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    • 1. 发明专利
    • Plasma processing device and plasma processing method
    • 等离子体处理装置和等离子体处理方法
    • JP2013140950A
    • 2013-07-18
    • JP2012259114
    • 2012-11-27
    • Tokyo Electron Ltd東京エレクトロン株式会社Tocalo Co Ltdトーカロ株式会社
    • NISHINO MASAMAKABE MASATSUGUNAGAYAMA MASAYUKIHANDA TATSUYAMIDORIKAWA RYOTAROKOBAYASHI KEIGONIYA TETSUYA
    • H01L21/3065C23C16/509H05H1/46
    • H05H1/46H01J37/32477H01J37/32495
    • PROBLEM TO BE SOLVED: To suppress microparticle occurrence in a plasma process which introduces a gas including a halogen-containing gas and an oxygen gas.SOLUTION: There is provided a plasma processing device 10 comprising: a processing container 12 which can be decompressed; a lower electrode provided in the processing container and functioning as a mounting table 20 on which a wafer W is mounted; an upper electrode or an antenna electrode arranged so as to face the lower electrode; a gas supply source 32 which introduces a gas including a halogen-containing gas and an oxygen gas into the processing container; a high-frequency power source 18 which applies high-frequency power for plasma generation to any of the upper electrode, antenna electrode, and lower electrode; and means for turning the gas into plasma by the high-frequency power for plasma generation and plasma-treating the wafer on the mounting table by the action of plasma. In this plasma processing device, out of surfaces exposed to plasma in the processing container, a part or the whole of a surface which is of equal height of at least the upper electrode side, antenna electrode side, or lower electrode side from the wafer mounting position is covered by a fluoride compound.
    • 要解决的问题:为了抑制引入包含含卤素气体和氧气的气体的等离子体处理中的微粒发生。解决方案:提供一种等离子体处理装置10,其包括:可以减压的处理容器12; 设置在处理容器中并用作安装有晶片W的安装台20的下电极; 以与所述下电极相对的方式配置的上电极或天线电极; 将含有含卤素气体和氧气的气体引入处理容器内的气体供给源32; 高电源18,其向上电极,天线电极和下电极中的任一个施加用于等离子体产生的高频电力; 以及用于通过等离子体产生的高频电力将气体转化为等离子体的装置,并且通过等离子体的作用对安装台上的晶片进行等离子体处理。 在该等离子体处理装置中,在处理容器内暴露于等离子体的表面之外,至少与晶片安装的上电极侧,天线电极侧或下电极侧的高度相同的一部分或全部表面 位置被氟化物覆盖。
    • 6. 发明专利
    • Method and device for forming carbon film
    • 形成碳膜的方法和装置
    • JP2011214150A
    • 2011-10-27
    • JP2011060666
    • 2011-03-18
    • Nanotec CorpTocalo Co Ltdトーカロ株式会社ナノテック株式会社
    • NAKAMORI HIDEKIHIRATSUKA MASANORIKOBAYASHI KEIGO
    • C23C14/06C23C14/34
    • PROBLEM TO BE SOLVED: To provide a method and device for forming carbon film capable of forming a preferable and high-quality carbon film on the surface of material to be processed under a low-temperature environment.SOLUTION: The device for forming carbon film includes: a substrate 2 retaining the material 4 to be processed thereon in a vacuum chamber 1 which can be evacuated to a prescribed degree of vacuum and having a prescribed voltage applied by a substrate voltage-applying means 3; and a plasma generation source which turns a medium gas for discharge generation introduced into the vacuum chamber 1 into plasma based on adjusting power outputted from a pulse electric source 7 to a carbon raw material substrate 5 and discharges the plasma together with carbon raw material toward the material 4 to be processed retained by the substrate 2 from the carbon raw material substrate 5 on the carbon raw material substrate 5 oppositely arranged to the substrate 2. Thereby, the carbon film is processed and formed by the plasma discharged on the surface of the material 4 to be processed.
    • 要解决的问题:提供一种形成碳膜的方法和装置,该方法和装置能够在低温环境下在待处理材料的表面上形成优选和优质的碳膜。解决方案:用于形成碳膜的装置包括 :将真空室1内的被处理材料4保持在规定的真空度并由基板电压施加单元3施加的规定电压的基板2; 以及等离子体产生源,其基于从脉冲电源7向碳原料基板5输出的调节功率,将引入真空室1的放电产生介质气体转换为等离子体,并将等离子体与碳原料一起朝向 由碳素原料基板5上的碳原料基板5与基板2相对配置的被基板2保持的被处理材料4,由此,将碳膜通过在该材料的表面上排出的等离子体进行处理 4待处理。