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    • 1. 发明专利
    • SEMICONDUCTOR INTEGRATED CIRCUIT
    • JPH09200014A
    • 1997-07-31
    • JP1017596
    • 1996-01-24
    • TOSHIBA CORPTOSHIBA INF SYST JAPAN CORP
    • ISHIMOTO SHINJIFUKUDA HIDEKI
    • H01L27/04H01L21/822H03K3/02H03K17/00H03K19/00H03K19/0175
    • PROBLEM TO BE SOLVED: To allow a circuit to select automatically with an optional setting of a power supply voltage by connecting each input to plural input buffers and selecting any of the plural input buffers in response to an output signal from a voltage detection circuit. SOLUTION: An input of an input buffer 2 having a prescribed drive capability with a power supply voltage set to 5V and an input of an input buffer 3 having the same drive capability with a power supply voltage set to 3V are connected to an I/O pad 1. Then an output of the buffer 2 connects to an input e1 and an output of the buffer 3 connects to an input e2 of a 2-input 1-output multiplexer circuit 5. Then an output f1 of a voltage detection circuit 4 providing an output of a digital signal with a level '0' with a power supply voltage set to 5V and providing an output of a digital signal with a level '10' with a power supply voltage set to 3V connects to a selector terminal e5 of the circuit 5. When the circuit 5 receives a level '0' from the circuit 4, the circuit 5 selects the terminal e1 and when the circuit 5 receives a level '1' from the circuit 4, the circuit 5 selects the terminal e2. Then either of the buffers 2, 3 is selected automatically.
    • 2. 发明专利
    • Method of designing semiconductor integrated circuit
    • 设计半导体集成电路的方法
    • JP2010141005A
    • 2010-06-24
    • JP2008314290
    • 2008-12-10
    • Toshiba Corp株式会社東芝
    • ISHIMOTO SHINJITOMONO MASAYA
    • H01L21/82G06F17/50H01L27/118
    • PROBLEM TO BE SOLVED: To provide a method of designing a semiconductor integrated circuit increasing the degree of freedom in design change after arranging and interconnecting of the semiconductor integrated circuit to improve performance.
      SOLUTION: The method includes an arranging and interconnecting step S1 of arranging and interconnecting a standard cell, a timing analysis step S2 of performing timing analysis on arranging and interconnecting data obtained at the standard cell arranging and interconnecting step S1, a gate array cell insertion step S3 of inserting a gate array cell into a path including a violation on the arranging and interconnecting data based on a result obtained at the timing analysis step S2, replacement standard cell extracting steps (S5-S8) of extracting a replacement standard cell which is logically equivalent to the gate array cell from the arranging and interconnecting data when another violation occurs in the violation-including path by inserting the gate array cell, and a standard cell replacing step S9 of replacing the gate array cell with the replacement standard cell due to design change of a wiring layer.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种设计半导体集成电路的方法,其在布置和互连半导体集成电路之后提高设计变化的自由度以提高性能。 解决方案:该方法包括布置和互连标准单元的布置和互连步骤S1,对在标准单元布置和互连步骤S1获得的数据进行布置和互连的时序分析的时序分析步骤S2,门阵列 基于在定时分析步骤S2获得的结果,将门阵列单元插入到布置和互连数据的路径的路径中的单元插入步骤S3,提取替换标准单元的替换标准单元提取步骤(S5-S8) 当通过插入门阵列单元在违反包含路径中发生另一次冲突时,逻辑上等同于门阵列单元的阵列单元;以及用替换标准单元替换门阵列单元的标准单元替换步骤S9 由于布线层的设计变化。 版权所有(C)2010,JPO&INPIT
    • 6. 发明专利
    • FUEL ASSEMBLY FOR WATER-COOLED NUCLEAR REACTOR
    • JP2000081494A
    • 2000-03-21
    • JP25260298
    • 1998-09-07
    • HITACHI LTDNIPPON NUCLEAR FUEL DEVTOSHIBA CORP
    • ISHIMOTO SHINJINANIKAWA SHIYUUICHINONAKA YOSHIOAOMI MASAKI
    • G21C3/30G21D1/00G21D3/08
    • PROBLEM TO BE SOLVED: To improve hydrogen absorption resistance and corrosion resistance under an environment in which hydrogen is injected into reactor water by arranging an excellently hydrogen absorption resistant material in at least a part of a one-phase area of a liquid phase consisting of high temperature water environment on the member surface and arranging an excellently corrosion resistant material in the other place. SOLUTION: In a fuel assembly used for a boiling water reactor, for example, in which hydrogen is injected into reactor water for the purpose of reducing corrosion, a Zr-Nb alloy is used as an especially excellent hydrogen absorption resistant material while a zircaloy alloy is used as an especially excellent corrosion resistant material. For example, a Zr-Nb alloy or the like is used for a spacer 2 arranged in a one-phase area of liquid phase consisting of high temperature water and for a member 6 securing a water flow passage, while a zircaloy alloy or the like is used for a spacer 2 arranged in a two-phase area constructed of a liquid phase consisting of high temperature water and a gas phase, a fuel rod 1, and a channel box 5. In an area having no temperature distribution in the member, an excellently hydrogen absorption resistant material is arranged.