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1. 发明专利

JPH0747201A VAPORIZATION SYSTEM 失效
公开(公告)号：JPH0747201A
公开(公告)日：1995-02-21
申请号：JP21501993
申请日：1993-08-06
申请人： TOSHIBA CORP , CKD CORP
发明人： NAGAMATSU TAKAHITO , YOSHIDA TAKAMITSU , YAJIMA HIROMI , AOKI RIICHIRO , SUDO YOSHIHISA , ITO MINORU
IPC分类号： B01D1/00 , B01J7/00 , B01J7/02 , C23C16/44 , C23C16/448 , H01L21/31
摘要： PURPOSE:To provide a vaporizer and a vaporization system by means of which a material being a liq, at ordinary temp. and ordinary pressure can be fed into a vapor phase reaction tank etc., by controlling precisely vaporization of the material. CONSTITUTION:This vaporization system is constituted of a quantitative pump 3, a check valve 2 and a vaporizer 1. The quantitative pump 3 feeds a specified amt. of TEOS to the check valve 2 by up and down movement of a rod 22 set through a bellows 23. At this time, a valve body 32 of the check valve 2 is separated from a valve seat 33 and TEOS is sent to the vaporizer. As a flat plate 11, etc., are heated by means of an electric heater 12 in the vaporizer 1, TEOS is surely vaporized and is mixed with an assist and it is fed as a mixed gas into a gas phase reaction tank, etc. Therefore, TEOS is stably vaporized without generating reliquefaction on the inner wall, etc., of the vaporizer 1 to contribute to a stable operation of the process and the yield by the process is also improved.

2. 发明专利

JPH07211708A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07211708A
公开(公告)日：1995-08-11
申请号：JP354994
申请日：1994-01-18
申请人： TOSHIBA CORP
发明人： KAJI SHIGEHIKO , AOKI RIICHIRO , TOYAMA HIROYUKI , EGAWA HIDEMITSU , YOSHIDA TAKAMITSU , NISHIYAMA YUKIO
IPC分类号： H01L21/205 , C23C16/40 , C23C16/509 , H01L21/31 , H01L21/316
摘要： PURPOSE:To form silicon oxide film containing fluorine having excellent coverage without deteriorating an underneath element at all by plasma CVD process. CONSTITUTION:A parallel flat plate type plasma CVD device having an upper electrode 14 and a lower electrode 15 whereon high-frequency power in two frequencies is impressed from the first and second high-frequency power sources 12 and 13 is used so that a material gas containing at least an organic silicon compound, a fluorine carbon compound and oxygen as well as in fluorine/silicon element ratio exceeding 15 may be led into a chamber 11 to form a silicon oxide film containing fluorine on a substrate 30.

3. 发明专利

JP2014041854A Method for manufacturing semiconductor device and semiconductor device 审中-公开
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：JP2014041854A
公开(公告)日：2014-03-06
申请号：JP2012182018
申请日：2012-08-21
申请人： Toshiba Corp , 株式会社東芝
发明人： TOYODA GEN , KUDO TOMOYASU , SATO HIROSHI , TANIDA KAZUMA , OKADA TAKANORI , HONGO SATOSHI , YAMAMOTO SUSUMU , YOSHIDA TAKAMITSU
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of improving a yield of a semiconductor device manufactured by mechanically polishing a rear surface side of a wafer stuck to a support substrate, and a semiconductor device.SOLUTION: According to one embodiment, a method for manufacturing a semiconductor device is provided which includes a first step, a second step, a third step, and a fourth step. The first step deposits a protective film having resistance to mechanical polishing for wafer polishing on a surface of a support substrate. The second step sticks a surface on the side where a semiconductor element is formed in a wafer to a surface on the side where the protective film is formed in the support substrate. The third step thins the wafer to a prescribed thickness by grinding a rear surface of the wafer. The fourth step removes a peripheral edge of the wafer by polishing the peripheral edge of the wafer from the rear surface side of the wafer by mechanical polishing until it reaches the protective film after the third step.
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，所述半导体器件能够提高通过机械抛光粘附到支撑衬底的晶片的背面侧制造的半导体器件的成品率和半导体器件。解决方案：根据一个提供了一种制造半导体器件的方法，其包括第一步骤，第二步骤，第三步骤和第四步骤。第一步骤是在支撑基板的表面上沉积具有抵抗机械抛光的晶片抛光的保护膜。第二步骤将在晶片上形成半导体元件的一侧上的表面粘附到在支撑衬底中形成保护膜一侧的表面。通过研磨晶片的后表面，第三步将晶片沉淀到规定的厚度。第四步骤通过机械抛光从晶片的后表面侧研磨晶片的周边边缘，直至在第三步骤之后到达保护膜，从而去除晶片的外围边缘。

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