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1. 发明专利

JPH11160191A WATER LEAKAGE DETECTOR 失效
公开(公告)号：JPH11160191A
公开(公告)日：1999-06-18
申请号：JP33147397
申请日：1997-12-02
申请人： TOSHIBA CORP
发明人： YOSHIDA MASAO
IPC分类号： G01F1/00 , G01M3/28
摘要： PROBLEM TO BE SOLVED: To perform the provision for the generation of water leakage accident with high responsiveness by detecting the difference between the water supply quantity and draining quantity amplifying the difference to be compared with a specified value, and outputting the emergency stop command under a condition that the difference is over the specified value. SOLUTION: An air cooler 1 mounted on a rotating machine or the like, and a water supply piping 2 and a drain piping 3 of an oil-cooled piping mounted on a bearing of the rotating machine are penetrated through a leakage detecting part 4, and the difference between an amount of water flowing in the water supply piping 2 and that flowing in the drain piping 3 is fetched as an electric signal. The electric signal of the difference of the amount of water is amplified in an amplifying and comparing part 5 to be compared with a predetermined cross level (specified value). When the amount of water is over the cross level, it is judged as the leakage, the emergency stop command is output to an observing device and a warning device from a signal output part 6 to shut down a valve 7 and to stop an equipment. The leakage detecting part 4 comprises a self-check function to grasp the condition itself.

2. 发明专利

JPS64284A PLASMA ACCELERATOR 失效
公开(公告)号：JPS64284A
公开(公告)日：1989-01-05
申请号：JP14647587
申请日：1987-06-12
申请人： TOSHIBA CORP
发明人： FUJIWARA NAOYOSHI , HAMASHIMA KOTARO , NINOMIYA MASAHARU , YOSHIDA MASAO
IPC分类号： C23F4/00
摘要： PURPOSE:To widen the control range of a plasma speed by adopting the control by Lorentz force and the control by ion energy using high frequencies to accelerate the plasma. CONSTITUTION:A DC voltage is impressed between a pair of accelerating electrodes 1a and 1b by an accelerating power supply 2. A high-frequency power supply 7 is connected to a wafer base 5 which supports a wafer to serve as a target and a high-frequency voltage is impressed between the wafer base 5 and the electrodes 1a, 1b. The plasma 8 flows between the electrodes 1a and 1b and is accelerated toward the wafer base 5. Current (j) flows between the electrodes 1a and 1b and the magnetic field generated by a magnetic field generating means is generated at a specific angle to the current (j) as shown by an arrow B. The Lorentz force F, therefore, acts toward the wafer base 5. The size thereof is determined by jXB. The acceleration of the plasma 8 is executed by controlling the voltage of the accelerating power supply 2.

3. 发明专利

JPS63310979A TRANSPORT DEVICE OF PLASMA 失效
公开(公告)号：JPS63310979A
公开(公告)日：1988-12-19
申请号：JP14647487
申请日：1987-06-12
申请人： TOSHIBA CORP
发明人： HAMASHIMA KOTARO , FUJIWARA NAOYOSHI , OKUYAMA TOSHIHISA , YOSHIDA MASAO
IPC分类号： C23F4/00
摘要： PURPOSE:To efficiently transport plasma to the prescribed direction by overlapping a pulasting magnetic field furthermore on the stationary magnetic field formed on the transport path of plasma in a processing equipment for utilizing plasma. CONSTITUTION:A semiconductor wafer is put on a base 8 for the wafer in a vacuum vessel 6 and microwaves generated in a magnetron 3 are introduced into a quartz pipe 5 via a waveguide 4. A plurality of solenoid coils 1-1-1-n provided to the outside of the quartz 5 are connected with the respective electric sources 2-1-2-n and the respective electric sources are connected with a controlling device 9. The electric sources 2-1-2-n are capable of feeding both stationary current consisting of DC component and pulsating current consisting of AC component, and current overlapped with both components is allowed to flow and the respective electric sources are controlled with the controlling device 9 and thereby the magnetic fields formed by the coils 1-1-1-n can be controlled. The reactive gas supplied through a pipe 7 is made to plasma by resonance of an electric cyclotron based on the microwaves and the magnetic fields caused with the coils, and the semiconductor wafer is subjected to etching processing. The above-mentioned magnetic fields allow plasma to be efficiently transported to the necessary parts on the semiconductor wafer by means of the magnetic gradient due to the pulsating parts of current.

4. 发明专利

JPS6468863A MEMORY CONTROLLER 失效
公开(公告)号：JPS6468863A
公开(公告)日：1989-03-14
申请号：JP22730987
申请日：1987-09-10
申请人： TOSHIBA CORP
发明人： OSAKI EIJI , KOBAYASHI TSUKASA , HORII SHIGEKATSU , YOSHIDA MASAO
IPC分类号： G06F12/06 , G06F13/16
摘要： PURPOSE:To eliminate a need of extension of a main memory even in case of processing of a considerable quantity of take-in data in a control means by practically extending the I/O address space in a logical memory space of the memory control means. CONSTITUTION:Data AD1 of lower bits of address data AD of a frame memory 18 is sent with an address line 16b and data AD2 of upper bits is sent with a data line 16a, and these data AD1 and AD2 are coupled in a register 14 provided in an interface 15 as one body to generate address data AD which designates the address of the frame memory 18. Thus, a practical extended main memory 20 (surrounded with a broke line) is formed with a main memory 12 of a host computer 10, an interface 17, and the frame memory 18, and extension of the main memory 12 or the like is unnecessary even in case of picture processing of considerable reception data.

5. 发明专利

JPH1115607A PRINTING RESTORATION METHOD/SYSTEM 失效
公开(公告)号：JPH1115607A
公开(公告)日：1999-01-22
申请号：JP16417697
申请日：1997-06-20
申请人： TOSHIBA CORP
发明人： YOSHIDA MASAO
IPC分类号： B41J29/46 , G06F3/12
摘要： PROBLEM TO BE SOLVED: To eliminate unnecessary printing and to save the waste of printing paper. SOLUTION: Once a printing request reception part 12 has stored a job number and one character printing data in a non-volatile storage device 14, a printing control part 15 reads the job number and printing data by one character and transmits them in a printing request system 1. A printing device 2 stores the transmitted job number in a non-volatile storage device 22 and counts up the counter of the non-volatile storage device 22 whenever printing data are printed one character by one. When the system is down and it is started again in such a state, the printing device 2 reads the job number and counting data from the non-volatile storage device 22 and transmits them to the printing request system 1. The printing request system 1 reads printing data of counting data + first character from printing data corresponding to the job number based on the job number and counting data and transmits them to the printing device.

6. 发明专利

JPH02209728A DRY ETCHING OF ALUMINUM AND ALUMINUM ALLOY 失效
公开(公告)号：JPH02209728A
公开(公告)日：1990-08-21
申请号：JP3052689
申请日：1989-02-09
申请人： TOSHIBA CORP
发明人： SAKAI ITSUKO , YOSHIDA MASAO , SEKINE MAKOTO , OKANO HARUO , ARIKADO TSUNETOSHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3205
摘要： PURPOSE:To obtain an etched smooth surface when aluminum or aluminum alloy is subjected to dry etching in a discharge plasma by a method wherein the gas pressure of employed etching gas and a bias voltage conform to a specific relation. CONSTITUTION:An etching chamber 10 has a first electrode 12 which is provided in a vacuum chamber 10a and on which a treated substrate 11 is put, a radio frequency source 14 which is connected to the first electrode 12 through a blocking capacitor 13 in order to apply a radio frequency voltage of 13.56MHz to the first electrode 12, a cooling pipe 15 for cooling the first electrode 12, a chlorine gas supply line 16 and a boron chloride supply line 17. The radio frequency voltage is applied between the first electrode 12 and the inner wall of the vacuum chamber 10a while chlorine and boron chloride are introduced into the vacuum chamber 10a. The gas pressure P of the employed etching gas and a bias voltage V conform to a relation V>140+100logP. With this constitution, a smooth etched surface free from etching remnants and with little unevenness can be obtained.

7. 发明专利

JPS642321A PLASMA ETCHING DEVICE 失效
公开(公告)号：JPS642321A
公开(公告)日：1989-01-06
申请号：JP15865287
申请日：1987-06-25
申请人： TOSHIBA CORP
发明人： HAMASHIMA KOTARO , FUJIWARA NAOYOSHI , NINOMIYA MASAHARU , YOSHIDA MASAO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To make it possible to conduct high speed etching by a method wherein the etching is conducted by confining the plasma of etching gas produced by the microwave excitation between paralleled flat-plate electrodes using a magnetic field applying means. CONSTITUTION:Etching gas is introduced into the quartz tube 2 of a vacuum container 1, magnetic field is generated by applying a current on coils 7A and 7B, and at the same time, microwaves are generated by a magnetron 10, and plasma is generated by allowing the magnetic field and high frequency electric field to work on the etching gas. As bias voltage is applied between the electrodes 4 and 6, plasma ions are accelerated, and the wafer 5 placed on the electrode 4 is etched. At this time, plasma is confined between the electrodes 4 and 6 by magnetic field Mmirror and MCUSP for confinement. Accordingly, plasma density can be enhanced, and high-speed etching can be conducted without giving damage on the wafer.

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