专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008049426A Cutting method, and pressure vessel manufactured by cutting method 审中-公开
标题翻译：切割方法和切割方法制造的压力容器
公开(公告)号：JP2008049426A
公开(公告)日：2008-03-06
申请号：JP2006226626
申请日：2006-08-23
申请人： Toshiba Corp , 株式会社東芝
发明人： ARAI SHINJI
IPC分类号： B23C3/16
摘要： PROBLEM TO BE SOLVED: To provide a cutting method capable of processing an object surface into a roung shape with good efficiency. SOLUTION: In this cutting method 10, a surface 24a of an object 24 is processed into a round shape using a machining center 23 having a round milling-cutter 21 and a spindle 22. This cutting method 10 comprises a step 11 for fixing an object 24 in a manner that the surface 24a of the object 24 is inclined to a plane 25 perpendicular to the spindle 22 of the machining center 23 by 10 to 60 degrees, a step 12 for cutting the surface 24a of the object 24 and the forming one groove 26a by linearly moving the circular milling-cutter 21, and a step 13 for moving the circular milling-cutter 21 to a position adjacent to the groove 26a and linearly moving the circular milling-cutter 21 in parallel to the groove 26a so as to cut the surface 24a of the object 24. Therafter, by sequentially repeating the steps 12 and 13, a desired round shape is formed on the surface 24a of the object 24. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够以高效率将物体表面加工成隆起形状的切割方法。解决方案：在该切割方法10中，使用具有圆形铣刀21和主轴22的加工中心23将物体24的表面24a加工成圆形。该切割方法10包括用于以使得物体24的表面24a相对于垂直于加工中心23的心轴22的平面25倾斜10至60度的方式固定物体24，用于切割物体24的表面24a的台阶12和通过直线移动圆形铣刀21形成一个凹槽26a和用于将圆形铣刀21移动到与凹槽26a相邻的位置并使圆形铣刀21平行于凹槽26a直线移动的步骤13 以便切割物体24的表面24.经过顺序重复步骤12和13，在物体24的表面24a上形成所需的圆形。（C）2008，JPO＆INPIT

2. 发明专利

JP2002219634A DEVICE AND METHOD FOR INVERSION WORKING 失效
公开(公告)号：JP2002219634A
公开(公告)日：2002-08-06
申请号：JP2001016263
申请日：2001-01-24
申请人： TOSHIBA CORP
发明人： ARAI SHINJI
IPC分类号： B23Q17/22 , B23Q7/00
摘要： PROBLEM TO BE SOLVED: To provide automatic, stable and high coaxiality accuracy at inversion working. SOLUTION: This device to rotate a work 2 by an angle of 180 deg. for positioning it and to coaxially/inversely process the work 2 comprises a pallet 3 for calibration to be exchanged with a pallet 1 for loading a work by a pallet changer and fixing a reference member 4 on its upper face, and a work rotation axis detecting means 7 for rotating the pallet 3 by 180 deg. and measuring the center of the reference member 4 for detecting the center of a work rotation axis 5.

3. 发明专利

JPH0949089A HEAT RESISTANT MEMBER AND ITS PRODUCTION 失效
公开(公告)号：JPH0949089A
公开(公告)日：1997-02-18
申请号：JP33836195
申请日：1995-12-26
申请人： TOSHIBA CORP
发明人： WADA KUNIHIKO , ARAI SHINJI , SUENAGA SEIICHI , YASUDA KAZUHIRO , NAKABASHI MASAKO , TATEISHI HIROSHI
IPC分类号： C23C4/08 , C23C30/00
摘要： PROBLEM TO BE SOLVED: To produce a heat resistant member preventing the deterioration of the coating layer due to the formation of a nitride and the deterioration of the substrate by improving nitriding resistance. SOLUTION: In this heat resistant member provided with a metallic coating layer made of an M-Cr-Al-Y alloy layer (M is Fe, Ni or Co) 2a coated on the surface of a substrate 1, the M-Cr-Al-Y alloy layer 2a includes a region 2b in which at least one kind of nitride forming element selected from among Sc, Th, Ce, La, Ti, Zr, Hf, Nb and Ta is contained at a high concn.

4. 发明专利

JPH07180040A PRODUCTION OF METALLIZED BODY AND METALLIZED BODY 失效
公开(公告)号：JPH07180040A
公开(公告)日：1995-07-18
申请号：JP32437293
申请日：1993-12-22
申请人： TOSHIBA CORP
发明人： KOYAMA MIHO , SUENAGA SEIICHI , ARAI SHINJI , NAKAMURA SHINICHI
IPC分类号： C23C14/18 , C04B41/51
摘要： PURPOSE:To produce a metallized body by forming a highly reliable metallizing layer excellent in the shape reproducibility of a fine pattern, etc., and having a high binding strength. CONSTITUTION:A metal layer contg. at least a hexagonal active metal capable of decomposing ceramic is formed on a ceramic substrate 1 and heat-treated in a solid phase in vacuum or in an inert gas atmosphere to form a metallizing layer 2. The metal layer contg. the active metal is preoxidized prior to the heat treatment for forming the metallizing layer 2 to form the oxide of the active metal promoting the diffusion of the interface reaction product from the interface. Otherwise, a Cu-dispersed phase is formed prior to the formation of the metallizing layer contg. the active metal, and an active metal layer is formed on the Cu-dispersed phase.

5. 发明专利

JPH0782018A ZIRCONIA 失效
公开(公告)号：JPH0782018A
公开(公告)日：1995-03-28
申请号：JP23295693
申请日：1993-09-20
申请人： TOSHIBA CORP
发明人： YASUDA KAZUHIRO , ITO MASAYUKI , ARAI SHINJI
IPC分类号： C01G25/02 , C04B35/48
摘要： PURPOSE:To obtain a zicronia with secured mechanical strength and stably prevent from corrosion due to steam by incorporating mainly tetragonal zicronia with rare earth metal oxide(s) so as to come to specified concentration(s). CONSTITUTION:A zicronia >=90% in the content or tetragonal crystal is incorporated with at least one kind of rare earth metal oxide so as to come to 2.5-6.0mol% of its average concentration and 2.3-6.6mol% of its concentration in a microregion. By this design, because of specifying the average concentration(s) and the concentration if the microregion(s) of the rare earth metal oxide(s) as stabilizer(s), production of the aimed zicronia excellent in mechanical strength as well as highly excellent in corrosion resistance to steam becomes possible.

6. 发明专利

JPH0524958A METALLIZING METHOD FOR SURFACE OF ALUMINA AND JOINING METHOD 失效
公开(公告)号：JPH0524958A
公开(公告)日：1993-02-02
申请号：JP17491791
申请日：1991-07-16
申请人： TOSHIBA CORP
发明人： KOYAMA MIHO , NAKABASHI MASAKO , ARAI SHINJI , SUENAGA SEIICHI
IPC分类号： C04B37/00 , C04B41/51 , C04B41/88
摘要： PURPOSE:To execute metallizing with high precision by forming an active metal thin film constituted of one or more kinds among Ti, Zr and Hf on the surface of an Al2O3 substrate by a PVD method and then executing heat treatment at a specified temp. of its m.p. or below in vacuum. CONSTITUTION:The surface of a substrate 1 made of high purity Al2O3 is ground into a mirror face, which is degreased by acetone or the like and is thereafter subjected to surface cleaning by reverse sputtering. The surface of the above substrate 1 is subjected to masking, and after that, the pattern of a thin film 2 with 1mm to 10mum thickness of active metal constituted of at least one kind among Ti, Zr and Hf or their alloy is formed thereon by a PVD method. After that, the substrate 1 subjected to the patterning is subjected to heat treatment at 500 to 900 deg.C in high vacuum of, >=10 Torr to form a pattern with tight adhesion on the substrate 1. The substrate 1 worked as the above-mentioned manner is subjected to wet electroplating of a metal having low electric resistance such as Cu to obtain the substrate 1 melallized only on the pattern.

7. 发明专利

JPH04362096A PRODUCTION OF HEAT TRANSFER FIN 失效
公开(公告)号：JPH04362096A
公开(公告)日：1992-12-15
申请号：JP13451091
申请日：1991-06-06
申请人： TOSHIBA CORP
发明人： ARAI SHINJI , KAMATA MASATO
IPC分类号： C30B29/04 , F28F3/06
摘要： PURPOSE:To obtain the heat transfer fin of diamond having a large surface area by forming diamond crystal grains and non-diamond carboh material on a base body, then growing the crystal grains after selectively removing the latter. CONSTITUTION:The diamond columnar crystal grains 2 and the non-diamond carbon material 3 are grown on the base body 1 in a mixed growth stage (a). The ratio of the crystal grains 2 and the carbon material 3 is adjusted by adjusting the nucleus forming density of the diamond and the concn. of the gaseous carbon source in the gaseous raw material by a flawing treatment, etc., to polish the base body surface with hard powder of silicon carbide, etc., in this stage. The carbon material 3 is selectively removed by using an etching gas consisting of hydrogen, etc., in the stage (b). Two kinds of the fins are obtd. by the stages (c) (d) in the stage for forming the larger-sized crystal grains. Isotropic crystal grains 4 are formed on the columnar crystal grains 2 in (c) and the columnar crystal grains 5 are further formed on the columnar crystal grains 2 in (d). The surface area/low arae) ratio of the fins is thereby greatly increased.

8. 发明专利

JPH04357194A METHOD FOR SELECTIVE RANGE GROWTH OF DIAMOND 失效
公开(公告)号：JPH04357194A
公开(公告)日：1992-12-10
申请号：JP13017591
申请日：1991-06-03
申请人： TOSHIBA CORP
发明人： KAMATA MASATO , ARAI SHINJI
IPC分类号： C30B29/04
摘要： PURPOSE:To improve the selective growth performance in the selective range growth of a diamond. CONSTITUTION:The subject process for the selective range growth of a diamond comprises the formation of an SiC mask on the surface of a substrate material by chemical vapor deposition process and the subsequent vapor-phase synthesis of a diamond.

9. 发明专利

JPH04160074A DIAMOND POROUS BODY AND ITS PRODUCTION 失效
公开(公告)号：JPH04160074A
公开(公告)日：1992-06-03
申请号：JP28177390
申请日：1990-10-22
申请人： TOSHIBA CORP
发明人： ARAI SHINJI , KAMATA MASATO
IPC分类号： C04B38/00 , C01B31/06 , C30B29/04
摘要： PURPOSE:To obtain a diamond porous body useful as a chemical and heat resistant filter, a heat conductor, etc., by forming open pores between matrixes each made practically of diamond. CONSTITUTION:A mixed layer consisting of grown diamond crystals and a non-diamond carbonaceous material is formed on a substrate such as an Si wafer. The diamond crystals have been oriented so as to make specified crystal faces parallel to the surface of the substrate. When chemical vapor growth is carried out with a gaseous methane-hydrogen mixture, the concn. of methane is regulated to 1.5-6%, preferably 3-6% and a mixed layer consisting of diamond columnar crystals oriented with the (100) faces and a non-diamond carbonaceous material is formed. The non-diamond carbonaceous material is then selectively removed by plasma etching to form pores, diamond is isostatically grown and the resulting diamond crystals are crosslinked to obtain a porous diamond body.

10. 发明专利

JPH03236470A PRODUCTION OF DIAMOND 失效
公开(公告)号：JPH03236470A
公开(公告)日：1991-10-22
申请号：JP2971290
申请日：1990-02-13
申请人： TOSHIBA CORP
发明人： ARAI SHINJI , KAMATA MASATO , SAWABE ATSUHITO
IPC分类号： C30B25/18 , C23C16/02 , C23C16/26 , C23C16/27 , C30B29/04
摘要： PURPOSE:To efficiently produce a diamond film increased in the degree of smoothness and a large diamond grain by allowing, prior to diamond deposition treatment, a substance containing at least one element among F, Cl, Br, and I to act on the base-material surface having fine ruggedness. CONSTITUTION:A substance (e.g. CF4) containing at least one element among F, Cl, Br, and I is allowed to act on the fine rugged part formed at the base- material surface, by which the density of diamond nucleation is increased. Then, diamond deposition is carried out. By this method, the diamond film having smooth surface consisting of fine crystalline grains can efficiently be formed, and a film having uniform thickness can be formed. Further, an independent large diamond grain can be grown by securing the prescribed spaces between nucleation sites.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式