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1. 发明专利

JP2003318172A Film forming method, deducing method for film forming and processing time correction expression, film forming device, and program 审中-公开
标题翻译：薄膜成型方法，薄膜成型和加工时间校正表达，成膜装置和程序的滴定方法
公开(公告)号：JP2003318172A
公开(公告)日：2003-11-07
申请号：JP2002117672
申请日：2002-04-19
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUURA HIROYUKI , TAKAHASHI YUTAKA
IPC分类号： H01L21/31 , H01L21/00
CPC分类号： H01L21/67253
摘要： PROBLEM TO BE SOLVED: To provide a film forming method and a device, which are capable of restraining a film from varying in thickness with a variation in an atmospheric pressure. SOLUTION: A processing time correction expression for making up for a processing time corresponding to an atmospheric pressure is deduced on the basis of a first relational expression indicating a relation between the film thickness and a processing time and a second relational expression indicating a relation between the film thickness and the atmospheric pressure. The processing time is corrected on the basis of the deduced processing time correction expression and the measured atmospheric pressure, and the film is formed on the basis of the corrected processing time. The processing time is corrected corresponding to the atmospheric pressure on the basis of the processing time correction expression, so that the film can be restrained from varying in thickness with a variation in the atmospheric pressure. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种成膜方法和装置，其能够在大气压力的变化下抑制膜的厚度变化。解决方案：基于指示膜厚度和处理时间之间的关系的第一关系式和与第二关系表达式对应的第二关系表达式，推导出用于补偿对应于大气压的处理时间的处理时间校正表达式膜厚与大气压之间的关系。基于推导的处理时间校正表达式和测量的大气压力来校正处理时间，并且基于经校正的处理时间形成胶片。基于处理时间校正表达式，对应于大气压力校正处理时间，从而可以随着大气压力的变化来抑制膜的厚度变化。版权所有（C）2004，JPO

2. 发明专利

JP2006173236A Method and device for forming silicon acid nitride film, and program 有权
标题翻译：用于形成硅酸钠膜的方法和装置，以及程序
公开(公告)号：JP2006173236A
公开(公告)日：2006-06-29
申请号：JP2004361108
申请日：2004-12-14
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TOMITA MASAHIKO , SHIBATA TETSUYA , TAKAHASHI YUTAKA , UMEZAWA KOUTAI
IPC分类号： H01L21/31 , H01L21/318
CPC分类号： H01L21/3144
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for forming a silicon acid nitride film, and a program by which a silicon acid nitride film with a desired nitrogen concentration can be continuously and stably formed.
SOLUTION: Ammonia is activated by being applied into a reaction tube 2 heated at least to 600 °C. The surface of a material in the reaction tube 2 is nitrided until it is almost saturated by the activated ammonia. Continuously, a silicon oxide film is formed at a semiconductor wafer W. The silicon acid nitride film is formed by nitriding the formed silicon oxide film.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种形成硅酸氮化物膜的方法和装置，以及可以连续稳定地形成具有所需氮浓度的硅酸氮化物膜的程序。解决方案：氨被施加到加热至少至600℃的反应管2中而被活化。将反应管2中的材料的表面氮化，直到其几乎被活性氨饱和。连续地在半导体晶片W上形成氧化硅膜。通过氮化所形成的氧化硅膜形成硅酸氮化物膜。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005294457A Film forming method and film forming device 有权
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：JP2005294457A
公开(公告)日：2005-10-20
申请号：JP2004106048
申请日：2004-03-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TAKAHASHI YUTAKA , TAKAGI SATOSHI , TOMITA MASAHIKO
IPC分类号： C23C16/24 , C23C16/455 , C23C16/56 , H01L21/20 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/324 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： C23C16/24 , C23C16/45557 , C23C16/56 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02667 , H01L21/28035 , H01L21/324 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To form a polysilicon film containing an aggregate of a spherical crystal so as to preclude a conductive impurity element from thrusting through to the thickness direction of the polysilicon film, when, for example, the polysilicon film used as a gate electrode on a gate insulating film is formed in the case that the conductive impurity element is added to the polysilicon film in a subsequent process.
SOLUTION: A processing body is heated up to 580°C, for example, to form an amorphous film, and next, the processing body is heated up to 620°C, for example, whereby the amorphous silicon film is polymerized to form the polysilicon film. Such the polysilicon film is composed of the aggregate of the spherical crystal or a mixture of a weight-like crystal and the spherical crystal, and the grain boundary of a fine crystal particle is directed to various directions. Therefore, when the impurity element is added to the relevant polysilicon film in a subsequent process, the conductive impurity element is trapped in the grain boundary, thereby precluding the impurity element from thrusting through to the thickness direction of the polysilicon film.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了形成含有球状晶体的聚集体的多晶硅膜，以防止导电杂质元素向多晶硅膜的厚度方向推移，例如，当将多晶硅膜用作在导电杂质元素在随后的工序中添加到多晶硅膜的情况下，形成栅极绝缘膜上的栅电极。解决方案：例如，将加工体加热至580℃以形成非晶膜，接下来，将加工体加热至例如620℃，由此使非晶硅膜聚合成形成多晶硅膜。这样的多晶硅膜由球状晶体的集合体或重量结晶与球状晶体的混合物组成，微细晶粒的晶界指向各个方向。因此，当在随后的工艺中将杂质元素添加到相关的多晶硅膜时，导电杂质元素被捕获在晶界中，从而阻止杂质元素向多晶硅膜的厚度方向的推移。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005093677A Film forming method and heat treatment equipment 有权
标题翻译：电影成型方法和热处理设备
公开(公告)号：JP2005093677A
公开(公告)日：2005-04-07
申请号：JP2003324470
申请日：2003-09-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HASEBE KAZUHIDE , TAKAHASHI YUTAKA , UMEZAWA KOUTAI , TAKAGI SATOSHI
IPC分类号： C23C16/34 , C23C16/455 , H01L21/205 , H01L21/314 , H01L21/318 , H01L21/324 , H01L21/336
CPC分类号： C23C16/345 , C23C16/45531 , C23C16/45546 , H01L21/3141 , H01L21/3185
摘要： PROBLEM TO BE SOLVED: To provide a film forming method capable of forming an insulating layer capable of preventing the penetration of impurities.
SOLUTION: In the method for forming films on a plurality of bodies to be treated W in which base films composed of SiO
2 films or SiON films are formed on surfaces, the insides of treating vessels, in which a plurality of the bodies to be treated are housed at multistages at specified intervals, are supplied alternately at a plurality of times with either one raw material gas selected from a group composed of dichlorosilane, hexachlorodisilane and tetrachlorosilane and ammonia gas. In the method, a thin silicon nitride film is formed so as to be laminated on a base film at a low process temperature. Accordingly, the film quality of the laminated silicon nitride film is improved, and the penetration of impurities is inhibited largely.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够形成能够防止杂质渗透的绝缘层的成膜方法。解决方案：在表面上形成由多个待处理物体W形成薄膜的方法中，其中形成由SiO 2 或SiON膜构成的基底膜，其中多个待处理物体以规定间隔的多段容纳在一起，与选自二氯硅烷，六氯乙硅烷和四氯硅烷的一种原料气体和氨气一起交替地供给多次。在该方法中，形成薄氮化硅膜，以便在低温度下层压在基膜上。因此，层叠氮化硅膜的膜质量提高，并且杂质的渗透受到很大的抑制。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2005175441A Method of oxidizing workpiece and oxidizing device 有权
标题翻译：氧化工艺和氧化装置的方法
公开(公告)号：JP2005175441A
公开(公告)日：2005-06-30
申请号：JP2004307295
申请日：2004-10-21
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HASEBE KAZUHIDE , UMEZAWA KOUTAI , TAKAHASHI YUTAKA
IPC分类号： H01L21/31 , H01L21/00 , H01L21/316
CPC分类号： H01L21/31662 , H01L21/02238 , H01L21/02255 , H01L21/67017 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a method of oxidizing workpieces capable of improving the wafer to wafer uniformity of the film thickness of an oxide film that is formed.
SOLUTION: In a workpiece oxidizing method for oxidizing the surface of the workpiece in an atmosphere having an active oxygen species and an active hydroxyl species generated by supplying an oxidizing gas and a reducing gas into a treating container 22 storing a plurality of workpieces W that are arranged in a predetermined pitch and permitting evacuation, so as to react both of the gases, at least either one gas of the oxidizing gas and the reducing gas is jetted and supplied to at least the upstream area S1, the downstream area S3, and the midstream area S2 of the gas flow flowing through the storage region S storing the workpieces.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够将晶片氧化的工件氧化成所形成的氧化膜的膜厚度的均匀性的方法。解决方案：在通过将氧化剂气体和还原气体供给到存储有多个工件的处理容器22中产生的活性氧和活性羟基的气氛中对工件的表面进行氧化的工件氧化方法中， W，以预定间距排列并允许抽真空，以使两种气体反应，将至少一种氧化性气体和还原性气体的气体喷射并供给到至少上游区域S1，下游区域S3 以及流过存储工件的存储区域S的气流的中游区域S2。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2002334867A HEAT TREATMENT EQUIPMENT AND METHOD THEREFOR 失效
公开(公告)号：JP2002334867A
公开(公告)日：2002-11-22
申请号：JP2001138831
申请日：2001-05-09
申请人： TOKYO ELECTRON LTD
发明人： ISHII KATSUTOSHI , TAKAHASHI YUTAKA , HASEGAWA AKINARI
IPC分类号： H01L21/31 , C23C16/44 , C30B33/02 , H01L21/00
摘要： PROBLEM TO BE SOLVED: To realize low temperature process by improving the uniformity of film thickness when a semiconductor wafer is to be subjected to oxidation treatment using batch furnace. SOLUTION: In equipment where hydrogen gas and oxygen gas are burned by using an external burning device arranged outside the batch furnace and introduced as mixture gas of oxygen gas and water vapor into a reaction tube, and the so-called 'wet oxidation' is conducted, and a heating device is installed outside the batch furnace. The heating device has constitution, where a ventilation resistor is arranged in a flow channel for heating the gas, treatment gas with which treatment other than wet oxidation is conducted is made to flow in the ventilation resistor, and heating is performed by a heating means. For example, when dry oxidation is to be conducted, oxygen gas and hydrogen chloride gas are activated in the heating device, a very small amount of water vapor is previously generated, and dry oxidation is performed. When a silicon oxidation film containing nitrogen is to be formed by using dinitrogen monoxide gas, the gas is made to flow in the heating device, and activation is previously performed.

7. 发明专利

JP2001338923A METHOD FOR FORMING OXYNITRIDE FILM AND APPARATUS FOR FORMING OXYNITRIDE FILM 失效
公开(公告)号：JP2001338923A
公开(公告)日：2001-12-07
申请号：JP2000157879
申请日：2000-05-29
申请人： TOKYO ELECTRON LTD
发明人： TAKAHASHI YUTAKA , KATO HISASHI , ISHII KATSUTOSHI , MIURA KAZUTOSHI
IPC分类号： H01L21/31 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a method for forming an oxynitride film and an apparatus for forming the oxynitride film that can make the oxynitride film including a desired quantity of nitrogen a thin film. SOLUTION: Thermal treatment apparatus 1 comprises a reaction chamber 2 for forming a silicon oxynitride film on a semiconductor wafer 10 and a gas introduction pipe 13 connected to the reaction chamber 2. The gas introduction pipe 13 is provided with a heater 15 for heating a process gas. Then the process gas is heated to 1,000 deg.C by the heater 15, and the heated process gas is fed into the reaction chamber 2 via the gas introduction pipe 13, and the temperature of the reaction chamber is set at 800 deg.C.

8. 发明专利

JPH11135448A VERTICAL TREATMENT DEVICE 失效
公开(公告)号：JPH11135448A
公开(公告)日：1999-05-21
申请号：JP31121397
申请日：1997-10-28
申请人： TOKYO ELECTRON LTD
发明人： GO SHIYOUKOU , ISHII KATSUTOSHI , NISHIMURA TOSHIHARU , TAKAHASHI YUTAKA
IPC分类号： H01L21/22 , C23C16/44 , C23C16/455 , C23C16/54 , C30B25/14 , H01L21/00 , H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a vertical treatment device which can surely prevent an atmosphere in a treatment chamber from leaking outside. SOLUTION: A vertical treatment device provided with a cylindrical treatment chamber 2 having an opening 18 at the bottom, a discoidal cap 6 which is made of quartz and is moved up and down to hermetically close the opening 18, and a holding boat placed on the cap 6 and holding a substance W to be treated stepwise, is provided with an inert gas supply header 16 shaped like a ring along the periphery of the joint part of the bottom end of the treatment chamber 2, and the cap 6 and an inert gas jet port 36 for making the inert gas supply header 16 communicate with the treatment chamber 2. This prevents the atmosphere in the treatment chamber from leaking outside.

9. 发明专利

JP2002035706A WASHING METHOD AND WASHING APPARATUS FOR OBJECT TO BE TREATED 失效
公开(公告)号：JP2002035706A
公开(公告)日：2002-02-05
申请号：JP2000223233
申请日：2000-07-25
申请人： TOKYO ELECTRON LTD
发明人： TAKAHASHI YUTAKA , KATO HISASHI
IPC分类号： B08B5/00 , C23C16/02 , H01L21/205 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a washing method and a washing apparatus for an object to be treated by which the removal efficiency of pollutant substances adhering to the object to be treated is improved. SOLUTION: A cleaning gas introduction pipe 13 is inserted into a lower part of a reaction tube 2 of a heat treatment apparatus 1. A heater 15 is installed in the middle of the cleaning gas introduction pipe 13. The heater 15 is heated to a temperature at which a cleaning gas supplied to the heater 15 can be activated. The cleaning gas passed through the heater 15 and heated is supplied to the reaction tube 2. A heater 12 for increasing the temperature is installed in the surrounding of the reaction tube 2. The heater 12 for increasing the temperature heats the inside of the reaction tube 2 to a temperature at which the cleaning gas is kept in the activated state.

10. 发明专利

JP2001345321A OXIDATION TREATMENT METHOD AND DEVICE 失效
公开(公告)号：JP2001345321A
公开(公告)日：2001-12-14
申请号：JP2000162950
申请日：2000-05-31
申请人： TOKYO ELECTRON LTD
发明人： TAKAHASHI YUTAKA , KATO HISASHI , ISHII KATSUTOSHI , MIURA KAZUTOSHI
IPC分类号： H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To solve the problem that the uniformity in film thickness becomes poor when a treatment temperature is reduced in the so called dry oxidation method for obtaining a silicon oxide film, by supplying oxygen and hydrogen chloride gases into the reaction tube of, for example, a vertical heat-treating device and oxidizing the silicon layer of a semiconductor wafer. SOLUTION: A heater part is provided in the middle of the gas supply tube outside the vertical heat-treating device, thus heating the mixed gas of the hydrogen and hydrogen chloride gases before supplying into the reaction tube. For example, when the treatment temperature of the reaction tube is equal to 800 deg.C, the mixed gas is heated to approximately 1,000 deg.C, thus generating a small amount of moisture by allowing both gases to react each other. Although the moisture increases the film of the silicon oxide film, the change in the amount of generation of moisture depending on a position in a surface can be avoided when flowing from the peripheral of the wafer to a center, and the uniformity in the surface of the film thickness can be improved by generating moisture, for example, in nearly balanced state in advance.

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