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1. 发明专利

JPH07176656A SINTERED ALUMINIUM NITRIDE HEAT DISSIPATION PLATE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH07176656A
公开(公告)日：1995-07-14
申请号：JP19658894
申请日：1994-08-22
申请人： TOSHIBA CORP
发明人： KASORI MITSUO , SHINOZAKI KAZUO , ANZAI KAZUO , UENO FUMIO , HORIGUCHI AKIHIRO , TSUGE AKIHIKO , IMAGAWA HIROSHI , TAKANO TAKESHI , INOUE HIROSHI
IPC分类号： H01L23/373 , C04B35/581
摘要： PURPOSE:To obtain a heat dissipation plate having high density and high thermal conductivity by employing a compound containing AlN, a rare earth aluminium compound, and one kind or more of group IVa, Va, VIa, VIIa or VIII transition element. CONSTITUTION:A compound containing AlN, a rare earth aluminium compound, and at least one kind of group IVa, Va, VIa, VIIa or VIII transition element is employed. For example, an AlN powder containing 1.0wt.% of oxygen, as an impurity, is admixed with 1wt.% of first additive, i.e., CaCO3, and 3.0wt.% of second additive, i.e., ZrO2, and ground. The material is then admixed with 7wt.% of binder, i.e., paraffin, and granulated before being pressed under pressure of 300kg/cm . The green compact is then heated at 700 deg.C in nitriding gas atmosphere to remove paraffin and sintered under normal temperature for two hours at 1800 deg.C in nitriding gas atmosphere.

2. 发明专利

JPH07165473A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07165473A
公开(公告)日：1995-06-27
申请号：JP28242594
申请日：1994-10-24
申请人： TOSHIBA CORP
发明人： SHINOZAKI KAZUO , ANZAI KAZUO , TAKANO TAKESHI , TSUGE AKIHIKO
IPC分类号： C04B35/581 , H01L23/15
摘要： PURPOSE:To provide a semiconductor device having excellent heat dissipation by adding a given amount of a rate earth element compound to AlN containing =90% theoretical density and >=40W/m.k thermal conductivity at a room temperature. The sintered compact of aluminum nitride is used as a radiating plate and a semiconductor element is arranged on the radiating plate to produce a semiconductor device.

3. 发明专利

JPH01236644A CIRCUIT SUBSTRATE 失效
公开(公告)号：JPH01236644A
公开(公告)日：1989-09-21
申请号：JP6404788
申请日：1988-03-17
申请人： TOSHIBA CORP
发明人： NAKAMURA MIHO , ANZAI KAZUO , IMAIZUMI TATSUYA
IPC分类号： H01L23/12 , H01L23/14 , H01L23/15 , H05K3/24
摘要： PURPOSE:To make it possible to form reliably a plating on the surfaces of metallized layers by a method wherein a liquid phase component oozed out on the surface of an Al nitride substrate is stopped and prevented from creeping up on the surfaces of the metallized layers formed on the substrate surface. CONSTITUTION:Grooves 6 are respectively formed in the surface of an Al nitride substrate 1 encircling the periphery of each metallized layer 3 in every layer 3 and the grooves 6 are stop parts that each groove receives a liquid phase component oozed out on the surface of the substrate 1 to prevent the component from moving in such a way as to come into contact to each layer 3. Here, when the substrate 1 is fired, a compound containing Al2O3, Y2O3 and so on existing in the interiors of sheets 2 as its main component and so on come to have a liquid phase and the liquid phase component oozes out on the surface of the substrate 1, but the grooves 6 perform a function of a moat and it can be reliably stopped for this oozed liquid phase component to creep up on the surfaces of the layers 3. Thereby, the discoloration of the surfaces of the layers 3 and the deterioration of the degree of roughness of the surfaces are prevented. As this result, a plating can be reliably applied to the surfaces of the layers 3 in a necessary thickness.

4. 发明专利

JPS64788A SURFACE CONDUCTIVE CERAMIC SUBSTRATE AND MANUFACTURE OF THE SAME AND METALLIZING COMPOUND FOR THE SAME 失效
公开(公告)号：JPS64788A
公开(公告)日：1989-01-05
申请号：JP4385888
申请日：1988-02-26
申请人： TOSHIBA CORP
发明人： ASAI HIRONORI , ANZAI KAZUO
IPC分类号： H05K1/09 , C04B41/90 , H01B1/02 , H05K3/12 , H05K3/38
摘要： PURPOSE:To obtain a surface conductive ceramic substrate which has a metallized layer with a small electric resistance, little variation of an adhesion strength, the high adhesion strength and the excellent maintainability of a pattern form even if a baking temperature is low by a method wherein compound containing Mo, W, group IVa active metal elements and the 4th period transition metal elements (except Ti) is applied to a nitride system ceramic substrate. CONSTITUTION:Metallizing compound is composed of 26-90wt.% high melting point metals such as Mo and W, 5-70wt.% oxides of group IVa active metals such as Ti and Zr and 2-20wt.% compounds of the 4th period transition metals (except Ti) such as Co, Ni and Fe. To manufacture a ceramic substrate, for instance, the metallizing compound is mixed with organic binder and, if necessary, dispersion medium to make paste with a required biscosity. After the paste is applied to the surface of a substrate made of nitride such as AlN and Si3N4 by a screen printing method to form a required pattern and dried, the substrate is heated and baked in the atmosphere of inert gas such as N2 to a temperature not higher than 1700 deg.C. With this constitution, a metallized layer with a high adhesion strength can be formed.

5. 发明专利

JPS6272570A ALUMINUM NITRIDE SINTERED BODY 失效
公开(公告)号：JPS6272570A
公开(公告)日：1987-04-03
申请号：JP21140285
申请日：1985-09-25
申请人： TOSHIBA CORP
发明人： KASORI MITSUO , SHINOZAKI KAZUO , AKASAKA YOSHIHIRO , TSUGE AKIHIKO , ANZAI KAZUO
IPC分类号： C04B35/581 , C04B35/58

6. 发明专利

JPS61135021A Method of manufacturing face panel 失效
标题翻译：制造面板的方法
公开(公告)号：JPS61135021A
公开(公告)日：1986-06-23
申请号：JP25561484
申请日：1984-12-05
申请人： Toshiba Corp
发明人： ANZAI KAZUO , KATO ATSUSHI
IPC分类号： H01J29/28 , H01J9/20 , H01J9/22
摘要： PURPOSE: To improve productivity of a panel by forming light reflecting metal film inside the face panel of a color receiver tube through sputtering technique and then heat absorbing film through introducing a very small amount of nitrogen gas inside the panel tube.
CONSTITUTION: Air inside a face panel 1 in which fluorescent layer 2 and a film layer 6 are formed is exhaused up to 2×10
-5 Torr vacuum by a vacuum pump system with an oil diffusion pump. Then, argon gas is introduced inside the face panel 1 maintaining gross pressure of 3×10
-5 Torr vacuum, and a sputtering work is carried out for about 15min using aluminum as a target metal to form an about 1,200Å thick light reflecting aluminum metal film 7. Following these works, 5vol% of nitrogen gas relative to argon gas is introduced inside the panel 1 and the sputtering work is carried out for about 5min to form an about 1,200Å thick black-colored heat absorbing film 8. With the above method, productivity of the face panel is improved.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过溅射技术在彩色接收管的面板内部形成光反射金属膜，然后在面板管内引入极少量的氮气，从而提高面板的生产效率。构成：通过具有油扩散泵的真空泵系统将形成有荧光层2和膜层6的面板1内的空气排出至多达2×10 -5 Torr真空。然后，在保持总压3×10 -5 Torr真空的面板1内部引入氩气，使用铝作为目标金属进行溅射工作约15分钟，形成约1200厚的反光铝金属根据这些工作，将5体积％的氮气相对于氩气引入到面板1内，并且进行溅射工作约5分钟以形成约1200埃厚的黑色吸热膜8.利用上述方法，改善了面板的生产率。

7. 发明专利

JPS6184089A High heat conductive circuit board 失效
标题翻译：高导热电路板
公开(公告)号：JPS6184089A
公开(公告)日：1986-04-28
申请号：JP20410184
申请日：1984-10-01
申请人： Toshiba Corp
发明人： IWASE NOBUO , ANZAI KAZUO , SHINOZAKI KAZUO , SATO NOBORU
IPC分类号： H05K1/09 , C04B41/88 , H05K1/03 , H05K3/12

8. 发明专利

JPS60195837A Manufacture of face panel 失效
标题翻译：面板制造
公开(公告)号：JPS60195837A
公开(公告)日：1985-10-04
申请号：JP4926184
申请日：1984-03-16
申请人： Toshiba Corp
发明人： ANZAI KAZUO , SHINOZAKI KAZUO , KATOU ATSUSHI
IPC分类号： H01J9/22 , H01J29/28
CPC分类号： H01J29/28
摘要： PURPOSE:To heighten the productivity of face panels by a method, in which a phosphor layer and a film layer are formed on the inside of the face panel followed by maintaining the face panel inside in a gas atmosphere of a specific vacuum degree and performing sputtering for simultaneously fomring a luminous reflective metal film and a thermoabsorbing material film on the film layer. CONSTITUTION:Sputtering maintains the inside of a face panel 1 in a gas atmosphere of a vacuum degree 10 -10 Torr while being performed with a luminous reflective metal as a target. Generally, a mixture gas of rare gas such as helium, neon, argon, krypton and xenon and a nitric compound such as nitorgen, ammonia and dicyan or a compound separating and generating nitrogen under said sputtering atmosphere is used as the atmosphere gas. The kind of the atmospheric gas is properly selected according to a sputtering condition, however, desirably a mixture gas of nitrogen gas and rare gas, which are cheap and easy to handle, is used while more desirably mixture gas consisting of 3-10vol% of nitrogen and 90-97vol% of rare gas is used. Sputtering is desirably performed until the sputtering film thickness reaches 500-5,000Angstrom .
摘要翻译：目的：通过以下方法提高面板的生产率：其中在面板内侧形成荧光体层和膜层，然后将面板保持在特定真空度的气体气氛中并进行溅射用于同时在膜层上产生发光反射金属膜和热吸收材料膜。构成：溅射在以发光反射金属为目标的情况下，在真空度10 -4 -10 -2乇的气体气氛中维持面板1的内部。通常，使用诸如氦，氖，氩，氪和氙的稀有气体和硝基化合物如硝基，氨和二氰的混合气体或在所述溅射气氛下分离和产生氮的化合物作为气氛气体。根据溅射条件适当地选择气氛气体的种类，然而，优选使用便宜且易于处理的氮气和稀有气体的混合气体，更优选由3-10体积％使用氮气和90-97vol％的稀有气体。期望进行溅射，直到溅射膜厚度达到500-5,000埃。

9. 发明专利

JPS59152404A Infrared optical transmission line and its manufacture 失效
标题翻译：红外光传输线及其制造
公开(公告)号：JPS59152404A
公开(公告)日：1984-08-31
申请号：JP2624383
申请日：1983-02-21
申请人： Toshiba Corp
发明人： ANZAI KAZUO , IMAGAWA HIROSHI , KASORI MITSUO , TAKANO TAKESHI
IPC分类号： G02B1/02 , G02B6/00
摘要： PURPOSE:To obtain an infrared optical transmission line low in danger of heating by vapor depositing a metal to the inside wall of the coating tube of said line and halogenating said metal. CONSTITUTION:In the method for manufacturing an IR optical transmission line provided with an IR optical transmission body and a coating tube, a metal is vapor deposited to the inside wall of the coating tube and halogenated to obtain an IR optical transmission line provided with a metallic halide film having IR transmittance and lower in refractive index than said body. As said body, metallic halides, such as CsI, CsBr, CsCl, RbI, RbBr, RbCl, KI, KBr, KCl, AgCl, AgBr, TlI, TlBr, TlCl, and a combination of >=2 of them, etc. are exemplified. Since thickness of said metallic halide, if
摘要翻译：目的：通过将金属气相沉积到所述管线的涂覆管的内壁并卤化所述金属来获得低加热危险的红外光传输线。构成：在设置有IR光传输体和涂布管的IR光传输线的制造方法中，将金属蒸镀在涂布管的内壁上并进行卤化，得到具有金属的IR光传输线具有IR透射率和折射率低于所述主体的卤化物膜。如所述体，金属卤化物如CsI，CsBr，CsCl，RbI，RbBr，RbCl，KI，KBr，KCl，AgCl，AgBr，TlI，TlBr，TlCl和它们的组合≥2的金属卤化物等例证。由于所述金属卤化物的厚度如果<10μm，则准备不均匀，如果<100μm，则会导致膜上的裂纹，其优选的厚度为10-100μm。

10. 发明专利

JPH07202109A SEMICONDUCTOR PACKAGE 失效
公开(公告)号：JPH07202109A
公开(公告)日：1995-08-04
申请号：JP33531493
申请日：1993-12-28
申请人： TOSHIBA CORP
发明人： ANZAI KAZUO , FUKUZAWA YUJI , ENDO MITSUYOSHI , TEJIMA KOICHI
IPC分类号： H01L23/50
摘要： PURPOSE:To provide a semiconductor package using a ceramic substrate, which enables reliability of a sealed part to be enhanced, by suppressing resistance of a lead frame and frequency dependent inductance. CONSTITUTION:To the ceramic chip-mounted side of a ceramic substrate 1 on which a semiconductor chip 2 is mounted, a Cu lead frame 5 having an oxide layer of high Cr and Zr concentrations particularly on the surface by way of, for example, a glass 7 sealant 4 arranged in a row is bonded. The Cu lead frame 5 and the semiconductor chip are electrically connected by a bonding wire 6 and the like. To the ceramic substrate 1, a ceramic cap 8 is bonded by way of, for example, the glass sealant 8 likewise arranged in a row through the Cu type lead frame 5.

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