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1. 发明专利

JPH07288195A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JPH07288195A
公开(公告)日：1995-10-31
申请号：JP3411095
申请日：1995-02-22
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： SAKAI ITSUKO , SEKINE MAKOTO , HORIOKA KEIJI , YOSHIDA YUKIMASA , INASAWA KOICHIRO , OGASAWARA MASAHIRO , ISHIKAWA YOSHIO , EGUCHI KAZUO
IPC分类号： H05H1/46 , C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a plasma treatment apparatus which can moderate the deflection of plasma due to EXB drift and which can carry out treatment uniformly on the whole surface of a substrate. CONSTITUTION:A first electrode 11 and a second electrode 12 facing each other and on which a wafer 13 is mounted are installed in a vacuum container 10. A gas supply system 22 to supply reactive gases and an evacuating system 23 to evacuate the container 10 are connected with the container 10. A high frequency power source 14 to form an electric field between the electrodes 11 and 12 is connected with the electrode 11. A circular magnetic system 30M to form a magnetic field B having a center face crossing the electric field E is installed in the circumference of the container 10. The magnetic system 30M is provided with a plurality of magnet elements having different magnetic directions one another in the center face of the magnetic field B. Electrons drift due to the power produced based on the product EXB wherein the E stands for the electric field and B for the magnetic field. The center face of the magnetic field B is so set as to shift to upper position than the surface to be treated and magnetic fluxes cross the surface to be treated.

2. 发明专利

JPH0529269A MAGNETRON PLASMA PROCESSING DEVICE 失效
公开(公告)号：JPH0529269A
公开(公告)日：1993-02-05
申请号：JP20740891
申请日：1991-07-23
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP , TEL YAMANISHI KK
发明人： HORIOKA KEIJI , HASEGAWA MAKOTO , ISHIKAWA YOSHIO , HIRATSUKA MASATO
IPC分类号： H01L21/203 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To provide a magnetron plasma processing device where a process object can be lessened in charge-up damage done to its peripheral part. CONSTITUTION:A conductive ring 22 higher than a wafer in electrical conductivity is provided surrounding the periphery of the wafer 10. Electrons located in the vicinity of the outer periphery of a plasma generating region are taken in by the conductive ring 22 to lessen the vicinity of the periphery of the plasma generating region in electron density. By this setup, ions injected into a processed object can be lessened in number.

3. 发明专利

JPH05166770A DRY ETCHING 失效
公开(公告)号：JPH05166770A
公开(公告)日：1993-07-02
申请号：JP35207491
申请日：1991-12-13
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： TAWARA YOSHIFUMI , HIRANO YOSHIHISA , HASEGAWA ISAHIRO , HORIOKA KEIJI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To improve etching speed SiO2 or the like so as to avoid etching of Si and a photoresist by setting the temperature of a body to be treated at the time of etching below 0 deg. and using mixed gas of gas containing carbon and oxygen having the oxidation number nor exceeding 4 and halogen group gas as plasma gas. CONSTITUTION:Cooling gas is introduced into the piping 36 to cool a first susceptor 12 so as to control a temperature of a wafer 10 to a prescribed temperature not exceeding 0 deg.C through it. with the surface 30a of the upper chamber 30 as a cathode electrode and the surface of the first susceptor 12 as an anode electrode a magnetron plasma etching device of an RIE system is established. Gas containing carbon and oxygen having the oxidation number not exceeding 4, for instance, mixed gas of Co and halogen group gas, for instance CHF3 gas, is mixed as etching gas to be introduced from an etching gas leading-in part 30b into the chamber. This etching gas heights etching speed and a selection ratio to Si and a photoresist of a film to be etched.

4. 发明专利

JPH0513374A DRY ETCHING DEVICE AND METHOD 失效
公开(公告)号：JPH0513374A
公开(公告)日：1993-01-22
申请号：JP27708891
申请日：1991-09-27
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： HORIOKA KEIJI , HASEGAWA ISAHIRO , OKANO HARUO , OKUMURA KATSUYA , KUBOTA SHINJI , KUMAGAI HIROMI , ARAMI JIYUNICHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To enable the title dry etching method with high precision to be applied by a method wherein an even magnetic field is formed on the whole surface of an element to be processed so as to induce even plasma. CONSTITUTION:A wafer 14 to be arranged in a vacuum vessel (processing chamber) 20 is mounted on a lower electrode 22 while an upper electrode 24 is arranged oppositely to the wafer 14. Next, a permanent magnet 30 is magnetized to have S, N polarities on both ends of a magnetic block so that a horizontal magnetic field orthogonal to the perpendicular electric field generated in the space between the electrodes 22 and 24 may be formed by providing a dent depressed stepwise or in taper shape. Finally, when an etching gas is fed to the space between the electrodes 22 and 24, a plasma with even density can be induced on the whole wafer 14 surface thereby enabling the title dry etching method with high precision to be applied.

5. 发明专利

JPH04139722A MAGNETRON PLASMA TREATMENT DEVICE 失效
公开(公告)号：JPH04139722A
公开(公告)日：1992-05-13
申请号：JP26129590
申请日：1990-09-29
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： HORIOKA KEIJI , OKUMURA KATSUYA , KUBOTA SHINJI , KUMAGAI HIROMI , ARAMI JIYUNICHI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065
摘要： PURPOSE:To make the thickness of a plasma sheath uniform so as to improve the in-plane uniformity of such a treatment as etching rate, etc., by providing a member which discharges secondary electrons by utilizing the collision of electrons on the outer periphery of an object to be treated. CONSTITUTION:A ring-like member 38 which discharges secondary electrons by utilizing collisions of electrons and, at the same time, forms an approach- running section for the secondary electrons is provided on the outer periphery of a wafer 14 where the member 38 faces plasma. Magnetic lines of force passing through the space between parallel plate electrodes 22 and 24 are formed between outer surfaces of a permanent magnet 30 on both end sides in the direction of magnetization and the magnetic field (with a density of magnetic lines of force of, for example, about 100G) formed near the wafer 14 is parallel to the surface of the wafer 14 and perpendicular to the electric field between the electrodes 22 and 24. When the permanent magnet 30 is rotationally driven, a parallel magnetic field can be formed uniformly on the entire surface of the wafer 14.

6. 发明专利

JPH0547715A MAGNETRON PLASMA PROCESSOR 失效
公开(公告)号：JPH0547715A
公开(公告)日：1993-02-26
申请号：JP23406091
申请日：1991-08-20
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： NOZAWA TOSHIHISA , HORIOKA KEIJI , HASEGAWA TAKUHIRO
IPC分类号： H01L21/205 , C23C14/35 , H01J37/34 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To provide the subject apparatus capable of preventing a leakage magnetic force from producing any adverse effects on the other constituent elements and of performing an even processing on the entire surface of an object to be processed. CONSTITUTION:A magnetic field generating means 20 is arranged in a peripheral groove 32a to reduce the leakage magnetic flux thereby to prevent any leakage of the magnetic force from affecting the other constituent elements of the apparatus. Further, this peripheral groove 32a is arranged in an area surrounding the magnetron plasma generating region of the wall part which forms a reaction chamber 30. Hence, the intensity of the horizontal component of the magnetic field becomes even on the entire surface of a wafer 50. Furthermore, the wall of the reaction chamber 30 in which the peripheral groove 32a is formed, and the magnetic field generating means 20 are arranged shiftable in the direction perpendicular to parallel flat electrodes 12 and 32 when the wafer 50 is brought into the reaction chamber 30 and brought out from the reaction chamber 30. Thus, the volume of the reaction chamber 30 is made small at the time of processing.

7. 发明专利

JPH04196528A MAGNETRON ETCHING SYSTEM 失效
公开(公告)号：JPH04196528A
公开(公告)日：1992-07-16
申请号：JP33131790
申请日：1990-11-28
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： HORIOKA KEIJI , HASEGAWA ISAHIRO , ARAMI JIYUNICHI , NOZAWA TOSHIHISA
IPC分类号： H01L21/302 , H01J37/32 , H01L21/00 , H01L21/3065 , H01L21/683
摘要： PURPOSE:To obtain a magnetron etching system wherein an object to be treated can be treated at a low temperature of desired treatment, by interposing a thermal resistance member in a low temperature conduction route from a low temperature generating source, so as to be able to set the object to be treated at an optimum negative temperature, correspondingly with various kinds of treatment condition. CONSTITUTION:In the case of magnetron plasma etching, a wafer 10 as an object to be treated is cooled. As a cooling part, a liquid nitrogen accommodation part 20 is installed and cools the wafer 10. Temperature is controlled by a ceramic heater 15, in order to keep a set temperature. When, on account of the set cooling temperature of the wafer 10, the cooling power from the liquid nitrogen accommodation part 20 is too sufficient, a thermal resistance member 16 is interposed, thereby decreasing the cooling power from the part 20. Consumption power necessary for temperature control is reduced by a ceramic heater 15. The thermal resistance can be adjusted in response to the set cooling temperature of the wafer 10, by adjusting the pressure of He gas filled between a first and a second susceptors 12, 14.

8. 发明专利

JPH0478133A PLASMA TREATING DEVICE 失效
公开(公告)号：JPH0478133A
公开(公告)日：1992-03-12
申请号：JP19246590
申请日：1990-07-20
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： ARAMI JIYUNICHI , NOZAWA TOSHIHISA , HORIOKA KEIJI , OKUMURA KATSUYA
IPC分类号： C23C14/40 , C23C14/50 , C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/683
摘要： PURPOSE:To reduce the leakage of RF and prevent the destruction of the insulating layer of an electrostatic chuck by constituting an RF feeding rod in a double-tube structure, with the inside tube being used for earthing and the outer tube being used for applying high-frequency power, and passing a cable constituted in such a way that the cable is electrically connected to an upper susceptor or insulated from the susceptor, but has a floating capacity together with the susceptor, through the inside of the inner tube. CONSTITUTION:In order to feed the first susceptor 20 with RF power, an RF feeding rod 30 constituted in a double-tube structure of an RF power feeding rod 30b which is an outer tube and another RF power feeding rod 30a which is an inner tube is provided through the second susceptor 22 in such a way that the outside of the feeding rod 30a is shielded by means of the feeding rod 30b and the upper end of the rod 30a is electrically connected with the first susceptor 20, with the lower end being connected to an RF power source 36 through a cable. In addition, a cable 40 for applying a high-voltage across an electrostatic chuck 12 is coaxially passed through the hollow section 32 of the feeding rod 30a. The upper end of the cable 40 is connected with an applying head 42 which is, in term, connected to the conductor 14 of the chuck 12.

9. 发明专利

JPH05247673A 失效
公开(公告)号：JPH05247673A
公开(公告)日：1993-09-24
申请号：JP29659991
申请日：1991-10-17
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： TAWARA YOSHIFUMI , HIRANO YOSHIHISA , HASEGAWA ISAHIRO , HORIOKA KEIJI
IPC分类号： C23F1/44 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/311
摘要： PURPOSE:To improve anisotropy and also to improve a microloading effect by etching an oxide film or a nitride film highly selectively to a base plate. CONSTITUTION:When a semiconductor wafer 5 on which the oxide film or nitride film is formed is inserted into a treating vessel 1 and in the case of etching the oxide film or nitride film of the semiconductor wafer 5 by the plasma of gaseous CHF3 in the treating vessel 1, gaseous CO is used for the atmosphere of plasma.

10. 发明专利

JPH05166757A TEMPERATURE REGULATOR FOR MATERIAL TO BE PR0CESSED 失效
公开(公告)号：JPH05166757A
公开(公告)日：1993-07-02
申请号：JP35207391
申请日：1991-12-13
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： HIRANO YOSHIHISA , TAWARA YOSHIFUMI , HASEGAWA ISAHIRO , HORIOKA KEIJI
IPC分类号： B23Q3/15 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/683
摘要： PURPOSE:To improve heat exchanging ratio of heat exchanging gas to be introduced between a wafer and a placing base and to minimize adverse influence to a process if the gas is leaked into a processing chamber. CONSTITUTION:Heat exchanging gas of a predetermined pressure is filled between a wafer 10 and an electrostatic attraction sheet 40 of its rear side through a tube 36 in an etching apparatus. If the gas is CHF3, CF4 containing only carbon C and fluorine F of partial components of the composition of the gas is used as the heat exchanging gas. The CF4 improves its heat exchanging ratio as compared with He of conventional heat exchanging gas and contains the same components as those of the etching gas. Accordingly, even if it is leaked into a processing chamber, adverse influence to a process can be reduced to a minimum limit.

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