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1. 发明专利

JP2014160790A Substrate processing apparatus and mounting table 有权
标题翻译：基板加工装置和安装表
公开(公告)号：JP2014160790A
公开(公告)日：2014-09-04
申请号：JP2013048172
申请日：2013-03-11
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TAGA SATOSHI , KOBAYASHI YOSHIYUKI
IPC分类号： H01L21/683 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To improve temperature response of a mounting table.SOLUTION: A substrate processing apparatus comprises: a chamber; a mounting table arranged in the chamber, for mounting a substrate; a high-frequency power source for applying high-frequency power; and a gas supply source for supplying an intended gas to inside the chamber. The mounting table includes: a first ceramic base material in which flow channels for flowing a cooling medium are formed; a first conductive layer formed on a principal surface and lateral faces of the first ceramic base material on the side where a substrate is mounted; and an electrostatic chuck stacked on the first conductive layer, for electrostatically adsorbing a mounted substrate. A volume of the flow channels is equal to or more than a volume of the ceramic base material. Plasma is generated from the intended gas by the high-frequency power applied to the first conductive layer and a plasma treatment by the plasma is performed on the mounted substrate.
摘要翻译：要解决的问题：提高安装台的温度响应。解决方案：基板处理装置包括：室; 安装在所述室中的安装台，用于安装基板; 用于施加高频电源的高频电源; 以及用于将预期气体供应到室内的气体供应源。安装台包括：形成用于流动冷却介质的流动通道的第一陶瓷基体材料; 第一导电层，形成在第一陶瓷基材的主表面和侧面上，所述第一陶瓷基材安装在基板的一侧; 以及堆叠在第一导电层上的静电吸盘，用于静电吸附安装的基板。流路的体积等于或大于陶瓷基材的体积。通过施加到第一导电层的高频功率从预期气体产生等离子体，并且在所安装的基板上进行等离子体的等离子体处理。

2. 发明专利

JP2014123663A Apparatus and method of manufacturing electrode for lithium ion capacitor 有权
标题翻译：锂离子电容器电极的制造方法及其制造方法
公开(公告)号：JP2014123663A
公开(公告)日：2014-07-03
申请号：JP2012279685
申请日：2012-12-21
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOBAYASHI YOSHIYUKI , TAGA SATOSHI
IPC分类号： H01G13/00 , H01G11/22 , H01M4/1393
CPC分类号： C23C4/08 , C23C4/12 , C23C4/137 , H01G11/06 , H01G11/32 , H01G11/50 , H01G11/86 , H01M4/0419 , H01M4/139 , H01M4/587 , H01M10/0525 , Y02E60/122 , Y02E60/13 , Y02P70/54
摘要： PROBLEM TO BE SOLVED: To shorten the time required for doping lithium ions into an electrode material on an electrode sheet.SOLUTION: An apparatus of manufacturing the electrode for a lithium ion capacitor includes a processing chamber 200 for which an electrode sheet can be carried in and out, a rare gas supply section 230 for introducing rare gas into the processing chamber, an exhaust device 220 for evacuating the processing chamber to bring about a predetermined vacuum pressure, and a lithium spray unit 210 for doping lithium ions, by spraying lithium-containing powder while fusing, thereby depositing a thin film of lithium on a carbon material C of an electrode sheet W carried into the processing chamber.
摘要翻译：要解决的问题：缩短将锂离子掺杂到电极片上的电极材料中所需的时间。解决方案：制造锂离子电容器用电极的装置包括处理室200，电极片可以承载在该处理室200中并且将用于将稀有气体引入处理室的稀有气体供给部230，用于抽出处理室以实现预定真空压力的排气装置220以及用于掺杂锂离子的锂喷射单元210，同时熔化，从而在携带到处理室中的电极片W的碳材料C上沉积锂薄膜。

3. 发明专利

JP2014090174A Method for cleaning exhaust system 有权
标题翻译：清洁排气系统的方法
公开(公告)号：JP2014090174A
公开(公告)日：2014-05-15
申请号：JP2013233490
申请日：2013-11-11
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MORIYA TAKESHI , MURAKAMI TAKAHIRO , KOBAYASHI YOSHIYUKI , SATO TETSUHARU , SUGAWARA EIICHI , ENDO SHOSUKE , FUJIMORI MASAKI
IPC分类号： H01L21/02 , F04D19/04 , H01L21/3065
CPC分类号： F04D19/042 , F04D29/701
摘要： PROBLEM TO BE SOLVED: To provide a reflecting device which can prevent intrusion of bounced particles into a processing chamber.SOLUTION: A reflecting device 36 comprises a reflector 38 consisting of a first discoid reflecting surface member 41 disposed in an exhaust manifold 16 oppositely to a TMP 18, and a second annular reflecting surface member 42 disposed on a periphery of the first reflecting surface member 41 and having a plane angle set to direct a rotating shaft 43 of the TMP 18.
摘要翻译：要解决的问题：提供一种能够防止反弹颗粒入侵处理室的反射装置。解决方案：反射装置36包括反射器38，反射器38由设置在排气歧管16中的第一盘状反射面构件41构成，第一盘状反射面构件41与 TMP18，以及设置在第一反射面构件41的周围并且具有设置成引导TMP18的旋转轴43的平面角的第二环形反射面构件42。

4. 发明专利

JP2013042012A Semiconductor manufacturing apparatus and processing method 有权
标题翻译：半导体制造设备和处理方法
公开(公告)号：JP2013042012A
公开(公告)日：2013-02-28
申请号：JP2011178494
申请日：2011-08-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIMORI SHINJI , KOBAYASHI YOSHIYUKI , KATO TAKEHIRO , ITO ETSUJI
IPC分类号： H01L21/683 , H01L21/3065
CPC分类号： H01L21/68742 , H01L21/30604 , H01L21/67063
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which can move a processing target substrate and a focus ring up and down with less number of pins.SOLUTION: A semiconductor manufacturing apparatus of an embodiment comprises a stage ST, a plurality of pins 70 and a driving part. The stage includes a placement face PF. The placement face includes a first region R1 on which a processing target substrate W is placed and a second region R2 on which a focus ring 18 is placed. The second region is provided so as to surround the first region. A plurality of holes 14h are formed in the stage. The plurality of holes pass a boundary between the first region and the second region and extend in a direction crossing the placement face. The plurality of pins are provided in the plurality of holes, respectively. Each of the plurality of pins has a first upper end face 70a and a second upper end face 70b. The second upper end face is provided upper than the first upper end face and deviates more to the first region side than the first upper end face.
摘要翻译：要解决的问题：提供一种半导体制造装置，其能够以较少数量的引脚上下移动处理目标基板和聚焦环。解决方案：实施例的半导体制造装置包括台ST，多个销70和驱动部。舞台包括放置面PF。放置面包括其上放置有处理对象基板W的第一区域R1和配置有聚焦环18的第二区域R2。第二区域设置成围绕第一区域。在台阶上形成多个孔14h。多个孔通过第一区域和第二区域之间的边界并且在与放置面交叉的方向上延伸。多个销分别设置在多个孔中。多个销中的每一个具有第一上端面70a和第二上端面70b。第二上端面设置在第一上端面的上方，比第一上端面偏离第一区域侧。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2013015145A Exhaust pump and exhaust system 有权
标题翻译：排气泵和排气系统
公开(公告)号：JP2013015145A
公开(公告)日：2013-01-24
申请号：JP2012212772
申请日：2012-09-26
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MORIYA TAKESHI , MURAKAMI TAKAHIRO , KOBAYASHI YOSHIYUKI , SATO TETSUHARU , SUGAWARA EIICHI , ENDO SHOSUKE , FUJIMORI MASAKI
IPC分类号： F04D19/04 , F04B37/16 , H01L21/02
CPC分类号： F04D19/042 , F04D29/701
摘要： PROBLEM TO BE SOLVED: To provide a reflector that prevents recoiled particles from entering a treatment chamber.SOLUTION: The reflector 36 includes a reflection plate 38 including: a disc-shaped first reflecting surface member 41 arranged inside an exhaust manifold 16 and arranged to face a turbo molecular pump (TMP) 18; and a toric second reflecting surface member 42 arranged on a peripheral edge of the first reflecting surface member 41 and of which a surface angle is set to point to a rotary shaft 43 of the TMP 18.
摘要翻译：要解决的问题：提供防止反冲颗粒进入处理室的反射器。反射器36包括反射板38，反射板38包括：设置在排气歧管16内部并且布置成面对涡轮分子泵（TMP）18的圆盘状的第一反射面部件41; 以及设置在第一反射面构件41的周缘上并且其表面角度被设定为指向TMP18的旋转轴43的复曲面第二反射面构件42.权利要求（C）2013， JPO和INPIT

6. 发明专利

JP2011181677A Focus ring and substrate mounting system 审中-公开
标题翻译：聚焦环和基板安装系统
公开(公告)号：JP2011181677A
公开(公告)日：2011-09-15
申请号：JP2010044345
申请日：2010-03-01
申请人： Denki Kagaku Kogyo Kk , Tokyo Electron Ltd , 東京エレクトロン株式会社 , 電気化学工業株式会社
发明人： KITAJIMA TSUGIO , KOBAYASHI YOSHIYUKI , WATANABE ATSUSHI , OKADA TAKUYA
IPC分类号： H01L21/3065
CPC分类号： H01L21/67103 , H01J37/32091 , H01J37/32165 , H01J37/32642 , H01L21/67248 , H01L21/68735
摘要： PROBLEM TO BE SOLVED: To provide a focus ring having a heat conductive sheet having a film thickness suitable to plasma processing. SOLUTION: In a plasma processing apparatus, the focus ring 25 is equipped with: a susceptor contact surface 40 which surrounds an outer periphery of a wafer W mounted on a susceptor 12 having a refrigerant chamber and coming in contact with the susceptor 12; and a heat conductive sheet 38 formed on the susceptor contact surface 40. The heat conductive sheet 38 has a heat conductivity of 0.5 to 5.0 W/m k, and includes a heat-resisting adhesive and rubber including silicon as a component, and a ceramic filler of oxide, nitride or carbide mixed with the adhesive and rubber by 25 to 60% by volume in the adhesive and rubber. The film thickness of the heat conductive sheet 38 is 40 to 100 μm. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有适于等离子体处理的膜厚的导热片的聚焦环。解决方案：在等离子体处理装置中，聚焦环25配备有：基座接触表面40，其围绕安装在具有制冷剂室并与基座12接触的基座12上的晶片W的外周围 ; 以及形成在基座接触表面40上的导热片38.导热片38具有0.5至5.0W / mk的导热率，并且包括耐热粘合剂和包括硅作为组分的橡胶和陶瓷填料的氧化物，氮化物或碳化物与粘合剂和橡胶混合25〜60体积％的粘合剂和橡胶。导热片38的膜厚为40〜100μm。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2008153315A Method for manufacturing substrate setting board 有权
标题翻译：制造基板设置板的方法
公开(公告)号：JP2008153315A
公开(公告)日：2008-07-03
申请号：JP2006337684
申请日：2006-12-15
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NAGAYAMA MASAYUKI , UEDA TAKEHIRO , KOBAYASHI YOSHIYUKI , OHASHI KAORU
IPC分类号： H01L21/3065 , C23C14/50 , C23C16/458 , H01L21/205 , H01L21/683
CPC分类号： H01L21/68757
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a substrate setting board for preventing leaving of residues of spraying materials within a fluid route, generation of contamination due to the residues of the spraying materials and also generation of clogged fluid route. SOLUTION: A removable film 540 is formed to a gas supply route such as the internal surface of a gas discharging hole 511 and an internal surface of a groove 512. Next, while a gas such as the compressed air is injected from each gas discharging hole 511 by supplying the gas like the compressed air, a ceramic spraying film 10, a metal spraying film (electrode) 12, and a ceramic spraying film 10 are sequentially laminated on the setting board surface to form a three-layer electrostatic chuck 11. Next, fluid, for example, organic solvent such as acetone or the like, compressed air, water or the like is introduced into the groove 512 to remove and wash the film 540. Accordingly, solid spraying ceramic 530 adhered in the ceramic spraying step can be removed. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造用于防止喷射材料残留物留在流体路径内的基板固定板的方法，由于喷涂材料的残留物产生污染以及产生堵塞的流体路线。解决方案：可移除膜540形成为气体供给路径，例如气体排出孔511的内表面和槽512的内表面。接下来，当从每个气体注入诸如压缩空气的气体时通过供给像压缩空气这样的气体的气体排出孔511，陶瓷喷涂膜10，金属喷涂膜（电极）12和陶瓷喷涂膜10依次层叠在固化板表面上以形成三层静电卡盘接下来，将流体，例如丙酮等有机溶剂，压缩空气，水等引入凹槽512中以除去和洗涤膜540.因此，固体喷涂陶瓷530粘附在陶瓷喷涂中步骤可以删除。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007273620A Substrate conveyor and substrate processing apparatus 审中-公开
标题翻译：底板输送机和底板加工设备
公开(公告)号：JP2007273620A
公开(公告)日：2007-10-18
申请号：JP2006095634
申请日：2006-03-30
申请人： Tokyo Electron Ltd , Toshiba Corp , 東京エレクトロン株式会社 , 株式会社東芝
发明人： KOBAYASHI YOSHIYUKI , SAKAI ITSUKO , OIWA NORIHISA
IPC分类号： H01L21/677
CPC分类号： H01L21/67748 , H01L21/6831 , H01L21/6875
摘要： PROBLEM TO BE SOLVED: To provide a substrate conveyor capable of inhibiting the generation of particles. SOLUTION: A substrate processing apparatus 1 has a treating chamber 12 housing a wafer W, a conveying arm 17 conveying the wafer W to the treating chamber 12 and a susceptor 45 being arranged in the processing chamber 12 and placing the conveyed wafer W. An electrostatic chuck 55 with a plurality of protrusions 55a is arranged to the upper section of the susceptor 45, and a conveying fork 25 with a plurality of the protrusions 25a holding the wafer W is disposed at the front end section of the conveying arm 17. The protrusions 25a are disposed on the conveying fork 25 so that the place 81 of the wafer W held by the protrusions 25a of the conveying fork 25 differs from that 80 of the wafer W held by the protrusions 55a of the electrostatic chuck 55. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够抑制颗粒产生的基板输送机。解决方案：基板处理装置1具有容纳晶片W的处理室12，将晶片W输送到处理室12的输送臂17和布置在处理室12中的基座45，并将输送的晶片W 具有多个突起55a的静电卡盘55设置在基座45的上部，并且具有保持晶片W的多个突起25a的输送叉25设置在输送臂17的前端部突起25a设置在输送叉25上，使得由输送叉25的突起25a保持的晶片W的位置81与由静电卡盘55的突起55a保持的晶片W的80不同。 P>版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2007251091A Method and device for plasma treatment 有权
标题翻译：用于等离子体处理的方法和装置
公开(公告)号：JP2007251091A
公开(公告)日：2007-09-27
申请号：JP2006076195
申请日：2006-03-20
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOBAYASHI YOSHIYUKI
IPC分类号： H01L21/3065 , C04B41/85 , H05H1/46
CPC分类号： C23C4/18 , C23C4/02 , C23C4/11 , C23C26/00 , C23C28/042 , H01J37/32495
摘要： PROBLEM TO BE SOLVED: To improve the durability of a portion, a member and a component exposed to plasma atmosphere inside a chamber used for plasma etching processing in corrosive gas atmosphere, to improve anti-plasma erosion property of a film formed in the surface of a member or the like in the corrosive gas atmosphere and to provide a plasma treatment device which can prevent the generation of particle of a corrosion product even under high plasma output and a plasma treatment method using it. SOLUTION: In a plasma treatment device for treating the surface of a workpiece housed inside a chamber by etching treatment gas plasma, surfaces of a portion of the chamber which is exposed to plasma generation atmosphere, a member disposed inside the chamber or a component are coated at least with a porous layer consisting of metal oxide and a secondary recrystalline layer of the metal oxide formed on the porous layer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题为了提高在腐蚀性气体气氛中用于等离子体蚀刻处理的室内暴露于等离子体气氛的部分，部件和部件的耐久性，以提高形成在膜中的膜的抗等离子体侵蚀性在腐蚀性气体气氛中的构件等的表面，并且提供即使在高等离子体输出下也能够防止腐蚀产物的颗粒产生的等离子体处理装置和使用它的等离子体处理方法。解决方案：在通过蚀刻处理气体等离子体处理容纳在室内的工件的表面的等离子体处理装置中，暴露于等离子体产生气氛的室的一部分的表面，设置在室内的部件或至少在多孔层上形成由金属氧化物构成的多孔层和在多孔层上形成的金属氧化物的次级重结晶层。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2007247042A Ceramic covered member for semi-conductor machining apparatus 有权
标题翻译：半导体加工设备的陶瓷覆盖件
公开(公告)号：JP2007247042A
公开(公告)日：2007-09-27
申请号：JP2006076196
申请日：2006-03-20
申请人： Tocalo Co Ltd , Tokyo Electron Ltd , トーカロ株式会社 , 東京エレクトロン株式会社
发明人： KOBAYASHI YOSHIYUKI , MURAKAMI TAKAHIRO , HARADA YOSHIO , TAKEUCHI JUNICHI , YAMAZAKI MAKOTO , KOBAYASHI KEIGO
IPC分类号： C23C28/00 , B08B7/00 , C23C4/04 , C23C4/10 , C23C26/00 , H01L21/304 , H01L21/3065
CPC分类号： C23C28/042 , C23C4/02 , C23C4/11 , C23C4/18 , C23C26/00
摘要： PROBLEM TO BE SOLVED: To enhance durability of a member arranged in a container such as a semi-conductor machining apparatus in which plasma etching is performed under a severe corrosive environment. SOLUTION: A ceramic-covered member has a porous layer composed of a spray deposit film of IIIa group oxide in the periodic table on the surface of a metallic or non-metallic base material directly or via an undercoat layer. A secondary recrystallization layer formed through irradiation of the high energy of electron beams, laser beams or the like is deposited on the porous layer. COPYRIGHT: (C)2007,JPO&INPIT

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