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    • 1. 发明专利
    • Active matrix liquid crystal display
    • 主动矩阵液晶显示
    • JP2005215702A
    • 2005-08-11
    • JP2005107473
    • 2005-04-04
    • Toshiba CorpToshiba Electronic Engineering Corp東芝電子エンジニアリング株式会社株式会社東芝
    • HANAZAWA YASUYUKIYAMAMOTO KAYOIZUKI YOSHIHARUKITAZAWA TOMOKONAGAYAMA KOHEINAKAZATO MASAHIROTAKEBAYASHI KISAKOIIZUKA TETSUYA
    • G02F1/1368G09F9/30
    • PROBLEM TO BE SOLVED: To provide an active matrix liquid crystal display capable of obtaining satisfactory display performance with low power consumption, by improving the aperture rates of pixels. SOLUTION: This liquid crystal display is constituted to have 1st storage capacity formed between a storage capacity electrode 42 and a pixel electrode 10, and 2nd storage capacity formed between the storage capacity electrode 42 and a storage capacity line 15, by providing the storage capacity electrode 42 on the storage capacity line 15 via a semiconductor layer 32 and an insulating film 9, made of the same materials as a semiconductor layer 32 and a gate insulating film 16, constituting a thin-film transistor 8 and connecting the pixel electrode 10 to the storage capacity electrode 42, through a contact hole 18 penetrating a protective insulating film 36 and an inter-layer insulating film 9 of the thin-film transistor 8 provided on the storage capacity electrode 42. COPYRIGHT: (C)2005,JPO&NCIPI
    • 解决的问题:通过提高像素的开口率,提供能够以低功耗获得令人满意的显示性能的有源矩阵液晶显示器。 解决方案:该液晶显示器被构成为具有在存储电容电极42和像素电极10之间形成的第一存储容量,以及形成在存储电容电极42和存储容量线15之间的第二存储容量, 通过半导体层32和由与半导体层32和栅极绝缘膜16相同的材料制成的绝缘膜9在存储电容线15上形成存储电容电极42,构成薄膜晶体管8,并连接像素电极 10通过穿过保护绝缘膜36的接触孔18和设置在存储电容电极42上的薄膜晶体管8的层间绝缘膜9连接到存储电容电极42.版权所有:(C) 2005年,JPO&NCIPI
    • 6. 发明专利
    • ACTIVE MATRIX TYPE LIQUID CRYSTAL DISPLAY DEVICE
    • JPH05110100A
    • 1993-04-30
    • JP26433491
    • 1991-10-14
    • TOSHIBA CORP
    • KITAZAWA TOMOKO
    • G02F1/136G02F1/1368H01L27/12H01L29/78H01L29/786
    • PURPOSE:To obtain an active matrix type liquid crystal display device small in flicker and free from burning by a method wherein the overlap of a channel protective film with a drain electrode is set larger in length than the overlap of the channel protective film with a source electrode. CONSTITUTION:A liquid crystal layer 61 is pinched between a pair of electrode substrates 11 and 51 where polarizing plates 71 and 78 are arranged on their outer sides, the electrode substrate 11 is composed of a transparent glass substrate 13 and a TFT 31 installed on it, the TFT 31 is equipped with a gate electrode 32 connected to a scanning electrode, a gate insulating film 33, a semiconductor layer 36, and a channel protective film 37. A drain electrode 34 is possessed of the first overlap length LD with the channel protective film 37 through the intermediary of a connection layer 38, and a source electrode 35 is possessed of the second overlap length LS with the channel protective film 37 through the intermediary of the connection layer 38, where the second overlap length LS is shorter than the first overlap length LD. The electrode substrate 51 is composed of a transparent glass substrate 53, and a common counter electrode 55 and an orientation film 57 installed on the substrate 53, and thus an active matrix type liquid crystal display small in flicker and free from burning can be realized with a TFT of this constitution.
    • 7. 发明专利
    • OPTICALLY CONTROLLING METHOD OF FILM THICKNESS OF MULTILAYERED FILM
    • JPS62227102A
    • 1987-10-06
    • JP6871686
    • 1986-03-28
    • TOSHIBA CORP
    • KITAZAWA TOMOKONAKANO HIROTAKA
    • G02B5/28
    • PURPOSE:To obtain a multilayered dielectric film filter having high spectral characteristics with high reproducibility by controlling the optical film thickness or film thickness with high precision when the optical film thickness is different from that of a dielectric multilayered film having a refractive index close to that of a substrate which has been already prepd. from a material to have a certain optical film thickness. CONSTITUTION:In a process for controlling optical film thickness of a multilayered film consisting primarily of a multilayered dielectric film formed on a substrate and having lambda0/4 optical film thickness consisting primarily of a multilayered dielectric film comprising an alternate layer of a material having high refractive index and a material having low refractive index having a different optical film thickness from lambda0/4, the optical film thickness of the layer comprising the high refractive index material is assumed to be lambda1/4, and that of a succeeding layer is assumed to be lambda2/4 [wherein at least one of lambda1 and lambda2 is not equal to lambda0, and lambda2=alambda1(alphanot equal to 1)]. In this case, the optical film thickness lambda1/4 is controlled by detecting the limiting value of the transmittance or reflectance of the light having a wavelength corre sponding to lambda1/4 of monochromatic light, and the optical film thickness lambda2/4 is controlled by detecting the limiting value of the transmittance and reflectance of light having a wave length corresponding to n times of the 1/4 wavelength of monochromatic light having a wavelength corresponding to {(a+alpha)/n}.lambda1.