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1. 发明专利

JP2004086014A Display device and electronic apparatus 有权
公开(公告)号：JP2004086014A
公开(公告)日：2004-03-18
申请号：JP2002248942
申请日：2002-08-28
申请人： Toshiba Corp , 株式会社東芝
发明人： KOBAYASHI MICHIYA
IPC分类号： G02F1/1335 , G02F1/1343 , G02F1/1368 , G09F9/30 , G09F9/40 , H01L27/32 , H01L51/50 , H05B33/26 , H05B33/14
CPC分类号： H01L27/3267 , H05B33/26
摘要： PROBLEM TO BE SOLVED: To provide an electronic apparatus which is capable of displaying pictures on both surfaces and, moreover, can be made thin and to provide a flat display device which can realize such an electronic apparatus. SOLUTION: The flat display device 1 is provided with light-shielding first pixel electrodes 31, 32, a light-transmissive second pixel electrode 32, common electrodes 35, 36 and an optical layer 34. Therein, the common electrodes 35, 36 are light-transmissive in the parts that are confronted with the first pixel electrodes 31, 32 and the second pixel electrode 32 and in the parts that are confronted with the first pixel electrodes 31, 32. The common electrodes 35, 36 are light-shielding in the respective parts that are confronted with the second pixel electrodes 32. The optical layer 34 is interposed between the first pixel electrodes 31, 32 and the second pixel electrode 32, and the common electrodes 35, 36 and changes the optical characteristic in accordance with the voltage applied between the first pixel electrodes 31, 32 and common electrode 35 and the second pixel electrode 32 and the common electrodes 35, 36 or the current allowed to flow therebetween. COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2003228302A DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
公开(公告)号：JP2003228302A
公开(公告)日：2003-08-15
申请号：JP2002027123
申请日：2002-02-04
申请人： TOSHIBA ELECTRONIC ENG , TOSHIBA CORP
发明人： TOMIMATSU TOSHIFUMI , KOBAYASHI MICHIYA
IPC分类号： H05B33/04 , G09F9/00 , G09F9/30 , G09G3/32 , H01L27/32 , H01L51/50 , H01L51/52 , H01L51/56 , H05B33/22 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide a display device and a manufacturing method therefor, which can improve the reliability and processing accuracy. SOLUTION: The display device 1 is provided with an array substrate 100 with a display area 102 comprising a plurality of pixels arranged in a matrix form, and a sealing substrate 200 placed to face the array substrate 100. The display area 102 is provided with pixel switches 10 for selecting the pixels, driving control elements 20 connected with the pixel switches 10, and organic EL elements 40 driven by the driving control elements 20. In the outer periphery of the display area 102, a supporting part 300 is arranged in a frame-form so as to form a predetermined gap between the array substrate 100 and the sealing substrate 200. COPYRIGHT: (C)2003,JPO

3. 发明专利

JP2002289349A MANUFACTURING METHOD OF ORGANIC EL DISPLAY DEVICE 失效
公开(公告)号：JP2002289349A
公开(公告)日：2002-10-04
申请号：JP2001090950
申请日：2001-03-27
申请人： TOSHIBA CORP
发明人： KOBAYASHI MICHIYA
IPC分类号： H05B33/10 , G09F9/00 , H01L51/50 , H05B33/12 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic EL display device in which improving the manufacturing yield is possible and which has a superior display quality. SOLUTION: In the display area on one principal plane of the first substrate 100, an anode electrode 104 is formed, and a barrier rib 130 by which the organic EL element of respective color is sectioned is formed, and in the outer periphery of the display area, a support column 501 higher than the barrier rib 130 is formed, and a shadow mask M with an opening part AP whose size corresponds to the organic EL element partitioned by the barrier rib 130 is arranged at the support column 501, and color materials having respectively different colors are accumulated via the same opening part AP of the shadow mask M from the position of a different angle against the first substrate 100, and then an organic light-emitting layer in the organic EL element of the respective color is formed.

4. 发明专利

JPH0843801A PRODUCTION OF LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH0843801A
公开(公告)日：1996-02-16
申请号：JP17853794
申请日：1994-07-29
申请人： TOSHIBA CORP
发明人： KOBAYASHI MICHIYA , HAMAMOTO CHIHIRO
IPC分类号： G02F1/13 , G02F1/1333
摘要： PURPOSE:To provide a liquid crystal display device which is uniform in performance, is free from deterioration in connecting wiring in region on the outer side of a display screen and liquid crystal driving circuits and has high reliability and high image display quality. CONSTITUTION:An uncured liquid crystal layer material 102 in the region on the outer periphery of the screen has the material characteristic that the material is extremely easily soluble in a solvent as compared with a cured liquid crystal layer 205 after the liquid crystal layer material is applied on a substrate and is formed as the liquid crystal layer 205 by selectively curing the region of the screen. The liquid crystal layer material 102 of the uncured part enclosing the region of the screen where the liquid crystal layer 205 is formed is, thereupon, dissolved away by the solvent by taking advantage of such material characteristic.

5. 发明专利

JPH05232450A 失效
公开(公告)号：JPH05232450A
公开(公告)日：1993-09-10
申请号：JP3795792
申请日：1992-02-25
申请人： TOSHIBA CORP
发明人： KOBAYASHI MICHIYA
IPC分类号： G02F1/133 , G09G3/36
摘要： PURPOSE:To provide the liquid crystal display device which displays an articulate image at all times without decreasing the apparent contrast ratio of the display image formed by external light irradiation, and is thin, lightweight, and simple in manufacture process. CONSTITUTION:A 1st photodetecting element detects the illuminance of light at an invariably high-gradation part and a 2nd photodetecting element detects the illuminance of light at an invariably low-gradation part when the display panel of a liquid crystal display element 3 is irradiated with light from outside. Then an illuminance arithmetic part 4 calculates the current apparent contrast ratio from the ratio of the light illuminance detected by the 1st photodetecting element 1 and the light illuminance detected by the 2nd photodetecting element 2, and a control part 5 controls the liquid crystal applied voltage of the driving circuit 6 of the liquid crystal display device and the quantity of light of a back light 7 according to the calculated ratio to compensate a decrease in the apparent contrast ratio.

6. 发明专利

JPS5973492A Apparatus for preparation of silicon strip crystal 失效
标题翻译：用于制备硅胶条水晶的设备
公开(公告)号：JPS5973492A
公开(公告)日：1984-04-25
申请号：JP18287082
申请日：1982-10-20
申请人： Toshiba Corp
发明人： KOBAYASHI MICHIYA
IPC分类号： C30B15/34 , C30B29/06 , H01L21/208
CPC分类号： C30B15/34
摘要： PURPOSE:To enable the easy and continuous growth of a strip crystal of Si having uniform thickness, using an apparatus for the pulling of an Si strip crystal, by changing the inclination and thickness of the upper end of the capillary dies. CONSTITUTION:A pair of graphite capillary dies 2 are placed oppositely in a graphite crucible 1. The die 2 has hemiellipsoidal shape having inclined upper end and a slit formed along the long axis of the ellipsoid, and is disposed facing the inclined face inward. The Si block in the crucible 1 is melted in an Ar atmosphere to immersed the lower part of the upper end of the die 2 in the molten Si liquid 4. An Ai strip crystal 7 having uniform thickness can be obtained by pulling the crystal using a plate seed crystal.
摘要翻译：目的：通过改变毛细管芯的上端的倾斜度和厚度，可以通过使用用于拉伸Si带状晶体的装置，容易且连续地生长具有均匀厚度的Si的带状晶体。构成：将一对石墨毛细管模2相对地放置在石墨坩埚1中。模具2具有半透明形状，具有倾斜的上端和沿着椭圆体的长轴形成的狭缝，并且面向内倾斜面设置。坩埚1中的Si块在Ar气氛中熔融以将模具2的上端的下部浸入熔融的Si液体4中。具有均匀厚度的Ai带状晶体7可以通过使用板晶种。

7. 发明专利

JPS5969918A Manufacture of thin silicon crystal 失效
标题翻译：薄硅晶体的制造
公开(公告)号：JPS5969918A
公开(公告)日：1984-04-20
申请号：JP18091482
申请日：1982-10-15
申请人： Toshiba Corp
发明人： KOBAYASHI MICHIYA
IPC分类号： H01L31/04 , H01L21/02
CPC分类号： H01L21/02
摘要： PURPOSE:To eliminate the need for cutting machining and the difficulty of growth rechnique by utilizing the centrifugal force of a rotary motion and growing the thin silicon crystal on the inner surface of a cylindrical body. CONSTITUTION:A powdered release agent 2 consisting of a material difficult to moisten with silicon is applied to the inner surface of a crucible 1 made of graphite. The crucible 1 is turned at desired speed by a motor 4. A heater 5 is installed to the outer circumference of the curcible 1. The heater 5 can be heated at the melting point or more of silicon through a high-frequency induction heating system or a resistance heating system, and can be temperature-controlled in order to solidify a silicon melted liquid. The thin silicon crystal in thickness complying with conditions is obtained extremely easily and with excellent quality by properly setting the conditions of the inner diameter of the crucible, the speed of revolution and the quantity of the silicon melted liquid and the like.
摘要翻译：目的：通过利用旋转运动的离心力和在硅柱体的内表面上生长薄硅晶体，消除切割加工的需要和生长难度。构成：将由难以用硅润湿的材料构成的粉状脱模剂2施加到由石墨制成的坩埚1的内表面。坩埚1通过电动机4以所需的速度转动。加热器5安装在可控制物1的外周。加热器5可以通过高频感应加热系统加热到硅的熔点以上，电阻加热系统，并且可以进行温度控制以使硅熔化的液体固化。通过适当设定坩埚内径的条件，旋转速度和硅熔融液体的量等，可以非常容易地且以优异的质量获得符合条件的薄硅晶体。

8. 发明专利

JPH08195493A MANUFACTURE OF FILM TRANSISTOR 失效
公开(公告)号：JPH08195493A
公开(公告)日：1996-07-30
申请号：JP390295
申请日：1995-01-13
申请人： TOSHIBA CORP , TOSHIBA ELECTRONIC ENG
发明人： KASHIMOTO NOBORU , KOBAYASHI MICHIYA
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/316 , H01L21/336 , H01L29/786
摘要： PURPOSE: To form a high-quality SiOx film on a substrate material by performing thermal oxidation in oxygen or hydrogen atmosphere at a specified temperature, and oxidizing a polycrystalline silicon layer to the specified depth from the interface with a silicon oxide layer. CONSTITUTION: An SiOx film 103 is stacked, using a CVD film growth device, on the p-Si layer 102 grown on a glass substrate 101 for a liquid crystal panel at a temperature of 620 deg.C or under. And, combination thermal oxidation treatment and densification treatment is applied at a temperature not less than 500 deg.C and not more than 620 deg.C. By using hydrogen or steam atmosphere as an oxidizer for the thermal oxidation treatment at this time, oxygen is supplied toward the interface with the p-Si layer 102 from the surface of the SiOx layer 103, clean interface 105 is made between the p-Si layer 102 left without being oxidized and an oxide layer 104, 2-10nm in thickness made by oxidation. Accordingly, a p-SiTFT high in stability and favorable in operation property can be materialized.

9. 发明专利

JPH06208136A LIQUID CRYSTAL DIPLAY DEVICE 失效
公开(公告)号：JPH06208136A
公开(公告)日：1994-07-26
申请号：JP306693
申请日：1993-01-12
申请人： TOSHIBA CORP
发明人： SONODA TOMIYA , KOBAYASHI MICHIYA
IPC分类号： G02F1/1335 , G02F1/136 , G02F1/1368 , H01L29/78 , H01L29/786 , H01L29/784
摘要： PURPOSE:To provide a liquid crystal display device having a high quality of display, which can solve the problem such as disclination of a liquid crystal layer and a defect of layer short circuit and lowering of numerical aperture. CONSTITUTION:This liquid crystal display device is made of semiconductor film, which includes elements such as copper, gold, zinc, iron, cobalt and nickel for restricting the photoelectric current of a semiconductor film as impurities, and this device is provided with a shading film 129 for covering a non-picture element part between plural picture element electrodes 105, avoiding the picture element electrodes 105, and even in the case where the film thickness of the shading film 129 is about 1mum, shading property at 2-3 of optical density can be realized, and the photoelectric current thereof is restricted, and the problem such as disclination of a liquid crystal layer and a defect of layer short circuit and lowering of numerical aperture is eliminated to provide a liquid crystal display device having a high quality of display.

10. 发明专利

JPH06208134A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH06208134A
公开(公告)日：1994-07-26
申请号：JP306293
申请日：1993-01-12
申请人： TOSHIBA CORP
发明人： KOBAYASHI MICHIYA
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/78 , H01L29/786 , H01L29/784
摘要： PURPOSE:To provide a liquid crystal display device having a high quality of display with a high luminance without the lowering of withstand pressure of a gate insulating film of TFT and the lowering of electric capacity value of the storage capacity. CONSTITUTION:A dielectric 111 is formed on a first electrode 107 through openings of a first layer insulating film 109 and a second layer insulating film 131 respectively opened at a part to be formed with a storage capacity 105. Consequently, since material and film thickness of a gate insulating film 117 of a TFT 113 and the dielectric 111 of the storage capacity 105 can be set separately, dimension of the TFT 113 is reduced and the withstand pressure characteristic thereof can be set optimally, and dimension of the storage capacity 105 is reduced and the capacity value thereof can be set at the optimal value.

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