to another process, and to prevent generation of particles from occurring. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种有效地建立并转移到另一工艺的等离子体处理装置，并且能够防止发生颗粒的产生。解决方案：半导体晶片安装座100配备有例如AlN等的基座153和由例如SiO 2 SBB等形成的电介质部件180，并且是形成为覆盖整个基座153.电介质构件180经受一定时间的等离子体处理，而不安装半导体晶片1，以使得能够有效地建立等离子体处理装置，并转移到另一工艺，并且防止发生颗粒的产生。版权所有（C）2004，JPO

6. 发明专利

JP2009084686A Substrate-placing mechanism, apparatus for processing substrate, method for suppressing film deposition on substrate placing mechanism, and storage medium 审中-公开
标题翻译：基板放置机构，加工基板的装置，抑制基板放置机构的膜沉积的方法和储存介质
公开(公告)号：JP2009084686A
公开(公告)日：2009-04-23
申请号：JP2008216970
申请日：2008-08-26
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HARA MASAMICHI , GOMI ATSUSHI , MAEKAWA SHINJI , TAGA SATOSHI , YAMAMOTO KAORU
IPC分类号： C23C16/46 , H01L21/205
CPC分类号： H01L21/67103 , C23C16/4586 , C23C16/52 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a substrate-placing mechanism capable of suppressing film deposition. SOLUTION: The substrate-placing mechanism includes: a heater plate 21 which has a surface 21a on which a substrate W to be processed is placed and has a heating body 21b embedded therein for heating the substrate W to a film deposition temperature at which a film is deposited; and a temperature adjustment jacket 22 which is formed to cover at least a surface of the heater plate 21 other than the surface 21a thereof and which adjusts the temperature to be below the film deposition temperature. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够抑制膜沉积的基板放置机构。解决方案：基板放置机构包括：加热板21，其具有表面21a，待处理的基板W放置在该表面21a上，并且具有嵌入其中的加热体21b，用于将基板W加热到成膜温度一部电影是存放的; 以及温度调节护套22，其形成为覆盖加热板21的除了其表面21a以外的至少一个表面，并且将温度调节到低于成膜温度。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2009084625A Raw material gas supply system and film deposition apparatus 审中-公开
标题翻译：原料气供应系统和薄膜沉积装置
公开(公告)号：JP2009084625A
公开(公告)日：2009-04-23
申请号：JP2007255059
申请日：2007-09-28
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HARA MASAMICHI , GOMI JUN , MAEKAWA SHINJI , YAMAMOTO KAORU , TAGA SATOSHI
IPC分类号： C23C16/448 , H01L21/31
CPC分类号： C23C16/4481 , Y10T137/8158 , Y10T137/8376
摘要： PROBLEM TO BE SOLVED: To provide a raw material gas supply system capable of preventing occurrence of any low-temperature part in the middle of a flow passage of a raw material gas, and preventing re-liquefaction or re-solidification of the raw material gas. SOLUTION: The raw material gas supply system for supplying the raw material gas to a gas using system 2 under the reduced-pressure atmosphere comprises: a raw material tank 40 for storing a raw liquid material or a raw solid material; a raw material passage 46 with one end thereof being connected to the raw material tank and the other end thereof being connected to the gas using system; a carrier gas supply mechanism 54 for supplying the flow rate-controlled carrier gas into the raw material tank; on-off valves 48, 50 interposed in the middle of the raw material passage; a heating means 64 for heating the raw material passage and the on-off valves; and a temperature control unit 92 for controlling the heating means. The raw material passage and the on-off valves are respectively formed of a metallic material having excellent heat conductivity. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够防止在原料气体的流路中间发生任何低温部分的原料气体供给系统，并且防止再次液化或再凝固原料气。解决方案：用于在减压气氛下向气体使用系统2供应原料气体的原料气体供给系统包括：原料罐40，用于储存原料液体材料或原始固体材料; 原料通道46，其一端连接到原料罐，其另一端连接到气体使用系统; 用于将流量控制的载气供给到原料槽中的载气供给机构54; 插入在原料通道的中间的开关阀48,50; 用于加热原料通道和开关阀的加热装置64; 以及用于控制加热装置的温度控制单元92。原料通道和开闭阀分别由具有优异导热性的金属材料形成。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2014009392A Material container and its usage 有权
标题翻译：材料容器及其使用
公开(公告)号：JP2014009392A
公开(公告)日：2014-01-20
申请号：JP2012148352
申请日：2012-07-02
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAMOTO KAORU , MIZUSAWA YASUSHI , HARA MASAMICHI
IPC分类号： C23C16/448
摘要： PROBLEM TO BE SOLVED: To provide a material container to sublime material precursor efficiently upon supplying gas-phase material subliming from the material precursor to a process chamber where a thin film is formed on an article under processing.SOLUTION: Inside a housing 24 with an opening 30 connecting to a process chamber, trays 41 containing precursor 50 are stacked vertically by unit of plural steps. Each tray 41 includes an inlet (holes) to take carrier gas into the tray 41 and an outlet (gap 28) for the carrier gas to flow out with the gas-phase material of the precursor 50 and connecting to the opening 30, and is equipped with a cover 46 which can be opened and closed to keep the precursor 50 inside the tray 41.
摘要翻译：要解决的问题：提供一种材料容器，以便在将从材料前体升华的气相材料提供给处理室时，有效地将隆起的材料母体提供给处理室，在处理室内形成薄膜。解决方案：在具有连接到处理室的开口30，包含前体50的托盘41以多个步骤为单位堆叠。每个托盘41包括用于将载气引入托盘41的入口（孔）和用于载气的出口（间隙28）与前体50的气相材料一起流出并连接到开口30，并且是配备有可以打开和关闭以将前体50保持在托盘41内部的盖46。

9. 发明专利

JP2012201952A Substrate processing apparatus and recovery device 有权
标题翻译：基板加工装置和恢复装置
公开(公告)号：JP2012201952A
公开(公告)日：2012-10-22
申请号：JP2011069017
申请日：2011-03-26
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAMOTO KAORU , HARA MASAMICHI , GOMI ATSUSHI , HIRATA TOSHIHARU , TAGA SATOSHI
IPC分类号： C23C16/16 , H01L21/31
CPC分类号： C23C16/4412
摘要： PROBLEM TO BE SOLVED: To provide a recovery device capable of recovering an unreacted organoruthenium compound from a gas exhausted from a processing chamber with a simple structure, and preventing the recovered organoruthenium compound from sublimating and being exhausted in an idling time of the processing apparatus.SOLUTION: The recovery device 3 recovers the unreacted organoruthenium compound contained in a raw material gas discharged from the processing chamber for carrying out a substrate processing using the raw material gas containing a vaporized organoruthenium compound, and includes: a pass through unit 5 through which the discharged raw material gas discharged from the processing chamber passes; an inflow pipe 51 which flows the discharged raw material gas discharged from the processing chamber into the pass through unit; a discharge pipe 52 which discharges a gas left by recovering the organoruthenium compound from the raw material gas; a bypass pipe 61 which communicates between an upstream side and a downstream side of the pass through unit; a first valve which is provided in the inflow pipe; a second valve which is provided in a heating unit 7 for heating the inflow pipe and the discharge pipe; and a third valve which is provided in the bypass pipe.
摘要翻译：待解决的问题：提供一种回收装置，其能够以简单的结构从由处理室排出的气体中回收未反应的有机钌化合物，并且防止回收的有机钌化合物在空转时间内升华和耗尽处理装置。解决方案：回收装置3回收从处理室排出的原料气体中所含的未反应的有机钌化合物，用于使用含有蒸发的有机钌化合物的原料气体进行基板处理，并且包括：通过单元5 从处理室排出的排出的原料气体通过该通道; 将从处理室排出的排出的原料气体流入通过单元的流入管51; 排出管52，其通过从原料气中回收有机钌化合物而排出残留的气体; 旁通管61，其在通过单元的上游侧和下游侧连通; 设置在流入管中的第一阀; 第二阀，设置在用于加热流入管和排出管的加热单元7中; 以及设置在旁通管中的第三阀。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2010059542A Placing table structure, film formation system and film formation method 有权
标题翻译：配置表结构，膜形成系统和膜形成方法
公开(公告)号：JP2010059542A
公开(公告)日：2010-03-18
申请号：JP2009181146
申请日：2009-08-04
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： GOMI JUN , MIZUSAWA YASUSHI , HATANO TATSUO , HARA MASAMICHI , YAMAMOTO KAORU , TAGA SATOSHI
IPC分类号： C23C16/458 , C23C16/455 , H01L21/285
CPC分类号： C23C16/52 , C23C16/16 , C23C16/45514 , C23C16/45521 , C23C16/45597 , C23C16/4585 , H01L21/67017 , H01L21/68785
摘要： PROBLEM TO BE SOLVED: To provide a placing table structure where, when a thin film is formed using raw material gas which generates thermal decomposition reaction having reversibility, decomposition suppressing gas is supplied toward a peripheral section of the subject to be processed so as to suppress the thermal decomposition of raw material gas caused by thermal decomposition reaction having reversibility, thus the deposition of the thin film to the bevel part and back face of the subject to be processed can be prevented while highly maintaining the uniformity in the plane of film thickness.
SOLUTION: In the placing table structure 29 which is disposed in a processing container 4 and has a subject W to be processed thereon so as to form a thin film on the subject in the processing container 4 by using raw material gas which generates thermal decomposition reaction having reversibility, the placing table structure is provided with a placing table 32 for the purpose of placing the subject to be processed on a placing surface 43, i.e., an upper surface of the placing table structure, and a decomposition suppressing gas supply means 70 which is arranged in the placing table for the purpose of supplying decomposition suppressing gas, which suppresses thermal decomposition of the raw material gas caused by thermal decomposition reaction having reversibility, toward a peripheral section of the subject placed on the placing surface of the placing table. In this way, decomposition suppressing gas is supplied toward a peripheral of the subject to suppress thermal decomposition of the raw material gas caused by thermal decomposition reaction having reversibility.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种放置台结构，其中当使用产生具有可逆性的热分解反应的原料气体形成薄膜时，将分解抑制气体朝向待处理对象的周边部分供给，为了抑制由具有可逆性的热分解反应引起的原料气体的热分解，因此可以防止薄膜沉积到待处理对象的斜面部分和背面，同时高度保持在膜厚度。解决方案：在放置在处理容器4中并具有加工对象W的放置台结构29中，通过使用生成的原料气体在处理容器4中的被检体上形成薄膜热分解反应具有可逆性，放置台结构设置有放置台32，用于将被处理物放置在放置表面43，即放置台结构的上表面和分解抑制气体供应用于提供分解抑制气体的装置70，该分解抑制气体抑制由具有可逆性的热分解反应引起的原料气体的热分解朝向放置在放置的放置表面上的被摄体的周边部分表。以这种方式，向受试者的周边供应分解抑制气体，以抑制由热分解反应产生的原料气体的热分解具有可逆性。版权所有（C）2010，JPO＆INPIT

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